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VO2-Sb film material with high speed and high data retention, and preparation method thereof

A technology of data retention and thin film materials, applied in the direction of electrical components, etc., can solve the problems of poor thermal stability of amorphous Sb thin films, and achieve the effects of low production cost, strong process controllability, and small component deviation

Active Publication Date: 2019-08-27
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The thermal stability of the amorphous Sb film is too poor, and the low resistivity of the crystalline Sb film leads to a larger current and higher power required for the fully crystallized SET operation of the film. These shortcomings are due to its explosive crystallization method, how It is still a challenge to adjust its crystallization method to optimize the performance of phase change memory

Method used

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  • VO2-Sb film material with high speed and high data retention, and preparation method thereof
  • VO2-Sb film material with high speed and high data retention, and preparation method thereof
  • VO2-Sb film material with high speed and high data retention, and preparation method thereof

Examples

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preparation example Construction

[0024] A vanadium dioxide-Sb thin film material with high speed and high data retention, whose chemical structure is (VO 2 ) x Sb 100-x , where VO 2 The atomic percentage content is 04 ~10 8 Ω, crystalline resistance 10 2 ~10 4 Ω. Its preparation method is as follows: using high-purity Sb simple substance and VO 2 As the target material, a magnetron sputtering device is used, a double-target co-sputtering method is adopted, high-purity argon is used as the working gas, and a quartz wafer or silicon wafer is used as the substrate material for surface deposition, and finally a transmission electron microscope is used to observe the microscopic structure, the specific steps are as follows:

[0025] (1) will VO 2 The target is installed in the magnetron DC sputtering target, and the Sb single substance target is installed in the magnetron RF sputtering target;

[0026] (2) Put the quartz wafer or silicon wafer substrate material into deionized water and absolute ethanol f...

Embodiment 1

[0033]A vanadium dioxide-Sb thin film material with high speed and high data retention, the preparation method of which is as follows:

[0034] (1) Using VO 2 Co-sputtering coating with Sb single target double target, VO 2 The target is installed in the magnetron DC sputtering target, and the Sb single target is installed in the magnetron RF sputtering target; the sputtering chamber is vacuumed, and when the vacuum degree in the sputtering chamber reaches 5×10 -4 Pa, fill the chamber with high-purity argon gas, the flow rate of argon gas is 50.0ml / min, until the glow pressure required for sputtering is 0.3Pa in the chamber; turn on the radio frequency power supply, and after the glow is stable, adjust the DC sputtering VO 2 The target power is 14 W, and the magnetron RF sputtering power of the Sb single target is 30 W. After the power is stable, turn on the substrate turntable and set the rotation rate to 5 rpm, open the baffle under the substrate, and sputter for 16 Minute...

Embodiment 2

[0038] Same as Example 1, the difference is that the magnetron radio frequency sputtering power of the Sb single substance target is 30W, and the DC sputtering VO 2 The target power is 17 W.

[0039] The Sb-VO prepared in above-mentioned embodiment 2 2 The film composition is measured by X-ray Energy Spectroscopy (EDS), and the film thickness is measured by a step meter. The test results are: the film composition is (VO 2 ) 7 Sb 93 , film thickness 100nm.

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Abstract

The invention discloses a VO2-Sb film material with high speed and high data retention, and a preparation method thereof. The material is characterized in that a chemical structural formula of the material is (VO2)xSb100-x, wherein the atomic number percentage content x of VO2 is greater than 0 and less than 30. The preparation method comprises the following specific steps: high-purity Sb and VO2are adopted as target materials; a magnetron sputtering device is adopted; a double-target co-sputtering method is adopted; high-purity argon is used as working gas; a quartz wafer or a silicon waferis adopted as a substrate material for surface deposition; the direct-current sputtering power of the Sb target is adjusted to be 14-18W; the radio-frequency sputtering power of the Sb target is adjusted to be 30-35W; sputter coating is carried out at the room temperature to obtain the VO2-Sb film material for a phase change memory. The film material has the advantages of relatively high crystallization temperature and data retention, relatively high crystallization speed, relatively large amorphous-state / crystalline-state resistance ratio and relatively high thermal stability.

Description

technical field [0001] The invention relates to the field of phase change storage materials, in particular to a vanadium dioxide-Sb thin film material with high speed and high data retention and a preparation method thereof. Background technique [0002] With the advent of the information age, human life has been closely related to computer technology all the time. Similarly, the rapid increase in the amount of information promotes the continuous development of information science and technology towards higher goals. As the core technology of the electronic industry, the development of memory has always attracted much attention and is a research hotspot in the field of electronic device research. Every breakthrough in the development of memory technology will bring rapid development to the electronics industry, such as from floppy disks that store very small amounts of data to USB flash drives and mobile hard disks that store large amounts of data today. However, memory re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/881H10N70/883H10N70/011H10N70/026Y02P70/50
Inventor 吕业刚张倩
Owner NINGBO UNIV
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