212 results about "Silicon oxidation" patented technology

The application provides a negative electrode material and a preparation method thereof and a secondary battery, and relates to the technical field of battery materials. The negative electrode material comprises a silicon-based inner core and a carbon layer coated on the surface of the silicon-based inner core, wherein the silicon-based inner core comprises nanosilicon and a silicate containing a metal element M; the negative electrode material is subjected to section analysis and energy spectrum analysis, and meets the conditions of k1<=10, k2<=5 and 0.1 The preparation method of the negative electrode material comprises the following steps: heating and evaporating pre-disproportionated silicon monoxide material and M metal source material to obtain silicon monoxide gas and metal source gas; mixing and condensing the two kinds of gas to obtain an inner core material; and performing carbon coating treatment to obtain the negative electrode material. In the negative electrode material prepared by the application, the metal silicate effectively separates the nanosilicon domain and the silicon oxide domain, and is uniformly distributed, and the negative electrode material has high initial efficiency and excellent cycle performance.

The invention provides an MEMS component and a vibration cavity structure and a liquid ejection head thereof, the MEMS component comprises a piezoelectric actuator structure, and the vibration cavity structure is in contact with the piezoelectric actuator structure; the vibration cavity structure comprises a vibration cavity and a cavity wall, and the inner side wall of the cavity wall is arc-shaped; the vibration cavity structure is made of silicon and / or silicon oxide. The cavity wall of the vibration cavity structure disclosed by the invention adopts the design of the arc-shaped inner side wall, so that the deformation volume of the vibration cavity is increased on the premise that the density of the spray holes of the liquid spray head is not changed, and the size of liquid drops is effectively increased; and meanwhile, the liquid ejection head can realize ejection of liquid drops with the same size by using relatively small driving voltage, so that the energy consumption is reduced.

The invention discloses a method for recovering high-purity fluorine and silicon from fluorine-silicon slag and co-producing a low-alkali fluorine-free accelerator, which comprises the following steps: S1, dissolving the fluorine-silicon slag in a sodium hydroxide solution to obtain a solution A; s2, adding dilute sulphuric acid into the solution A, reacting until gel is obtained, and filtering to obtain filtrate A and high-purity silicon dioxide gel; s3, adding calcium sulfate and EDTA (Ethylene Diamine Tetraacetic Acid) into the filtrate A, stirring and reacting, and filtering after the reaction is finished to obtain calcium fluoride and filtrate B; and S4, taking clear water, heating, carrying out heat preservation, then adding aluminum sulfate, lithium sulfate, diethanol amine and the filtrate B obtained in S3, continuously stirring until the aluminum sulfate is completely dissolved, then adding hydrated magnesium silicate, continuously carrying out heat preservation stirring, and obtaining the low-alkali fluorine-free accelerator after stirring is finished. The method is simple in process and easy to implement industrially, and fluoride and silicon oxide obtained through separation are high in purity and beneficial to follow-up extension application; more importantly, high-value recycling of the fluorosilicon slag is achieved, and the problems of stockpiling waste and environmental pollution of the fluorosilicon slag are solved.

The application relates to the technical field of lithium ion battery materials, and discloses a low-expansion silicon-carbon material and a preparation method thereof. The low-expansion silicon-carbon material has a porous core-shell structure, the inner core is graphene / metal-doped amorphous carbon-coated nano silicon, and the shell is boron-doped amorphous carbon. The preparation method comprises the following steps: firstly, a silicon oxide compound, a graphene oxide solution and an organic metal polymer are added into an organic carbon source solution, spray drying is carried out, and an oxidized graphene-coated metal-doped silicon oxide precursor material is obtained through reaction; secondly, a mixed gas of a boron source gas and argon is introduced into the oxidized graphene-coated metal-doped silicon oxide precursor material, and a boron-doped silicon-carbon composite material is obtained through reaction; and thirdly, the boron-doped silicon-carbon composite material is soaked in a hydrofluoric acid solution, and the low-expansion silicon-carbon material is obtained after drying. Through the technical scheme, the problems of high expansion and poor rate performance of the silicon-carbon material in the related art are solved.

