28 results about "Float zone" patented technology

The invention discloses a grinding and polishing processing method of an ultra-precise YIG (yttrium iron garnet) single crystal, which is suitable for a planar YIG (yttrium iron garnet) single crystal (circle) prepared by a liquid phase epitaxy method, a molten salt method and a floating zone melting method, and comprises the following steps: grinding the YIG single crystal, and controlling the thickness and the total thickness deviation (TTV) of the crystal; rough polishing is carried out on the YIG single crystal, and subsurface damage of the wafer is eliminated; and finally, carrying out ultra-precision polishing on the YIG crystal to realize surface planarization with sub-nano-scale surface roughness. According to the method, the surface roughness of the yttrium iron garnet single crystal can be controlled below 1nm.

This application discloses a method, system, and floating zone furnace for controlling crystal growth using the floating zone method. The method includes: synchronously acquiring process parameter data and visual image data of the crystal growth interface characterizing the molten zone morphology within the floating zone furnace in real time; inputting the process parameter data and visual image data as multimodal inputs to a pre-trained crystal growth morphology prediction model, whereby the crystal growth morphology prediction model extracts and fuses features from the process parameter data and visual image data, outputting a quantitative prediction sequence of crystal growth morphology parameters in the future prediction time domain; based on the quantitative prediction sequence, using a real-time process control model employing a model predictive control framework, under the condition of satisfying preset operational constraints, continuously optimizing and solving for real-time control commands within the current control cycle that make the predicted output trajectory approximate the target growth trajectory; and sending the real-time control commands to the actuators of the floating zone furnace to adjust the process parameter data and control the crystal growth process.

The application discloses hafnium oxide crystal with multiphase coexistence regulation and a preparation method thereof, and belongs to the technical field of multiphase coexistence regulation. x Hf 1‑x )O 2‑0.5x (0≤x≤0.4); the preparation method comprises the following steps: (1) A2O3 and HfO2 are calculated and weighed according to the molar ratio of (A x Hf 1‑x )O 2‑0.5x , then a dispersing agent is added for wet mixing or ball milling, drying, pre-sintering, and polycrystal material is obtained; (2) the polycrystal material is rolled into a cylinder after being tamped, is pressed, and is sintered to obtain a polycrystal rod; and (3) the polycrystal rod is grown by a light floating zone method. The application realizes controllable regulation of phase transition and multiphase coexistence by combining ion doping and optical floating zone method crystal growth regulation, and by optimizing doping ions and crystal growth parameters, has the advantages of stable preparation process, fast crystal growth speed, short preparation period, low production cost and the like, and is favorable for industrialization popularization in the later period.

The invention relates to the field of photoelectric function crystal material growth, in particular to a high-optical-uniformity potassium tantalate niobate crystal grown through a floating zone method and a method. The method comprises the following steps: (1) calculating a raw material ratio, and determining components of a flux charge bar and a supply bar; (2) performing two-step sintering and cold isostatic pressing to form a raw material rod; (3) carrying out crystal growth by adopting an optical floating zone furnace, regulating and controlling the melting rate of a feeding rod and melt convection, and ensuring stable components; and (4) carrying out thermal annealing treatment in an oxygen environment to improve the performance of the crystal and obtain the high-quality KTN crystal with the component uniformity of 10 <-5 > / mm. A precious metal crucible is not needed, the technological process is simplified, the equipment and material cost is reduced, the raw material utilization rate is remarkably increased, and the method is suitable for large-scale production.

This invention discloses a feeding device for an electron beam levitation zone furnace, comprising a guide rail and a transmission assembly disposed inside the guide rail. The transmission assembly includes a clamping component with a centering function. The clamping component includes a housing and several sliders disposed on the inner side of the bottom wall of the housing. The sliders are arranged in a circumferential array. A first contact surface is provided on the side of the slider closest to the housing. A pressure cap is provided above the slider for pushing the slider to slide radially. A second contact surface is provided on the inner side of the bottom of the pressure cap. The second contact surface simultaneously contacts the first contact surface of all sliders during the pressing of the pressure cap. Both the first and second contact surfaces are inclined downwards from the inside out. A through hole is provided at the bottom end of the housing for the raw material rod to extend into the clamping component. The feeding device of this invention achieves precise centering by setting a clamping component with a centering function, ensuring that the geometric center of the raw material rod coincides precisely with the feed axis, and is suitable for metal purification and crystal growth in the metallurgical field.

