748 results about "Conducting channel" patented technology

Methods and apparatuses prevent overtunneling in pFET-based nonvolatile floating gate memory (NVM) cells. During a tunneling process, in which charge carriers are removed from a floating gate of a pFET-based NVM cell, a channel current of a memory cell transistor is monitored and compared to a predetermined minimum channel current required to maintain a conducting channel in an injection transistor of the memory cell. When the monitored channel current drops below the predetermined minimum channel current, charge carriers are injected onto the floating gate by impact-ionized hot-electron injection (IHEI) so that overtunneling is avoided.

The invention discloses a multi-conducting-channel synchronous electrocardio signal processing method and an apparatus. The method comprises the following steps: A1, collecting electrocardio signals of each conducting channel respectively and obtaining electrocardio signal data of each conducting channel; B1, calculating a quality judgment guideline of each conducting channel according to the electrocardio signal data; C1, performing optimized conducting channel selection according to the quality judgment guideline; D1, performing QRS wave identification and specification to each single conducting channel or at least to the optimized conducting channel according to the electrocardio signal data; E1, performing a combination judgment to the QRS wave identification and specification result of the optimized conducting channel to form a combination detection result. The invention realizes the tracing of dynamic variation of the quality of signals in a comparatively complicated clinical application environment and the effective extraction of electrocardio signals through dynamic switching of the optimized conducting channels, and finally a reliable analyzing information of the rhythm of heart of a patient can be obtained.

The invention is direction and position drill-following survey apparatus comprising a drill collar, two V slots, metal shielding layer, tow gamma sensor, three-axis acceleration sensor, signal processing circuit module, high pressure sealing cover board, boring liquor conducting channel, upper slip ring connector, lower slip ring connector, wire hole. The invention integrated gamma survey and directional survey in just a short section which enables the drill not only survey the rock properties real-timely, but also tell the upper and lower rock characteristics when boring well., so to effectively find out the upper cover layer of the storage layer and seize the best timing entering the oil storage layer. Moreover, meanwhile assorting the upper and lower rock properties, the direction and drill status also can be obtained without any delay, which, facilitating adjusting the well boring track according to the geographic data and manage the drill travels a best track underground among the oil storage. The invention is suitable for geological guiding in fossil engineering.

The present invention is a biosensor apparatus that includes a substrate, a source on one side of the substrate, a drain spaced from the source, a conducting channel between the source and the drain, an insulator region, and receptors on a gate region for receiving target material. The receptors are contacted for changing current flow between the source and the drain. The source and the drain are relatively wide compared to length between the source and the drain through the conducting channel.

A case accommodates two circuit components to be overlapped one above the other and mutually in an approximately parallel form. The terminals of the upper electric power conducting channel are fitted into the terminals of the lower electric power conducting channel one above the other so that they can be connected. The case is provided with a positioning part which regulates deflection of both the terminals above and below toward the vertical direction intersecting with the direction that the terminal is fitted into the terminal, thus making it possible to give positioning to a plurality of the terminals all together and also making it possible to connect the terminals and the terminals respectively to their counterparts without fail. Further, the positioning part is provided on the case for accommodating the circuit components, which eliminates the necessity for a special positioning member.

The invention is applicable to the field of novel materials, and provides a silicon carbon composite negative electrode material for a lithium ion battery, as well as a preparation method and applications of the material. The negative electrode material is of a nuclear-shell-type composite structure, and consists of nano silicon in the core, amorphous carbon at the middle layer and a one-dimensional nano carbon material at the outermost layer, wherein the amorphous carbon at the middle layer forms an elastic loose surface structure, and thus the circulating performance and multiplying performance of silicon are improved; a network structure built by the one-dimensional nano carbon material at the outermost layer not only plays a role in buffering mechanical stress, but also provides a rapid electric conducting channel for active silicon particles, and improves the circulating performance and multiplying performance of silicon further; and meanwhile, a three-dimensional electric-conducting heat-conducting network formed by the one-dimensional nano carbon material can conduct heat generated by a battery during the discharging process to the space around, and the safety performance of the battery is improved. The preparation method of the silicon carbon composite negative electrode material for the lithium ion battery is simple and feasible in process, environment-friendly and energy-saving, low in cost, and easy for industrialization.

