Sb2Tex-SiO2 nano composite phase change material used on phase change memory and preparation method of Sb2Tex-SiO2 nano composite phase change material

A phase change memory and phase change material technology, applied in the field of Sb2Tex-SiO2 nanocomposite phase change material and preparation, can solve the problems of low crystallization temperature, poor thermal stability, hindering the application of phase change memory, etc.

Active Publication Date: 2013-07-31
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Sb 2 Te x Phase change material ratio Ge 2 Sb 2 Te 5 The phase change speed is fast and the melting temperature is low, but its low crystallization temperature (<100°C) results in poor thermal stability, which seriously hinders its application in phase change memory

Method used

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  • Sb2Tex-SiO2 nano composite phase change material used on phase change memory and preparation method of Sb2Tex-SiO2 nano composite phase change material
  • Sb2Tex-SiO2 nano composite phase change material used on phase change memory and preparation method of Sb2Tex-SiO2 nano composite phase change material
  • Sb2Tex-SiO2 nano composite phase change material used on phase change memory and preparation method of Sb2Tex-SiO2 nano composite phase change material

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Embodiment 1

[0029] The nanocomposite phase change material in this embodiment can adopt Sb 2 Te 3 target and SiO 2 Prepared by target co-sputtering method. The specific preparation conditions are as follows: Ar gas with a purity of 99.999% is introduced simultaneously during the co-sputtering process. Sb 2 Te 3 target and SiO 2 Targets use RF power, Sb 2 Te 3 The power of the target is set to 20W, SiO 2 The power is set to 5W, 10W, 15W, 50W, 60W respectively, by changing the SiO 2 The power to get different components. The sputtering time is preferably 30 minutes, and the film thickness is about 120 nm.

[0030] Among them, thin film samples of different components can be prepared on different substrates. The substrates are Al film, Si sheet substrate, SiO 2 Chip substrate, copper mesh. The samples sputtered on the Al film were used for EDS testing, and the specific components of the materials are shown in Table 1.

[0031] Table 1

[0032] SiO 2 the power

Test...

Embodiment 2

[0037] Depend on figure 2 It can be seen that SiO 2 There are five orders of magnitude difference between high and low resistance with a power of 15W, and the resistance in all components is suitable, and the crystallization temperature is around 420K, which has the potential for practical application, and the research on its electrical properties can be carried out.

[0038] In this embodiment, the phase change material thin film is deposited on the substrate with Al lower electrode and W heating electrode. The specific conditions of sputtering are: use Sb 2 Te 3 target and SiO 2 In the method of target co-sputtering, Ar gas with a purity of 99.999% is introduced simultaneously during the co-sputtering process, and the gas flow rate of Ar is 20 sccm. Sb 2 Te 3 target and SiO 2 Targets use RF power, Sb 2 Te 3 The power of the target is set to 20W, SiO 2 The power is set to 15W, the sputtering time is 30min, and the film thickness is about 120nm.

[0039] see image...

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Abstract

The invention discloses a Sb2Tex-SiO2 nano composite phase change material used on a phase change memory. The material is formed by compositing a phase change material Sb2Tex with SiO2 and has a chemical formula of (Sb2Tex)y(SiO2)1-y, wherein x is larger than or equal to 0.5 but smaller than or equal to 3 and y is larger than or equal to 0.2 but smaller than 1. The Sb2Tex-SiO2 nano composite phase change material has the advantages that through doping the SiO2 into the phase change material, the phase change material with a reversible phase change ability is isolated into areas with nanoscales by the amorphous state SiO2, and a composite structure is formed, so the resistivity and the crystallization temperature of the phase change material are increased and the heat conductivity of the phase change material is reduced. Due to the increase of the crystalline state resistance of the phase material, a Reset current of the phase change memory device can be reduced, and thereby the barrier that the Reset current of the phase change is overlarge is overcome; due to the rising of the crystallization temperature, the stability of the Sb2Tex-SiO2 phase material device can be improved; dueto the decline of the melting temperature, the power consumption of the Sb2Tex-SiO2 phase material device is effectively reduced; and due to the reduction of the heat conductivity, the utilization rate of energy can be improved.

Description

technical field [0001] The present invention relates to phase change material and preparation method, especially to a kind of Sb used for phase change memory 2 Te x -SiO 2 The invention relates to a nanocomposite phase-change material and a preparation method, which belong to the related field of semiconductor memory. Background technique [0002] With the rapid development of information, the amount of data information has increased sharply, and the requirements for information storage have also increased dramatically. At present, the mainstream non-volatile memory Flash in the market has a relatively slow read and write speed, short cycle life, and size reduction will reach the limit, and will be replaced by the next generation of new memory. Phase-change memory meets people's needs for non-volatile devices, and its manufacturing process is quite simple, so it has attracted more and more people's attention. [0003] Phase change memory adopts Ge 2 Sb 2 Te 5 The repr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 宋志棠朱敏吴良才饶峰张挺
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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