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Phosphorus diffusion method for physical metallurgy polycrystalline silicon solar cell

A technology of solar cells and physical metallurgy, applied in the field of diffusion process, can solve problems such as limited degree of optimization, and achieve the effect of reducing efficiency loss, improving cell crystal structure deterioration, and good diffusion uniformity

Inactive Publication Date: 2015-03-11
INNER MONGOLIA RIYUE SOLAR ENERGY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is difficult to solve the above problems simply by changing the temperature, concentration or time, and the degree of optimization is limited

Method used

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  • Phosphorus diffusion method for physical metallurgy polycrystalline silicon solar cell
  • Phosphorus diffusion method for physical metallurgy polycrystalline silicon solar cell
  • Phosphorus diffusion method for physical metallurgy polycrystalline silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0086] On the basis of the traditional process comparison example, the optimized two-step constant temperature technology of the present invention was adopted. As Example 1, 400 physical metallurgical polysilicon wafers with suede surfaces were cleaned and placed in a diffusion furnace for protection and diffusion. The target square resistance is 85Ω, which includes the following steps:

[0087] into the boat

[0088] After texturing, the silicon wafers enter the diffusion furnace. During the process of entering the silicon wafers into the boat, large nitrogen is introduced into the air inlet pipe of the diffusion furnace. The large nitrogen flow is 24000sccm, and the boat entry time is 640s;

[0089] constant temperature heat treatment

[0090] The first constant temperature heat treatment: set the temperature of each temperature zone in the quartz tube to: 815 °C at the furnace mouth, 740 °C in the second temperature zone, 730 °C in the third temperature zone, 710 °C in the...

Embodiment 2

[0102] On the basis of the traditional process comparison example, the diffusion step of the present invention is used alone. As Example 2, 400 physical metallurgical polysilicon wafers with suede surfaces are cleaned and placed in a diffusion furnace for protection and diffusion. The diffusion target square resistance is 85Ω , which includes the following steps:

[0103] into the boat

[0104] After texturing, the silicon wafers enter the diffusion furnace. During the process of entering the silicon wafers into the boat, large nitrogen is introduced into the air inlet pipe of the diffusion furnace. The large nitrogen flow is 24000sccm, and the boat entry time is 640s;

[0105] constant temperature

[0106] The temperature of each temperature zone in the quartz tube is set to: 790 °C at the furnace mouth, 788 °C in the second temperature zone, 786 °C in the third temperature zone, 785 °C in the fourth temperature zone, and 785 °C at the furnace tail. The maximum nitrogen flo...

Embodiment 3

[0123] The 400 pieces of physical metallurgical polycrystalline silicon wafers with suede surfaces are cleaned and placed in a diffusion furnace for protection and diffusion. The diffusion target square resistance is 75Ω, which includes the following steps:

[0124] into the boat

[0125] The silicon wafers after texturing enter the diffusion furnace. During the process of entering the silicon wafers into the boat, large nitrogen is introduced into the air inlet pipe of the diffusion furnace.

[0126] constant temperature

[0127] The first constant temperature heat treatment: the temperature of each temperature zone in the quartz tube is set to: 785 °C at the furnace mouth, 720 °C in the second temperature zone, 710 °C in the third temperature zone, 670 °C in the fourth temperature zone, and 783 °C at the furnace end, and keep it during the constant temperature process. Introduce large nitrogen, the large nitrogen flow is 20000sccm, and the constant temperature time is 280s....

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Abstract

The invention provides a phosphorus diffusion method for a physical metallurgy polycrystalline silicon solar cell. The phosphorus diffusion method comprises the steps: (1) performing primary constant-temperature thermal treatment on a silicon slice subjected to cleaning and texturing; (2) performing secondary constant-temperature thermal treatment on the silicon slice subjected to the treatment in the step (1); (3) performing oxidization treatment on the silicon slice subjected to the treatment in the step (2); (4) performing phosphorus diffusion treatment on the silicon slice subjected to the treatment in the step (3) through a phosphorus source; (5) performing annealing treatment on the silicon slice subjected to the treatment in the step (4). The diffusion method disclosed by the invention is applied to preparation of the physical metallurgy polycrystalline silicon solar cell, so that the cost can be reduced, and the yield is increased; the concentration of impurities on the surface of a formed PN node is low, the impurity distribution is uniform, the dispersion uniformity is high, the dead layer effect is reduced, collection of electrons is facilitated, and the efficiency loss of the solar cell due to compounding is reduced, so that the final photoelectric conversion efficiency of a cell slice is improved.

Description

technical field [0001] The invention relates to a diffusion process in the manufacture of solar cells, in particular to a phosphorus diffusion method for physical metallurgical polycrystalline silicon solar cells. Background technique [0002] Solar cells are a device that can directly convert light energy into electrical energy. Because of its clean, environmentally friendly, and pollution-free advantages, solar cells have attracted much attention and are gradually becoming the best new energy sources promising to replace traditional energy sources. [0003] Among many types of solar cells, polycrystalline silicon solar cells have a lower price and higher conversion efficiency, occupying an absolute dominant position in the photovoltaic market, and this trend is difficult to change in the short term. Therefore, it has become an urgent problem to be solved in the field of photovoltaic technology to continue to improve the conversion efficiency of polycrystalline silicon sola...

Claims

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Application Information

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IPC IPC(8): C30B31/18C30B31/08
Inventor 邹凯和江变郭凯华郭永强孟德龙宗灵仑李健
Owner INNER MONGOLIA RIYUE SOLAR ENERGY TECH
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