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Vanadium dioxide precursor liquid and method for preparing thin-film material by using the same

A vanadium dioxide and precursor liquid technology, applied in metal material coating process, solid-state chemical plating, coating and other directions, can solve the problems of unfavorable large-scale production, difficult control of alkoxide hydrolysis, dangerous high temperature operation, etc. The effect of reducing raw material costs, increasing operability and repeatability, and simplifying the formulation process

Active Publication Date: 2013-04-03
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, method 1 has high energy consumption, high temperature operation is dangerous and is easy to cause vanadium pollution; method 2 uses vanadium alkoxide very expensive, and the control of alkoxide hydrolysis is difficult, and the process controllability is poor; in method 3, the price of vanadium metal is higher and the treatment process Longer, are not conducive to large-scale production

Method used

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  • Vanadium dioxide precursor liquid and method for preparing thin-film material by using the same
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  • Vanadium dioxide precursor liquid and method for preparing thin-film material by using the same

Examples

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Effect test

Embodiment 1

[0070] Example 1 Preparation of vanadium dioxide precursor solution with vanadium pentoxide as raw material

[0071] 1. Add 0.182g of vanadium pentoxide to 15ml of deionized water, add concentrated ammonia water to adjust the pH value to 9.5 or above, stir and maintain the pH value, and the vanadium pentoxide is completely dissolved.

[0072] 2. Add 5 ml of 10% polyvinyl alcohol (molecular weight: 50,000) aqueous solution to it to obtain a precursor solution.

Embodiment 2

[0073] Example 2 Preparation of tetravalent vanadium dioxide precursor solution using vanadium pentoxide as raw material

[0074] 1. Add 0.182g of vanadium pentoxide to 20ml of deionized water, alternately add hydrochloric acid and hydrazine hydrate dropwise to keep the pH of the system at about 1.0, and stir until the system becomes a transparent blue solution.

[0075] 2. Add 0.6 g of polyethylene glycol (molecular weight: 3000) to the solution obtained in 1, and fully dissolve to obtain a precursor solution.

Embodiment 3

[0076] Example 3 Using vanadium pentoxide as a raw material to prepare a vanadium dioxide precursor solution doped with tungsten

[0077] 1. Add 0.182g of vanadium pentoxide to 20ml of deionized water, then adjust the pH value to 9.5 or above with ammonia water, stir and maintain the pH value, and the vanadium pentoxide is completely dissolved.

[0078]2. In order to keep the solution stable, add 0.15g citric acid therein.

[0079] 3. Under vigorous stirring, add 0.1ml of ammonium tungstate ((NH 4 ) 6 h 2 W 12 o 40 ·XH 2 O) Aqueous solution.

[0080] 3. Add 5ml of ethylene glycol to it to adjust the viscosity to obtain the precursor solution.

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Abstract

The invention belongs to the technical field of material chemistry, in particular relates to a vanadium dioxide precursor liquid and a method for preparing a thin-film material by using the same. The vanadium dioxide precursor liquid of the invention comprises a soluble vanadium salt, a film forming accelerator and a solvent. The invention further provides a method for preparing a vanadium dioxide thin film by using the vanadium dioxide precursor liquid. The invention overcomes the shortages of the prior preparation technique of liquid-phase vanadium dioxide, reduces the cost of raw materials, and can previously reduce or oxidize the vanadium raw material in the raw materials to quadrivalence so that vanadium element is not necessarily subjected to an oxidation-reduction reaction in the process of thermal treatment. The vanadium dioxide thin film prepared by the invention has uniform phase, good purity and intelligent response to temperature. The vanadium dioxide thin film prepared ona glass substrate has a light transmittance peak value up to 70% at most in a visual light region and an infrared light regulating performance up to 60% at most, and has wide application prospect in the fields of optical functional materials and electric functional materials.

Description

technical field [0001] The invention belongs to the technical field of material chemistry, and in particular relates to a vanadium dioxide precursor solution and a method for preparing thin film materials. Background technique [0002] my country is an energy-short country, but the current energy consumption per unit building area in my country is 2 to 3 times that of developed countries, and the total energy consumption of buildings in my country is showing an upward trend year by year. The proportion of my country's building energy consumption in total energy consumption has risen from 10% in the late 1970s to about 30% in 2007. At present, my country is in the stage of rapid industrialization and urbanization. The area of ​​houses built every year is as high as 1.6 billion to 2 billion square meters, which exceeds the sum of the annual built areas of all developed countries, and more than 95% of them are high energy consumption buildings. These buildings will continue to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C20/08
Inventor 高彦峰康利涛罗宏杰
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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