31 results about "Annealing atmosphere" patented technology

The invention discloses a preparation method and application of a perovskite layer of a perovskite solar cell, and relates to the technical field of perovskite cells. The preparation method comprises the following steps: dissolving a perovskite material in an organic solvent to prepare a precursor solution; and performing slit coating on a substrate by using the precursor solution, and obtaining the perovskite layer after annealing, wherein the annealing atmosphere comprises organic salt steam and nitrogen. According to the preparation method disclosed by the invention, the defects of uneven film thickness, disordered solvent volatilization and many film surface cracks when the perovskite layer is prepared by slit coating are overcome through a special annealing process, the problem that the slit coating technology and the annealing process are incompatible in the traditional technology is solved, large-scale preparation of high-quality and low-defect film layers is realized, and the preparation method is suitable for industrial production. The method is suitable for large-scale production of efficient and stable perovskite solar cells.

A method for processing a substrate includes positioning a silicon substrate in a deposition chamber. One or more intermediate layers are deposited on a surface of the silicon. The one or more intermediate layers can include strontium, which combines with the silicon to form strontium silicide. Alternatively, the one or more intermediate layers comprise germanium. A layer of amorphous strontium titanate is deposited on the one or more intermediate layers in a transient environment in which oxygen pressure is reduced while temperature is increased. The substrate is then exposed to an oxidizing and annealing atmosphere that oxidizes the one or more intermediate layers and converts the layer of amorphous strontium titanate to crystalline strontium titanate.

The invention relates to the technical field of ceramic capacitors, in particular to an MLCC product and a preparation method thereof. The preparation method of the MLCC product comprises the following steps: carrying out drying treatment on an MLCC ceramic body subjected to chamfering treatment; in an annealing atmosphere containing nitrogen and / or inert gas, the dried MLCC body is subjected to multi-section annealing treatment, and the multi-section annealing treatment comprises a heating section, a heat preservation section and a cooling section which are conducted in sequence; wherein the annealing temperature of the heat preservation section ranges from 700 DEG C to 900 DEG C, and the annealing time of the heat preservation section ranges from 2 h to 5 h; and carrying out end sealing treatment on the MLCC ceramic body subjected to the multi-section annealing treatment. The MLCC product prepared by adopting the preparation method is good in leakage current stability in a high-temperature IR test, the internal stress is obviously reduced, and the MLCC product has higher reliability, stability and service life in long-term work, and can meet the special requirements of the industries of vehicle-mounted electronics, base stations, servers and the like.

This invention belongs to the field of annealing furnace technology, specifically an annealing atmosphere control component, an annealing furnace, and its usage method. Addressing the problems of low gas replacement efficiency, poor sealing, and safety hazards during furnace opening in traditional equipment, the following technical solution is proposed: Liftable furnace doors are provided on both sides of the furnace body, forming a sealed cavity with the trolley; the annealing atmosphere control structure includes a dual-gas box system, with protective gas injected from the furnace bottom via a gas guide pipe, utilizing density differences to form a stable upward airflow; the sealing structure achieves a complete seal between the furnace body, trolley, and furnace door through a combination of annular sealing strips and double-layer bottom sealing strips; the protective structure uses a damping rotating shaft-linked arc-shaped protective plate that automatically unfolds to form a safety barrier when the furnace is opened; this device, through optimized gas flow path, multi-stage sealing design, and combined furnace opening protection, effectively reduces residual oxygen content, prevents gas leakage, and ensures operational safety, making it suitable for high-precision metal annealing.

