19 results about "Float zone" patented technology

The invention discloses a grinding and polishing processing method of an ultra-precise YIG (yttrium iron garnet) single crystal, which is suitable for a planar YIG (yttrium iron garnet) single crystal (circle) prepared by a liquid phase epitaxy method, a molten salt method and a floating zone melting method, and comprises the following steps: grinding the YIG single crystal, and controlling the thickness and the total thickness deviation (TTV) of the crystal; rough polishing is carried out on the YIG single crystal, and subsurface damage of the wafer is eliminated; and finally, carrying out ultra-precision polishing on the YIG crystal to realize surface planarization with sub-nano-scale surface roughness. According to the method, the surface roughness of the yttrium iron garnet single crystal can be controlled below 1nm.

This application discloses a method, system, and floating zone furnace for controlling crystal growth using the floating zone method. The method includes: synchronously acquiring process parameter data and visual image data of the crystal growth interface characterizing the molten zone morphology within the floating zone furnace in real time; inputting the process parameter data and visual image data as multimodal inputs to a pre-trained crystal growth morphology prediction model, whereby the crystal growth morphology prediction model extracts and fuses features from the process parameter data and visual image data, outputting a quantitative prediction sequence of crystal growth morphology parameters in the future prediction time domain; based on the quantitative prediction sequence, using a real-time process control model employing a model predictive control framework, under the condition of satisfying preset operational constraints, continuously optimizing and solving for real-time control commands within the current control cycle that make the predicted output trajectory approximate the target growth trajectory; and sending the real-time control commands to the actuators of the floating zone furnace to adjust the process parameter data and control the crystal growth process.

The application discloses hafnium oxide crystal with multiphase coexistence regulation and a preparation method thereof, and belongs to the technical field of multiphase coexistence regulation. x Hf 1‑x )O 2‑0.5x (0≤x≤0.4); the preparation method comprises the following steps: (1) A2O3 and HfO2 are calculated and weighed according to the molar ratio of (A x Hf 1‑x )O 2‑0.5x , then a dispersing agent is added for wet mixing or ball milling, drying, pre-sintering, and polycrystal material is obtained; (2) the polycrystal material is rolled into a cylinder after being tamped, is pressed, and is sintered to obtain a polycrystal rod; and (3) the polycrystal rod is grown by a light floating zone method. The application realizes controllable regulation of phase transition and multiphase coexistence by combining ion doping and optical floating zone method crystal growth regulation, and by optimizing doping ions and crystal growth parameters, has the advantages of stable preparation process, fast crystal growth speed, short preparation period, low production cost and the like, and is favorable for industrialization popularization in the later period.

This invention discloses a feeding device for an electron beam levitation zone furnace, comprising a guide rail and a transmission assembly disposed inside the guide rail. The transmission assembly includes a clamping component with a centering function. The clamping component includes a housing and several sliders disposed on the inner side of the bottom wall of the housing. The sliders are arranged in a circumferential array. A first contact surface is provided on the side of the slider closest to the housing. A pressure cap is provided above the slider for pushing the slider to slide radially. A second contact surface is provided on the inner side of the bottom of the pressure cap. The second contact surface simultaneously contacts the first contact surface of all sliders during the pressing of the pressure cap. Both the first and second contact surfaces are inclined downwards from the inside out. A through hole is provided at the bottom end of the housing for the raw material rod to extend into the clamping component. The feeding device of this invention achieves precise centering by setting a clamping component with a centering function, ensuring that the geometric center of the raw material rod coincides precisely with the feed axis, and is suitable for metal purification and crystal growth in the metallurgical field.

