Method for preparing vanadium dioxide film

A technology of vanadium dioxide and thin film, which is applied in the field of vanadium dioxide thin film preparation of metal vanadium or low-valent vanadium oxidation annealing, can solve the problems of difficulty, no control of annealing atmosphere, poor repeatability, etc., and achieve process compatibility, excellent performance, good repeatability

Inactive Publication Date: 2014-09-10
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although literature (Xu X F, et al. A novel sputtering oxidation coupling (SOC) method to fabricate VO 2 thin film[J].Applied Surface Science,2010,256:2750–2753.) reported the preparation process of metal vanadium oxidation to form vanadium dioxide film on single crys...

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  • Method for preparing vanadium dioxide film
  • Method for preparing vanadium dioxide film
  • Method for preparing vanadium dioxide film

Examples

Experimental program
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Embodiment 1

[0023] In this embodiment, float glass is used as a substrate, and a metal vanadium film is plated on its surface, then annealed in a vacuum tube annealing furnace to form a vanadium dioxide film, and then the performance of the film is tested. Wherein the annealing oxygen gas pressure is 18Pa, and concrete implementation steps are as follows:

[0024] 1 Substrate cleaning. Put the glass substrate in alcohol for 10 minutes to remove oil on the surface of the substrate. After ultrasonic cleaning, take it out quickly, dry it with nitrogen, and put it into the coating chamber.

[0025] 2 Plating 50nm metal vanadium thin film. The vanadium target used in the coating system is a 320×140mm planar target with a purity of 99.99%. The sputtering process gas is argon with a purity of 99.999%. System base vacuum is 1×10 -3 Pa. During sputter coating, adjust the argon flow rate to 50sccm, and the system pressure is 0.22Pa at this time; 3. Set the sputtering power to 500W, and the spu...

Embodiment 2

[0031] In this embodiment, float glass is used as a substrate, and a metal vanadium film is plated on its surface, then annealed in a vacuum tube annealing furnace to form a vanadium dioxide film, and then the performance of the film is tested. Wherein the annealing oxygen gas pressure is 33Pa, and concrete implementation steps are as follows:

[0032] 1 Substrate cleaning. Put the glass substrate in alcohol for 10 minutes to remove oil on the surface of the substrate. After ultrasonic cleaning, take it out quickly, dry it with nitrogen, and put it into the coating chamber.

[0033] 2 Plating 50nm metal vanadium thin film. The vanadium target used in the coating system is a 320×140mm planar target with a purity of 99.99%. The sputtering process gas is argon with a purity of 99.999%. System base vacuum is 1×10 -3 Pa. During sputter coating, adjust the argon flow rate to 50sccm, and the system pressure is 0.22Pa at this time; set the sputtering power to 500W, and the sputte...

Embodiment 3

[0039] In this embodiment, float glass is used as a substrate, and a metal vanadium film is plated on its surface, then annealed in a vacuum tube annealing furnace to form a vanadium dioxide film, and then the performance of the film is tested. The specific implementation steps are as follows:

[0040] 1 Substrate cleaning. Put the glass substrate in alcohol for 10 minutes to remove oil on the surface of the substrate. After ultrasonic cleaning, take it out quickly, dry it with nitrogen, and put it into the coating chamber.

[0041] 2 Plating 50nm metal vanadium thin film. The vanadium target used in the coating system is a 320×140mm planar target with a purity of 99.99%. The sputtering process gas is argon with a purity of 99.999%. System base vacuum is 1×10 -3 Pa. During sputter coating, adjust the argon flow rate to 50sccm, and the system pressure is 0.22Pa at this time; set the sputtering power to 500W, and the sputtering voltage is 338V at this time; take out the fil...

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Abstract

The invention discloses a method for preparing a vanadium dioxide film. According to the method, metal vanadium or low-valence vanadium oxide film is annealed in oxygen and vacuum to obtain a phase-transition vanadium dioxide film; the most proper oxygen partial pressure, the annealing temperature and the annealing time are selected according to the type and thickness of the low-valence vanadium oxide to obtain a vanadium dioxide film with excellent performance, wherein the infrared regulation rate at 2,400nm can be 58 percent, and the visible light transmittance can be 43 percent; the doped low-valence vanadium oxide film is oxidized to obtain the doped vanadium dioxide film, and the phase transition temperature of the vanadium dioxide can be regulated by means of doping to adapt to different requirements. The vanadium dioxide film can be applied to optical information storage, photoelectric switches, intelligent windows and uncooled infrared focal plane imaging; the method is compatible with large-scale coated glass production process, and a vanadium dioxide film with excellent performance can grow on amorphous glass.

Description

technical field [0001] The invention relates to the field of functional materials, and relates to a method for preparing a vanadium dioxide film, in particular to a method for preparing a vanadium dioxide film by oxidizing and annealing metal vanadium or low-valent vanadium. It is used to prepare 10-300nm thick vanadium dioxide film. technical background [0002] Vanadium dioxide film will undergo a phase transition from semiconductor to metal at 68 ° C. During the phase transition process of vanadium dioxide film, there are sudden changes in optical and electrical properties and thermal hysteresis, and the phase transition temperature can be changed by doping , so vanadium dioxide has high research value and wide application value as a functional material. [0003] Vanadium dioxide film has high infrared transmittance at low temperature, but has very low infrared transmittance at high temperature. Therefore, using this characteristic, vanadium dioxide film with phase chang...

Claims

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Application Information

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IPC IPC(8): C23C14/58C23C16/56C23C14/08C23C16/40
Inventor 王少伟刘星星陆卫俞立明陈飞良陈效双
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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