Provided in the present invention are an annealing device and an annealing method. The annealing device comprises a chamber, a cover, a cover driving mechanism and a gas inlet device, wherein the gas inlet device comprises a chamber gas inlet unit and a cover gas inlet unit. The chamber gas inlet unit is configured to convey a first gas into the chamber, such that the pressure inside the chamber is a first pressure; and the cover gas inlet unit is configured to convey a second gas into the cover. The annealing device is configured as follows: when a hot plate is used to perform a process on a substrate, the cover driving mechanism drives the cover to move towards the substrate and cover the substrate, and then the cover gas inlet unit conveys the second gas into the cover, such that the pressure inside the cover is a second pressure, the second pressure being greater than the first pressure. According to the present invention, for a process where a mixture of nitrogen and hydrogen is required to form an annealing atmosphere, compared with introducing the mixed gas of nitrogen and hydrogen into the whole chamber, simply introducing the mixed gas of nitrogen and hydrogen into the cover greatly reduces the consumption of hydrogen, thereby reducing the process cost and improving the process safety.

The invention discloses a method for improving the quality and consistency of an oriented electrical steel glass film. The method comprises the following steps: controlling the temperature rise rate of decarburization, nitriding and annealing to be 200-400 DEG C / s; the partial pressure ratio P (H2O) / P (H2) of the decarburization nitriding annealing atmosphere is controlled to be 0.20-0.30; the oxygen content of decarburization, nitriding and annealing is controlled to be 500-800 ppm; the hydration rate of the magnesium oxide coating is controlled to be less than 2.0; and in the high-temperature annealing process, in the annealing temperature range of 700-1200 DEG C, the heating rate is controlled to be less than 8 DEG C / h or heat preservation treatment is carried out for more than 15 hours. Through the implementation of the method, the oriented electrical steel product glass film is compact, has no defects such as dot-shaped crystal leakage and the like, meanwhile, the uniformity is good, the quality of the head glass film, the middle glass film and the tail glass film is uniform and consistent in the length direction of the steel coil, the proportion of surface degraded products caused by the defects of the bottom layer of the glass film is reduced to 20% or below from existing 40% or above, and the quality and the uniformity of the glass film are obviously improved.

This invention relates to the field of piezoelectric materials and discloses a method for preparing a potassium sodium niobate thin film. The method involves first synthesizing a ceramic target material from niobium pentoxide, potassium carbonate, and sodium carbonate in a solid phase; then placing the ceramic target material in a magnetron sputtering apparatus for sputtering to form an amorphous thin film; finally, adding the amorphous thin film to an annealing atmosphere in a crucible for annealing to form a potassium sodium niobate thin film. This method uses magnetron sputtering to prepare an amorphous potassium sodium niobate thin film under conditions below the film crystallization temperature, followed by annealing to crystallize the film. During annealing, an alkali metal atmosphere is used to compensate and control the alkali metal elements in the film. This method is still based on magnetron sputtering, which is suitable for large-size thin film growth, offering strong process controllability and high production efficiency. The alkali metal atmosphere compensation allows for control of the alkali metal element composition in the potassium sodium niobate.

The invention relates to a decarburization annealing process for oriented silicon steel, which comprises the following steps: by taking decarburization annealing heating temperature, # imgabs 0 # partial pressure ratio in annealing atmosphere and decarburization annealing time as design parameters, introducing the decarburization annealing heating temperature, # imgabs 1 # partial pressure ratio in the annealing atmosphere and the decarburization annealing time into a decarburization dynamic process; carbon concentrations of all points of the steel plates with different thickness specifications at different time are obtained, so that the optimal matching relation of the decarburization annealing heating temperature, the # imgabs2 # partial pressure ratio in the annealing atmosphere and the decarburization annealing time is obtained when the decarburization requirement is met, and then the optimal value of a third variable is obtained through calculation when any two parameters are fixed; the decarburization annealing heating temperature is 800-860 DEG C, the decarburization annealing time is 40-80 seconds, and the partial pressure ratio # imgabs3 # ranges from 0.25 to 0.50; according to the method, decarburization annealing is accurately controlled, and a basis is provided for designing decarburization annealing process parameters for research and development of new oriented silicon steel varieties.

