Method and device for removing foreign matter of phosphor in polysilicon

A polysilicon and impurity technology, applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of stirring and turning, low conversion rate at one time, and long process time, so as to save energy, improve purity, and install simple effect
CN101318655AInactive Publication Date: 2008-12-10QINGDAO NEW ENERGY SOLUTIONS
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
QINGDAO NEW ENERGY SOLUTIONS
Publication Date
2008-12-10
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a method for removing impurity phosphor from polysilicon and a device thereof, in particular to a method for removing impurity phosphor from polysilicon by electronic torch melting technology and the device thereof, which belongs to the technical field of purifying polysilicon by physicometallurgy technology. The method is characterized in that polysilicon can be fully melted by the dual electron beams while water cooled copper crucible is rotated, polysilicon can be added in the melting process to realize continuous operation, thus removing the impurity phosphor from polysilicon. Polysilicon is put into the water cooled copper crucible, the cover of a vacuum apparatus is closed; and then the water cooled copper is vacuumized, a left electron gun and a right electron gun are preheated. The shell of the device consists of a vacuum apparatus cover and a vacuum drum, the internal cavity of the vacuum drum is a vacuum chamber. The harmful impurity phosphor in polysilicon is thoroughly removed by the electron beam melting, which effectively improves the purity of polysilicon and realizes the continuous operation. The method has high efficiency; the device is simple and saves energy.
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Description

technical field

[0001] The invention belongs to the technical field of purifying polysilicon by physical metallurgy technology, and in particular relates to a method and a device for removing impurity phosphorus in polysilicon by electron beam smelting technology. Background technique

[0002] High-purity polysilicon is the main raw material for solar cells. The preparation of high-purity polysilicon abroad mainly uses the Siemens method, specifically the silane decomposition method and the gas-phase hydrogen reduction method of chlorosilane, in which SiHCl 3 The Siemens method is currently the mainstream technology for polysilicon preparation. SiHCl 3 The useful deposition ratio of the method is 1×10 3 , is SiH 4 100 times. The deposition rate of the Siemens method can reach 8-10 μm / min. The conversion efficiency of one pass is 5% to 20%, and the deposition temperature is 1100°C, second only to SiCl 4 (1200°C), the power consumption is about 120kWh / kg, and the power ...

Claims

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