Method for purifying polycrystalline silicon by directional solidification and slag refining

A directional solidification, refining and purification technology, applied in the direction of self-solidification, polycrystalline material growth, chemical instruments and methods, etc., can solve the problems of silicon slag melt disturbance, difficult to meet the requirements of industrialization, and the results are not very ideal. Good effect, effective removal, simple effect
CN102219221AInactive Publication Date: 2011-10-19DALIAN UNIV OF TECH

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
DALIAN UNIV OF TECH
Publication Date
2011-10-19
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention belongs to the technical field of purifying polycrystalline silicon by physical metallurgy technology. A method for purifying polycrystalline silicon by directional solidification and slag refining comprises the following steps: firstly, mixing polycrystalline silicon material and acid slag former uniformly so as to form mixture, then arranging the mixture into a melting crucible ofa directional solidification furnace, slagging and melting the mixture in the melting crucible, simultaneously, conducting directional solidification so as to concentrate metal impurity and waste slag on the top of a silicon ingot, removing boron and metal impurity, and finally cutting the top of the silicon ingot, thus obtaining polycrystalline silicon ingot with low boron and metal content. Themethod has the following obvious effects: the acid slag former for slagging and melting and the directional solidification are adopted simultaneously, the impurity boron in the polycrystalline silicon is removed by the slagging of the acid slag former and the refining, simultaneously, the metal impurity with a smaller segregation coefficient in the polycrystalline silicon is removed by the directional solidification technology, the purity of the polycrystalline silicon material is improved, so that polycrystalline silicon material achieves the using requirement of solar-level polycrystalline silicon material.
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Description

technical field

[0001] The invention belongs to the technical field of purifying polysilicon by using physical metallurgy technology, and particularly relates to a method for removing boron and metal impurities in polysilicon by using directional solidification technology for slagging and smelting. Background technique

[0002] In a society where energy is scarce and low-carbon environmental protection is advocated, solar energy, as an environmentally friendly new energy, has great application value. In recent years, the global solar photovoltaic industry has grown rapidly, and the output of solar cells has increased rapidly, directly driving the rapid expansion of solar polysilicon demand.

[0003] At present, the methods of purifying solar polysilicon mainly include chemical purification and physical purification. The chemical purification is mainly the Siemens method. Its advantages lie in high product purity and good quality. Harmful gas will be produced. Metallurgy is...

Claims

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