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229results about How to "Technical stability" patented technology

Method and device for coupling and purifying polysilicon and removing phosphorus and metal with electron beams

The invention belongs to the technical field of polysilicon purification with a physical metallurgy technology and particularly relates to a method for coupling and purifying polysilicon and removing phosphorus and metal with electron beams. The method comprises the following steps of: forming a stable melting pool on the top of a low-phosphorous low-metal high-purity silicon ingot with the electron beams; putting silicon powder to be purified into the melting pool and melting to realize the rapid melting of the powder body to remove volatile phosphorous impurity in the silicon powder; simultaneously carrying out directional ingot pulling so that the low-phosphorus polysilicon grows in a directional solidification way; and removing metal impurities in the polysilicon by utilizing a segregation effect. The invention has the remarkable effects that: because ways of melting silicon powder with the electron beams and carrying out directional solidification are simultaneously adopted, the phosphorus impurity is rapidly removed with the electron beams, and the metal impurities with lower segregation coefficient are removed by the directional solidification way, the purity of the polysilicon is effectively improved, and the using requirement of solar grade silicon is achieved. The invention has the advantages of good purification effect, stable technology, simple process, high production efficiency, energy saving, low cost and suitability for batch production.
Owner:谭毅

Cutaneous sensitization detecting method based on co-culturing mode of three dimensional skin model and dendric cell

The invention discloses a cutaneous sensitization detecting method based on a co-culturing mode of a three dimensional skin model and dendric cells. The cutaneous sensitization detecting method comprises the following steps : (1) preparing of the skin model in an early stage, (2) preparing and culturing of dendric cells, (3) constructing of co-culturing of the skin model and the dendric cells and exposing to-be-tested substances, (4) testing of activity of the skin model, (5) detecting of genome of the skin model, (6) detecting of secretion of lower layer cells of the co-culturing model, (7) detecting of expression of surface markers on the dendric cells, and (8) predicting of a statistic method and result. According to the cutaneous sensitization detecting method based on the co-culturing mode of the three dimensional skin model and the dendric cells, 3D skin which is reconstructed in vitro and has functions of barrier and metabolism and the dendric cells with the immunity function are combined together, a co-cultured novel experiment system is constructed and has similar functions and sensitization reaction with human bodies; the cutaneous sensitization of the to-be-tested substances can be evaluated from qualitative and quantitive aspects; and living animals and human bodies can be replaced through the method, and possible cutaneous sensitization caused by chemicals, cosmetics and drugs can be predicted directly.
Owner:程树军 +1

PCCP pipe core vertical molding method automatic production line

The invention provides a PCCP pipe core vertical molding method automatic production line; and the PCCP pipe core vertical molding method automatic production line has such characteristics as stable performance, good reliability, easy maintenance, high safety, automation, high information degree and high production efficiency. The PCCP pipe core vertical molding method automatic production line comprises more than one operation lines, more than one maintenance lines, mold pushing devices, concrete loading and casting systems, mold transfer cars, transverse moving ferry vehicles, a maintenance line control system and a PLC production line control system; multiple sets of PCCP molds are arranged on the operation lines and the maintenance lines; the mold pushing devices are arranged on the operation lines and the maintenance lines; the mold transfer cars can move on the operation lines and the maintenance lines; the transverse moving ferry vehicles are matched with the operation lines and the maintenance lines; the concrete loading and casting systems are arranged on the operation lines for casting PCCP molds on the operation lines; the maintenance line control system is used for performing steam control for molds on the maintenance lines; and the PLC production line control system is used for interworking of all systems to finish prefabricating of PCCP pipe cores.
Owner:SHANDONG ELECTRIC POWER PIPELINE ENG

Method for changing solidifying crucible bottom layering manner in electron-beam polycrystalline silicon purification

