Single crystal manufacturing method and device

A manufacturing method and single crystal technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of different judgments, different, unable to reduce the occurrence frequency of single crystal dislocation, etc. dislocation effect

Active Publication Date: 2016-02-03
SUMCO CORP
View PDF6 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Operators operate based on their experience and feeling, but because they directly observe the reducing diameter with their eyes, the judgment of the appropriate state and the amount of operation vary among operators, even if the same operator judges e

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single crystal manufacturing method and device
  • Single crystal manufacturing method and device
  • Single crystal manufacturing method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0060] use figure 1 shown in the single crystal fabrication setup, additionally follow the Figure 5 The shown control block performs the diameter reduction process of the silicon single crystal by automatic control. In the automatic control of the reduction process, the reduction diameter and the reduction position are calculated based on the image data captured by the CCD camera, and the high-frequency current is operated based on the result to perform PID control on the reduction diameter, and the crystal transport speed is also controlled. Perform PID control on the reducing position. The above diameter reduction process was carried out three times to obtain three single crystal samples.

[0061] On the other hand, as a comparative example, the diameter reducing step of the silicon single crystal was performed by manual control. In the manual control of the diameter reduction process, the operator controls the diameter reduction by manipulating the output of the oscilla...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a single crystal manufacturing method and device. The single crystal manufacturing method using the floating zone method comprises a welding process: heating the front end part of a raw material rod and melting the front end part of a raw material rod, and welding the front end part of a raw material rod to a seed crystal of a crystal conveying mechanism; a reducing process, reducing the diameter of the single crystal in the mode for realizing non-mal-position; a cone part forming process: expanding the diameter and enabling the single crystal to grow; and a straight body part forming process: enabling the single crystal to grow with maintained diameter. The reducing process includes: a diameter reducing control process: operating the current supplied to an induction heating coil and performing PID control for the reduced diameter of the single crystal; and a reducing position control process: operating the descent rate of the single crystal so as to perform PID control for the reducing position of the single crystal. Therefore, the reducing process automation can be realized and the mal-location generation frequency of the single crystal can be reduced after transferring to the cone part forming process.

Description

technical field [0001] The present invention relates to a single crystal manufacturing method and manufacturing apparatus, and particularly relates to single crystal diameter reduction (twisting) control in a floating zone melting method (floating zone silicon refining method, FZ method). Background technique [0002] The FZ method is known as one of methods for growing a single crystal of silicon or the like. In the FZ method, a part of a polycrystalline raw material rod is heated to form a molten zone, and the single crystal is gradually grown by gradually pulling down the raw material rod and the single crystal located above and below the molten zone. In particular, in the initial stage of single crystal growth, after melting the front end of the raw material rod to weld the melted portion to the seed crystal, the single crystal is grown to a certain level while reducing the diameter to a smaller diameter in order to avoid dislocation. The diameter reduction process up t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B13/30C30B29/06
Inventor 佐藤利行
Owner SUMCO CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap