Silicon tube and preparation method for silicon-tube solar cell-grade polycrystalline silicon rod

Abstract

The invention relates to a silicon tube and a method for preparing a solar cell-grade intrinsic polycrystalline silicon rod and a boron-doped P type polycrystalline silicon rod by using the silicon tube. By adopting an intrinsic electroconductive silicon ring as seed crystals, a boron-containing P type or intrinsic electroconductive hyperpure silicon tube is drawn by virtue of a single crystal furnace and a CZ (Czochralski) method. The boron-containing P type silicon tube is taken as a heat carrier in a chemical method-based reduction furnace, when the heating temperature of the carrier is within a range from 1050 to 1100 DEG C, silicon generated by reacting hyperpure hydrogen with trichlorosilane is deposited on the heat carrier to prepare a hyperpure silicon-tube polycrystalline silicon rod. The intrinsic electroconductive silicon tube is taken as a container which is filled with raw material silicon silicon generated by using a physical metallurgy, the silicon tube is subjected to multiple directional solidification by use of an FZ (Float Zone) method, and then a compact silicon-tube solar cell-grade polycrystalline silicon rod with high purity is prepared by virtue of segregation effect. The solar cell-grade intrinsic polycrystalline silicon rod prepared by use of the silicon tube and the method creates conditions for the production of solar cell-grade monocrystalline silicon so as to realize the preparation of high-quality low-cost solar cells, and thus is significant for promoting the development of the photovoltaic industry.

Description

technical field [0001] The invention relates to a method for preparing a silicon tube, and also relates to a method for preparing a solar cell-grade intrinsic polycrystalline silicon rod and a boron-doped P-type polycrystalline silicon rod by using a silicon tube in a chemical Siemens method and a physical metallurgy method. Using the polycrystalline silicon rod as a raw material, inexpensive and high-quality solar cell grade P-type boron-doped single crystal silicon is prepared by a Czochralski method, especially a zone melting method. Background technique [0002] Although the solar photovoltaic technology and industry as a recyclable and clean energy source has developed rapidly in the world, it cannot be used as the main electric energy in the national economy at present, because the manufacturing cost of solar cells is high and the photoelectric conversion efficiency is not ideal. [0003] As we all know, solar cells are made on polycrystalline silicon or monocrystallin...

AI Technical Summary

Problems solved by technology

[0002] As a recyclable and clean energy, solar photovoltaic technology and industry have developed rapidly in the world, but it cannot be used as the main electric energy in the national economy at present, because the manufacturing cost of solar cells is high and the photoelectric conversion efficiency is not ideal.

[0003] As we all know, solar cells are made on polycrystalline silicon or monocrystalline silicon. In the whole process, the technical process of solar cell manufacturing is not only mature but also low in cost. Among them, the main factor affecting the cost and performance of solar cells is the raw material polycrystalline silicon used to manufacture cells. 1. The production cost of monocrystalline silicon is too high, and the quality cannot meet the needs of high photoelectric conversion efficiency cells. Therefore, practitioners in various countries are developing new polycrystalline silicon and monocrystalline silicon preparation technologies, processes and equipment, and strive to reduce polycrystalline silicon and monocrystalline silicon. cost and improve quality, thereby reducing the cost of solar cells and improving the photoelectric conversion efficiency of solar cells