Process for preparing nano structure of zinc oxide

A zinc oxide nano- and nano-structure technology, applied in nano-structure manufacturing, zinc oxide/zinc hydroxide, nanotechnology, etc., can solve problems such as unrealized position and number controllable

Active Publication Date: 2008-07-09
SUN YAT SEN UNIV
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

At present, the thermal solution growth method has not yet achieved ZnO nanostructures or t

Method used

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  • Process for preparing nano structure of zinc oxide
  • Process for preparing nano structure of zinc oxide
  • Process for preparing nano structure of zinc oxide

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Embodiment Construction

[0019] The present invention will be described in further detail below in conjunction with the accompanying drawings and a specific embodiment.

[0020] 1. Use n-type high-conductivity single crystal silicon with crystal orientation (resistivity 2.4~3.7×10 -3 Ω·cm)11 as the substrate.

[0021] 2. As shown in Figure 1(a), a 50nm-thick metal zinc (Zn)12 thin film was deposited on a single crystal silicon wafer using a SP-3 magnetron sputtering station. The film preparation conditions are as follows: background vacuum: 3.0×10 -3 Pa; process gas: high-purity argon (Ar) gas (flow rate: 60 sccm); sputtering power: DC sputtering 300W; time: 2 minutes; working temperature: room temperature.

[0022] 3. Use a KW-4AH type hot plate to bake the silicon substrate coated with the metal zinc film at a temperature of 180°C before gluing for 30 minutes.

[0023] 4. Utilize the Karl Suss RC8 glue coating machine, evenly spin-coat the PMMA (950K C4) 13 (Fig. The glue rotation speed is 3000...

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Abstract

The invention discloses a process for preparing zinc oxide nanometer structure, which is characterized in that the process steps are as follows: (A) coating a layer of light-sensitive emulsion on the underlay which is deposited with a layer of seed and then forming a microhole on the light-sensitive emulsion by photolithograpic technology, (B) placing the underlay which is obtained by step A in the growth solution and proceeding the growth of the nanometer structure. The employment of the process can successfully realize the preparation of various zinc oxide nanometer structures. Compared with the prior art, the technique method has the advantages that the process step is simple and controlled, the position of the prepared zinc oxide nanometer structure is controllable, the vertical occurrence is orderly and the appearance is uniform, which is much beneficial for preparing element.

Description

technical field [0001] The invention relates to the technical field of design and manufacture of nanometer materials, in particular to a method for preparing zinc oxide nanostructures. Background technique [0002] As a wide-bandgap (3.37eV) semiconductor with high exciton binding energy (60meV), ZnO nanostructures have broad application prospects in nanoelectronic devices, ultraviolet photovoltaic devices, and nanosensors. The controllable preparation of ZnO nanostructures or arrays thereof is of great significance for device applications, such as gate-all-around field-effect transistors, photonic crystals, and field emission electron sources. The controllable preparation of ZnO nanostructures includes controllable position, controllable number and controllable shape. Generally, there are two main methods for preparing ZnO nanostructures: one is the catalyst-assisted vapor-liquid-solid (VLS) method; the other is the hydrothermal growth method. [0003] When the gas-phase ...

Claims

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Application Information

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IPC IPC(8): C01G9/02B82B3/00
Inventor 许宁生佘峻聪何浩刘俊邓少芝陈军
Owner SUN YAT SEN UNIV
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