The application discloses an X-ray irradiation blue synthesis zirconia color change rapid recovery test method, which comprises the following steps: step one, preparing powder according to the mole percentage; step two, adopting a cold crucible floating zone method to synthesize blue zirconia; step three, performing X-ray irradiation on the blue synthesized zirconia crystal to make the blue synthesized zirconia crystal change color; step four, heat treatment; step five, ultraviolet light irradiation; step six, photographing and comparing the synthesized zirconia after irradiation, heat treatment and ultraviolet light irradiation, and determining the chroma of the synthesized zirconia by using a fiber spectrometer to seek the optimal heat treatment and light irradiation parameters for recovering the color to the original chroma before irradiation. Through the rapid recovery test of the irradiation color change of the synthesized zirconia, the new material which can be recycled multiple times and takes into account the economic and environmental benefits is sought, a new selection is provided for the radiation leakage indication lamp material, and the X-ray radiation leakage indication lamp is easier to popularize and apply to the market.

To provide a single crystal having low impedance.SOLUTION: A method for manufacturing a single crystal being a lithium cobaltate single crystal obtained by doping metal atoms A selected from a group consisting of alkaline earth metal and transition metal having a valence of 5 or more by a traveling solvent floating zone method comprises a step of forming a melting zone including a solvent having a composition different from that of a raw material rod between the raw material rod and a seed crystal to grow the single crystal on the seed crystal. When setting the content of metal atoms A in the raw material rod to total 100 at% of Co atoms and the metal atoms A in the raw material rod to FRA at%, FRA is less than 2.0 at%; and when setting the content of metal atoms A in the solvent to total 100 at% of Co atoms and the metal atoms A in the solvent to SRA at%, SRA is less than 2.0 at%.SELECTED DRAWING: Figure 1

The invention discloses a method and device for improving phosphorus recovery of CaP crystals in sewage by using microbubbles, and the method comprises the following steps: adjusting the pH value of phosphorus-containing sewage to be alkaline, mixing the phosphorus-containing sewage with calcium salt, entering a nucleation reaction zone to obtain sewage containing calcium phosphate microcrystals, and enabling the sewage to flow into an air flotation zone after passing through a flow guide zone; high-pressure dissolved air water in the pressure dissolved air tank is pumped into a perforated pipe at the bottom of the air flotation area, and the perforated pipe releases the high-pressure dissolved air water to generate microbubbles; calcium phosphate microcrystals and microbubbles in the sewage in the air floatation area are flocculated into clusters and float upwards into the scum area; the calcium phosphate microcrystals in the scum area are agglomerated and cured under the shearing action caused by stirring and breaking of the microbubbles to obtain calcium phosphate crystals with the target particle size, and the calcium phosphate crystals are scraped into a scum tank by a scum scraper to realize phosphorus recovery; residual sewage after phosphorus recovery is discharged through a water outlet in the bottom of the air flotation area. The recovery method is simple to operate, and the recovered calcium phosphate crystals are controllable in particle size and high in recovery rate.

The present application relates to the technical field of preparation of large-size bulk single-crystal metal materials, and provides a preparation method of single-crystal niobium with a centimeter level. The present application proposes a method for preparing single-crystal niobium with a centimeter level based on low strain + two-stage annealing. The method drives abnormal growth of dominant grains (the size can reach a centimeter level) by cold rolling deformation of niobium ingot and two-stage annealing, and finally obtains single-crystal niobium with a centimeter level through processing and cutting. The method provided by the present application breaks through the bottleneck that it is difficult to obtain centimeter-level grains by conventional recrystallization annealing process, and realizes stable preparation of single-crystal niobium with a centimeter level. In addition, compared with the electron beam floating zone melting method commonly used in the industry for preparing single-crystal niobium, the present application significantly reduces the equipment investment and production cost, has higher process flexibility and preparation efficiency, and has a wide application prospect.

