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Phosphorus Diffusion Method for Physical Metallurgical Polysilicon Solar Cells

A technology of solar cells and physical metallurgy, which is applied in the field of diffusion technology, can solve problems such as limited optimization, and achieve the effects of reducing efficiency loss, low surface impurity concentration, and cost saving

Inactive Publication Date: 2017-06-16
INNER MONGOLIA RIYUE SOLAR ENERGY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is difficult to solve the above problems simply by changing the temperature, concentration or time, and the degree of optimization is limited

Method used

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  • Phosphorus Diffusion Method for Physical Metallurgical Polysilicon Solar Cells
  • Phosphorus Diffusion Method for Physical Metallurgical Polysilicon Solar Cells
  • Phosphorus Diffusion Method for Physical Metallurgical Polysilicon Solar Cells

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0086] The optimized two-step constant temperature technology of the present invention is adopted on the basis of the comparative example of the traditional process. As Example 1, 400 physical metallurgical polysilicon wafers made of suede are cleaned and placed in a diffusion furnace for protection and diffusion. The target square resistance is 85Ω, which includes the following steps:

[0087] into the boat

[0088] Textured silicon wafers enter the diffusion furnace. During the process of silicon wafers entering the boat, a large amount of nitrogen is introduced into the inlet pipe of the diffusion furnace. The maximum nitrogen flow rate is 24000 sccm, and the time for entering the boat is 640s;

[0089] constant temperature heat treatment

[0090] The first constant temperature heat treatment: set the temperature of each temperature zone in the quartz tube as follows: furnace mouth 815°C, temperature zone 2 740°C, temperature zone 3 730°C, temperature zone 4 710°C, furnace...

Embodiment 2

[0102] Using the diffusion step of the present invention alone on the basis of the comparative example of the traditional process, as Example 2, 400 physical metallurgical polysilicon wafers made of suede are cleaned and placed in a diffusion furnace for diffusion, and the diffusion target square resistance is 85Ω , including the following steps:

[0103] into the boat

[0104] Textured silicon wafers enter the diffusion furnace. During the process of silicon wafers entering the boat, a large amount of nitrogen is introduced into the inlet pipe of the diffusion furnace. The maximum nitrogen flow rate is 24000 sccm, and the time for entering the boat is 640s;

[0105] constant temperature

[0106] Set the temperature of each temperature zone in the quartz tube as follows: furnace mouth 790°C, temperature zone 2 788°C, temperature zone 3 786°C, temperature zone 4 785°C, furnace tail 785°C, keep feeding large nitrogen during the constant temperature process, The maximum nitroge...

Embodiment 3

[0123] 400 pieces of physical metallurgical polysilicon wafers with suede surface were cleaned and placed in a diffusion furnace for diffusion. The target square resistance of diffusion was 75Ω, which specifically included the following steps:

[0124] into the boat

[0125] Textured silicon wafers enter the diffusion furnace. During the process of silicon wafers entering the boat, large nitrogen is introduced into the inlet pipe of the diffusion furnace. The maximum nitrogen flow rate is 23000 sccm, and the boat entry time is 640s.

[0126] constant temperature

[0127] The first constant temperature heat treatment: set the temperature of each temperature zone in the quartz tube as follows: furnace mouth 785°C, temperature zone 2 720°C, temperature zone 3 710°C, temperature zone 4 670°C, furnace tail 783°C, keep the temperature during the constant temperature process Introduce large nitrogen, the maximum nitrogen flow rate is 20000 sccm, and the constant temperature time is ...

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Abstract

The invention provides a phosphorus diffusion method for physical metallurgical polycrystalline silicon solar cells, comprising: 1) performing a first constant temperature heat treatment on the cleaned silicon wafer; 2) performing a second constant temperature heat treatment on the silicon wafer treated in step 1) heat treatment; 3) carry out oxidation treatment on the silicon wafer after step 2) treatment; 4) conduct phosphorus diffusion treatment to the silicon wafer after step 3) treatment; 5) carry out phosphorus diffusion treatment on the silicon wafer after step 4) treatment Annealing treatment. The diffusion method of the present invention is applied to the preparation of physical metallurgical silicon solar cells, which can save costs and increase production capacity. The formed PN junction has low surface impurity concentration, uniform impurity distribution, good diffusion uniformity, and reduces the dead layer effect. It is beneficial to the collection of electrons, reducing the efficiency loss of solar cells due to recombination, thereby improving the final photoelectric conversion efficiency of the cells.

Description

technical field [0001] The invention relates to a diffusion process in the manufacture of solar cells, in particular to a phosphorus diffusion method for physical metallurgical polycrystalline silicon solar cells. Background technique [0002] A solar cell is a device that can directly convert light energy into electrical energy. Because of its clean, environmentally friendly, and non-polluting advantages, it has attracted much attention and is gradually becoming the best new energy that is expected to replace traditional energy. [0003] Among the many types of solar cells, polycrystalline silicon solar cells are relatively cheap and have high conversion efficiency, occupying an absolute dominant position in the photovoltaic market, and this trend is difficult to change in the short term. Therefore, it has become an urgent problem to be solved in the field of photovoltaic technology to continue to improve the conversion efficiency of polycrystalline silicon solar cells, red...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B31/18C30B31/08
Inventor 邹凯和江变郭凯华郭永强孟德龙宗灵仑李健
Owner INNER MONGOLIA RIYUE SOLAR ENERGY TECH
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