The present invention belongs to the field of manufacturing high-strength steel for automobiles, and particularly relates to a high-plating-property and high-strength-ductility-product TRIP steel and a manufacturing method thereof. The chemical composition of the TRIP steel includes, by mass percentage, C: 0.16 - 0.24%, Mn: 1.5 - 2.4%, Si: 0.5 - 1.2%, Al: 0.6 - 1.5%, Ti: 0.008 - 0.08%, Cu: 0.05 - 0.3%, Bi: 0.008 - 0.05%, B: 0.001 - 0.003%, P: below 0.015%, S: below 0.002%, and the balance is Fe. The heating temperature of the slab is 1100 - 1250°C, the finish rolling temperature is 20 - 50°C below the A3 line, the coiling temperature is 500 - 600°C, the dew point of the annealing atmosphere is above -30°C, the critical annealing temperature is 780 - 900°C, the critical annealing holding time is 90 - 600 s, the cooling rate is 10 - 50°C / s, the bainite isothermal annealing temperature is 350 - 450°C, and the isothermal annealing holding time is 40 - 600 s. The present invention can greatly improve the surface oxidation problem of the TRIP steel during annealing on the premise of considering mechanical properties, improve the plating property, and improve the process stability.

The invention discloses a MHz-level low-loss Fe-Si-Al magnetic powder core and an infiltration diffusion preparation method thereof, and the method comprises the following steps: (1) powder infiltration: completely immersing Fe-Si-Al alloy powder in a molten tin-based metal material, and taking out the Fe-Si-Al alloy powder after the Fe-Si-Al alloy powder is fully wetted; (2) diffusion annealing: carrying out diffusion annealing on the wetted Fe-Si-Al powder in an annealing atmosphere; (3) compression molding: adding a binder, uniformly stirring, heating and drying, then adding a release agent, uniformly stirring, and pressing into a green body part; and (4) heat treatment is conducted, specifically, the green body piece in the step (3) is annealed and cooled under the protective atmosphere, and the MHz-level low-loss Fe-Si-Al magnetic powder core is obtained. According to the scheme, by means of the metal diffusion solid solution principle, the working frequency of the Fe-Si-Al magnetic powder core material is improved to MHz, and meanwhile the Fe-Si-Al magnetic powder core material has high effective magnetic conductivity and low power loss.

The application discloses an ultrathin oriented silicon steel strip and a preparation method thereof, and belongs to the technical field of ultrathin oriented silicon steel, and overcomes the defects of long preparation process and complex process of the ultrathin oriented silicon steel strip with low loss. The preparation method of the ultrathin oriented silicon steel strip comprises the following steps: step 1, selecting an oriented silicon steel strip with a grain size of 1.0-2.0 cm and an isometricity of 0.8-1.2 as a raw material; step 2, performing two-pass rolling on the raw material to obtain a cold-rolled ultrathin strip; the total reduction of the two-pass rolling is 70%-85%, and the reduction ratio of the first-pass rolling to the second-pass rolling is 7.5:2.5-9.0:1.0; and step 3, annealing the cold-rolled ultrathin strip; the annealing temperature is 800-880 DEG C, the annealing time is 5-20 min, the annealing atmosphere is high-purity hydrogen, the unit cross-sectional area front tension is 0.15-0.5 kg / mm 2 , and the unit cross-sectional area back tension is 0.15-0.3 kg / mm 2 . The preparation method has a simple process flow, and the prepared ultrathin oriented silicon steel strip has low medium-frequency loss, high magnetic induction and low magnetostriction noise.

