P-type epitaxial layer-based binary coded decimal (BCD) integrated device and manufacturing method thereof

Abstract

The invention discloses a P-type epitaxial layer-based binary coded decimal (BCD) integrated device and a manufacturing method thereof and belongs to the technical field of semiconductor power devices. A high-voltage n laterally diffused metal oxide semiconductor (LDMOS) device, a high-voltage n lateral insulated gate bipolar transistor (LIGBT) device, a low-voltage P-channel metal oxide semiconductor (PMOS) device, a low-voltage N-channel metal oxide semiconductor (NMOS) device, a low-voltage plug-and-play (PNP) device and a low-voltage negative-positive-negative (NPN) device are integrated on the same substrate; various devices are manufactured in a P-type epitaxial layer on the surface of a P-type substrate and are self-isolated through the P-type epitaxial layer; an N-type buried layer is formed between the P-type substrate below a high-voltage device and the P-type epitaxial layer; and the N-type buried layer can (or cannot) be formed on the P-type epitaxial layer on two sides below a low-voltage device. Due to the introduction of the N-type buried layer, a lower-resistivity silicon chip can be used as a substrate under the same breakdown voltage, and increase of chip manufacturing cost brought by a manufactured monocrystalline silicon chip by a floating zone (FZ) method is avoided; therefore, the manufacturing cost of the chip is reduced.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor power devices. Background technique [0002] BCD (Bipolar CMOS DMOS) process technology utilizes the high analog accuracy of Bipolar transistors, the high integration of CMOS and the high power characteristics of DMOS (Double-diffused MOSFET) to realize Bipolar analog circuits, CMOS logic circuits, CMOS analog circuits and DMOS high voltage Monolithic integration of power devices. Lateral high voltage power devices LDMOS (Lateral Double-diffused MOSFET) and LIGBT (Lateral Insulated Gate Bipolar Trasistor) are easily compatible with traditional CMOS devices, so they have been widely used in the field of smart power integrated circuits. The primary purpose of the design of the horizontal high-voltage power device is to achieve the rated breakdown voltage under a given drift zone length, and its breakdown voltage is determined by the lowest value of the lateral surface withstand voltage and the lon...

AI Technical Summary

Problems solved by technology

In order to improve the vertical body withstand voltage of the device, high-resistivity silicon wafers are usually used as substrates, but high-resistance wafers (>100Ω·cm) are usually manufactured by zone melting, which increases the cost of silicon wafers and increases chip manufacturing costs.

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