An oxide film etching method includes: forming a protective film of a metal or a metal nitride that does not contain silicon so as to cover a protection target film, among the protection target film containing silicon and a silicon-containing oxide film exposed on a surface of a substrate; supplying, to the substrate, a mixed gas including a hydrogen fluoride gas and an ammonia gas to react with the silicon-containing oxide film, and modifying the oxide film to generate a reaction product; and sublimating and removing the reaction product.

Exemplary semiconductor processing methods may include providing a catalyst precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include a silicon-and-oxygen-containing material and one or more silicon-containing materials. The methods may include contacting the substrate with the catalyst precursor. The contacting may adsorb the catalyst precursor on the silicon-and-oxygen-containing material and / or the one or more silicon-containing materials. The methods may include providing an etchant precursor to the processing region. The methods may include contacting the substrate with the etchant precursor. The contacting may selectively remove the silicon-and-oxygen-containing material.

The invention relates to the technical field of lithium ion battery manufacturing, and discloses a preparation method of a silicon-containing silicon oxide-phenolic resin-artificial graphite composite negative electrode material, which comprises the following steps: grafting phytic acid on the surface of silicon-containing silicon oxide to construct a protonated acidic site, mixing modified silicon-containing silicon oxide, phenolic resin and artificial graphite, and keeping at a constant temperature to obtain the silicon-containing silicon oxide-phenolic resin-artificial graphite composite negative electrode material. Preferentially carrying out pre-polycondensation by utilizing phytic acid catalysis interface resin to form a gel layer, and rapidly removing a solvent to obtain a precursor; according to the preparation method disclosed by the invention, interface chemical anchoring is established before solvent volatilization by utilizing a dynamic competitive mechanism, so that the problem of stripping of resin and active particles caused by solvent volatilization in a traditional process is solved, and the structural stability and the electric conduction continuity of the material in a battery circulation process are improved.

An electrode for a lithium metal battery according to an embodiment of the present invention comprises a lithium metal storage layer containing silicon oxide particles. The silicon oxide particles have a porous structure, and the molar ratio of oxygen to silicon contained in the silicon oxide particles is 1.5 or more and less than 2.0. A lithium metal battery according to an embodiment of the present invention includes an electrode for a lithium metal battery according to the above embodiment.

A method for exfoliating three-dimensional nanomaterials based on carbon nanotube growth is disclosed. A catalyst is loaded onto the surface of a three-dimensional nanomaterial composed of two-dimensional nanosheets. Energy, a carbon source, H2, and Ar are provided to the three-dimensional nanomaterial in a reactor to exfoliate the two-dimensional nanosheets by growing CNTs. The three-dimensional nanomaterial is composed of at least one combination of two-dimensional nanosheets, including nanoflowers and nanolayers. The two-dimensional nanosheets include at least one of alumina, silicon oxide, and magnesium oxide. The three-dimensional nanomaterial is obtained through hydrothermal or solvothermal chemical reactions. The energy is provided by indirect heating of the substrate, which is achieved by directly heating the reactor through thermal radiation or convection to generate heat in the substrate. This invention solves the problem of the difficulty in exfoliating three-dimensional nanomaterials.

The application discloses a method for precisely modulating microstructure of a silicon-rich silicon oxide film and a product prepared by the method. x The method comprises the following step S20: in-situ heating SiO x Film samples, and the electron beam generated by the transmission electron microscope is irradiated on the SiO x Film samples, so as to realize the thermal annealing treatment of the SiO x Film. The method promotes the process of decomposing the SiO x Film into nanometer silicon crystals and silicon dioxide by means of heating combined with electron beam irradiation, the processing area can be precisely controlled to the nanometer level, rapid thermal annealing is realized, and damage caused by the thermal annealing to the SiO

