14 results about "Annealing atmosphere" patented technology

The invention discloses a preparation method and application of a perovskite layer of a perovskite solar cell, and relates to the technical field of perovskite cells. The preparation method comprises the following steps: dissolving a perovskite material in an organic solvent to prepare a precursor solution; and performing slit coating on a substrate by using the precursor solution, and obtaining the perovskite layer after annealing, wherein the annealing atmosphere comprises organic salt steam and nitrogen. According to the preparation method disclosed by the invention, the defects of uneven film thickness, disordered solvent volatilization and many film surface cracks when the perovskite layer is prepared by slit coating are overcome through a special annealing process, the problem that the slit coating technology and the annealing process are incompatible in the traditional technology is solved, large-scale preparation of high-quality and low-defect film layers is realized, and the preparation method is suitable for industrial production. The method is suitable for large-scale production of efficient and stable perovskite solar cells.

A method for processing a substrate includes positioning a silicon substrate in a deposition chamber. One or more intermediate layers are deposited on a surface of the silicon. The one or more intermediate layers can include strontium, which combines with the silicon to form strontium silicide. Alternatively, the one or more intermediate layers comprise germanium. A layer of amorphous strontium titanate is deposited on the one or more intermediate layers in a transient environment in which oxygen pressure is reduced while temperature is increased. The substrate is then exposed to an oxidizing and annealing atmosphere that oxidizes the one or more intermediate layers and converts the layer of amorphous strontium titanate to crystalline strontium titanate.

This invention belongs to the field of annealing furnace technology, specifically an annealing atmosphere control component, an annealing furnace, and its usage method. Addressing the problems of low gas replacement efficiency, poor sealing, and safety hazards during furnace opening in traditional equipment, the following technical solution is proposed: Liftable furnace doors are provided on both sides of the furnace body, forming a sealed cavity with the trolley; the annealing atmosphere control structure includes a dual-gas box system, with protective gas injected from the furnace bottom via a gas guide pipe, utilizing density differences to form a stable upward airflow; the sealing structure achieves a complete seal between the furnace body, trolley, and furnace door through a combination of annular sealing strips and double-layer bottom sealing strips; the protective structure uses a damping rotating shaft-linked arc-shaped protective plate that automatically unfolds to form a safety barrier when the furnace is opened; this device, through optimized gas flow path, multi-stage sealing design, and combined furnace opening protection, effectively reduces residual oxygen content, prevents gas leakage, and ensures operational safety, making it suitable for high-precision metal annealing.

This invention relates to the field of piezoelectric materials and discloses a method for preparing a potassium sodium niobate thin film. The method involves first synthesizing a ceramic target material from niobium pentoxide, potassium carbonate, and sodium carbonate in a solid phase; then placing the ceramic target material in a magnetron sputtering apparatus for sputtering to form an amorphous thin film; finally, adding the amorphous thin film to an annealing atmosphere in a crucible for annealing to form a potassium sodium niobate thin film. This method uses magnetron sputtering to prepare an amorphous potassium sodium niobate thin film under conditions below the film crystallization temperature, followed by annealing to crystallize the film. During annealing, an alkali metal atmosphere is used to compensate and control the alkali metal elements in the film. This method is still based on magnetron sputtering, which is suitable for large-size thin film growth, offering strong process controllability and high production efficiency. The alkali metal atmosphere compensation allows for control of the alkali metal element composition in the potassium sodium niobate.

The application discloses an ultrathin oriented silicon steel strip and a preparation method thereof, and belongs to the technical field of ultrathin oriented silicon steel, and overcomes the defects of long preparation process and complex process of the ultrathin oriented silicon steel strip with low loss. The preparation method of the ultrathin oriented silicon steel strip comprises the following steps: step 1, selecting an oriented silicon steel strip with a grain size of 1.0-2.0 cm and an isometricity of 0.8-1.2 as a raw material; step 2, performing two-pass rolling on the raw material to obtain a cold-rolled ultrathin strip; the total reduction of the two-pass rolling is 70%-85%, and the reduction ratio of the first-pass rolling to the second-pass rolling is 7.5:2.5-9.0:1.0; and step 3, annealing the cold-rolled ultrathin strip; the annealing temperature is 800-880 DEG C, the annealing time is 5-20 min, the annealing atmosphere is high-purity hydrogen, the unit cross-sectional area front tension is 0.15-0.5 kg / mm 2 , and the unit cross-sectional area back tension is 0.15-0.3 kg / mm 2 . The preparation method has a simple process flow, and the prepared ultrathin oriented silicon steel strip has low medium-frequency loss, high magnetic induction and low magnetostriction noise.