A method for contacting patterned electrode devices includes the steps of providing a porous substrate, depositing electrically conductive material to form at least one electrode on a front-side of the porous substrate and depositing at least one electrically conductive back-side contact trace on the back-side of the substrate. A portion of the electrically conductive material penetrates into the substrate. A device is formed including the electrode on the front side of the substrate, wherein the electrode is electrically coupled by a conducting channel including the electrically conductive material through the substrate to the back-side contact trace.

This invention discloses a semiconductor power device disposed in a semiconductor substrate and the semiconductor substrate has a plurality of trenches. Each of the trenches is filled with a plurality of epitaxial layers of alternating conductivity types constituting nano tubes functioning as conducting channels stacked as layers extending along a sidewall direction with a “Gap Filler” layer filling a merging-gap between the nano tubes disposed substantially at a center of each of the trenches. The “Gap Filler” layer can be very lightly doped Silicon or grown and deposited dielectric layer. In an exemplary embodiment, the plurality of trenches are separated by pillar columns each having a width approximately half to one-third of a width of the trenches.

The invention discloses a channel state information (CSI) processing method, a CSI processing device and a CSI processing system, wherein the CSI processing method includes the steps of configurating configuration signals for CSI-RS port subsets by a network side, and notifying user equipment (UE) of reference signals and the configuration signals; conducting channel measurement by the UE according to the reference signals, determining CSI according to results of the channel measurement; and reporting the CSI of every CSI-RS port subsets according to the configuration signals which are configurated by the network side on the CSI-RS port subsets. According to the CSI processing method, the CSI processing device and the CSI processing system, part of CSI-RS port subsets can utilize reciprocity of channels to determine PMI and RI, no PMI or RI need to be fed back, and only CQI needs to be fed back. Therefore, a communication system reduces CSI reporting expenses on the premise of guaranteeing service performance. According to the technical scheme, the CSI processing method, the CSI processing device and the CSI processing system are particularly suitable for a TDD system.

The invention discloses a high-heat-conductivity flexible silica gel gasket and a preparation method thereof. The high-heat-conductivity flexible silica gel gasket is prepared from the following raw materials by weight: 600 to 1,000 parts of modified spherical aluminum oxide powder, 60 to 100 parts of vinyl silicone oil, 30 to 50 parts of dimethyl silicone oil, 1.5 to 4 parts of hydrogen-containing silicone oil and 0.2 to 0.8 part of catalyst. The preparation method comprises the following steps: (1) modifying aluminum oxide particles, (2) stirring; (3) vacuumizing, (4) vulcanizing, and the like. The high-heat-conductivity flexible silica gel gasket increases the heat-conducting channels in the silica gel gasket by modifying the spherical aluminum oxide powder, selecting the raw materials and controlling the using amount of the raw materials so as to improve the flexibility and the heat-conducting property of the silica gel gasket. The high-heat-conductivity flexible silica gel gasket has high flexibility, and the heat-conducting coefficient is increased by more than 4.2 W.

The invention discloses a wireless network node neutral access dynamic configuration method. The method comprises the following steps of conducting network synchronization of master and slave nodes, conducting preprocessing, reserving the application and reply, dynamically completing time slots, and conducting channel renewing and multiplexing based on priority decisions, and conducting data transmission. According to the wireless network node neutral access dynamic configuration method, the time slot utilization rate is high, the topology adaptation is good, the control overhead is small, the network opening time is short, and the network restructuring ability is strong.