The invention discloses a preparation method of a special high-quality LaCoO3-delta single crystal with a magnetic transition property. The preparation method comprises the following steps: performing dewatering sintering on La2O3 powder; putting the pretreated La2O3 powder and Co3O4 powder into a mortar according to a combination reaction ratio, and uniformly grinding; the powder is poured into a customized stainless steel mold and pressed into a sheet shape under the pressure of 1.4 T; placing the flaky sample in a crucible boat, and sintering in a high-temperature furnace at a set temperature of 1050 DEG C for 50 hours; preparing a precursor charge bar, namely uniformly grinding the pressed sample powder which is sintered and cooled to room temperature, putting the pressed sample powder into a latex mold, and carrying out compression molding under high pressure of an isostatic press; sintering the prepared precursor charge bar in a high-temperature furnace to form a polycrystalline charge bar; placing the polycrystal bar in a high-precision optical floating zone method single crystal furnace for single crystal growth; and the bright, glossy and high-quality LaCoO3-delta single crystal is successfully grown by adopting an optical floating zone method.

The invention discloses a specific orientation tungsten single crystal bar and a preparation method thereof, and belongs to the technical field of refractory metal single crystal preparation. In order to solve the problems that tungsten is high in melting point and crystal orientation is difficult to control, the method utilizes an electron beam floating zone melting technology and adopts a seed crystal method to prepare the tungsten single crystal. In the preparation process, the distance between a tungsten polycrystalline bar and a tungsten single crystal seed crystal is strictly controlled to be 1-1.5 mm while it is guaranteed that the coaxiality of the tungsten polycrystalline bar and the tungsten single crystal seed crystal is high; after a tungsten polycrystalline bar and a tungsten single crystal seed bar are welded, the center of an electronic gun is moved to the tungsten single crystal seed bar 10 mm below the welding position, the electronic gun is moved from bottom to top, and therefore the tungsten single crystal bar with the specific orientation is obtained. The preparation method is high in efficiency, easy to operate and high in repeatability, the prepared tungsten single crystal bar is uniform in size, specific in orientation and smooth and uniform in surface, and the crystal orientation of the tungsten single crystal and the crystal orientation of the single crystal seed crystal are basically consistent.

The application belongs to the technical field of floating zone melting single crystal furnace, in particular to a continuous feeding zone melting furnace, which comprises a crystal growing furnace chamber, a silicon tube is arranged at the upper end of the interior of the crystal growing furnace chamber, a bottom quartz support is fixedly connected to the lower end of the silicon tube, a first cylinder is fixedly connected to the interior of the crystal growing furnace chamber, an induction coil is fixedly connected to the middle part of the first cylinder, the induction coil is located outside the silicon tube, a graphite preheating ring is arranged at the middle part of the upper end of the silicon tube, a plurality of water-cooled quartz tubes are arranged around the outside of the silicon tube, a seed crystal is slidingly arranged at the lower end of the interior of the crystal growing furnace chamber, a feeding assembly is arranged at the upper end of the crystal growing furnace chamber, the feeding assembly comprises a feeding bin arranged at the upper end of the crystal growing furnace chamber, the silicon tube is cooled by the water-cooled quartz tubes, a self-adapting silicon crucible is formed between the melted granular silicon and the un-melted granular silicon, and the problem that the granular silicon may be contaminated by contacting the bottom quartz support is solved.

