Method for purifying polycrystalline silicon by directional solidification and slag refining
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- DALIAN UNIV OF TECH
- Publication Date
- 2011-10-19
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of purifying polysilicon by using physical metallurgy technology, and particularly relates to a method for removing boron and metal impurities in polysilicon by using directional solidification technology for slagging and smelting. Background technique
[0002] In a society where energy is scarce and low-carbon environmental protection is advocated, solar energy, as an environmentally friendly new energy, has great application value. In recent years, the global solar photovoltaic industry has grown rapidly, and the output of solar cells has increased rapidly, directly driving the rapid expansion of solar polysilicon demand.
[0003] At present, the methods of purifying solar polysilicon mainly include chemical purification and physical purification. The chemical purification is mainly the Siemens method. Its advantages lie in high product purity and good quality. Harmful gas will be produced. Metallurgy is...