Provided is an anode particulate, having a dimension from 10 nm to 100 μm, for use in an alkali metal battery, the particulate comprising (i) an anode active material capable of reversibly absorbing and desorbing lithium ions or sodium ions, (ii) an electron-conducting material, and (iii) a lithium ion-conducting or sodium ion-conducting electrolyte, wherein the electron-conducting material forms a three dimensional network of electron-conducting pathways in electronic contact with the anode active material and the electrolyte forms a three dimensional network of lithium ion- or sodium ion-conducting channels in ionic contact with the anode active material. The particulate can be of any shape, but preferably spherical or ellipsoidal in shape. Also provided is a cathode in a particulate form containing a cathode active material, an electron-conducting material forming a three dimensional network of electron-conducting pathways, and a lithium ion-conducting or sodium ion-conducting electrolyte forming a three dimensional network of ion-conducting channels.

The invention discloses a method, user equipment and a base station for transmission and control information. The method includes obtaining resources which are occupied by a first user class identifier (UCI), and obtaining resources which are occupied by a second UCI; conducting channel coding on the first UCI to obtain a coding bit sequence of the first UCI, and conducting channel coding on the second UCI to obtain a coding bit sequence of the second UCI; mapping the coding bit sequence of the first UCI and the coding bit sequence of the second UCI on a physical up channel so as to facilitate transmitting to the base station. The first UCI and the second UCI are independently coded, and corresponding resources of the first UCI and the second UCI are allocated according to performance objectives of different UCIs to ensure respective performance objective requirement of the different UCIs, simultaneously avoid improving transmitting power according to the highest UCI in performance requirement, and improve utilization efficiency of power.

The invention is suitable for the communication technology field, and provides a method of obtaining channel responses of self-interference channels, and a full duplexing communication machine. The method comprises the steps of adopting multiple reference signals to conduct channel estimation for self-interference channels and obtaining channel response estimation values of the self-interference channels, wherein the time interval of each two adjacent reference signals is shorter than the coherent time of the self-interference channels and the frequency domain interval of each two adjacent reference signals is shorter than the coherent bandwidth of the self-interference channels; determining stable intervals of channel frequency domain responses based on the channel response estimation values; randomly selecting frequency points within the stable interval of each channel frequency domain response or selecting frequency points with higher channel responses to make the frequency points serve as emission frequency points of the reference signals; and obtaining a relation between emission frequency points and non-emission frequency points of the channel responses and then obtaining channel responses of all time domains and frequency domain directions based on reception signals, corresponding to the reference signals, on the emission frequency points. According to the invention, reference signal resources used for self-interference channel estimation are saved.

The present invention is a power semiconductor switch having a monolithically integrated low-voltage lateral junction field effect transistor (LJFET) controlling a high-voltage vertical junction field effect transistor (VJFET). The low-voltage LJFET conducting channel is double-gated by p+n junctions at opposite sides of the lateral channel. A buried p-type epitaxial layer forms one of the two p+n junction gates. A p+ region created by ion implantation serves as the p+ region for the second p+n junction gate. Both gates are electrically connected by a p+ tub implantation. The vertical channel of the vertical JFET is formed by converting part of the buried p-type epitaxial layer into n+ channel via n-type ion implantation.

The invention discloses a heat-conducting and insulated composite material based on carbon nanotubes and a preparation method for the composite material. The composite material comprises the following components in parts by weight: 100 parts of a thermoplastic polymer, 10-70 parts of heat-conducting inorganic fillers, 1-7 parts of the carbon nanotubes, an antioxidant and a processing aid. The ratio of the inorganic fillers to the carbon nanotubes is determined and the carbon nanotubes with relatively large length-diameter ratios are connected with a plurality of isolated heat-conducting inorganic filler granules in the polymer, so that the carbon nanotubes and the inorganic filler granules form a three-dimensional network heat-conducting channel in the polymer; at the same time, the plurality of carbon nanotubes can be adsorbed on the same heat-conducting inorganic filler granule without contact, so that the composite material has relatively good mechanical property, heat-conducting property and insulation property.

The invention belongs to the technical field of target track generation, particularly relates to an outer transmitter-based radar target track processing method based on clustering. The outer transmitter-based radar target track processing method based on clustering includes the steps of firstly, receiving the signal of each transmitter through a receiving antenna, and conducting channel balancing and down-conversion on the signal of each transmitter to obtain original data; secondly, sequentially conducting clutter cancellation, distance-Doppler operation, constant false alarm rate detection and amplitude comparison angle measurement on the original data so as to obtain front end processed data; thirdly, generating the tracks of all targets through a clustering method according to the front end processed data.

