Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method and device for efficiently and continuously smelting and purifying polysilicon with electron beams

An electron beam, polysilicon technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problem of inability to achieve continuous feeding and continuous discharging, increase material consumption, energy consumption costs, and inability to smelt powder silicon materials, etc. problem, to achieve the effect of low cost, high production efficiency and improved purity

Inactive Publication Date: 2011-07-13
谭毅
View PDF6 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of the Siemens method is that it adopts backward thermal chemical vapor deposition in the core link of the process. There are too many links in the process and the conversion rate is low at one time, which leads to a long process time and increases the cost of materials and energy consumption.
The known invention patent with application number 200810073986.X uses a vacuum electron beam melting furnace to achieve the purpose of purifying polysilicon, which consumes a lot of energy and has low efficiency. Can not realize continuous feeding and continuous discharging, this method has very big difference in principle and structure with the equipment proposed by the present invention

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device for efficiently and continuously smelting and purifying polysilicon with electron beams
  • Method and device for efficiently and continuously smelting and purifying polysilicon with electron beams
  • Method and device for efficiently and continuously smelting and purifying polysilicon with electron beams

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A method for efficiently and continuously melting and purifying polysilicon by electron beams. First, a stable high-purity silicon molten pool is formed in a crucible by electron beams, and then the silicon powder to be purified is continuously dropped into the molten pool through a feeding vacuum chamber, and melted after rapid melting. , so as to remove the impurity phosphorus in the silicon powder, and the obtained low-phosphorus silicon liquid periodically overflows from the crucible, forms a silicon block in the water-cooled inclined copper tank, and falls into the collection cylinder for cooling, and finally flows out continuously through the discharge vacuum lock chamber. Material, complete the process of continuous purification of polysilicon powder.

Embodiment 2

[0028] Such as figure 1 The equipment shown is a high-efficiency, continuous smelting and purification of polysilicon by electron beams. It consists of a vacuum cover 34, a vacuum furnace wall 10, a feeding vacuum lock chamber furnace wall 2, a discharging vacuum lock chamber furnace wall 25, and a collection chamber furnace wall 28 for powder loading. Cover 1 and blanking cover 26 form the shell of the device; the whole device is composed of four chambers, namely the feeding vacuum lock chamber 4, the vacuum chamber 11, the discharging vacuum lock chamber 30, and the collection chamber 29; the vacuum furnace wall 10 is installed on the support leg 27, the charging vacuum chamber furnace wall 2 is installed above the vacuum furnace wall 10, and is connected through the powder falling vacuum valve 41. 18 connected, the upper end of the collection chamber furnace wall 28 is connected to the vacuum lock chamber furnace wall 25, the lower end is fixed on the ground, and connected ...

Embodiment 3

[0030] Adopt the equipment described in embodiment 2 to carry out efficient, continuous smelting and purification of polysilicon by electron beam, the specific process is: the low-phosphorus silicon block with a phosphorus content of 0.00004% is placed on the water-cooled copper crucible 36, and the loading amount of the low-phosphorus silicon block is At the three-fifth position of the water-cooled copper crucible 36, the lower powder baffle plate 39 is rotated to the position of blocking the bottom of the lower powder bucket 40 through the lower rotating mechanism 42, the powder falling vacuum valve 41 is opened, and the upper blocking plate 39 is turned by the upper rotating mechanism 47. The powder plate 43 is rotated to a position away from the bottom of the top loading powder bucket 3, the powder loading cover 1 is opened, and high phosphorus silicon powder 38 is added into the top loading powder bucket 3, and the high phosphorus silicon powder 38 will pass through the top...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of polysilicon purification with a physical metallurgy technology and particularly relates to a method for efficiently and continuously smelting and purifying polysilicon with electron beams. The method comprises the following steps of: forming a stable high-purity silicon smelting pool in a crucible with the electron beams; putting silicon powder to be purified into the smelting pool through a vacuum feeding gate, rapidly smelting and then smelting to remove phosphorous impurity in the silicon powder, wherein the obtained low-phosphorous silicon liquid periodically overflows from the crucible and forms a silicon block in a water-cooling inclined copper cell, and the silicon block drops to a collection barrel to be cooled; and finally carrying out continuous discharging through a vacuum discharging gate to finish the process flow of continuously purifying the polysilicon. In the invention, smelting ways of continuously feeding and continuously discharging are adopted, and the volatile phosphorus impurity with high saturated steam pressure can be removed by smelting the polysilicon with the electron beams, therefore, the aims of efficiently and continuously smelting and removing impurities are achieved, and the purify achieves the using requirement of solar grade silicon. The invention has the advantages of stable technology, low energy consumption, low cost and suitability for large-scale industrial production.

Description

technical field [0001] The invention belongs to the technical field of purifying polysilicon by physical metallurgy technology, and in particular relates to a method for removing impurity phosphorus in polysilicon by using electron beam smelting polysilicon powder technology, and the invention also relates to its equipment. Background technique [0002] Solar-grade polysilicon material is the most important photovoltaic material. It is used in solar cells and can convert solar energy into electrical energy. In today's shortage of conventional energy sources, solar energy has huge application value. In recent years, the global solar photovoltaic industry has grown rapidly. Solar cells The rapid increase in output has directly driven the sharp expansion of polysilicon demand. However, the high manufacturing cost and complex manufacturing process of solar-grade polysilicon materials are the bottlenecks restricting the development of the photovoltaic industry, which seriously hi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B33/037
Inventor 谭毅姜大川邹瑞洵顾正战丽姝
Owner 谭毅
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products