32 results about "Annealing atmosphere" patented technology

The invention discloses 780MPa-grade hot-dip galvanized DH steel and a manufacturing method thereof, the alloy components of DH780 steel grade are optimized, the contents of Si and Mn elements are reduced, and the generation of external oxides is reduced, so that the risk of plating leakage defects is reduced; besides, by improving the dew point in the annealing process and increasing the oxygen partial pressure in the annealing atmosphere, internal oxidation of Si and Mn elements on the surface layer of the DH780 steel grade is promoted, so that the plating leakage defect is effectively reduced, and the surface quality of the steel plate is remarkably improved; according to the method, the production cost is reduced, the weldability and machinability of a product are improved, the integrity and uniformity of a plating layer are effectively improved, the corrosion resistance of the product is improved, the service life of the product is prolonged, and the application range of the DH780 steel grade hot-dip galvanized steel plate is widened.

The invention discloses a preparation method and application of a perovskite layer of a perovskite solar cell, and relates to the technical field of perovskite cells. The preparation method comprises the following steps: dissolving a perovskite material in an organic solvent to prepare a precursor solution; and performing slit coating on a substrate by using the precursor solution, and obtaining the perovskite layer after annealing, wherein the annealing atmosphere comprises organic salt steam and nitrogen. According to the preparation method disclosed by the invention, the defects of uneven film thickness, disordered solvent volatilization and many film surface cracks when the perovskite layer is prepared by slit coating are overcome through a special annealing process, the problem that the slit coating technology and the annealing process are incompatible in the traditional technology is solved, large-scale preparation of high-quality and low-defect film layers is realized, and the preparation method is suitable for industrial production. The method is suitable for large-scale production of efficient and stable perovskite solar cells.

A method for processing a substrate includes positioning a silicon substrate in a deposition chamber. One or more intermediate layers are deposited on a surface of the silicon. The one or more intermediate layers can include strontium, which combines with the silicon to form strontium silicide. Alternatively, the one or more intermediate layers comprise germanium. A layer of amorphous strontium titanate is deposited on the one or more intermediate layers in a transient environment in which oxygen pressure is reduced while temperature is increased. The substrate is then exposed to an oxidizing and annealing atmosphere that oxidizes the one or more intermediate layers and converts the layer of amorphous strontium titanate to crystalline strontium titanate.

The invention relates to the technical field of ceramic capacitors, in particular to an MLCC product and a preparation method thereof. The preparation method of the MLCC product comprises the following steps: carrying out drying treatment on an MLCC ceramic body subjected to chamfering treatment; in an annealing atmosphere containing nitrogen and / or inert gas, the dried MLCC body is subjected to multi-section annealing treatment, and the multi-section annealing treatment comprises a heating section, a heat preservation section and a cooling section which are conducted in sequence; wherein the annealing temperature of the heat preservation section ranges from 700 DEG C to 900 DEG C, and the annealing time of the heat preservation section ranges from 2 h to 5 h; and carrying out end sealing treatment on the MLCC ceramic body subjected to the multi-section annealing treatment. The MLCC product prepared by adopting the preparation method is good in leakage current stability in a high-temperature IR test, the internal stress is obviously reduced, and the MLCC product has higher reliability, stability and service life in long-term work, and can meet the special requirements of the industries of vehicle-mounted electronics, base stations, servers and the like.

This invention belongs to the field of annealing furnace technology, specifically an annealing atmosphere control component, an annealing furnace, and its usage method. Addressing the problems of low gas replacement efficiency, poor sealing, and safety hazards during furnace opening in traditional equipment, the following technical solution is proposed: Liftable furnace doors are provided on both sides of the furnace body, forming a sealed cavity with the trolley; the annealing atmosphere control structure includes a dual-gas box system, with protective gas injected from the furnace bottom via a gas guide pipe, utilizing density differences to form a stable upward airflow; the sealing structure achieves a complete seal between the furnace body, trolley, and furnace door through a combination of annular sealing strips and double-layer bottom sealing strips; the protective structure uses a damping rotating shaft-linked arc-shaped protective plate that automatically unfolds to form a safety barrier when the furnace is opened; this device, through optimized gas flow path, multi-stage sealing design, and combined furnace opening protection, effectively reduces residual oxygen content, prevents gas leakage, and ensures operational safety, making it suitable for high-precision metal annealing.