InactiveCN106894084AReduced power to irradiate solidified cruciblesImprove qualityPolycrystalline material growthSingle crystal growth detailsCrucibleElectron
A method for changing solidifying crucible bottom layering manner in electron beam polycrystalline silicon purification belongs to the field of electron-beam melting and comprises the following steps: layering 3 Kg of polycrystalline silicon wafers (with thickness of 7-10 mm) at the bottom of a solidifying crucible, and layering 5 Kg of polycrystalline silicon fragments on the polycrystalline silicon wafers; preheating electron guns; gradually increasing the power of an electron gun for irradiating a smelting crucible to 250 KW and the power of an electron gun for irradiating the solidifying crucible to 50 KW, and melting silicon; increasing the power of the electron gun for irradiating the solidifying crucible to 200 KW, and melting silicon; turning off the electron gun for irradiating the smelting crucible, outpouring silicon liquid, and increasing the power of the electron gun for irradiating the solidifying crucible to 250 KW; increasing the power of the electron gun for irradiating the smelting crucible to 250 KW, and melting and smelting silicon; and turning off the electron gun for irradiating the smelting crucible, outpouring silicon liquid, turning on the electron gun, keeping the power at 250 KW for 10 min, keeping the power at 200 KW for 2 min, keeping the power at 150 KW for 3 min, keeping the power at 120 KW for 5 min, keeping the power at 100 KW for 7 min, keeping the power at 80 KW for 8 min, keeping the power at 50 KW for 12 min, keeping the power at 30 KW for 16 min, keeping the power at 20 KW for 20 min, decreasing the power to 0 KW, and reducing the electron beam for solidifying. The method disclosed by the invention can increase product yield, and reduce the energy consumption of electron beam polycrystalline silicon purification.
Owner:DALIAN UNIV OF TECH QINGDAO NEW ENERGY MATERIALS TECH RES INST CO LTD

Method for purifying polysilicon through enhanced alloying segregation

InactiveCN102786060AAchieve removalMeeting Solar Grade Silicon RequirementsChemical industrySilicon compoundsBorideAlloy
The invention belongs to the technical field of metallurgical purification, in particular to a method for enhancing purifying polysilicon through enhanced alloying segregation. The method comprises the following steps of firstly pre-washing industrial silicon and primary aluminum, and fully melting the primary aluminum under the protection of argon, and then adding the industrial silicon to the molten aluminum liquid, heating the mixture to 1100-1200 DEG C, and performing alloying melting; after the mixture is fully molten, adding metal or metal oxide, preserving the temperature and then slowly cooling the mixture, separating boride and primary silicon in sequence, and depositing the boride and primary silicon at the bottom of a crucible; dumping and storing the aluminum-silicon melt at the upper part of the crucible, and finally performing inorganic acid treatment on the primary silicon, removing residual metal and boride, and performing drying treatment on the treated primary silicon to obtain the polysilicon with low boron content. According to the method provided by the invention, on the basis of purification of Si-Al alloy, trace metals such as Fe, Ti, TiO2 or metal oxides are added, the purpose of removing boron impurities in the silicon can be realized, so that the boron content can meet the requirement of the solar grade silicon; the practicability is strong, the industrial production period is short, the energy is saved, the consumption is reduced, the environment is protected, the technology is stable and the production efficiency is high.
Owner:DALIAN UNIV OF TECH

Method for purifying polysilicon by adopting electron beam to carry out fractionated smelting

The invention belongs to the technical field of purification of polysilicon by a physical metallurgical technology. A method for purifying the polysilicon by adopting an electron beam to carry out fractionated smelting comprises the following steps: firstly preparing a material; placing a cleaned and dried silicon material into an electronic beam smelting furnace; carrying out preprocessing; carrying out water cooling on a crucible and preheating an electronic gun; and finally purifying, i.e. melting and smelting for a certain time by adopting the electron beam with a small beam current of 200 to 300mA, then reducing the beam current to zero, smelting the polysilicon for a certain time by the small beam current of 200 to 300mA and stopping the beam current after a silicon ingot is completely darkened and silicon steam is condensed back into a molten pool, repeatedly repeating the operation of smelting small beam current and stopping beam current, and finally carrying out cooling and condensing to obtain a polysilicon ingot with low phosphorus content. The method has the obvious effects that due to the adoption of the technology of carrying out electro beam fractionated smelting, the evaporation loss of silicon is reduced; the method has good purifying effect, stable technology, simple process, short period and high production efficiency; energy is saved; and consumption is reduced.
Owner:DALIAN LONGSHENG TECH CO LTD

A navigation shopping cart based on two-dimensional code scanning positioning and a navigation method thereof

The invention relates to the field of positioning navigation, in particular to a navigation shopping cart based on two-dimensional code scanning positioning and a navigation method thereof. A navigation shopping cart based on two-dimensional code scanning positioning comprises a shopping cart body. The code scanning device is arranged on the shopping cart body, and the code scanning device is usedfor scanning an indoor two-dimensional code, obtaining two-dimensional code information and then transmitting the two-dimensional code information to a background server; The intelligent terminal isarranged on the shopping cart body, the intelligent terminal comprises a display screen, and the intelligent terminal is used for receiving and displaying the position and direction information foundby the background server through the two-dimensional code information; Wherein a two-dimensional code storing two-dimensional code information is arranged on the shopping cart body, and the two-dimensional code information comprises an ID number. The technical problems that in the prior art, a two-dimensional code cannot be scanned in real time for positioning, and the positioning precision is nothigh are solved.
Owner:ZHUHAI HENGQIN GREAT AIM VISIBLE LIGHT COMM TECH