This invention discloses a method for controlling the thermal relaxation path of superconducting nanostructures and its application. This method utilizes a van der Waals integration strategy to sequentially fabricate a molybdenum disulfide layer on a silicon / silicon oxide substrate using chemical solution deposition and a niobium nitride superconducting layer using magnetron sputtering, constructing a niobium nitride / molybdenum disulfide heterostructure with intrinsic anisotropic thermal conductivity. Superconducting nanodevices with specific geometric configurations are designed for this heterostructure. Leveraging the ultra-high in-plane thermal conductivity of molybdenum disulfide and its suppressed out-of-plane heat transfer characteristics, the method achieves directional control of the internal thermal relaxation path of the superconducting nanostructure, verifying its dual advantages of optimizing thermal management and enhancing superconducting performance. The control method of this invention is mature and controllable, effectively transforming disordered thermal relaxation into directional heat transfer, significantly improving the thermal stability and integration density of superconducting devices, and providing a core solution for the thermal management of nanocircuits in fields such as superconducting quantum computing and high-sensitivity quantum detection.

The invention belongs to the technical field of secondary batteries, particularly relates to a silicon-oxygen-carbon composite negative electrode active material, and further discloses a preparation method of the silicon-oxygen-carbon composite negative electrode active material and application of the silicon-oxygen-carbon composite negative electrode active material to preparation of a battery negative electrode plate and a secondary battery. The silicon-oxygen-carbon composite negative electrode active material comprises a silicon oxide SiOx inner core and a carbon coating layer coating the surface of the silicon oxide SiOx inner core, conductive carbon is dispersed in the silicon oxide SiOx inner core, and a microporous structure is formed in the carbon coating layer. According to the silicon-oxygen-carbon composite negative electrode active material, the conductive carbon is dispersed and mixed in the silicon oxide SiOx particles, the conductive connection effect on the silicon particles is obvious, the defect that the internal conductivity of a silicon-based material is poor is effectively overcome, and the conductivity and expansion performance of the silicon-oxygen-carbon composite negative electrode active material are improved.

The present invention provides a powder that has high reaction efficiency and can maintain that reaction efficiency even after repeated oxidation-reduction reactions. The powder comprises iron oxide particles and oxide particles, wherein the oxide particles contain at least one of Cr and Si as an oxide, the average particle diameter of the oxide particles is 0.5 nm or more and 100 nm or less, the average value of the ratio Fmax / Fmin (the ratio of the maximum Ferret diameter Fmax to the minimum Ferret diameter Fmin) of the oxide particles is 2.0 or more, and the oxide particles are in contact with the iron oxide particles at an average contact rate of 20% or more and 80% or less.

The invention belongs to the technical field of aluminum smelting solid hazardous waste recycling, and particularly relates to a recycling method of aluminum oxide-rich complex electrolyte hazardous waste. According to the method, the complex aluminum electrolyte hazardous waste, aluminum salt and silicon-containing oxide are mixed and then subjected to segmented roasting-leaching treatment, fluorine in the electrolyte is converted into aluminum fluoride firstly and then converted into silicon tetrafluoride gas, separation of fluorine and aluminum and separation of gas and solid are achieved, and sodium and lithium elements are converted into soluble salt and further separated and recycled. According to the process, collaborative recovery and high-value utilization of various valuable elements in the complex aluminum electrolyte hazardous waste are achieved. The whole technological process is environment-friendly, toxic and harmful gas emission is avoided, secondary solid waste residues are not generated, the method has the advantages of being simple in process, high in recovery rate, high in product additional value and the like, and a feasible technical scheme is provided for resource utilization of the aluminum electrolysis solid waste.