The application discloses an X-ray irradiation blue synthesis zirconia color change rapid recovery test method, which comprises the following steps: step one, preparing powder according to the mole percentage; step two, adopting a cold crucible floating zone method to synthesize blue zirconia; step three, performing X-ray irradiation on the blue synthesized zirconia crystal to make the blue synthesized zirconia crystal change color; step four, heat treatment; step five, ultraviolet light irradiation; step six, photographing and comparing the synthesized zirconia after irradiation, heat treatment and ultraviolet light irradiation, and determining the chroma of the synthesized zirconia by using a fiber spectrometer to seek the optimal heat treatment and light irradiation parameters for recovering the color to the original chroma before irradiation. Through the rapid recovery test of the irradiation color change of the synthesized zirconia, the new material which can be recycled multiple times and takes into account the economic and environmental benefits is sought, a new selection is provided for the radiation leakage indication lamp material, and the X-ray radiation leakage indication lamp is easier to popularize and apply to the market.

The invention discloses a method and device for improving phosphorus recovery of CaP crystals in sewage by using microbubbles, and the method comprises the following steps: adjusting the pH value of phosphorus-containing sewage to be alkaline, mixing the phosphorus-containing sewage with calcium salt, entering a nucleation reaction zone to obtain sewage containing calcium phosphate microcrystals, and enabling the sewage to flow into an air flotation zone after passing through a flow guide zone; high-pressure dissolved air water in the pressure dissolved air tank is pumped into a perforated pipe at the bottom of the air flotation area, and the perforated pipe releases the high-pressure dissolved air water to generate microbubbles; calcium phosphate microcrystals and microbubbles in the sewage in the air floatation area are flocculated into clusters and float upwards into the scum area; the calcium phosphate microcrystals in the scum area are agglomerated and cured under the shearing action caused by stirring and breaking of the microbubbles to obtain calcium phosphate crystals with the target particle size, and the calcium phosphate crystals are scraped into a scum tank by a scum scraper to realize phosphorus recovery; residual sewage after phosphorus recovery is discharged through a water outlet in the bottom of the air flotation area. The recovery method is simple to operate, and the recovered calcium phosphate crystals are controllable in particle size and high in recovery rate.

The present application relates to the technical field of preparation of large-size bulk single-crystal metal materials, and provides a preparation method of single-crystal niobium with a centimeter level. The present application proposes a method for preparing single-crystal niobium with a centimeter level based on low strain + two-stage annealing. The method drives abnormal growth of dominant grains (the size can reach a centimeter level) by cold rolling deformation of niobium ingot and two-stage annealing, and finally obtains single-crystal niobium with a centimeter level through processing and cutting. The method provided by the present application breaks through the bottleneck that it is difficult to obtain centimeter-level grains by conventional recrystallization annealing process, and realizes stable preparation of single-crystal niobium with a centimeter level. In addition, compared with the electron beam floating zone melting method commonly used in the industry for preparing single-crystal niobium, the present application significantly reduces the equipment investment and production cost, has higher process flexibility and preparation efficiency, and has a wide application prospect.

The invention discloses a preparation method of a special high-quality LaCoO3-delta single crystal with a magnetic transition property. The preparation method comprises the following steps: performing dewatering sintering on La2O3 powder; putting the pretreated La2O3 powder and Co3O4 powder into a mortar according to a combination reaction ratio, and uniformly grinding; the powder is poured into a customized stainless steel mold and pressed into a sheet shape under the pressure of 1.4 T; placing the flaky sample in a crucible boat, and sintering in a high-temperature furnace at a set temperature of 1050 DEG C for 50 hours; preparing a precursor charge bar, namely uniformly grinding the pressed sample powder which is sintered and cooled to room temperature, putting the pressed sample powder into a latex mold, and carrying out compression molding under high pressure of an isostatic press; sintering the prepared precursor charge bar in a high-temperature furnace to form a polycrystalline charge bar; placing the polycrystal bar in a high-precision optical floating zone method single crystal furnace for single crystal growth; and the bright, glossy and high-quality LaCoO3-delta single crystal is successfully grown by adopting an optical floating zone method.