The invention provides a metal-state single crystal material with ordered charges. The metal-state single crystal material has the following chemical formula of CaFe < 0.95 > Co < 0.05 > O < 3 >. The invention also provides a method for preparing the metal-state single crystal material with ordered charges, which comprises the following steps: (1) mixing CaCO3, Fe2O3 and Co3O4, and fully and uniformly grinding to obtain a mixture; (2) carrying out first roasting and first annealing on the mixture; (3) grinding the product subjected to the first annealing, and pressing into a rod-shaped object; (4) carrying out second roasting and second annealing on the rod-shaped object, so as to obtain a CaFe < 0.95 > Co < 0.05 > O < 2.5 > polycrystalline rod; (5) taking the CaFe < 0.95 > Co < 0.05 > O < 2.5 > polycrystalline rod as a material rod, and growing a CaFe < 0.95 > Co < 0.05 > O < 2.5 > single crystal through an optical floating zone method; and (6) the CaFe < 0.95 > Co < 0.05 > O < 2.5 > single crystal and an oxidizing agent are subjected to a high-temperature and high-pressure reaction, vacant oxygen is supplemented, and the metal-state single crystal material CaFe < 0.95 > Co < 0.05 > O < 3 > with ordered charges is obtained. The CaFe0. 95Co0. 05O3 single crystal material provided by the invention has a charge order state and a metal state at the same time.

Disclosed herein is floating zone crystal growth of inorganic oxide materials and methods of use thereof. For example, disclosed herein are methods of making a single crystal of a composition by floating zone crystal growth, the composition comprising A2O3, wherein A is a metal; wherein the single crystal has a lattice dimension of from 3.900 to 4.100 Å. Also disclosed herein are methods of making a single crystal of a composition by floating zone crystal growth, the composition comprising AMO3, wherein A is Ca, Sr, Ba, or a combination thereof, and M is Ti, Zr, Hf, or a combination thereof. Also disclosed herein are single crystals grown by any of the methods disclosed herein and wafers formed from any of the single crystals disclosed herein. Also disclosed herein are devices and / or articles of manufacture comprising any of the single crystals disclosed herein and / or any of the wafers disclosed herein.

The application discloses a kind of blue synthesis zirconia irradiation color change after heat treatment recovery test method, comprising: step one, according to the preparation of powder in mole percentage;Step two, using cold crucible floating zone method blue synthesis zirconia;Step three, to blue synthesis zirconia crystal is irradiated by X-ray, so that it produces color change;Step four, heat treatment;Step five, after irradiation, heat treatment of various synthesis zirconia is photographed contrast, and using fiber optic spectrometer to determine the chroma of these synthesis zirconia, seek the best heat treatment parameter of color recovery to original chroma before irradiation.The application seeks to be recycled by synthesis zirconia irradiation color change after heat treatment recovery test, and new material is considered economic and environmental benefits, to provide new selection for radiation leakage indicating lamp material, so that X-ray radiation leakage indicating lamp is more easily to popularize and apply to market.

A method for manufacturing a glass substrate for a display, the method comprising: a first step in which a glass raw material is melted (S11), the melted glass is clarified (S12), the clarified molten glass is molded into a glass ribbon (S13) on a molten metal in a float bath, the glass ribbon is pulled out from the float bath, the glass ribbon is conveyed while being slowly cooled to a temperature equal to or lower than the strain point temperature of the glass (S14), and a second step in which the glass ribbon is cooled to a temperature equal to or lower than the strain point temperature of the glass; cutting (S15) the glass ribbon (5) to obtain a glass substrate (10); a second step in which protrusions on the bottom surface (10a) of the glass substrate (10) are detected (S21), and the protrusions are removed by applying an etching solution to the protrusions (S22); and a third step in which zinc, iron, or aluminum is supplied (S31) to the foreign matter adhering to the bottom surface (10a) of the glass substrate (10), and the bottom surface (10a) is cleaned (S32) with an inorganic acid aqueous solution.

The present application relates to radio frequency silicon on insulator structures with superior performance, stability and manufacturability. A semiconductor-on-insulator (e.g., silicon-on-insulator) structure with superior radio frequency device performance and a method of making such a structure are provided by utilizing single crystal silicon handle wafers sliced from float zone grown single crystal silicon ingots.

