44 results about "Cubic crystal system" patented technology

To provide a ceramic having a high coefficient of thermal expansion and a low dielectric constant.SOLUTION: 50.0 to 90.0 mass% of 2MgO and SiO2, a total of 8.0 mass% or more of one of 7.0 to 14.0 mass% of ZrO2 and 10.0 to 50.0 mass% of Al2O3 or both of 14.0 mass% or less of ZrO2 and 50.0 mass% or less of Al2O3, and 3.0 to 15.0 mass% of one or more selected from Y2O3, CaO, CeO2, and HfO2, wherein a crystalline structure of the is a cubic structure. ZrO2.SELECTED DRAWING: None

The invention discloses a low-thermal-conductivity p-type liquid thermoelectric material and a preparation method thereof. The chemical formula of the low-thermal-conductivity p-type liquid thermoelectric material is Cu6GeTeS4, the low-thermal-conductivity p-type liquid thermoelectric material belongs to a cubic system and a space group, the low-thermal-conductivity p-type liquid thermoelectric material Cu6GeTeS4 forms an anion rigid framework by GeS4 tetrahedral elements isolated in unit cells and body-centered cubic Te, and Cu ions move in the framework. The p-type liquid thermoelectric material keeps a stable cubic phase at 300-873 K, and has low thermal conductivity and a high thermoelectric figure of merit; the ultra-low thermal conductivity of 0.69 to 0.57 W m <-1 > K <-1 > is realized at 300 to 873 K.

The application discloses a kind of cubic system tricobalt tetroxide quantum dots solvent hot preparation method, comprising the following steps: the mixture is obtained by mixing with set proportion with the source of cobalt, alcohol, polyvinylpyrrolidone, deionized water and hydrogen peroxide;The mixture is heated to a preset temperature in a sealed container with a predetermined volume ratio and isothermal reaction for a set time;When the reaction is finished, the reaction product is cooled to room temperature and washed, and the cubic system tricobalt tetroxide quantum dots are obtained after drying.The cubic system tricobalt tetroxide quantum dots with specific crystal structure can be obtained under the optimal preparation conditions, and the tricobalt tetroxide quantum dots with high uniformity of particle size and particle dispersion can be obtained;It can be applied in catalysis, energy storage and sensing fields, and the preparation process is simple and easy to operate, with good repeatability, low energy consumption and low cost, and the process parameters can be scaled up or down, suitable for industrial mass production.

This invention provides a positive electrode active material and its application. The positive electrode active material of this invention comprises matrix particles including lithium metal oxide and a graphite coating layer covering at least a portion of the surface of the matrix particles; the lithium metal oxide has the structure shown in Formula 1; in the X-ray diffraction pattern, the lithium metal oxide is a cubic crystal system in space group Cmca, and has a 002 peak with a 2θ of 17.9°–18.1° and a 131 peak with a 2θ of 67.0°–67.5°; Li n‑y Na y Co 1‑a M a O2, Equation 1, where 0.6 ≤ n ≤ 0.8, 0 < y ≤ 0.05, 0 ≤ a < 0.2; and M is a doping element. The unique composition and crystal structure of this positive electrode active material help improve the battery's specific capacity and cycle performance, especially under high-voltage conditions, enabling the battery to maintain excellent performance.

The invention provides a Bi < 25-x > Er < x > FeO40 piezo-electric crystal, a preparation method thereof and application of the Bi < 25-x > Er < x > FeO40 piezo-electric crystal in catalytic degradation of organic pollutants, the Bi < 25-x > Er < x > FeO40 piezo-electric crystal is a cubic crystal system, the space group is 123, and x is equal to 0.188-0.340. The Bi < 25-x > Er < x > FeO40 piezoelectric crystal can realize piezoelectric degradation of pollutants under stirring and dark conditions or under stirring and illumination conditions, and the piezoelectric catalytic degradation capability of the Bi < 25-x > Er < x > FeO40 piezoelectric crystal can be repaired under the dark and stirring conditions.

