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Low-temperature deposition method for vanadium dioxide thin film

A deposition method and technology of vanadium dioxide, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of weakened glass tempering effect, loss of phase change properties of film, and high tempering temperature, avoiding high temperature Annealing process, great application value, the effect of simplifying the production process

Active Publication Date: 2015-12-09
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This gives the preparation of VO on glazing 2 Thin films pose difficulties: if tempered glass is used to deposit VO 2 thin film, due to the high deposition temperature, the original toughening effect of the glass will be greatly weakened; if ordinary glass deposits VO 2 After the thin film is tempered, the tempering temperature is too high at this time, and the VO plated originally 2 The thin film will lose its phase change properties

Method used

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  • Low-temperature deposition method for vanadium dioxide thin film
  • Low-temperature deposition method for vanadium dioxide thin film
  • Low-temperature deposition method for vanadium dioxide thin film

Examples

Experimental program
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Embodiment 1

[0022] In this embodiment, VO 2 The film was prepared by DC reactive magnetron sputtering, using vanadium-tungsten alloy target (Wat.%=0.81%) as the target material, and the substrate was K9 glass, which was ultrasonically cleaned with alcohol and deionized water for 10 minutes respectively. The background vacuum is 6×10 -4 Pa, with oxygen and argon as the reaction gas and sputtering gas, before preparing the film, pre-sputter the target for 10 minutes to remove surface pollutants, the working vacuum is 0.5Pa, the oxygen partial pressure is 0.02Pa, and the deposition temperature is maintained at 245°C, during the process of depositing the film, add a negative bias voltage to the substrate, the bias voltage is -150V, the sputtering power is 80W, and the deposition time is 30min to obtain uniform and dense VO 2 film. Among them, this embodiment uses a vanadium-tungsten alloy target, and the VO can be easily adjusted by adjusting the tungsten content in the target. 2 The phase...

Embodiment 2

[0024] The vanadium dioxide thin film is prepared by DC reactive magnetron sputtering, using tungsten-doped vanadium-tungsten alloy target (W.at.%=0.81%) as the target material, and the substrate is toughened glass, which is ultrasonicated by alcohol and deionized water respectively. Wash for 10 minutes, and the background vacuum during film preparation is 6×10 -4 Pa, with oxygen and argon as the reaction gas and sputtering gas, before preparing the film, pre-sputter the target for 10 minutes to remove surface dirt, the working vacuum is 0.5Pa, the oxygen partial pressure is 0.02Pa, and the deposition temperature is maintained at At 240°C, during the process of depositing the film, a negative bias of -200V was added to the substrate, the sputtering power was 80W, and the deposition time was 30min, a uniform and dense vanadium dioxide film was obtained on the tempered glass substrate. The prepared vanadium dioxide thin film samples before and after the phase transition curves o...

Embodiment 3

[0026] The vanadium dioxide film was prepared by DC reactive magnetron sputtering, using pure vanadium as the target, and the substrate was K9 glass. After ultrasonic cleaning with alcohol and deionized water for 10 minutes, the background vacuum during film preparation was 6×10 -4 Pa, with oxygen and argon as the reaction gas and sputtering gas, before preparing the film, pre-sputter the target for 10 minutes to remove surface dirt, the working vacuum is 0.5Pa, the oxygen partial pressure is 0.02Pa, and the deposition temperature is maintained at 250°C, during the process of depositing the film, add -185V negative bias to the substrate, sputtering power is 80W, and the deposition time is 30min to obtain uniform and dense VO 2 film. The prepared vanadium dioxide thin film samples before and after the phase transition curves of sample transmittance versus wavelength are shown in image 3 , it can be seen from the figure that the prepared film has good phase transition properti...

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Abstract

The invention discloses a low-temperature deposition method for a vanadium dioxide thin film. A magnetron sputtering technique is adopted; vanadium metal or vanadium alloy is taken as a target; oxygen is taken as a reactant gas; argon is taken as a sputtering gas. A vacuum chamber is vacuumized until the air pressure is below the background vacuum of 1*10<-3> Pa before the thin film is prepared; then a mixed gas of the oxygen and the argon is pumped in, and oxygen partial pressure is held to be 0.01-0.06 Pa; in the process of deposition of the thin film, the deposition temperature is controlled to be 240-260 DEG C and negative bias is added to a base, the sputtering power density of the target surface is 2-3 W / cm<2> and the high-property VO2 thin film is obtained on the surface of the base. According to the low-temperature deposition method for the vanadium dioxide thin film, the deposition temperature of the VO2 thin film is low and is matched with appropriate negative bias and other technological parameters to prepare the high-property VO2 thin film which is even and compact, low in phase transition temperature of the vanadium dioxide and good in phase transition property; the production cost is greatly reduced.

Description

technical field [0001] The invention belongs to the technical field of preparation of functional thin films, and relates to a preparation process of a vanadium dioxide thin film, in particular to a low-temperature deposition method of a vanadium dioxide thin film. technical background [0002] VO 2 It is a solid thermal phase change material, single crystal VO 2 At the phase transition temperature (T c ) At 68°C, it will transform from the high-temperature tetragonal rutile type to the low-temperature monoclinic distorted rutile type. As the temperature changes, its crystalline structure will undergo a first-order displacement phase transition from a metallic state to a semiconductor state. . VO 2 The phase change characteristic of the material is a thermally induced phase change, and changes in temperature will cause reversible changes in its resistivity and light transmittance. 98% of the total energy of solar radiation is in the infrared and visible light bands, most...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/08C23C14/35
Inventor 张东平朱茂东杨凯范平蔡兴民罗景庭钟爱华林思敏
Owner SHENZHEN UNIV
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