The application provides a Nb micro-alloyed oriented silicon steel decarburization annealing oxidation layer structure regulation method, and relates to the technical field of oriented silicon steel decarburization annealing. The Nb micro-alloyed oriented silicon steel decarburization annealing oxidation layer structure regulation method comprises the following steps: S1, selecting oriented silicon steel with a Si element mass fraction of 3.0% as a base material, adding Nb element to the base material for micro-alloying treatment, and preparing Nb micro-alloyed oriented silicon steel; S3, placing the Nb micro-alloyed oriented silicon steel prepared in S1 in the decarburization annealing atmosphere prepared in S2 for decarburization annealing treatment, and precisely regulating the thickness of the oxidation layer and the content ratio of spherical oxides to strip-shaped oxides in the oxidation layer after decarburization annealing of the oriented silicon steel by regulating the Nb element addition amount, the decarburization annealing temperature and the holding time. The regulation law of Nb and process parameters on the oxidation layer is clear, the oxidation layer structure is precisely controllable, and the process standardization is supported.

The invention relates to the technical field of crystal material processing, in particular to an annealing method for improving the performance of a large-size crystal material, which takes a zirconium oxide-isomorphic source polycrystalline material composite landfill material as an annealing medium and a CO-CO2-Ar mixed gas as an annealing atmosphere. Wherein the thermal buffer provided by the isomorphic source polycrystal material can realize the smooth transition of the temperature gradient and reduce the heat flux density; the zirconium oxide material is low in thermal conductivity, a thermal resistance layer can be formed, and microcracks caused by rapid thermal shock are reduced. Dynamic balance of oxygen partial pressure can be achieved through reversible conversion of CO-CO2 in the mixed gas, reaction gas is further diluted through Ar, and decomposition of aluminum oxide and formation of oxygen vacancies are effectively inhibited. The method effectively solves the problem of uneven heating caused by large temperature gradient during annealing of a large-size crystal material in the prior art, further improves the thermal shock resistance of the material, reduces microdefects, improves the crystal transmittance and eliminates stress.

The invention discloses an in-situ germanium concentration method based on high-density strong-bond-energy oxide / GeOx / SiGe stacking and application of the in-situ germanium concentration method, and belongs to the field of semiconductors and integrated circuits. According to the method, on the basis of an in-situ germanium concentration method based on GeOx / SiGe stacking, a high-density strong-bond-energy oxide layer represented by AlOx is additionally arranged above a GeOx layer, and a high-density strong-bond-energy oxide / GeOx / SiGe three-layer stacking structure is formed. The high-density strong-bond-energy oxide layer inhibits GeO analysis and blocks external oxygen invasion, so that the annealing atmosphere does not need to be strictly oxygen-free, and the germanium atom percentage increment is more than two times of that of the layer. According to the method, the process compatibility is expanded, the germanium concentration efficiency is improved, and the method is suitable for mass production scenes of high-node devices such as 3D FinFET fins and nanosheets.

The application discloses a kind of DP780 dual-phase steel segmented dew point regulation annealing process, including heating section, isothermal section and cooling section;The heating section: the dual-phase steel steel strip is heated to 710~730 first, in this process, the dew point of annealing atmosphere is at-20~-15, while maintaining hydrogen volume fraction at 10~15%;Heated to 810~830 again, in this process, the dew point of annealing atmosphere is reduced to-60~-55, while keeping hydrogen volume fraction in the range of 10~15%;The isothermal section: keep warm at 820 DEG C temperature, during maintaining the dew point of annealing atmosphere at-50~-45;The cooling section: cooling to 450~470, in this process, the dew point of annealing atmosphere is kept at-30~-25.The process will significantly reduce the surface coverage of outer oxide to 5% or less, the plating rate is reduced to 3% or less, while ensuring that the tensile strength of dual-phase steel is not less than 780MPa and elongation is not less than 19%, mechanical properties and coating quality of high level are realized.