The invention discloses a low-warping-degree thin film solar cell manufacturing method, and aims to solve the warping problem caused by mismatching of material intrinsic stress and thermal expansion coefficient in cell preparation. According to the technical scheme, when an epitaxial wafer is preprocessed, an Au contact layer, a compressive / tensile stress metal alternating film layer and an Au bonding layer are sequentially evaporated; when the thin film supporting substrate is pretreated, a Cr-Ti-Pt-Au bonding layer is evaporated on one side, a silicon nitride, silicon oxide or aluminum oxide warping adjustment layer is prepared on the other side, and photoetching trepanning and evaporation of a back contact electrode are required to be performed on the warping adjustment layer for an electrode structure on the different side; and after contraposition permanent bonding, a finished product is obtained through temporary bonding, substrate removal, photoetching coating, antireflection film evaporation and alloy treatment. Internal and external stress is offset through the double-layer warping adjusting structure, the same-side electrode structure and the different-side electrode structure are adapted, the process is mature and easy to popularize, the warping degree of the battery is effectively reduced, and the product yield and the use reliability are remarkably improved.

A titanium-containing silicon oxide capable of producing an epoxide in a high yield when used as a catalyst in a reaction for producing an epoxide from an olefin and a hydroperoxide, in which the titanium-containing silicon oxide satisfies all conditions 1 to 5: Condition 1: an average pore diameter is 10 or more; condition 2: 80% or more of the total pore volume has a pore diameter of 5-200; condition 3: the total pore volume is 0.2 cm3 / g or more; condition 4: the D50 of the titanium-containing silicon oxide is from 1.00 mm to 3.30 mm. And Condition 5: the (D90-D10) / D50 of the titanium-containing silicon oxide is 0.35-1.00.

The invention provides compositions useful in the etching of polysilicon in the presence of silicon oxide and silicon nitride. The compositions comprise choline hydroxide, an oxidizing agent such as periodic acid, and optionally a surfactant, and are useful in the etching of polysilicon in general, and in particular in both the operation of polysilicon trim as well as polysilicon exhume. The utilization of an added oxidizing agent was found to reduce selectivity of silicon etching based on the silicon crystal orientation, which was found to reduce roughness and the presence of residual silicon residues, such as silicon (111) residues after the etching step.

To provide a method of manufacturing a metal oxide film or a metal nitride film on an Si substrate which is not affected by an Si oxide layer or is affected by the Si oxide layer to an extremely small extent.SOLUTION: The method for producing a metallic oxide film comprises growing a metallic oxide film or a metallic nitride film on an Si substrate, wherein the Si substrate is cleaned with a soln. containing NH4F. Supplying the Si substrate after the cleaning to a reaction chamber and adsorbing a metal layer made of a metal constituting the metal oxide film or the metal nitride film on the Si substrate, wherein the adsorption of the metal layer is performed by applying a pressure P (Pa) within a pressure range (Pa) in which an adsorption rate and a desorption rate of the metal constituting the metal oxide film show an equilibrium state in a Langmuir adsorption isotherm at an arbitrary temperature T (°C), subsequently, epitaxially growing the metal oxide film or the metal nitride film.SELECTED DRAWING: Figure 4

The invention discloses a chemical vapor deposition method which comprises the steps that protective layers are formed on the surfaces of an upper polar plate and a lower polar plate of a process chamber through a CVD process, the protective layers comprise silicon oxide, and reaction gas introduced in the process of forming the protective layers comprises silicon-containing organic matter and oxygen; introducing oxygen, introducing radio frequency voltage between the upper polar plate and the lower polar plate, and consuming residual silicon-containing organic matters in the process chamber; the wafer is conveyed to the lower pole plate through the mechanical arm to be placed; depositing a target thin film layer on the wafer through a CVD (chemical vapor deposition) process; and the wafer is conveyed out of the process chamber through the mechanical arm. Before the target thin film layer is deposited on the wafer through the CVD process, after the protective layers are formed on the surfaces of the upper pole plate and the lower pole plate of the process chamber, oxygen and radio frequency voltage continue to be introduced to consume residual silicon-containing organic matter, adhesion of the silicon-containing organic matter on a mechanical arm is reduced, the wafer sliding probability is further reduced to a certain degree, and the service life of the wafer is prolonged. And the yield and the production efficiency are improved.

