Process for preparing vanadium oxide film capable of regulating phase change temp.

A vanadium oxide film, phase transition temperature technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of high phase transition temperature, changing stress level, affecting stability, etc., to achieve infrared transmission. High pass rate, small package size, and the effect of improving the response rate

Inactive Publication Date: 2005-03-23
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this method, impurities are mixed in the preparation process, and the impurities change the stress level of the region, making the material not stable enough and prone to segregation, thereby affecting the stability of its performance; VO 2 The phase transition temperature is 68°C, because the phase transition temperature is too high, which is not conducive to the popularization and application of materials

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  • Process for preparing vanadium oxide film capable of regulating phase change temp.
  • Process for preparing vanadium oxide film capable of regulating phase change temp.
  • Process for preparing vanadium oxide film capable of regulating phase change temp.

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Embodiment 1

[0023] Embodiment 1 Phase transition temperature is the preparation method of vanadium oxide thin film of 28 ℃, comprises the following steps successively:

[0024] (1) The silicon wafer is cleaned by standard RCA to remove the polluting organic matter, dust and metal ion impurities on the surface of the silicon wafer. The ion beam sputtering method is used to deposit a layer of silicon oxide film on the silicon wafer. The target material used is SiO2 target material, the background vacuum is 3×10 -3 Pa, through argon to 2.6×10 -2 Pa, the ion beam power is 25W, the sputtering time is 20 minutes, the film thickness is about 50 nanometers, and then a layer of silicon nitride film is deposited. The target material used is silicon nitride target material, and the background vacuum is 2.4×10 -3 Pa, through argon to 2.6×10 -2 Pa, the ion beam power is 25W, the sputtering time is 45 minutes, and the film thickness is about 100 nanometers.

[0025] The above-mentioned silicon oxide...

Embodiment 2

[0029] Example 2 The method for preparing a vanadium oxide thin film with a phase transition temperature of 39°C includes the following steps in sequence:

[0030] (1) The silicon wafer is cleaned by standard RCA to remove the polluting organic matter, dust and metal ion impurities on the surface of the silicon wafer. Using the ion beam sputtering method, a layer of silicon oxide film is first deposited on the silicon wafer. The film thickness is about 100 nanometers, and then deposit a layer of silicon nitride film, the film thickness of which is about 50 nanometers.

[0031] (2) The vanadium oxide film is deposited on the above-mentioned silicon nitride film by ion beam reactive sputtering method, and the ion beam reactive sputtering process condition is: background vacuum 9×10 -4 Pa, through oxygen and argon, oxygen pressure 1×10 -3 Pa, argon pressure 1.5×10 -2 Pa, the ion beam current power is 25W, the substrate temperature is 350°C, and the sputtering time is 25 minutes...

Embodiment 3

[0034] Example 3 The phase transition temperature is a method for preparing a vanadium oxide thin film of 57°C, which includes the following steps in turn:

[0035](1) The silicon wafer is cleaned by standard RCA to remove the polluting organic matter, dust and metal ion impurities on the surface of the silicon wafer. Using the ion beam sputtering method, a layer of silicon oxide film is first deposited on the silicon wafer. The film thickness is about 70 nanometers, and then deposit a layer of silicon nitride film, the film thickness of which is about 85 nanometers.

[0036] (2) Using the ion beam reactive sputtering method, the vanadium oxide film is deposited on the above-mentioned silicon nitride film, and the ion beam reactive sputtering process conditions are: the background vacuum is 1.6×10 -3 Pa, through oxygen and argon, oxygen pressure 6.1×10 -3 Pa, argon pressure 1.8×10 -2 Pa, the ion beam current power is 45W, the substrate temperature is 270°C, and the sputterin...

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Abstract

This invention provides a preparation method of vanadium oxides film whose phase change temperature is variable. Siliconoxide film and silicon nitride film deposit on the silicon slice. The method of ion beam reactive sputtering is used to deposit vanadium oxide film. The processing conditions as followings: back bottom vacuum 4X10-4Pa-3X10-3Pa, oxygen pressure 6X10-4Pa-8X10-3Pa, argon gas pressure: 1X10-2Pa-2.3X10-2Pa,ion beam power: 8W-60W, substrate temperature: 120deg.C-450deg.C, sputter time: 10-45min, the vanadium target is butt material. The annealing treatment is for the sample. The processing conditions gas: argon or nitrogen gas, annealing temperature: 250deg.C-580deg.C, annealing time: 20-240 min, and then getting phase change vanadium oxide film.

Description

technical field [0001] The invention relates to a method for preparing a thin film, in particular to a method for preparing a vanadium oxide thin film. Background technique [0002] The comprehensive research on the properties of vanadium oxide was first completed by F.J.Morin of Bell Laboratories. After that, as the research on the properties of vanadium oxide gradually deepened, it was found that the lattice structure and spatial arrangement of vanadium oxide are different, and the electrical properties of various crystal structures are also very different. The phase structure that has attracted the most attention is phase transition. Vanadium dioxide VO 2 . [0003] VO 2 Single crystal materials have excellent electrical properties (at a conversion temperature of 68 ° C, within a temperature range of 0.1 ° C, the change in resistivity can reach 5 orders of magnitude), optical properties, VO 2 The semiconductor phase-metal phase transition of a single crystal belongs t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/34
Inventor 王双保周少波陈四海陈长虹易新建
Owner HUAZHONG UNIV OF SCI & TECH
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