A damper device is manufactured from a single integrated body. The damper device comprises a damping chamber portion, a valve housing portion with adjustable valve devices and a pressurization reservoir portion. The internal volume of the damping chamber portion is divided by a piston into a compression chamber and a return chamber and the internal volume of the pressurization reservoir portion is divided by a member that is acted upon by a pressure that pressurizes the damping medium in the device. The three different portions are arranged substantially parallel to one another and the internal volume of the valve housing is connected both to the pressurized interior of the pressurization reservoir and to both chambers of the damping chamber part so that the damper always functions with a positive pressure in both the compression and the return chamber. The body is extruded as a single workpiece with alternating heat-conducting channels and fins on its outer surface.

An implant may be used for implantation into tissue of a body. The implant includes an elongated conduit and a loop. The elongated conduit has an interior passageway for conducting fluid. The loop has an interior circumference with a fluid conducting channel formed therein. The channel is interconnected with the interior passageway for delivery of fluid between the channel and the interior passageway.

A method for contacting patterned electrode devices includes the steps of providing a porous substrate, depositing electrically conductive material to form at least one electrode on a front-side of the porous substrate and depositing at least one electrically conductive back-side contact trace on the back-side of the substrate. A portion of the electrically conductive material penetrates into the substrate. A device is formed including the electrode on the front side of the substrate, wherein the electrode is electrically coupled by a conducting channel including the electrically conductive material through the substrate to the back-side contact trace.

An apparatus and related method are useful for compensating the pressure of drilling fluid in a drill collar disposed in a borehole. The apparatus includes a stator adapted for being secured within the drill collar against rotation relative to the drill collar, and a shaft rotatably carried within the stator so as to define a fluid-conducting annular gap between the shaft and the stator. The shaft has a fluid-conducting channel extending axially therethrough. A rotor is secured about the shaft for rotation therewith. A portion of the rotor is disposed adjacent a portion of the stator so as to define an inlet between the rotor and stator portions through which drilling fluid in the drill collar will be conducted. The rotor portion further cooperates with the stator and the shaft to define a first annular cavity that fluidly communicates with the gap and the inlet. A rotary seal is disposed in the first cavity for isolating the gap from the inlet. Either the rotor, the shaft, or a combination thereof, are equipped with a first compensating chamber for holding a compensating fluid. The first compensating chamber fluidly communicates with the gap. A movable barrier is disposed in the first compensating chamber for isolating the compensating fluid. At least one port extends through the rotor for communicating drilling fluid pressure to the compensating fluid via the movable barrier.

To accommodate high power densities associated with high-performance integrated circuits, an integrated circuit (IC) package includes a heat-dissipating structure in which heat is dissipated from a surface of one or more dice to a heat spreader. The heat spreader has a fluid-conducting channel formed therein, and a fluid coolant may be circulated through the channel via a micropump. In an embodiment, the channel is located at or near a surface of the heat spreader, and a heat-generating IC is in thermal contact with the heat spreader. In an embodiment, the IC is a thinned die that is coupled to the heat spreader via a thinned thermal interface material. Methods of fabrication, as well as application of the package to an electronic assembly and to an electronic system, are also described.

The invention belongs to the technical field of ferroelectric memory, in particular to a non-destructive readout ferroelectric memory and a manufacturing method and an operating method thereof. The non-destructive readout ferroelectric memory comprises a first electrode layer, a second electrode layer and a ferroelectric film layer, wherein the ferroelectric film layer is arranged between the first electrode layer and the second electrode layer; a gap for partitioning the first electrode layer into at least two parts is formed in the first electrode layer; the polarization direction of the electric domain of the ferroelectric film layer is not basically vertical or basically parallel to the normal direction of the first electrode layer; when a read signal in a certain direction is biased between two adjacent parts between which the gap is kept in the first electrode layer, the electric domain of the part of ferroelectric film layer corresponding to the gap is reversed locally to construct a domain wall conducting channel. By adopting the ferroelectric memory, a non-destructive current readout way can be realized. The non-destructive readout ferroelectric memory is suitable for high-density application, is easy to manufacture, and is low in cost.