The present application provides a technique for improving a selection ratio at the time of etching a laminated film in which silicon oxide films and silicon films are alternately laminated. The present application provides an etching method for a laminated film in which silicon oxide films and silicon films are alternately laminated on a substrate, which is an etching method for forming a desired etching shape by plasma, including the steps of: a step of preparing the substrate; a step of cooling the surface temperature of the substrate to -40°C or lower; a step of generating plasma of a gas containing hydrogen and fluorine by high-frequency power for plasma generation; and a step of etching the laminated film by the generated plasma.

The application discloses a concrete superfine powder admixture early strength type additive and a preparation method thereof. The application adopts the modified silicon dioxide filter sludge prepared from silicon dioxide filter sludge, dilute hydrochloric acid and nano alpha-Fe2O3 precursor, and then mixes the modified silicon dioxide filter sludge with triethanolamine, calcium nitrate, calcium hydroxide and a polycarboxylic acid high-performance water reducing agent to prepare the concrete admixture early strength type additive. After the modification of the nano alpha-Fe2O3 precursor, the surface activity of the silicon oxide compound in the filter sludge is improved, so that the silicon oxide compound can participate in the cement hydration reaction and the early strength is improved. Further, the synthesis of the early strength type calcium silicate increases the diversity of the early strength improvement of the cement, and the early strength agent effect of sodium sulfate existing in the filter sludge is fully utilized. The three early strength effects are combined with each other, and the potential functionality of the filter sludge in producing the early strength effect is fully tapped.

Exemplary semiconductor processing methods may include providing one or more first etchant precursors to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A plurality of pairs of silicon oxide material and polysilicon material may be disposed on the substrate. The methods may include forming plasma effluents of the one or more first etchant precursors and contacting the substrate with the plasma effluents of the one or more first etchant precursors to selectively etch silicon oxide material. The methods may include providing one or more second etchant precursors to the processing region, forming plasma effluents of the one or more second etchant precursors, and contacting the substrate with the plasma effluents of the one or more second etchant precursors to selectively etch polysilicon material. A temperature within the processing region may be greater than or about 0° C.

The application discloses a preparation method of a high-strength ceramic diamond grinding head containing polysilazane, and relates to the technical field of abrasive tool manufacturing. The method aims to solve the problems of poor self-sharpening, insufficient heat resistance, weak bonding force, high sintering energy consumption and easy damage to workpieces of traditional metal, resin and conventional ceramic binder diamond grinding heads. The method comprises the following steps: removing impurities from diamond, adding silicon carbide and oxides according to a specific ratio to prepare a precursor, adding a certain mass fraction of modified polysilazane and a dispersing agent, and finally obtaining the grinding head through gradient heating and sectional sintering in a nitrogen atmosphere after pressure forming. The gradient sintering and inert protection can avoid graphitization of the diamond and defects of the blank. The grinding head prepared by the method has high compressive strength, a dense and gap-free bonding interface, excellent Vickers hardness and abrasive holding force.

The invention provides a preparation method and application of a mullite catalyst. The mullite catalyst contains SmMn2O5, the mullite catalyst has a porous structure, and the porous structure is obtained by removing silicon oxide in the mullite catalyst and / or on the surface of the mullite catalyst. The mullite catalyst has a high specific surface area, exposes abundant active sites, has excellent catalytic activity and stability in diesel vehicle tail gas purification, can efficiently and synergistically remove hydrocarbon, nitric oxide and carbon monoxide, has excellent catalytic activity in multi-pollutant synergistic removal, and can be applied to the field of diesel vehicle tail gas purification. The catalyst can be effectively applied to diesel vehicle tail gas purification.

The invention discloses an iron-copper alloy-based friction plate and a preparation method thereof. The iron-copper alloy-based friction plate comprises the following raw materials in percentage by weight: 70-80% of iron-copper alloy powder, 7-15% of a friction reinforced phase composite material, 2-7% of a friction auxiliary material, 8-15% of a solid solution strengthening material, 0.7-1.5% of graphite and 0.5-1% of a lubricant, the friction reinforced phase composite material is a mixture of silicon dioxide, silicon carbide and aluminum oxide; the friction auxiliary material is a mixture of silicon-aluminum whiskers, calcium silicate whiskers, manganese-zinc alloy powder and carbon fiber powder; the solid solution strengthening material is zinc-tin-phosphorus alloy powder. The preparation method comprises the following steps: preparing materials; performing compression molding; sintering is performed; and machining and surface treatment. According to the invention, the raw material formulas cooperate with each other and cooperate with each step of the preparation method, so that the prepared product is good in wear resistance and stable in friction coefficient.