The application discloses a production method for improving the longitudinal magnetic property uniformity of low-temperature high-magnetic-induction oriented silicon steel coils, and the method comprises the following steps: after converter smelting, the molten steel is treated by RH refining and then is poured into a slab by protective casting; the slab is heated and then is hot-rolled; the heating temperature is 1120-1250 DEG C, the temperature after finish rolling is greater than or equal to 920 DEG C, and the hot-rolled plate is rapidly water-cooled to below 600 DEG C after finish rolling; after the hot-rolled plate is normally normalized by a conventional two-stage normalizing method, the hot-rolled plate is once cold-rolled to a target thickness, then is subjected to decarburization annealing and nitriding treatment; after nitriding, the steel coil is coated with magnesium oxide release agent and is subjected to high-temperature annealing in an annular furnace; after high-temperature annealing, the steel coil is subjected to hot stretching and flattening and is coated with an insulating coating, and the iron loss of the steel coil is detected on line at the outlet side; the steel coil is subjected to laser marking or is directly sent to a product cutting and packaging device; and the longitudinal magnetic property uniformity of the steel coil is significantly improved by strictly controlling the temperature after the finish rolling machine, the heating speed during the decarburization annealing process and the total amount of nitriding, and simultaneously matching a suitable high-temperature annealing atmosphere protection system, and the longitudinal magnetic property difference is controlled to be within 3%.

The invention relates to a method for manufacturing a sheet metal component wherein a) a flat steel product is provided made of a steel which (by weight) consists of 0.05 - 0.5% C, 0.5 - 3% Mn, 0.06 - 1.7% Si, 0.06% P, 0.01% S, 1.0% Al, 0.15% Ti, 0.6% Nb, 0.01% B, 1.0% Cr, 1.0% Mo, the total contents of Cr and Mo being 1.0%, 0.2% Ca, 0.1% V, the remainder being iron and impurities; b) the flat steel product is annealed in a continuous furnace with four zones A, B, C, D under an annealing atmosphere composed of 0.1 - 15% hydrogen and nitrogen with a dew point temperature TP and an annealing temperature GT, the following being applicable: Zone A TP: -10 - -25°C, GT: 800 - 950°C, Zone B TP: -27 - -41°C, GT: 800 - 930°C, Zone C TP: -30 - -80°C, GT: 800 - 950°C, Zone D: TP: -30 - -20°C, GT: 750 - 950°C; c) a corrosion protection coating composed of (by weight) < 15% Si, = 5% Fe, in total 0.1 - 5% of at least one alkaline earth or transition metal and as a remainder of Al and unavoidable impurities is applied to the flat steel product; optionally d) the flat steel product is rolled and e) a plate is separated from said flat steel product; f) the flat steel product is heated to a temperature >Ac3 of the flat steel product and = 1000°C for a holding time sufficient to introduce an amount of thermal energy Js > 100,000 - 800.000 kJs; g) the flat steel product is hot-formed into the sheet metal component; and h) at least one section of the component is cooled at a cooling rate sufficient to generate hardening structures. The invention also provides a component in which optimal adhesion of the corrosion protection layer to the steel substrate is ensured.

To provide a method forming a sheet metal component from a flat steel product having optimal conditions for a coating with an organic coat, in particular for painting by satisfying the highest requirements for their weldability.SOLUTION: The method includes a) providing a flat steel product made of steel, b) annealing the flat steel product with a specified dew point temperature and annealing temperature under an annealing atmosphere comprising 0.1 to 15% hydrogen and nitrogen in a continuous furnace with four zones A, B, C, D, c) adhering a corrosion protective coating to the obtained flat steel product, f) heating the flat steel product to a hot forming temperature larger than a steel Ac3 temperature of the flat steel product and not exceeding 1000°C, g) hot-forming the flat steel product heated to a hot forming temperature and making a sheet metal component, and h) cooling at least one part of the component at cooling rate enough to generate hardening structure at the part of the sheet metal component.SELECTED DRAWING: None

The invention relates to a method for producing a semiconductor device, comprising the following steps: providing a semiconductor body (1) of SiC having a top side (10); producing a silicon-containing interface layer (Fig. 1) directly on the top side (10), the interface layer (22) having a thickness of at most 5 nm; -applying a nitride-based dielectric layer (2) directly on the silicon-containing interface layer, the dielectric layer (2) being applied at a thickness of at least 5 nm; -annealing the dielectric layer (2) in an annealing atmosphere comprising hydrogen at a temperature of at least 1050 DEG C such that hydrogen atoms at the nitrogen vacancies are incorporated into the nitride-based dielectric substance (2); and applying an electrically conductive layer (3 Fig. 6) on the annealed dielectric layer (2).