Provided in the present invention are an annealing device and an annealing method. The annealing device comprises a chamber, a cover, a cover driving mechanism and a gas inlet device, wherein the gas inlet device comprises a chamber gas inlet unit and a cover gas inlet unit. The chamber gas inlet unit is configured to convey a first gas into the chamber, such that the pressure inside the chamber is a first pressure; and the cover gas inlet unit is configured to convey a second gas into the cover. The annealing device is configured as follows: when a hot plate is used to perform a process on a substrate, the cover driving mechanism drives the cover to move towards the substrate and cover the substrate, and then the cover gas inlet unit conveys the second gas into the cover, such that the pressure inside the cover is a second pressure, the second pressure being greater than the first pressure. According to the present invention, for a process where a mixture of nitrogen and hydrogen is required to form an annealing atmosphere, compared with introducing the mixed gas of nitrogen and hydrogen into the whole chamber, simply introducing the mixed gas of nitrogen and hydrogen into the cover greatly reduces the consumption of hydrogen, thereby reducing the process cost and improving the process safety.

The invention discloses a method for improving the quality and consistency of an oriented electrical steel glass film. The method comprises the following steps: controlling the temperature rise rate of decarburization, nitriding and annealing to be 200-400 DEG C / s; the partial pressure ratio P (H2O) / P (H2) of the decarburization nitriding annealing atmosphere is controlled to be 0.20-0.30; the oxygen content of decarburization, nitriding and annealing is controlled to be 500-800 ppm; the hydration rate of the magnesium oxide coating is controlled to be less than 2.0; and in the high-temperature annealing process, in the annealing temperature range of 700-1200 DEG C, the heating rate is controlled to be less than 8 DEG C / h or heat preservation treatment is carried out for more than 15 hours. Through the implementation of the method, the oriented electrical steel product glass film is compact, has no defects such as dot-shaped crystal leakage and the like, meanwhile, the uniformity is good, the quality of the head glass film, the middle glass film and the tail glass film is uniform and consistent in the length direction of the steel coil, the proportion of surface degraded products caused by the defects of the bottom layer of the glass film is reduced to 20% or below from existing 40% or above, and the quality and the uniformity of the glass film are obviously improved.

This invention relates to the field of piezoelectric materials and discloses a method for preparing a potassium sodium niobate thin film. The method involves first synthesizing a ceramic target material from niobium pentoxide, potassium carbonate, and sodium carbonate in a solid phase; then placing the ceramic target material in a magnetron sputtering apparatus for sputtering to form an amorphous thin film; finally, adding the amorphous thin film to an annealing atmosphere in a crucible for annealing to form a potassium sodium niobate thin film. This method uses magnetron sputtering to prepare an amorphous potassium sodium niobate thin film under conditions below the film crystallization temperature, followed by annealing to crystallize the film. During annealing, an alkali metal atmosphere is used to compensate and control the alkali metal elements in the film. This method is still based on magnetron sputtering, which is suitable for large-size thin film growth, offering strong process controllability and high production efficiency. The alkali metal atmosphere compensation allows for control of the alkali metal element composition in the potassium sodium niobate.

The invention relates to a decarburization annealing process for oriented silicon steel, which comprises the following steps: by taking decarburization annealing heating temperature, # imgabs 0 # partial pressure ratio in annealing atmosphere and decarburization annealing time as design parameters, introducing the decarburization annealing heating temperature, # imgabs 1 # partial pressure ratio in the annealing atmosphere and the decarburization annealing time into a decarburization dynamic process; carbon concentrations of all points of the steel plates with different thickness specifications at different time are obtained, so that the optimal matching relation of the decarburization annealing heating temperature, the # imgabs2 # partial pressure ratio in the annealing atmosphere and the decarburization annealing time is obtained when the decarburization requirement is met, and then the optimal value of a third variable is obtained through calculation when any two parameters are fixed; the decarburization annealing heating temperature is 800-860 DEG C, the decarburization annealing time is 40-80 seconds, and the partial pressure ratio # imgabs3 # ranges from 0.25 to 0.50; according to the method, decarburization annealing is accurately controlled, and a basis is provided for designing decarburization annealing process parameters for research and development of new oriented silicon steel varieties.