The invention discloses a multicolor stress luminescent material for handwriting anti-counterfeiting and a preparation method thereof, the chemical general formula is Lu3-xAl2Ga3O12: xTb < 3 + >, 0.25% < = x < = 3.0%; the crystal structure is an Ia-3d cubic system, and the active ion is Tb < 3 + >. The preparation method comprises the following steps: weighing a lutetium-containing compound raw material, an aluminum-containing compound raw material, a gallium-containing compound raw material and a terbium-containing compound raw material, grinding and uniformly mixing to obtain a mixture, presintering, heating and calcining, cooling to room temperature, and grinding to obtain the terbium ion-doped multicolor stress luminescent material. The terbium ion-doped multicolor stress luminescent material disclosed by the invention has good stress luminescence self-recovery performance, shows different responses of energy level transition to stress in a visible light range, and is adjustable in color. The material has a low-threshold excitation characteristic, can provide multicolor stress luminescence response, and meets multicolor anti-counterfeiting requirements under different stress conditions.

The invention relates to a broad-band cyan luminescent material excited by purple light as well as a preparation method and application of the broad-band cyan luminescent material. The crystal structure of the broadband cyan luminescent material is a cubic system, the space group is Ia-3d, and the broadband cyan luminescent material belongs to a garnet structure type compound; the structural formula is CaLu1-xHfGa2Al3O12: xCe < 3 + >, wherein x is more than or equal to 0.005 and less than or equal to 0.20. The preparation method comprises the following steps: weighing a Ca-containing compound, a Lu-containing compound, an Hf-containing compound, a Ga-containing compound, an Al-containing compound and a Ce-containing compound according to a stoichiometric ratio of a chemical expression, grinding and uniformly mixing to obtain a mixture; pre-sintering the mixture in air to obtain an intermediate product; and grinding and dispersing the intermediate product again, and carrying out secondary sintering in a reducing atmosphere to finally obtain the broadband cyan luminescent material. Compared with the prior art, the broadband cyan luminescent material disclosed by the invention can emit cyan light covering a 420-600nm light region under excitation of purple light.

This invention provides a positive electrode active material and its application. The positive electrode active material includes a lithium metal oxide as shown in Formula 1 or Formula 2. In the X-ray diffraction pattern, the lithium metal oxide has a cubic crystal system with space group Cmca and has a 002 peak with a 2θ of 17.9°–18.1° and a 131 peak with a 2θ of 67.0°–67.5°. In Formula 1 and Formula 2, M1 is selected from at least one of Te, W, Al, B, P, and K; M2 is a doping element different from M1. The positive electrode active material of this invention is beneficial for improving the cycle performance and specific capacity of lithium-ion batteries.

This invention discloses a holmium ion-doped yttrium gadolinium oxide single-crystal optical fiber, its preparation method, and its applications, belonging to the field of laser materials and laser technology. The chemical formula of the single-crystal optical fiber is Ho. 3+ YGdO3, wherein the Ho ion doping concentration is 0.2-1.0 at.%, is a cubic C-type sesquioxide crystal structure with space group Ia-3. This crystal exhibits characteristic absorption peaks at wavelengths of 1100-1200 nm and Ho-derived absorption peaks at 2.80-2.90 μm. 3+ ion 5 I6→ 5 Broad-spectrum mid-infrared fluorescence emission with I7 level transition; this crystal possesses a wide gain bandwidth, a large emission cross section, and excellent thermal properties, making it less prone to thermal lensing and thermal depolarization under continuous or high-repetition-rate pumping of single-crystal fibers, thus ensuring high stability of laser output. It is particularly suitable for realizing broadband tunable and ultrafast mode-locked mid-infrared lasers, and has broad application prospects in laser surgery, environmental monitoring, remote sensing, and other fields.