This invention belongs to the field of functional materials and gas sensing, specifically disclosing a method for preparing a bismuth ferrite gas sensor and its application. The method employs gradient annealing, placing the bismuth ferrite sample in a series of atmospheres with continuously increasing oxygen partial pressures, ranging from zero oxygen partial pressure to 100% oxygen partial pressure. The oxygen vacancy concentration, ferroelectric domain order, and gas-sensing performance of the sample after annealing are measured, establishing a correlation between oxygen partial pressure, oxygen vacancy concentration, ferroelectric domain order, and gas-sensing performance, thereby improving the gas-sensing properties of the material. This invention also provides the application of this method in the preparation of bismuth ferrite gas sensors. The above method can maximize the sensor's sensitivity.

A method for manufacturing contact structures (2) in particular for a solar cell (1) is described, which includes at least the following process steps: (a) Providing a silicon substrate (3) with first and second sub-areas (7, 17) each on a rear side (9) of the silicon substrate; (b) Forming a backside layer stack (19) covering the first and second sub-areas, the backside layer stack comprising a silicon oxide-containing backside passivation layer (21) and a doped polycrystalline silicon layer (23); (c) Performing an anneal step by introducing the silicon substrate into an anneal atmosphere at temperatures above 700°C, with oxygen being added to the anneal atmosphere at least temporarily, so that a silicon oxide thin film (25) forms adjacent to the polycrystalline silicon layer; (d) Removal of the silicon oxide thin layer by laser ablation in the first sub-areas; and (e) Performing a selective etching step by introducing the silicon substrate into a highly selective etching substance and thereby removing the polycrystalline silicon layer in the first sub-areas. As an alternative to process steps (c) and (d), the polycrystalline silicon layer can also be locally selectively oxidized in the second sub-areas by irradiating the silicon substrate, which is absorbed in an oxygen-containing atmosphere, with laser light in order to locally form the silicon oxide thin film there by laser oxidation. Furthermore, a method for manufacturing a solar cell (1) as a back-contact solar cell is described, in which the first-mentioned method for manufacturing contact structures (2) is used.

The application provides a SiC substrate and an interface state improvement method thereof, and the interface state improvement method comprises the following steps: performing vapor phase cleaning on the surface of the SiC substrate by using dichloroethylene in an oxygen-containing atmosphere; performing first annealing on the cleaned SiC substrate in a mixed atmosphere of N2 and N2O; performing oxidation treatment on the surface of the SiC substrate after the annealing treatment, so as to form a silicon oxide layer; performing second annealing on the SiC substrate after the oxidation treatment in a mixed atmosphere of N2 and N2O; and the volume ratio of N2O to N2 in the second annealing atmosphere is greater than the volume ratio of N2O to N2 in the first annealing atmosphere. By gradient design and synergistic optimization of the gas partial pressure and temperature of the annealing process before and after the oxidation, gradient and controllable doping of nitrogen atoms are realized, and then accurate control from "surface pre-passivation" to "interface depth modification" is realized, so that the interface quality of the gate oxide layer is more effectively improved, and the SiC / SiO2 interface state density is obviously reduced.

A non-oriented electrical steel sheet having a high magnetic flux density and a low iron loss at a high frequency is produced by subjecting a slab containing, in mass %, C: not more than 0.0050%, Si: 2.8 to 6.5%, Mn: 0.05 to 2.0%, P: not more than 0.10%, S: not more than 0.0050%, Al: 0.3 to 2.0%, N: not more than 0.0050% and Zn: 0.0005 to 0.0050% to a hot rolling, a hot-band annealing, a cold rolling and a finish annealing, a dew point in the hot-band annealing is set to 0 to 70° C. and an atmosphere of the finish annealing has a nitrogen content of not more than 30 vol % and a dew point of not higher than −20° C., and a ratio of the amount of nitrogen present as AlN in an entire sheet thickness to the amount of nitrogen present as AlN in a layer from one-side surface of steel sheet to a depth of 1 / 20 of sheet thickness is made to not less than 5.0.

