Shallow groove segregation structure and forming method thereof

Abstract

The invention relates to a shallow groove segregation structure and a forming method of the shallow groove segregation structure. The method comprises the steps that a semiconductor substrate is provided, and a liner oxide layer and a hard mask layer are sequentially formed on the surface of the semiconductor substrate; part of the hard mask layer and part of the liner oxide layer are removed to expose the surface of the semiconductor substrate, the remnant hard mask layer and the remnant liner oxide layer serve as a mask, and a plurality of openings are formed in the semiconductor substrate; a liner layer is formed on the side walls of the openings and the bottoms of the openings and made from silicon doping with carbon or silicon doping with germanium or silicon doping with carbon and germanium; an insulating layer flush with the surface of the hard mask layer is formed on the surface of the liner layer; the hard mask layer, the liner oxide layer and the insulating layer higher than the surface of the semiconductor substrate are removed. According to the forming method of the shallow groove segregation structure, the segregation effect of the shallow groove segregation structure is improved. Furthermore, when a semiconductor device is formed on the surface of the semiconductor substrate segregated by the shallow groove segregation structure, the working performance of the semiconductor device is stable.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a shallow trench isolation structure and a forming method thereof. Background technique [0002] The development direction of semiconductor integrated circuits is to increase density and shrink components. In the integrated circuit manufacturing technology, the isolation structure is an important technology, and the components formed on the semiconductor substrate adopt the isolation structure to isolate each other. With the advancement of semiconductor manufacturing technology, shallow trench isolation (Shallow Trench Isolation, STI) technology has gradually replaced the traditional semiconductor device manufacturing technology due to its good isolation effect and simple manufacturing process, such as local silicon oxidation process (LOCOS) Commonly used isolation structures formed by other processes. [0003] Such as Figure 1 to Figure 5 Shown is a schema...

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Problems solved by technology

[0010] However, the isolation effect of the shallow trench isolation structure formed in the prior art is poor, resulting in unstable performance of semiconductor devices isolated by the shallow trench isolation structure

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