The invention relates to a near-blackbody high-entropy inverse spinel oxide material, the general formula of the material is (A1xA2yA3zA4uA5v) 3O4, A1, A2, A3, A4 and A5 are any five elements of Fe, Ni, Co, Cr, Mn, Cu and Ti, x, y, z, u and v are equal or approximately equal, and x + y + z + u + v = 1; the structure of the material belongs to a cubic system and has an inverted spinel crystal structure, and the space group of the material is Fd-3m. Meanwhile, the invention also discloses a preparation method of the material. The method is simple to operate and short in production cycle, the obtained high-entropy inverse spinel oxide material has high solar absorptivity and infrared emissivity, the radiation curve of the high-entropy inverse spinel oxide material is close to an ideal black body radiation curve, and the high-entropy inverse spinel oxide material can be widely applied to the fields of radiation heating, human body heat management, aerospace heat dissipation, photovoltaic device cooling and the like.

This invention relates to a scandium-terbium-gallium garnet magneto-optical crystal without radial stripes and its preparation method. The Tb3Sc crystal was grown using the Czochralski method. x Ga 5‑x O 12 The magneto-optical crystal (where x = 0.05–0.3) belongs to the cubic crystal system and has the space group Ia–3d. This method utilizes a small amount of Sc... 3+ Partial Ga doping 3+ This helps suppress the formation of spiral dislocation-related defects, enabling the growth of high-quality terbium gallium garnet magneto-optical crystals without radial stripes. Low-concentration Sc 3+ The doping strategy has shown excellent results in addressing the radial stripe defect in TGG crystals and improving their key performance characteristics, providing a practical new approach for the fabrication of core materials for magneto-optical devices. This crystal material is expected to find practical applications in magneto-optical devices such as magneto-optical isolators, magneto-optical circulators, and magneto-optical modulators.

This invention discloses a preparation method and application of a material for selectively removing thallium ions from water, belonging to the field of environmental protection technology. The invention provides a material for selectively removing thallium ions from water, comprising a carrier and a composite material of graphitic carbon nitride and perovskite titanate loaded on the carrier; the carrier is carbon nanofiber; the composite material of graphitic carbon nitride and perovskite titanate is a mixed powder of graphitic carbon nitride and perovskite titanate; the perovskite titanate has a cubic crystal structure with space group Pmm; the content of graphitic carbon nitride is 4~10wt%, and the content of perovskite titanate is 25~40wt%. The material for selectively removing thallium ions from water provided by this invention, due to the stable coordination between perovskite titanate and graphitic carbon nitride with thallium ions, enhances the adsorption force and selectivity for thallium ions, resulting in more stable binding, better selectivity, and higher removal efficiency.

To solve the aforementioned problem, the present invention is a multilayer film characterized in that a layer containing cerium oxide contains cerium oxide including a cubic crystal system polycrystal structure and a columnar structure, the film thickness of the layer containing cerium oxide is 85 nm or more and 800 nm or less, when the entire layer containing cerium oxide is defined as a region (A) and the oxygen deficiency rate of cerium oxide in the region (A) is defined as an oxygen deficiency rate (V A ), the oxygen deficiency rate (V A ) is 0.05% or more and 10% or less, the film thickness of a layer containing silicon oxide or a layer containing magnesium fluoride is 50 nm or more and 240 nm or less, and the refractive index of the low-refractive layer with respect to light with a wavelength of 500 nm is 1.65 or less.

A crystal is of a non-centrosymmetric structure and belongs to the −43 m point group of the cubic crystal system. M denotes an alkaline earth metal, which can be Ba, Ca, or Sr, and RE denotes a rare earth element, which can be Y, La, Gd, or Yb. The growth method of the M3RE(PO4)3 crystal comprises steps as follows: (1) polycrystalline material synthesis: MCO3, RE2O3, and phosphorous compound are used as raw materials and blended according to the stoichiometric proportions; then, the phosphorous compound is further added to be excessive; the raw materials are sintered twice to obtain the M3RE(PO4)3 polycrystalline material; (2) polycrystalline material melting; (3) Czochralski crystal growth. The M3RE(PO4)3 crystal prepared by the invention is a high-quality single crystal.