All-metal hollow dot matrix-honeycomb mixed sandwich structure and interlocking preparation method thereof

The invention discloses an all-metal hollow dot matrix-honeycomb mixed sandwich structure and an interlocking preparation method thereof and relates to a sandwich structure and an interlocking preparation method thereof. The invention aims to enhance the energy absorption capability of a metal honeycomb and improve the shear strength. An upper panel and a lower panel are arranged in parallel from top to bottom; square honeycomb interlocking formation sheets are assembled by interlocking and then arranged between the upper and lower panels; multiple oblique round tubes with narrow-long notches are interlocked to the assembly one by one to form a hollow pyramid type dot matrix-square honeycomb mixed core which then is combined with the upper and lower panels to form a sandwich structure. The preparation method comprises the following steps: (I) processing a core component and panels; (II) interlocking to assemble the dot matrix-honeycomb mixed core, and then combining with the upper and lower panels to form a sandwich structure assembly; (III) connecting by a vacuum welding technology to form a whole structure. The all-metal hollow dot matrix-honeycomb mixed sandwich structure disclosed by the invention is applied to the fields such as aerospace, ships and oceans, underwater blast resistance and transportation buildings as an efficient energy absorption protection device.
Owner:HARBIN INST OF TECH

Paris polyphylla seedling raising method capable of enhancing planting percent

InactiveCN106034705ASolve the problem of low seedling rateSeedling rate shortenedPlant cultivationCultivating equipmentsDiseasePlant disease
The invention discloses a Paris polyphylla seedling raising method capable of enhancing planting percent. The method comprises the steps of seed pretreatment, soil preparation, management and outplanting. The method particularly comprises the following steps: selecting a nursery land, plowing, and solarizing; in a sunny day, making boxes, spreading a bactericide and a pesticide, carrying out spot seeding, line seeding or broadcast sowing, covering humus soil and a moisturizing layer, and watering thoroughly and deeply; after the Paris polyphylla leaves are flat, spraying a foliage fertilizer, and covering humus soil; spraying the bactericide once a month to prevent the seedling diseases; and after the emergence of seedlings, carrying out nursery cultivation for 11-13 month, outplanting and carrying out permanent planting in the field. The method basically solves the problem of low planting percent of the Paris polyphylla, can greatly shorten the seed and seedling outplanting time of the Paris polyphylla, and achieves the goals of stable technique and high planting percent. The method has the advantages of simple operative technique and high rate of emergence; and the rate of emergence is up to 95% or above which is higher than that of the traditional technique by 10-15%. The planting percent is 80% or above which is higher than that of the traditional technique by 15-20%. The method shortens the seed and seedling outplanting period of Paris polyphylla by more than 1 year.
Owner:XISHUANGBANNA TROPICAL BOTANICAL GARDEN CHINESE ACAD OF SCI +1

Method for extracting polysilicon through electron beams and acid washing

The invention relates to a method for extracting polysilicon through electron beams and acid washing, comprising the following steps of: firstly, placing a silicon material containing high impurity content into an electron beam smelting furnace, carrying out electron beam smelting to remove the volatile impurity of phosphorus, coagulating rapidly to form a silicon ingot, in which numerous fine grains are formed and metal impurities are enriched on the grain boundary of the grains, finally crushing the silicon ingot along the grain boundary to fully expose the grain boundary, and then carrying out acid washing to remove the metal impurities to obtain the silicon ingot with lower content of the phosphorous and the metal impurities. By combining electron beam smelting used for removing the volatile impurity of the phosphorus, acid washing used for removing the metal impurities on the grain boundary, and further phosphorus removal as well as utilizing the effect that electron beams rapidly coagulates after smelting to generate fine grains, the invention completes the removal process of the phosphorus and the metal impurities efficiently and rapidly, thereby meeting the operating requirements on solar grade silicon; and moreover, the invention has the remarkable characteristics of high purification efficiency, stable technology, short period, high production efficiency, low energy consumption and low cost.
Owner:DALIAN LONGSHENG TECH CO LTD
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