The application provides a Nb micro-alloyed oriented silicon steel decarburization annealing oxidation layer structure regulation method, and relates to the technical field of oriented silicon steel decarburization annealing. The Nb micro-alloyed oriented silicon steel decarburization annealing oxidation layer structure regulation method comprises the following steps: S1, selecting oriented silicon steel with a Si element mass fraction of 3.0% as a base material, adding Nb element to the base material for micro-alloying treatment, and preparing Nb micro-alloyed oriented silicon steel; S3, placing the Nb micro-alloyed oriented silicon steel prepared in S1 in the decarburization annealing atmosphere prepared in S2 for decarburization annealing treatment, and precisely regulating the thickness of the oxidation layer and the content ratio of spherical oxides to strip-shaped oxides in the oxidation layer after decarburization annealing of the oriented silicon steel by regulating the Nb element addition amount, the decarburization annealing temperature and the holding time. The regulation law of Nb and process parameters on the oxidation layer is clear, the oxidation layer structure is precisely controllable, and the process standardization is supported.

The application discloses a kind of DP780 dual-phase steel segmented dew point regulation annealing process, including heating section, isothermal section and cooling section;The heating section: the dual-phase steel steel strip is heated to 710~730 first, in this process, the dew point of annealing atmosphere is at-20~-15, while maintaining hydrogen volume fraction at 10~15%;Heated to 810~830 again, in this process, the dew point of annealing atmosphere is reduced to-60~-55, while keeping hydrogen volume fraction in the range of 10~15%;The isothermal section: keep warm at 820 DEG C temperature, during maintaining the dew point of annealing atmosphere at-50~-45;The cooling section: cooling to 450~470, in this process, the dew point of annealing atmosphere is kept at-30~-25.The process will significantly reduce the surface coverage of outer oxide to 5% or less, the plating rate is reduced to 3% or less, while ensuring that the tensile strength of dual-phase steel is not less than 780MPa and elongation is not less than 19%, mechanical properties and coating quality of high level are realized.

The invention relates to a method for producing a semiconductor device, comprising the following steps: providing a semiconductor body (1) of SiC having a top side (10); producing a silicon-containing interface layer (Fig. 1) directly on the top side (10), the interface layer (22) having a thickness of at most 5 nm; -applying a nitride-based dielectric layer (2) directly on the silicon-containing interface layer, the dielectric layer (2) being applied at a thickness of at least 5 nm; -annealing the dielectric layer (2) in an annealing atmosphere comprising hydrogen at a temperature of at least 1050 DEG C such that hydrogen atoms at the nitrogen vacancies are incorporated into the nitride-based dielectric substance (2); and applying an electrically conductive layer (3 Fig. 6) on the annealed dielectric layer (2).

This invention belongs to the field of functional materials and gas sensing, specifically disclosing a method for preparing a bismuth ferrite gas sensor and its application. The method employs gradient annealing, placing the bismuth ferrite sample in a series of atmospheres with continuously increasing oxygen partial pressures, ranging from zero oxygen partial pressure to 100% oxygen partial pressure. The oxygen vacancy concentration, ferroelectric domain order, and gas-sensing performance of the sample after annealing are measured, establishing a correlation between oxygen partial pressure, oxygen vacancy concentration, ferroelectric domain order, and gas-sensing performance, thereby improving the gas-sensing properties of the material. This invention also provides the application of this method in the preparation of bismuth ferrite gas sensors. The above method can maximize the sensor's sensitivity.

The application provides a SiC substrate and an interface state improvement method thereof, and the interface state improvement method comprises the following steps: performing vapor phase cleaning on the surface of the SiC substrate by using dichloroethylene in an oxygen-containing atmosphere; performing first annealing on the cleaned SiC substrate in a mixed atmosphere of N2 and N2O; performing oxidation treatment on the surface of the SiC substrate after the annealing treatment, so as to form a silicon oxide layer; performing second annealing on the SiC substrate after the oxidation treatment in a mixed atmosphere of N2 and N2O; and the volume ratio of N2O to N2 in the second annealing atmosphere is greater than the volume ratio of N2O to N2 in the first annealing atmosphere. By gradient design and synergistic optimization of the gas partial pressure and temperature of the annealing process before and after the oxidation, gradient and controllable doping of nitrogen atoms are realized, and then accurate control from "surface pre-passivation" to "interface depth modification" is realized, so that the interface quality of the gate oxide layer is more effectively improved, and the SiC / SiO2 interface state density is obviously reduced.

