The invention provides a phase change storage unit and a preparing method of the phase change storage unit. A phase change material layer with the thickness identical to the size of a single unit cell or a plurality of unit cells is adopted, interfacial characteristics are fundamentally expressed by the phase change material layer, volume material characteristics are weakened, so that the two-dimensional phase change storage unit which stores information through interface resistance change is prepared, and the two-dimensional phase change storage unit is high in density, low in power consumption and high in speed. The phase change material layer is thin and a small number of shortages exist on an interface of the phase change material layer, so that the operation power consumption of the phase change storage unit is reduced, and the operation time of the phase change storage unit is shortened, damage to a phase change material in every operation process is reduced, the element segregation effect of the material in every operation process is decreased, the maximum operability number of times of the phase change storage unit is increased, and therefore the capacity of circulating operation number of times of a device can be increased. Further, a graphene electrode used in the phase change storage unit has the advantages of being fast in signal response, large in mechanical strength, small in energy loss and the like. Meanwhile, the phase change storage unit is compatible with a novel CMOS.