The invention relates to the technical field of semiconductor material preparation, in particular to a preparation method of a p-type beta-Ga2O3 single crystal thin film, which utilizes pulsed laser deposition to prepare a gallium oxide thin film in a high oxygen pressure atmosphere, realizes great reduction of oxygen vacancy defect concentration in gallium oxide, reduces n-type carrier concentration increase caused by oxygen vacancy, and improves the yield of the gallium oxide thin film. The method has the advantages that the gallium oxide is doped with the nitrogen element, so that the p-type doping is difficult, the nitrogen element is guided to replace oxygen ions in gallium oxide crystal lattices under the action of the annealing atmosphere, the p-type conductive characteristic is formed, the hole concentration of the gallium oxide thin film is improved, and finally the high-quality beta-Ga2O3 thin film which is controllable in size and thickness and has p-type conductivity is obtained. By controlling the annealing time, the hole mobility of the thin film can reach up to 18 cm / V.s, and the hole concentration can reach up to 5.0 * 10 < 16 > / cm. The method is simple in process, low in manufacturing cost and suitable for industrial large-scale production, and important technical support is provided for research and development of high-performance power devices and deep ultraviolet detectors.

The invention relates to a preparation method of a composite substrate and the composite substrate, and the method comprises the steps: providing a first wafer and a second wafer, the substrates of the first wafer and the second wafer are semiconductor materials, and a buried oxide layer is formed on the second wafer; bonding the first wafer and the second wafer to form a bonded wafer; carrying out annealing treatment on the bonded wafer in the process chamber in an annealing atmosphere; the annealing treatment comprises a heating treatment stage, an annealing stage and a cooling treatment stage; in the heating treatment stage, the internal temperature of the process chamber is increased to a preset annealing temperature from an initial temperature; in the annealing stage, the internal temperature is kept at a preset annealing temperature for a preset annealing duration; in the cooling treatment stage, the internal temperature is reduced to the cooling temperature from the preset annealing temperature; the annealing atmosphere comprises oxygen during at least part of the time period of the annealing treatment, so that an oxidized filler is formed between the first wafer and the second wafer. Therefore, the edge breadth uniformity of the composite substrate is effectively improved.

The invention provides a method for reducing chromatic aberration of a cold rolled steel coil after bell-type furnace annealing, which specifically comprises the following steps after emergency purging of a bell-type furnace: (1) adjusting an annealing heating program of the bell-type furnace to an initial stage according to annealing process requirements, when the temperature in the bell-type furnace is reduced to 400-300 DEG C, a heating cover of the bell-type furnace is buckled on the cold-rolled steel coil, and an annealing heating program of the bell-type furnace is started; (2) the temperature in the bell-type furnace is controlled to be increased to 450-550 DEG C, the heating time is 1.5-2.5 h, after heat preservation is conducted for 1.5-2.5 h, 20 m < 3 > / h-30 m < 3 > / h of hydrogen is blown into the bell-type furnace for 3-4 h, and the annealing atmosphere in the bell-type furnace is converted into the hydrogen atmosphere; and (3) after the annealing heating procedure is completed, starting the cooling procedure of the bell-type furnace and moving away the heating cover, so that the cold-rolled steel coil is naturally cooled. According to the technical scheme, color difference after annealing can be prevented, and repair is prevented.