The invention provides a preparation method of a polyimide film. The preparation method comprises the following steps of mixing and grinding a heat-conducting padding, a solvent and a coupling agent to obtain slurry; enabling diamine and dianhydride to react in a solvent, so as to obtain polyimide resin; mixing, defoaming and casting the slurry and the polyimide resin to obtain a polyamic acid film; conducting imidization on the polyamic acid film to obtain the polyimide film, wherein the heat-conducting padding includes a first heat-conducting padding of which the particle size is 100-200nm, a second heat-conducting padding of which the particle size is 50-100nm and a third heat-conducting padding of which the particle size is 10-50nm. The heat-conducting padding adopted by the polyimide film is different in particle size, so that the maximal packing degree is formed between the heat-conducting padding; an effective heat-conducting channel is formed; the heat-conducting property of the polyimide film is improved; the heat-conducting padding can be evenly dispersed in the solvent in a grinding manner; the prepared polyimide film is even to disperse, high in stability, and good in mechanical property in the presence of the coupling agent.

Described are a method and system for dispensing a fluid. A fluid-dispensing device includes a substrate and a plurality of nozzles formed in the substrate. Each nozzle has an open-ended tip and a fluid-conducting channel between the tip and a source of fluid. A non-conducting spacer is on the substrate and electrically isolates a gate electrode from the substrate. The gate electrode is located adjacent to the tip of at least one of the nozzles to effect dispensing of the fluid in that nozzle in response to a voltage applied between the gate electrode and the nozzle or fluid in the nozzle. In one embodiment, the gate electrode includes a plurality of individually addressable gate electrodes used for selectively actuating nozzles.

The invention discloses a 3D SOI CMOS integrated device and a manufacturing method thereof, relates to the technical field of microelectronics, and mainly solves the problem of low speed of the existing 3D integrated circuits. The proposal is that an SSOI substrate and an SSGOI substrate are employed to construct two active layers of a new 3D CMOS integrated device; wherein, the lower active layer is the SSOI substrate and is made into a strained Si nMOSFET device by utilizing the characteristic of high electron mobility of a strained Si material in the SSOI substrate; the upper active layer is the SSGOI substrate and is made into a strained SiGe surface channel pMOSFET device by utilizing the characteristic of high hole mobility of the strained Si material in the SSGOI substrate; the upper active layer and the lower active layer form a 3D active layer structure by a bonding process, and are connected by an interconnection line to form the 3D CMOS integrated device with a conducting channel of 65nm to 130nm. Compared with the existing 3D integrated devices, the 3D SOI CMOS integrated device manufactured by the manufacturing method has the advantages of high speed and good performance, and can be applied to manufacturing large-scale and high-speed 3D CMOS integrated circuits.

The invention relates to a digital loudspeaker drive method and a device based on quaternary code dynamic mismatch reshaping. The method comprises the steps of (1) conducting input format conversion, (2) conducting multi-bit sigma to delta modulation, (3) conducting thermometer code conversion, (4) conducting dynamic mismatch reshaping processing, (5) conducting channel data combination and mapping coding, (6) controlling metal-oxide-semiconductor field effect transistor (MOSFET) pipe of a full-bridge power amplifier network to conduct opening and closing status switching, and driving a digitalized loudspeaker load to produce sound. The device comprises a sound source (1), a digital format converter (2), a multi-bit sigma to delta modulator (3), a thermometer coder (4), a dynamic mismatch reshaper (5), a channel data combiner (6), a mapping coder (7), a multi-channel digital amplifier (8) and the digitalized loudspeaker load (9). The units are sequentially connected in order. According to the digital loudspeaker drive method and the device based on quaternary code dynamic mismatch reshaping, use efficiency of an amplifier pipe and the load is improved, development periods and hardware implementation cost are saved, and good immunity is provided for frequency response deviation of digital channels.