A wafer dividing method includes: a step (S1) of forming a first dividing groove on at least one main surface of a wafer composed of a semiconductor having a crystal structure of a cubic system in a manner extending along a first non-dicing plane of the crystal structure; a step (S2) of forming an amorphous insulating layer on an inner peripheral surface of the first dividing groove; a step (S3) of supporting portions of the other main surface of the wafer located on both sides of the first dividing groove; and a step (S4) of pressing a tip portion of a cutting blade against the first dividing groove, thereby dividing the wafer in a fractured manner.

The application relates to a spinel-perovskite three-phase high-entropy ceramic powder material, which has a chemical formula of (A 1x A 2y A 3z A 4u A 5v )Mn2O4, wherein A1, A2, A3, A4 and A5 are four transition metal elements in Ca, Cu, Ni, Co, Zn and Mg and one rare earth element in La and Pr, the molar ratio of metal atoms is x:y:z:u:v:2, and x+y+z+u+v=1; the high-entropy ceramic powder material has two cubic crystal system spinel phases and a perovskite phase. The three phases of the high-entropy ceramic powder material coexist, have excellent wide-band emissivity and high-temperature thermal stability, and can be widely used as an infrared radiation material in high-temperature infrared radiation environments, such as aerospace thermal protection, industrial high-temperature kiln, power station boiler thermal management systems and the like.

A multilayer ceramic capacitor according to the present disclosure has a ceramic element body in which a plurality of dielectric layers and a plurality of internal electrode layers are laminated, wherein the dielectric layers include a ceramic material having a perovskite structure represented by formula (1), the perovskite structure includes an orthorhombic crystal structure and a cubic crystal structure, and, in the ceramic material, the ratio of the orthorhombic crystal structure to the cubic crystal structure (orthorhombic crystal structure / cubic crystal structure) is 1.3 or more.　Formula (1): ABO3 [In formula (1), A is one or more selected from the group consisting of Sr, Ba, and Ca; B is one or more selected from the group consisting of Hf, Zr, and Ti; and 0.9≤A / B≤1.1]

An electrode (12) and a storage device (11) are provided to reduce the decrease in fluidity during manufacturing. The electrode contains an oxide-based solid electrolyte, which is a powder (19) with a garnet-type crystal structure. The powder has a cubic crystal system and a lattice constant of 1.3 nm or more. The distance between atoms octahedral and dodecahedral coordinated with oxygen in the unit lattice of the powder can be 0.588 nm or more. The solid electrolyte may contain Li, La, Zr, Mg, and Sr as components. The storage device contains the electrode.

The invention relates to a modification method of an ammonium sulfate solid in the semiconductor industry, which comprises the following steps: (1) winnowing the ammonium sulfate solid in the semiconductor industry to obtain ammonium sulfate particles and volatile impurities; and (2) mixing the ammonium sulfate particles with a carboxylic acid crystal modifier, and then carrying out vacuum drying to obtain the crystal-transformed ammonium sulfate. According to the modification method provided by the invention, through winnowing, the ammonium sulfate solid is in a fluidized state, and volatile impurities are taken out along with gas, so that subsequent adsorption through activated carbon is facilitated; purified ammonium sulfate particles are mixed with a carboxylic acid crystal modifier to induce the crystal growth direction of ammonium sulfate to change, so that an original orthorhombic system is converted into a cubic system with higher stability, and the surface energy and hygroscopicity are reduced; the sodium content of the finally obtained crystal transformation ammonium sulfate is less than or equal to 0.05 wt%, the heavy metal content is less than or equal to 2ppm, the volatile impurity content is less than or equal to 0.005%, the crystal form is a cubic crystal system, the critical relative humidity at 25 DEG C is more than or equal to 85%, and no obvious deliquescence and caking exist after the crystal transformation ammonium sulfate is placed for 30 days.