The application belongs to the technical field of floating zone melting single crystal furnace, in particular to a continuous feeding zone melting furnace, which comprises a crystal growing furnace chamber, a silicon tube is arranged at the upper end of the interior of the crystal growing furnace chamber, a bottom quartz support is fixedly connected to the lower end of the silicon tube, a first cylinder is fixedly connected to the interior of the crystal growing furnace chamber, an induction coil is fixedly connected to the middle part of the first cylinder, the induction coil is located outside the silicon tube, a graphite preheating ring is arranged at the middle part of the upper end of the silicon tube, a plurality of water-cooled quartz tubes are arranged around the outside of the silicon tube, a seed crystal is slidingly arranged at the lower end of the interior of the crystal growing furnace chamber, a feeding assembly is arranged at the upper end of the crystal growing furnace chamber, the feeding assembly comprises a feeding bin arranged at the upper end of the crystal growing furnace chamber, the silicon tube is cooled by the water-cooled quartz tubes, a self-adapting silicon crucible is formed between the melted granular silicon and the un-melted granular silicon, and the problem that the granular silicon may be contaminated by contacting the bottom quartz support is solved.

Disclosed herein is floating zone crystal growth of inorganic oxide materials and methods of use thereof. For example, disclosed herein are methods of making a single crystal of a composition by floating zone crystal growth, the composition comprising A2O3, wherein A is a metal; wherein the single crystal has a lattice dimension of from 3.900 to 4.100 Å. Also disclosed herein are methods of making a single crystal of a composition by floating zone crystal growth, the composition comprising AMO3, wherein A is Ca, Sr, Ba, or a combination thereof, and M is Ti, Zr, Hf, or a combination thereof. Also disclosed herein are single crystals grown by any of the methods disclosed herein and wafers formed from any of the single crystals disclosed herein. Also disclosed herein are devices and / or articles of manufacture comprising any of the single crystals disclosed herein and / or any of the wafers disclosed herein.

The application discloses a kind of blue synthesis zirconia irradiation color change after heat treatment recovery test method, comprising: step one, according to the preparation of powder in mole percentage;Step two, using cold crucible floating zone method blue synthesis zirconia;Step three, to blue synthesis zirconia crystal is irradiated by X-ray, so that it produces color change;Step four, heat treatment;Step five, after irradiation, heat treatment of various synthesis zirconia is photographed contrast, and using fiber optic spectrometer to determine the chroma of these synthesis zirconia, seek the best heat treatment parameter of color recovery to original chroma before irradiation.The application seeks to be recycled by synthesis zirconia irradiation color change after heat treatment recovery test, and new material is considered economic and environmental benefits, to provide new selection for radiation leakage indicating lamp material, so that X-ray radiation leakage indicating lamp is more easily to popularize and apply to market.

The present application relates to radio frequency silicon on insulator structures with superior performance, stability and manufacturability. A semiconductor-on-insulator (e.g., silicon-on-insulator) structure with superior radio frequency device performance and a method of making such a structure are provided by utilizing single crystal silicon handle wafers sliced from float zone grown single crystal silicon ingots.

A method for manufacturing a single crystal silicon comprises:manufacturing a polysilicon rod or polysilicon rods;selecting a representative polysilicon rod from the polysilicon rod or the polysilicon rods;checking whether in an area that does not include a seed core and that is within ⅔ of a radius of the representative polysilicon rod from the center of a cross section of the representative polysilicon rod, the cross section being along an arbitrary radius direction, average grain boundary characteristics of the representative polysilicon rod have following boundary features;a coincidence grain boundary ratio that exceeds 20%, a grain boundary length that exceeds 550 mm / mm2, and a random grain boundary length that does not exceed 800 mm / mm2; andmanufacturing single crystal silicon using the rest of the manufactured polysilicon rod or the rest of the manufactured polysilicon rods as a raw material or raw materials using a Floating Zone (FZ) method when the representative polysilicon rod has the above boundary features.

The application relates to a growth method of high-quality MoBiVO4 single crystal materials. Specifically, the Mo:BiVO4 single crystal material is prepared by using an optical floating zone growth method. By controlling the growth process including a growth speed, an oxygen partial pressure and a relative rotating speed, the high-quality Mo:BiVO4 crystal is obtained, and the carrier transport and separation efficiency in the photoelectrode and the photoelectric conversion efficiency are further improved.

