This invention discloses a
hydrogen sensing thin film and a
room temperature sensor, belonging to the field of
semiconductor gas-sensitive materials and sensor technology. The
hydrogen sensing thin film is composed of
tungsten oxide (WO3) and highly dispersed Pt-Pd-Ni-Co-Cu-Fe
hexa-element high-entropy nano-
alloy particles. The sensor includes a SiO2 /
Si substrate, interdigitated electrodes disposed on the substrate, and a sensitive thin film covering the surfaces of the electrodes and the substrate. The fabrication method of this invention employs a three-target synergistic magnetron
sputtering process, utilizing a high-power pulsed magnetron
sputtering (HiPIMS) power supply to drive a pure W target and a strongly magnetic Fe-Co-Ni
alloy target respectively, while simultaneously using a DC power supply to drive a non-magnetic Pt-Pd-Cu
alloy target. By effectively controlling the
oxygen content within the thin film through
oxygen flow
rate regulation and
reactive magnetron sputtering, and based on the
phase formation process driven by differences in oxyphilic behavior and high mixing entropy, the phase type and size distribution within the film are controlled to form a controllable
tungsten oxide + nano-high-entropy alloy dual-phase structure. Furthermore, a gradient
coupling interface with
oxygen-rich vacancies and strong
metal-support interactions is constructed between the two phases, significantly reducing the potential barrier for
hydrogen atom spillover. This hydrogen sensing thin film achieves high sensitivity operation at
room temperature, shortened
response time, and exhibits excellent resistance to
CO poisoning and long-term
cycling stability.