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Zinc orthotitanate single crystal film and preparation method thereof

A zinc orthotitanate, single crystal thin film technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of rare research reports on the preparation of single crystal thin film materials, unsuitable for epitaxial growth of single crystal thin films, crystallization Poor quality and other problems, to achieve the effects of stable and controllable electrical properties, complete lattice structure, and fewer lattice defects

Active Publication Date: 2021-06-11
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] (1) Most of the zinc orthotitanate materials currently prepared are in the form of powder, polycrystalline film and nanostructure, and the crystal quality of the prepared materials is poor and there are many defects
Zn has not been seen so far 2 TiO 4 Report on Bulk Single Crystal Materials
[0005] (2) Most of the research on zinc orthotitanate focuses on the improvement of the photocatalytic performance and luminescence performance of the material, and the research reports involving the preparation of single crystal thin film materials are rare
The sol-gel method can prepare a gel film by dipping or spin coating, and then dry and sinter to form an inorganic film. The film is characterized in that the formed film is amorphous or polycrystalline, with loose texture and many defects; The irradiation method can prepare films with amorphous or polycrystalline structures, but it is not suitable for epitaxial growth of single crystal films

Method used

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  • Zinc orthotitanate single crystal film and preparation method thereof
  • Zinc orthotitanate single crystal film and preparation method thereof
  • Zinc orthotitanate single crystal film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] With a single wafer of magnesium aluminate as the substrate, Zn(C) with a purity of 99.9999% 2 h 5 ) 2 and Ti[N(CH 3 ) 2 ] 4 As an organometallic source, ultra-high-purity nitrogen is used as the carrier gas, and high-purity oxygen is used as the oxidizing gas. The zinc titanate thin film material is prepared by MOCVD technology and heat-treated at a temperature of 950 ° C.

[0067] Proceed as follows:

[0068] (1) Pump the MOCVD reaction chamber into a high vacuum state, and the vacuum degree is 2×10 -4 Pa, the magnesium aluminate substrate is placed in the reaction chamber and heated to a temperature of 550°C;

[0069] (2) Open the valve of the nitrogen cylinder and feed the background N into the reaction chamber. 2 , background N 2 The flow rate is 120sccm, the pressure of the reaction chamber is 30Torr, and it is kept for 25 minutes;

[0070] (3) Open the valve of the oxygen cylinder, the oxygen flow rate is 50 sccm, keep for 10 minutes;

[0071] (4) Open ...

Embodiment 2

[0082] MgAl 2 o 4 (100) is the substrate, and the zinc titanate thin film material is prepared by MOCVD technology and heat-treated. The film preparation process is the same as in Example 1, except that the heat treatment temperature is 1000° C. and the time is 30 minutes. Prepared Zn 2 TiO 4 The film has a single epitaxial orientation of (400) crystal plane, but compared with Example 1, Zn 2 TiO 4 The intensity of the diffraction peak of the (400) crystal plane decreased obviously, and the half-maximum width increased, which indicated that the crystalline quality of the thin film of the sample annealed at 1000°C decreased.

Embodiment 3

[0084] MgAl 2 o 4 (100) is the substrate, and the zinc titanate thin film material is prepared by MOCVD technology and heat-treated. The film preparation process is the same as in Example 1, except that the heat treatment temperature is 900° C. and the time is 30 minutes. Prepared Zn 2 TiO 4 The film has a single epitaxial orientation of (400) crystal plane, but compared with Example 1 and Example 2, Zn 2 TiO 4 The intensity of the (400) crystal plane diffraction peak is obviously weaker, indicating that the crystallization quality of the thin film decreases in the sample annealed at 900 °C.

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Abstract

The invention relates to a zinc orthotitanate single crystal film and a preparation method thereof. Diethylzinc and tetra(dimethylamino) titanium serve as metal organic compound source materials, oxygen serves as oxidizing gas, a zinc titanate film grows on a magnesium aluminate crystal face substrate under the vacuum condition through metal organic chemical vapor deposition equipment, and the prepared film is annealed in air to obtain the zinc orthotitanate single crystal film of a cubic structure. The prepared zinc orthotitanate single crystal thin film material is regular in lattice arrangement, complete in structure, free of twin crystal, high in stability, good in adhesion performance and wide in application prospect in the field of semiconductor photoelectric devices.

Description

technical field [0001] The invention relates to a zinc orthotitanate single crystal thin film and a preparation method thereof, belonging to the technical field of wide bandgap oxide semiconductor materials. Background technique [0002] Zinc orthotitanate is a functional material with a wide range of uses. Cubic zinc orthotitanate (Zn 2 TiO 4 ) is a wide bandgap semiconductor material with a bandgap width of about 3.29eV at room temperature. It has the advantages of high transmittance in the visible light region and stable physical and chemical properties. Zn 2 TiO 4 The material has good photoelectric properties and has potential applications in the fields of luminescence, photocatalysis, dye-sensitized solar cells, and gas sensors. [0003] About the preparation of zinc orthotitanate material, mainly adopt solution method, sol-gel method and sputtering method etc., for example publication number is: CN1884095A (application number: 200610021323.4), CN103230812A (appli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/32C30B25/18C30B33/02
CPCC30B29/32C30B25/18C30B33/02Y02P70/50
Inventor 马瑾栾彩娜乐永
Owner SHANDONG UNIV
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