This invention discloses a cubic fluorite-type terbium scandium tantalate magneto-optical crystal and its preparation method. The molecular formula of the crystal is Tb. 3‑ x Sc x TaO7, where x = 0.8~2, belongs to the cubic crystal system with space group Fm-3m. This invention involves doping small-radius Sc atoms into Tb3TaO7 crystals. 3+ Replace part of Tb 3+ This invention achieves a structural transformation of crystals from a low-symmetry orthorhombic phase to a high-symmetry cubic phase, and successfully grows high-quality bulk single crystals with centimeter-scale cubic phase using the Czochralski method. The crystals prepared by this invention exhibit good crystallinity, high quality, and excellent magneto-optical properties, showing promising application prospects in the fabrication of devices such as magneto-optical isolators, magneto-optical circulators, and magneto-optical modulators.

The invention relates to a high-entropy oxide ceramic without rare earth cations at A site. The chemical general formula of the high-entropy oxide ceramic is A2B2O7, wherein the A site is a combination of at least five elements of Mg, Ca, Sr, Cr, Mn, Fe, Co, Ni, Cu and Zn, and the molar ratio of the elements is greater than 10%; b site is one of Zr and Ce; the high-entropy oxide ceramic has one of a defective fluorite structure, a pyrochlore structure and a monoclinic phase structure and belongs to a cubic crystal system or a monoclinic system, and a space group is one of Fm-3m, Fd-3m and C2 / m. Meanwhile, the invention also discloses a preparation method of the high-entropy oxide ceramic. Through unique crystal structure diversity and performance regulation and control possibility brought by non-rare earth element combination, the infrared emissivity of the obtained high-entropy ceramic at the normal temperature of 0.78-25 [mu] m broadband is larger than 0.92, the infrared emissivity at the high temperature of 800 DEG C of 1-5 [mu] m waveband is larger than 0.90, and the high-entropy ceramic has potential application in the field of infrared radiation.

This composite catalyst comprises: a solid oxide catalyst provided with a stabilized zirconia support and an active metal supported on the stabilized zirconia support; and a zeolite. The stabilized zirconia support has a tetragonal and / or cubic crystal structure in which a stabilizing element forms a solid solution with zirconia, and the active metal includes Fe and an alkali metal. The zeolite includes at least a zeolite that has one skeleton structure selected from the group consisting of MFI structure, MOR structure, CHA structure, FER structure, AEI structure, BEA structure, and FAU structure.

The application is suitable for the technical field of electron backscatter diffraction crystallography characterization, and provides a non-cubic crystal system EBSD three-dimensional texture high-precision visual analysis method, which comprises seven core steps of crystallography modeling, EBSD data reading and orientation extraction, ODF calculation, IPF color key preprocessing and mapping, pole figure and inverse pole figure calculation, weak texture partition identification and standardized data output; the application, through complete non-cubic crystal system symmetry modeling, reduces the triclinic crystal system orientation calculation error to less than 5 degrees; through Lambert projection coordinate explicit output and standardized data protocol, the visual closedness and format barriers of commercial software are broken; through dynamic threshold partition, the weak texture detection lower limit is reduced to 5 degrees, and the sensitivity is improved by about 80% compared with the traditional method; the application has high precision, strong compatibility and low cost, and can be widely applied to EBSD texture characterization work in the fields of material science, metallurgy, geology and the like.

The invention discloses a cubic fluorite type potassium praseodymium calcium fluoride magneto-optical crystal material as well as a preparation method and application thereof, and belongs to the technical field of magneto-optical crystal materials. The chemical formula of the magneto-optical crystal is K < x > Ca < y > Pr < 1-x-y > F < 3-2x-y >, x is equal to 0.1 to 0.6, and y is equal to 0.1 to 0.7. The crystal belongs to a cubic system, and the space group is Fm3m. According to the invention, cubic-phase centimeter-level high-quality blocky single crystals are successfully grown by using a Bridgman-Stockbarger method. The method has the advantages of being good in crystal crystallinity, high in crystal quality, excellent in magneto-optical performance and the like, and is expected to be practically applied to preparation of devices such as magneto-optical isolators, magneto-optical circulators and magneto-optical modulators.

