48 results about "Segregation effect" patented technology

Methods and related systems are described relating to an inversion approach for interpreting the geophysical electromagnetic data. The inversion can be constrained by using a multiphase fluid flow simulator (incorporating pressure data if available) which simulates the fluid flow process and calculates the spatial distribution of the water saturation and the salt concentration, which are in turn transformed into the formation conductivity using a resistivity-saturation formula. In this way, the inverted invasion profile is consistent with the fluid flow physics and moreover accounts for gravity segregation effects. Jointly with the pressure data, the inversion estimates a parametric one-dimensional distribution of permeability and porosity. The fluid flow volume is directly inverted from the fluid-flow-constrained inversion of the electromagnetic data.

The invention belongs to the technical field of polysilicon purification with a physical metallurgy technology and particularly relates to a method for coupling and purifying polysilicon and removing phosphorus and metal with electron beams. The method comprises the following steps of: forming a stable melting pool on the top of a low-phosphorous low-metal high-purity silicon ingot with the electron beams; putting silicon powder to be purified into the melting pool and melting to realize the rapid melting of the powder body to remove volatile phosphorous impurity in the silicon powder; simultaneously carrying out directional ingot pulling so that the low-phosphorus polysilicon grows in a directional solidification way; and removing metal impurities in the polysilicon by utilizing a segregation effect. The invention has the remarkable effects that: because ways of melting silicon powder with the electron beams and carrying out directional solidification are simultaneously adopted, the phosphorus impurity is rapidly removed with the electron beams, and the metal impurities with lower segregation coefficient are removed by the directional solidification way, the purity of the polysilicon is effectively improved, and the using requirement of solar grade silicon is achieved. The invention has the advantages of good purification effect, stable technology, simple process, high production efficiency, energy saving, low cost and suitability for batch production.

The invention relates to a technology for centrifugal casting of a high-nitrogen austenitic stainless steel pipe at normal pressure. The technology includes the steps of preparing ingredients, preparing a casting mold and a casting machine, conducting alloy smelting and pouring, carrying out shaping cleaning and heat treatment, recording and checking. The cast pipe is made of high-nitrogen austenitic stainless steel, the nitrogen content of the alloy melt or oversaturated alloy in the solidification process is larger than or equal to 0.65% N at the normal pressure, spontaneous gas can be generated in the normal-pressure casting process, and nitrogen bubbles overflow. Under the normal-pressure smelting condition, high-nitrogen-content austenitic stainless steel molten metal obtained by smelting meets the pouring temperature condition, and then enters in the pouring step rapidly in 90 seconds, and centrifugal casting of all the smelting molten metal is completed in three minutes. The auxiliary segregation effect of centrifugal force is utilized, and the overflowing nitrogen bubbles deviate from the quality specification portion of the cast pipe. By the adoption of the technology, the nitrogen content, the bubble positions and the bubble number can be controlled stably and effectively, and thus the surface and overall quality requirement can be met.

This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

A bed of particulate solids is fluidized in a test chamber to yield multiple test samples for subsequent evaluation of segregation effects. A controlled stream of gas enters the chamber in a series of flow rate cycles each progressively increasing to a maximum rate of gas flow and then decreasing, the maximum rate increasing for successive cycles. An indicating function is formed from measurements of corresponding rates of gas flow and pressure across the bed. Upon termination of the fluidization, multiple samples are sequentially extracted from a single space at the bottom of the test chamber.