The invention relates to the technical field of semiconductor material preparation, in particular to a preparation method of a p-type beta-Ga2O3 single crystal thin film, which utilizes pulsed laser deposition to prepare a gallium oxide thin film in a high oxygen pressure atmosphere, realizes great reduction of oxygen vacancy defect concentration in gallium oxide, reduces n-type carrier concentration increase caused by oxygen vacancy, and improves the yield of the gallium oxide thin film. The method has the advantages that the gallium oxide is doped with the nitrogen element, so that the p-type doping is difficult, the nitrogen element is guided to replace oxygen ions in gallium oxide crystal lattices under the action of the annealing atmosphere, the p-type conductive characteristic is formed, the hole concentration of the gallium oxide thin film is improved, and finally the high-quality beta-Ga2O3 thin film which is controllable in size and thickness and has p-type conductivity is obtained. By controlling the annealing time, the hole mobility of the thin film can reach up to 18 cm / V.s, and the hole concentration can reach up to 5.0 * 10 < 16 > / cm. The method is simple in process, low in manufacturing cost and suitable for industrial large-scale production, and important technical support is provided for research and development of high-performance power devices and deep ultraviolet detectors.

The invention relates to a preparation method of a composite substrate and the composite substrate, and the method comprises the steps: providing a first wafer and a second wafer, the substrates of the first wafer and the second wafer are semiconductor materials, and a buried oxide layer is formed on the second wafer; bonding the first wafer and the second wafer to form a bonded wafer; carrying out annealing treatment on the bonded wafer in the process chamber in an annealing atmosphere; the annealing treatment comprises a heating treatment stage, an annealing stage and a cooling treatment stage; in the heating treatment stage, the internal temperature of the process chamber is increased to a preset annealing temperature from an initial temperature; in the annealing stage, the internal temperature is kept at a preset annealing temperature for a preset annealing duration; in the cooling treatment stage, the internal temperature is reduced to the cooling temperature from the preset annealing temperature; the annealing atmosphere comprises oxygen during at least part of the time period of the annealing treatment, so that an oxidized filler is formed between the first wafer and the second wafer. Therefore, the edge breadth uniformity of the composite substrate is effectively improved.

The application discloses a MHz-level low-loss FeSiAl magnetic powder core and a sintering diffusion preparation method thereof, and comprises the following steps: (1) powder immersion: completely immerse FeSiAl alloy powder in molten Sn-based metal material, and take out after sufficient wetting; (2) diffusion annealing: perform diffusion annealing on the wet FeSiAl powder in an annealing atmosphere; (3) pressing forming: add a binder, uniformly stir, heat and dry, then add a release agent, uniformly stir, and then press into a green part; (4) heat treatment: perform annealing on the green part in the step (3) in a protective atmosphere, and cool to obtain the MHz-level low-loss FeSiAl magnetic powder core. According to the scheme, the working frequency of the FeSiAl magnetic powder core material is increased to MHz, and meanwhile, the effective permeability is relatively high and the power loss is relatively low.

The invention relates to the technical field of semiconductor material preparation, in particular to an annealing process of a p-type beta-Ga2O3 single crystal thin film, which accurately regulates lattice defects of a gallium oxide thin film and inhibits formation of oxygen vacancies through a multi-stage atmosphere regulation and temperature gradient optimization technology. Under the action of the annealing atmosphere, non-metallic elements are guided to replace oxygen elements in gallium oxide crystal lattices, p-type conductive characteristics are formed, the hole concentration and the crystal quality of the gallium oxide thin film are improved, and finally the high-quality p-type beta-Ga2O3 single crystal thin film which is controllable in size and thickness and remarkable in Hall effect is obtained. By controlling the annealing time, the hole mobility of the thin film can reach up to 18 cm / V.s, the hole concentration can reach up to 5.0 * 10 < 16 > cm <->, and a solid foundation is laid for practical application of next-generation power devices and deep ultraviolet light detectors.