Polysilicon directional freezing equipment

Abstract

The invention discloses a directional freezing device for polysilicon, which belongs to the technical field of purifying the polysilicon through physical metallurgy techniques, and particularly relates to a polysilicon smelting device that uses a directional freezing method. An inner chamber of a shell of the directional freezing device for polysilicon is a vacuum chamber, and a closed heat preserving region inside the vacuum chamber is composed of an upper heat resisting and insulating fiber sleeve, a lateral quadrate heat resisting and insulating fiber sleeve and a lower heat resisting and insulating fiber sleeve; the middle part of the lower heat resisting and insulating fiber sleeve is opened with a tapered orifice, and a heat resisting and radiating fiber screen that is fixedly connected with a pull rod is inserted into the tapered orifice; the directional freezing device for polysilicon has a supporting platform which consists of a frame-shaped bracket, and a left slide pull rod and a right slide pull rod that are arranged on the frame-shaped bracket; the shell of the directional freezing device for polysilicon is fixed on the frame-shaped bracket. The directional freezing device for polysilicon effectively controls the radiating methods of the liquid polysilicon, ensures the temperature gradient to be kept in a same direction consistently, leads the liquid polysilicon to radiate in a single direction along the bottom, and finishes the directional freezing of the polysilicon. The directional freezing device for polysilicon has the advantages of low energy consumption and little environmental pollution.

Description

technical field

[0001] The invention belongs to the technical field of purifying polysilicon by physical metallurgy technology, in particular to a device for smelting polysilicon by directional solidification. Background technique

[0002] High-purity polysilicon is the main raw material for solar cells. The preparation of high-purity polysilicon abroad mainly uses the Siemens method, specifically the silane decomposition method and the gas-phase hydrogen reduction method of chlorosilane, in which SiHCl 3 The Siemens method is currently the mainstream technology for polysilicon preparation. SiHCl 3 The useful deposition ratio of the method is 1×10 3 , is SiH 4 100 times. The deposition rate of the Siemens method can reach 8-10 μm / min. The conversion efficiency of one pass is 5% to 20%, and the deposition temperature is 1100°C, second only to SiCl 4 (1200°C), the power consumption is about 120kWh / kg, and the power consumption is also relatively high. Domestic SiHCl 3...

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