The invention discloses a rare earth doped lutetium tantalum oxide single crystal and a preparation method and application thereof, and belongs to the field of scintillator materials. The molecular formula of the crystal is RexLu3-xTaO7, Re is selected from one or more of rare earth elements, and x is more than or equal to 0 and less than or equal to 3. The RexLu3-xTaO7 single crystal is prepared by adopting a laser heating base method or an optical floating zone method, the diameter of the RexLu3-xTaO7 single crystal is 200-1000 mu m, and the length is greater than or equal to 1 cm. Compared with the prior art, the rare earth doped lutetium tantalum oxide RexLu3-xTaO7 single crystal provided by the invention has the advantages that the melting point reaches 2380 DEG C, the density is 9.78 g / cm < 3 > and is higher than that of all scintillators applied at present, and the single crystal has good luminescence property, is a novel high-density scintillator and can be applied to the fields of electromagnetic energy meters, high-resolution radiation detection imaging, irradiation dose monitoring and the like.

The application relates to a high-preference orientation CuAgSe material and a preparation method and application thereof, and the preparation method is as follows: under an inert atmosphere, Cu, Ag and Se elements are placed in a sealed container and vacuumized to obtain a vacuum material; the vacuum material is quenched in a high-temperature molten state, and a cast ingot is obtained after cooling; the cast ingot is ground into powder, placed in a pointed container and vacuum-sealed, and secondary melting-annealing treatment is carried out in a high-temperature state, and a pointed columnar material is obtained after cooling; the pointed columnar material is placed in a pointed container again, vacuum-sealed, and crystal growth is carried out through an optical floating zone method, and a pointed columnar cast ingot, namely the CuAgSe material, is obtained after cooling, and the preparation is completed. Compared with the prior art, the CuAgSe material prepared by the application is a polycrystalline layered material mainly in an orthogonal phase, meets the requirement of thermal conductivity and electrical conductivity decoupling, and has important practical significance for preparing a crystal with good preference orientation and development of transverse thermoelectric effect for a similar system.

The application relates to a method for preparing a beta-Ga2O3 nanostructure, and relates to the field of semiconductor materials. The method uses Ga2O3 powder and graphite powder as raw materials, carries out ball milling and drying, grinds in a mortar, and then sieves through a 200-mesh screen; the materials are loaded into a long rubber balloon, compacted, sealed, vacuumized, and then subjected to isostatic pressing to prepare a cylindrical material rod with uniform thickness and density; pre-sintering is carried out in a tube furnace; the sintered cylindrical material rod is placed into an optical floating zone furnace, the output power of a halogen tungsten lamp of the floating zone furnace is adjusted, oxygen is introduced, and after light irradiation, a growth process of supersaturation precipitation through optical gasification is carried out to prepare the beta-Ga2O3 nanostructure. The nanostructure contains nanofilaments and nanobands, and the nanostructure has different sizes and various morphologies. The method accelerates the growth time of the gallium oxide nanostructure, improves the yield, and reduces the production cost. The prepared structure can be used as a surface enhanced Raman scattering (SERS) substrate, and the large specific surface area and rich adsorption sites enable strong SERS detection.

The invention relates to the technical field of fluid conveying equipment, in particular to a preparation method of a heat-resistant and corrosion-resistant pipeline pump body for high-temperature and high-pressure liquid conveying. According to the method, a functional gradient alloy with continuous Ni / Fe and Cr / Mo double gradients is formed through a layered directional solidification-microwave floating zone melting process, and an amorphous-nanocrystalline composite film is constructed on the inner wall of a pump body in situ by combining ultrasonic-magnetic field synchronous thermoplastic forming, rapid solid solution quenching, femtosecond laser-ICP composite remelting and bidirectional hot-pressing densification treatment. The structural strength, the corrosion resistance and the thermal fatigue life of the pump body in a high-temperature and strong-corrosion environment are remarkably improved, and excellent engineering applicability, safety and reliability are achieved.