Method for abstracting solar energy level silicon by physics metallurgical method

A solar-level, physical metallurgy technology, applied in the direction of chemical instruments and methods, silicon compounds, non-metallic elements, etc., can solve the problems of long construction period and huge investment, and achieve the effect of short construction period, low investment and simple process method

Inactive Publication Date: 2008-03-19
JIAWEI SOLAR WUHAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

(CSG Yichang project, Ningxia project) The existing problems are: the improvement of Siemens method requires huge investment, and the construction period is long
Extensive use of liquid chlorine and hydrogen has environmental and safety issues. Although high-purity brick silicon produced by physical metallurgy is not suitable for large-scale integrated circuits, polysilicon with a purity of 5N is very suitable for manufacturing solar-grade batteries.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] A method for refining solar-grade silicon by physical metallurgy, the steps of which are:

[0020] 1. Using vacuum induction smelting, add metal silicon raw materials into the high-purity oxide crucible. The raw materials are industrial silicon of 2102, 2105, and 211 grades. The main impurities range: %

[0021] Fe Al Ca Si

[0022] 0.20 0.01 0.02-0.1 99.60-99.68

[0023] The metal silicon is pulverized into the furnace, and the particle size is controlled within the range of 10mm.

[0024] 2. Heat the raw material in the high-purity oxide crucible, put the raw material into the induction melting furnace and then evacuate it to 5×10-1Pa.

[0025] 3. Inject protective gas (nitrogen or argon), set the melting temperature at 1450 or 1650 or 1670 or 1680 or 1720 or 1740 or 1760 or 1775 or 1780 ° C, when the melt temperature reaches 1600 degrees, start bottom blowing strong oxidation Inert gas chlorine, at this moment continue to heat, but not more than 1780 ℃, make it st...

Embodiment 2

[0030] 1. Use vacuum induction smelting to add metal silicon raw materials into the high-purity oxide crucible. The raw material is domestically produced metal silicon with a brand name of 311, and its main impurity range: %

[0031] Fe Al Ca Si

[0032] 0.30 0.10 0.10 99.50

[0033] The 311 metal silicon is crushed into the furnace, and the particle size is controlled within the range of 10mm.

[0034] 2. Heat the raw material in the high-purity oxide crucible, put the raw material into the induction melting furnace and then evacuate it to 5×10-1Pa.

[0035]3. Inject protective gas (nitrogen or argon), set the melting temperature at 14500 or 1650 or 1670 or 1680 or 1720 or 1740 or 1760 or 1775 or 1780 ° C, when the melt temperature reaches 1600 degrees, start bottom blowing strong oxidation Inert gas chlorine, at this moment continue to heat, but not more than 1780 ℃, make it stir the melt, fully react with impurity elements and make it vaporize so as to achieve the purpose...

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Abstract

The invention discloses a solar grade silicon refinery method by using physical metallurgy. The method includes the following steps: firstly, a vacuum induction melting furnace is utilized and a high purity oxide crucible is selected to avoid carbon pollution; secondly, the vacuum pumping is operated simultaneously during the heating process; thirdly, the protective gases are injected into the furnace; when the melting temperature reaches a certain value, strong oxidative gases (chlorine) are injected into the bottom of the crucible; fourthly, while stirring the silicon solution, the strong oxidative gases carry out chemical reactions with Fe-Al-Ca-P-V etc impurity elements, which lead to the gasification and thermal insulation of the elements; fifthly, the refined silicon is injected into the tundish, and the directional crystallization program is processed. The invention has a simple method, an easy operation, rapid heating and no pollution. The silicon material refined by the invention can reach 5N or higher purity.

Description

technical field [0001] The invention relates to the field of renewable energy materials, and more specifically relates to a method for refining solar-grade silicon by physical metallurgy, which directly uses vacuum induction melting and heating, and cooperates with strong oxidizing gas bottom blowing to remove impurities to produce silicon materials for solar cells. Background technique [0002] Since the publication of the Kyoto Protocol, the world has attached great importance to environmental protection and sustainable development. Petroleum, coal and other primary energy sources are gradually being exhausted. Everyone realizes that building a harmonious and sustainable society is empty talk without developing renewable energy as soon as possible. However, the traditional high-purity silicon production method requires large investment and great impact on the environment, and its production capacity is far below the pace of development of the solar photovoltaic industry. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/021C01B33/037
Inventor 丁孔奇
Owner JIAWEI SOLAR WUHAN
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