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K hole doped polycrystalline SnSe and preparation method therefor

A hole and vacuum technology, which is applied in the manufacture/processing of thermoelectric devices, as well as in the direction of thermoelectric device junction lead wire materials, etc., to achieve the effect of strong practicability, improved electrical performance, and increased carrier concentration

Active Publication Date: 2016-09-28
深圳热电新能源科技有限公司
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Problems solved by technology

Finally, when the Ag doping amount is 1%, the maximum ZT value is 0.65 (750K) (Chen et al. J. Mater. Chem. A 2 (2014) 11171), it is pointed out in the text, and the thermal conductivity at room temperature is about 1.0W / mK, higher than the value of single crystal, the existence of the second phase limits the further performance improvement

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  • K hole doped polycrystalline SnSe and preparation method therefor
  • K hole doped polycrystalline SnSe and preparation method therefor
  • K hole doped polycrystalline SnSe and preparation method therefor

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Embodiment 1-11

[0047] First, use an improved mechanical alloying method to prepare SnSe-based precursor fine powders. This method is to use high-purity Sn, K and Se elemental powders (purity greater than 99.999%) according to the molar percentage of Sn elemental Se elemental substance is 90% ~ 100% and does not contain 100%, the molar percentage of K elemental substance in Se elemental substance is 0% to 10% and does not contain 0%, and it is ensured that the total mass of Sn elemental substance and K elemental substance is equal to the molar fraction of Se elemental substance, in the presence of N 2 Weigh it in the glove box under the atmosphere and put it into a ball mill jar, put it into a planetary high-energy ball mill, and feed it with N 2 Mixed gas with Ar, sealed, mechanically alloyed, and dry ball milled to obtain K-doped SnSe-based fine powder, and then sintered K-doped SnSe-based powder by spark plasma sintering (SPS) to prepare a block Material K is hole-doped polycrystalline SnS...

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Abstract

The invention relates to a K hole doped polycrystalline SnSe and a preparation method therefor, and belongs to the technical field of energy materials. The method comprises the steps: firstly taking high-purity Sn, K and Sn elementary substances as raw materials, and enabling the raw materials to be prepared into compound powder through an improved mechanical alloying method; secondly employing a spark plasma sintering method, and adjusting the mechanical alloying method and the technological parameters of the spark plasma sintering, thereby achieving the effective doping of K elements, and obtaining K hole doped polycrystalline SnSe through preparation, wherein the atomic ratio of Sn: K: Se is equal to (1-x): x: 1, and x is greater than zero but not greater than 0.1. The K hole doped polycrystalline SnSe is low in heat conductivity, and is high in carrier concentration, power factor and ZT value, wherein the heat conductivity can decrease to 0.20W / mK at the temperature of 773K, and the maximum power factor and the maximum thermoelectricity optimum value ZT respectively reach 350 [mu]W / mK2 and 1.08. The method optimizes the thermoelectric performances, is simple and convenient in technology, is low in cost, and is high in practicality.

Description

technical field [0001] The invention belongs to the technical field of energy materials, and relates to a hole-doped polycrystalline SnSe and a preparation method thereof, in particular to a K hole-doped polycrystalline SnSe and a preparation method thereof. Background technique [0002] In March 2014, the Kanatzidis research group at Northwestern University reported for the first time on Nautre that the SnSe single crystal with a layered structure achieved the highest ZT value along the b-axis direction due to its ultra-low thermal conductivity at 923K. 2.62, (Zhao et al. Nature, 508(2014), 373), is the highest value of the current bulk thermoelectric material system, which has attracted the attention of researchers at home and abroad. Compared with PbTe, a typical medium-temperature thermoelectric material that is deeply researched and put into practical application, SnSe not only has excellent thermoelectric properties, but its element composition Sn / Se is also cheaper an...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 何佳清陈跃星葛振华尹美杰冯丹
Owner 深圳热电新能源科技有限公司
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