The application discloses a MHz-level low-loss FeSiAl magnetic powder core and a sintering diffusion preparation method thereof, and comprises the following steps: (1) powder immersion: completely immerse FeSiAl alloy powder in molten Sn-based metal material, and take out after sufficient wetting; (2) diffusion annealing: perform diffusion annealing on the wet FeSiAl powder in an annealing atmosphere; (3) pressing forming: add a binder, uniformly stir, heat and dry, then add a release agent, uniformly stir, and then press into a green part; (4) heat treatment: perform annealing on the green part in the step (3) in a protective atmosphere, and cool to obtain the MHz-level low-loss FeSiAl magnetic powder core. According to the scheme, the working frequency of the FeSiAl magnetic powder core material is increased to MHz, and meanwhile, the effective permeability is relatively high and the power loss is relatively low.

The invention provides an annealing apparatus and an annealing method. Comprising a cavity; a cover body; a cover body driving mechanism; the air inlet device comprises a cavity air inlet unit and a cover air inlet unit. The cavity gas inlet unit is configured to convey first gas into the cavity, so that the pressure intensity in the cavity is first pressure intensity, and the cover gas inlet unit is configured to convey second gas into the cover. The annealing device is configured in the mode that when the hot plate conducts the process on the substrate, the cover body driving mechanism drives the cover body to move towards the substrate and cover the substrate, then the cover body gas inlet unit conveys second gas into the cover body, the pressure intensity of the inner space of the cover body is second pressure intensity, and the second pressure intensity is larger than the first pressure intensity. For the process that nitrogen and hydrogen need to be mixed in the annealing atmosphere, only the mixed gas of the nitrogen and the hydrogen needs to be introduced into the cover body, and compared with the process that the mixed gas of the nitrogen and the hydrogen needs to be introduced into the whole cavity, the use amount of the hydrogen is greatly reduced, the process cost is reduced, and the process safety is improved.

The invention relates to a method for producing contact structures (2), in particular for a solar cell (1), comprising at least the following method steps: (a) providing a silicon substrate (3) having first and second subregions (7, 17), in each case on a back side (9) of the silicon substrate; (b) creating a back-side layer stack (19) covering the first and second subregions, the back-side layer stack having a silicon oxide-containing back-side passivation layer (21) and a doped polycrystalline silicon layer (23); (c) carrying out an annealing step by introducing the silicon substrate into an annealing atmosphere at temperatures above 700°C, oxygen being added to the annealing atmosphere at least temporarily such that a thin silicon oxide layer (25) is formed adjacent to the polycrystalline silicon layer; (d) removing the thin silicon oxide layer by laser ablation in the first subregions; and (e) carrying out a selective etching step by introducing the silicon substrate into a highly selective etching substance and thereby removing the polycrystalline silicon layer in the first subregions. As an alternative to method steps (c) and (d), the polycrystalline silicon layer can also be locally selectively oxidized in the second subregions by irradiating the silicon substrate accommodated in an oxygen-containing atmosphere with laser light in order locally to form the thin silicon oxide layer there by laser oxidation. The invention further relates to a method for producing a solar cell (1) as a back-contact solar cell, wherein the first-mentioned method is used to produce contact structures (2).

The invention relates to the technical field of semiconductor material preparation, in particular to an annealing process of a p-type beta-Ga2O3 single crystal thin film, which accurately regulates lattice defects of a gallium oxide thin film and inhibits formation of oxygen vacancies through a multi-stage atmosphere regulation and temperature gradient optimization technology. Under the action of the annealing atmosphere, non-metallic elements are guided to replace oxygen elements in gallium oxide crystal lattices, p-type conductive characteristics are formed, the hole concentration and the crystal quality of the gallium oxide thin film are improved, and finally the high-quality p-type beta-Ga2O3 single crystal thin film which is controllable in size and thickness and remarkable in Hall effect is obtained. By controlling the annealing time, the hole mobility of the thin film can reach up to 18 cm / V.s, the hole concentration can reach up to 5.0 * 10 < 16 > cm <->, and a solid foundation is laid for practical application of next-generation power devices and deep ultraviolet light detectors.