A method for manufacturing a single crystal silicon comprises:manufacturing a polysilicon rod or polysilicon rods;selecting a representative polysilicon rod from the polysilicon rod or the polysilicon rods;checking whether in an area that does not include a seed core and that is within ⅔ of a radius of the representative polysilicon rod from the center of a cross section of the representative polysilicon rod, the cross section being along an arbitrary radius direction, average grain boundary characteristics of the representative polysilicon rod have following boundary features;a coincidence grain boundary ratio that exceeds 20%, a grain boundary length that exceeds 550 mm / mm2, and a random grain boundary length that does not exceed 800 mm / mm2; andmanufacturing single crystal silicon using the rest of the manufactured polysilicon rod or the rest of the manufactured polysilicon rods as a raw material or raw materials using a Floating Zone (FZ) method when the representative polysilicon rod has the above boundary features.

The present invention relates to the field of environmental barrier coatings or thermal barrier / environmental barrier integrated protective coatings, and discloses a single-crystal rare-earth double silicate material with strong CMAS corrosion resistance and a preparation method thereof. Aiming at rare-earth double silicates with good thermal expansion matching and excellent corrosion resistance, the present invention obtains a single-crystal rare-earth double silicate material with strong CMAS corrosion resistance by improving the preparation method, meeting the requirements of environmental barrier or thermal barrier / environmental barrier integrated protective materials. The specific process is as follows: Using rare-earth oxides and silicon oxide as raw materials, mechanical mixing, pressureless sintering, molding by die pressing, cold isostatic pressing, and optical floating zone melting directional solidification are carried out in sequence to prepare a single-crystal rare-earth double silicate material with closely combined internal structure, single grain orientation, and excellent CMAS corrosion resistance.

The invention relates to a float-zone device designed to produce the single-crystal rod from a polycrystal rod during a float-zone process by successive, zone-by-zone melting along the height direction of the polycrystal rod by inductive heating by means of the continuous introduction of thermal power via a coil unit (5) of the float-zone device that moves along the height direction of the polycrystal rod and surrounds the polycrystal rod at a distance. A current thermal power during the float-zone process originates from a current active power of a transmitter unit (4), comprising a capacitor (1), of the float-zone device that electrically interacts with the coil unit (5). The capacitor (3) is adjustable and is designed to keep the frequency of the transmitter unit (4) set at a predeterminable and essentially constant value during the float-zone process.

The application relates to a growth method of high-quality MoBiVO4 single crystal materials. Specifically, the Mo:BiVO4 single crystal material is prepared by using an optical floating zone growth method. By controlling the growth process including a growth speed, an oxygen partial pressure and a relative rotating speed, the high-quality Mo:BiVO4 crystal is obtained, and the carrier transport and separation efficiency in the photoelectrode and the photoelectric conversion efficiency are further improved.

The invention discloses a rare earth doped lutetium tantalum oxide single crystal and a preparation method and application thereof, and belongs to the field of scintillator materials. The molecular formula of the crystal is RexLu3-xTaO7, Re is selected from one or more of rare earth elements, and x is more than or equal to 0 and less than or equal to 3. The RexLu3-xTaO7 single crystal is prepared by adopting a laser heating base method or an optical floating zone method, the diameter of the RexLu3-xTaO7 single crystal is 200-1000 mu m, and the length is greater than or equal to 1 cm. Compared with the prior art, the rare earth doped lutetium tantalum oxide RexLu3-xTaO7 single crystal provided by the invention has the advantages that the melting point reaches 2380 DEG C, the density is 9.78 g / cm < 3 > and is higher than that of all scintillators applied at present, and the single crystal has good luminescence property, is a novel high-density scintillator and can be applied to the fields of electromagnetic energy meters, high-resolution radiation detection imaging, irradiation dose monitoring and the like.

The application relates to a high-preference orientation CuAgSe material and a preparation method and application thereof, and the preparation method is as follows: under an inert atmosphere, Cu, Ag and Se elements are placed in a sealed container and vacuumized to obtain a vacuum material; the vacuum material is quenched in a high-temperature molten state, and a cast ingot is obtained after cooling; the cast ingot is ground into powder, placed in a pointed container and vacuum-sealed, and secondary melting-annealing treatment is carried out in a high-temperature state, and a pointed columnar material is obtained after cooling; the pointed columnar material is placed in a pointed container again, vacuum-sealed, and crystal growth is carried out through an optical floating zone method, and a pointed columnar cast ingot, namely the CuAgSe material, is obtained after cooling, and the preparation is completed. Compared with the prior art, the CuAgSe material prepared by the application is a polycrystalline layered material mainly in an orthogonal phase, meets the requirement of thermal conductivity and electrical conductivity decoupling, and has important practical significance for preparing a crystal with good preference orientation and development of transverse thermoelectric effect for a similar system.