A silicon-carbon composite material includes a core portion and a shell layer disposed on a surface of the core portion, where the core portion includes a silicon-based material and / or graphite, the shell layer includes a silicon-carbon composite, and the silicon-carbon composite includes a silicon-oxygen compound SiOx, where 0<x<2. The silicon-carbon composite material allows the electrochemical device to have both high energy density and long cycle life.

The present invention improves at least one of initial efficiency, battery capacity, and cycle characteristics of a non-aqueous electrolyte secondary battery. A negative electrode active material for a non-aqueous electrolyte secondary battery according to one embodiment of the present invention contains porous composite particles containing silicon and a silicon oxide (SiOx, 0 < x < = 2), in which some or all of pores of the porous composite particles are filled with carbon, and some or all of surfaces of the porous composite particles are coated with carbon.

A composition for directly producing a ceramic matrix composite material includes a polymer phase including an thermoplastic elastomer and a low-density polyethylene, the content by volume of the polymer phase being between 40% and 65% relative to the total volume of the composition; fillers dispersed throughout the polymer phase, the content by volume of the fillers being between 35% and 65% relative to the total volume of the composition and including first fillers composed of particles selected from among particles of silicon carbide (SiC), boron carbide, silicon nitride, zirconia and alumina (Al2O3) or from among mixtures of the compounds; and second fillers composed of discontinuous fibrous reinforcements and / or particles that are larger in size than the first fillers, the content by volume of the second fillers being between 0% and 50% relative to the total volume of fillers in the composition.

This invention belongs to the field of coating technology and discloses a prebaked anode anti-oxidation ceramic coating for electrolytic aluminum and its preparation method. The coating comprises the following raw materials in the indicated mass percentages: ceramic aggregate 45-55%, binder 40-50%, suspending agent 0.5-5%, functional additives 0.2-5%, and water 0.5-6%. The ceramic aggregate is composed of at least two of alumina, silicon carbide, zirconium oxide, and silica powder, and contains at least alumina and silicon carbide. The binder is a mixture of sodium silicate and potassium silicate. The prebaked anode anti-oxidation ceramic coating for electrolytic aluminum of this invention is prepared by a two-step curing method. The binder interacts with the ceramic aggregate, undergoing a chemical reaction at high temperature to generate substances that improve the performance of the ceramic coating and increase its strength. The ceramic coating of this invention, after being kept at 900℃ for 72 hours, exhibits a weight loss rate of less than 1% in an oxidation experiment, demonstrating its excellent anti-oxidation properties at high temperatures.

The present application relates to a kind of composite silicon carbon negative electrode material and its preparation method and application, composite silicon carbon negative electrode material includes: lithium-containing silicon carbon composite material, composite coating layer being coated in the outer surface of lithium-containing silicon carbon composite material, and carbon coating layer being coated in the outer surface of composite coating layer;Lithium-containing silicon carbon composite material includes: porous carbon, and nano silicon particles and lithium silicon alloy attached in the pore of porous carbon;Lithium silicon alloy's chemical general formula is Li x Si, wherein, 0 < x ≤ 4.4;Composite coating layer includes: silicon oxide compound and lithium-containing oxygen compound;Silicon oxide compound's chemical general formula is SiO z , wherein, 0 < z ≤ 2;Lithium-containing oxygen compound includes: one or more of lithium silicate, lithium oxide, lithium hydroxide, lithium carbonate;The composite silicon carbon negative electrode material provided by the embodiment of the present application is used in lithium ion battery, can improve the first coulomb efficiency of battery, inhibit the volume expansion of pole piece, improve the cycle life of battery.