The invention relates to a method for removing
boron impurities contained in polysilicon by injecting
electron beams, in particular to a method for removing the
boron impurities contained in the polysilicon by carrying out
electron injection by utilizing the
electron beams, belonging to the technical field of polysilicon purification by using a
physical metallurgy technology. The method comprises the following steps of: firstly, heating
silicon powder by utilizing a high-temperature
heating furnace; then placing the
silicon powder into an electron beam
smelting furnace, and bombarding the
silicon powder by using low-beam current electron beams; and finally removing a
surface oxidation film of the silicon powder to obtain low-
boron silicon powder by using an HF (
hydrogen fluoride) acid solution. The invention has the outstanding advantages of showing the electrical effect of negative
electricity by releasing electrons by adopting the electron beams, strengthening self electric microfields of silicon materials by combining with the self characteristics of the silicon materials, enabling the boron to be diffused to an interface by being driven by temperature and further enter a
silicon dioxide layer and finally removing a
silicon dioxide layer containing the boron through acid cleaning, thereby achieving the purpose of removing the boron impurities to meet the using requirements on solar grade silicon; in addition, the invention has the advantages of good purification effect and stability, little
energy consumption, low cost, simple process, short period and higher production efficiency.