The present invention belongs to the field of manufacturing high-strength steel for automobiles, and particularly relates to a high-plating-property and high-strength-ductility-product TRIP steel and a manufacturing method thereof. The chemical composition of the TRIP steel includes, by mass percentage, C: 0.16 - 0.24%, Mn: 1.5 - 2.4%, Si: 0.5 - 1.2%, Al: 0.6 - 1.5%, Ti: 0.008 - 0.08%, Cu: 0.05 - 0.3%, Bi: 0.008 - 0.05%, B: 0.001 - 0.003%, P: below 0.015%, S: below 0.002%, and the balance is Fe. The heating temperature of the slab is 1100 - 1250°C, the finish rolling temperature is 20 - 50°C below the A3 line, the coiling temperature is 500 - 600°C, the dew point of the annealing atmosphere is above -30°C, the critical annealing temperature is 780 - 900°C, the critical annealing holding time is 90 - 600 s, the cooling rate is 10 - 50°C / s, the bainite isothermal annealing temperature is 350 - 450°C, and the isothermal annealing holding time is 40 - 600 s. The present invention can greatly improve the surface oxidation problem of the TRIP steel during annealing on the premise of considering mechanical properties, improve the plating property, and improve the process stability.

The invention discloses a MHz-level low-loss Fe-Si-Al magnetic powder core and an infiltration diffusion preparation method thereof, and the method comprises the following steps: (1) powder infiltration: completely immersing Fe-Si-Al alloy powder in a molten tin-based metal material, and taking out the Fe-Si-Al alloy powder after the Fe-Si-Al alloy powder is fully wetted; (2) diffusion annealing: carrying out diffusion annealing on the wetted Fe-Si-Al powder in an annealing atmosphere; (3) compression molding: adding a binder, uniformly stirring, heating and drying, then adding a release agent, uniformly stirring, and pressing into a green body part; and (4) heat treatment is conducted, specifically, the green body piece in the step (3) is annealed and cooled under the protective atmosphere, and the MHz-level low-loss Fe-Si-Al magnetic powder core is obtained. According to the scheme, by means of the metal diffusion solid solution principle, the working frequency of the Fe-Si-Al magnetic powder core material is improved to MHz, and meanwhile the Fe-Si-Al magnetic powder core material has high effective magnetic conductivity and low power loss.

The application discloses an ultrathin oriented silicon steel strip and a preparation method thereof, and belongs to the technical field of ultrathin oriented silicon steel, and overcomes the defects of long preparation process and complex process of the ultrathin oriented silicon steel strip with low loss. The preparation method of the ultrathin oriented silicon steel strip comprises the following steps: step 1, selecting an oriented silicon steel strip with a grain size of 1.0-2.0 cm and an isometricity of 0.8-1.2 as a raw material; step 2, performing two-pass rolling on the raw material to obtain a cold-rolled ultrathin strip; the total reduction of the two-pass rolling is 70%-85%, and the reduction ratio of the first-pass rolling to the second-pass rolling is 7.5:2.5-9.0:1.0; and step 3, annealing the cold-rolled ultrathin strip; the annealing temperature is 800-880 DEG C, the annealing time is 5-20 min, the annealing atmosphere is high-purity hydrogen, the unit cross-sectional area front tension is 0.15-0.5 kg / mm 2 , and the unit cross-sectional area back tension is 0.15-0.3 kg / mm 2 . The preparation method has a simple process flow, and the prepared ultrathin oriented silicon steel strip has low medium-frequency loss, high magnetic induction and low magnetostriction noise.