The invention discloses a molybdenum alloy single crystal containing a dispersed carbide second phase and a preparation method of the molybdenum alloy single crystal, and belongs to the technical field of preparation of refractory metal single crystals. The alloy comprises the following components in percentage by weight: 5wt% of Re, 0.2-1wt% of NbC and the balance of Mo and other impurity elements, the specific preparation process comprises the steps that Mo metal, Re metal and NbC powder are premixed according to the alloy component proportion, then the premixed raw materials are subjected to electric arc melting through a vacuum non-consumable tungsten electrode melting furnace to obtain a molybdenum alloy ingot, and then the molybdenum alloy ingot is machined to prepare the molybdenum alloy bar. And finally, the molybdenum alloy single crystal containing the dispersed carbide second phase is prepared through electron beam floating zone smelting. The molybdenum alloy single crystal containing the dispersed carbide second phase is prepared by optimizing alloy component design and dispersed phase selection.

The invention discloses a diode manufacturing method and a diode, and belongs to the technical field of semiconductors, and the method comprises the steps: providing a first wafer which is any one of a floating zone melting method wafer, a czochralski method wafer and a neutron transmutation doping method wafer; depositing a protective layer on the front surface of the first wafer, wherein the diffusion velocity of the red phosphorus in the protective layer is lower than that of the red phosphorus in the first wafer; depositing red phosphorus on the back surface of the first wafer; performing high-temperature drive-in processing on the back surface of the first wafer; etching the protective layer to obtain a second wafer; and manufacturing the rectifier diode based on the second wafer. According to the method, the diode with low forward conduction voltage and qualified yield can be manufactured under the condition of lower cost.

The application relates to a method for preparing a beta-Ga2O3 nanostructure, and relates to the field of semiconductor materials. The method uses Ga2O3 powder and graphite powder as raw materials, carries out ball milling and drying, grinds in a mortar, and then sieves through a 200-mesh screen; the materials are loaded into a long rubber balloon, compacted, sealed, vacuumized, and then subjected to isostatic pressing to prepare a cylindrical material rod with uniform thickness and density; pre-sintering is carried out in a tube furnace; the sintered cylindrical material rod is placed into an optical floating zone furnace, the output power of a halogen tungsten lamp of the floating zone furnace is adjusted, oxygen is introduced, and after light irradiation, a growth process of supersaturation precipitation through optical gasification is carried out to prepare the beta-Ga2O3 nanostructure. The nanostructure contains nanofilaments and nanobands, and the nanostructure has different sizes and various morphologies. The method accelerates the growth time of the gallium oxide nanostructure, improves the yield, and reduces the production cost. The prepared structure can be used as a surface enhanced Raman scattering (SERS) substrate, and the large specific surface area and rich adsorption sites enable strong SERS detection.

The invention relates to the technical field of fluid conveying equipment, in particular to a preparation method of a heat-resistant and corrosion-resistant pipeline pump body for high-temperature and high-pressure liquid conveying. According to the method, a functional gradient alloy with continuous Ni / Fe and Cr / Mo double gradients is formed through a layered directional solidification-microwave floating zone melting process, and an amorphous-nanocrystalline composite film is constructed on the inner wall of a pump body in situ by combining ultrasonic-magnetic field synchronous thermoplastic forming, rapid solid solution quenching, femtosecond laser-ICP composite remelting and bidirectional hot-pressing densification treatment. The structural strength, the corrosion resistance and the thermal fatigue life of the pump body in a high-temperature and strong-corrosion environment are remarkably improved, and excellent engineering applicability, safety and reliability are achieved.