The application discloses a cubic fluorite-type terbium-tantalum-titanium magneto-optical crystal material and a preparation method thereof, and belongs to the technical field of magneto-optical crystal materials. (3‑x / 2) Ti x Ta (1‑x / 2) O7, wherein x=0.2-1.2. The crystal belongs to a cubic crystal system and has a space group of Fm3m. The application successfully obtains a cubic-phase centimeter-level single crystal Tb (3‑x / 2) Ti x Ta (1‑x / 2) O7 with high rare earth concentration by using a pulling method. The crystal has the advantages of high symmetry and excellent magneto-optical performance, and has a good application prospect in the preparation of devices such as a magneto-optical isolator, a magneto-optical circulator and a magneto-optical modulator.

The invention relates to the technical field of aqueous zinc ion batteries, and provides an aqueous zinc ion battery positive electrode material and a preparation method thereof. The cubic system Cu3VS4 aqueous zinc ion battery positive electrode material has a three-dimensional transmission tunnel suitable for zinc ion diffusion. The valence band formed by a 3d orbit of Cu is much shallower than that of a 3p orbit of S, and the Cu (I)-containing metal sulfide has a smaller band gap, so that higher electronic conductivity can be shown, and the electrochemical performance of the material is excellent. Besides, the defect that transition metal sulfide is unstable in water is converted into the advantage, conversion of the material from a crystalline state to an amorphous state is induced through an in-situ electrochemical process, the ion transmission path is further shortened, meanwhile, the volume change in the circulation process is restrained, and the performance of the material is improved. The positive electrode material shows excellent reversible capacity, rate and cycle performance, and the cycle stability of the Cu3VS4 aqueous zinc ion battery positive electrode material is improved.

The application relates to a multi-principal element doped low-thermal-conductivity high-entropy infrared radiation material, the thermal conductivity of the high-entropy infrared radiation material is <1 W·(m·k) ‑1 , the infrared emissivity in the 1-16 mu m wave band is >0.90; the chemical formula is A2B2O7, wherein A is at least three elements in La, Sm, Eu, Ni and Co, and the content of each element is between 20-34%; B is at least two elements in Ce, Zr, Cr and Mn, and the content of each element is between 25-50%. The high-entropy infrared radiation material has a defect fluorite or pyrochlore structure, belongs to a cubic crystal system, has high infrared emissivity, and has potential application value in the thermal protection field of aerospace vehicles, large energy equipment, industrial kilns, power station boilers and the like as a heat insulation material.

A method for measuring elastic constants of cubic crystal materials based on Brillouin scattering spectrum, comprising: S1. obtaining a spatial rotation angle of a cubic crystal material sample according to an angle of rotation of the cubic crystal material sample around a surface normal; S2. obtaining a Brillouin scattering spectrum of the cubic crystal material sample according to the spatial rotation angle, containing two Brillouin scattering characteristic peaks; S3. obtaining a frequency shift of the scattering peak by Lorentz fitting based on the Brillouin scattering spectrum characteristic peak; S4. calculating an experimental value of an acoustic characteristic curve of the cubic crystal material sample; and S5. fitting a theoretical value and the experimental value of the acoustic characteristic curve of the cubic crystal material to obtain a complete elastic constant tensor of the cubic crystal material. The method can improve the detection efficiency and realize nondestructive detection of the complete elastic constant tensor of the cubic crystal material.

This invention discloses a liquid thermoelectric material with low thermal conductivity n-type Ag4Sn0.5S2Te, its preparation method, and its application. The low thermal conductivity n-type Ag4Sn... 0.5 The chemical formula of S2Te-type liquid thermoelectric materials is Ag4Sn. 0.5 S2Te belongs to the cubic crystal system, space group; Ag4Sn 0.5 The chemical formula for creating Te vacancy defects in S2Te through thermoelectric performance optimization is Ag4Sn. 0.5 S2Te 0.92 The n-type Ag4Sn with low thermal conductivity 0.5 S2Te-type liquid thermoelectric materials consist of an anionic rigid framework composed of SnS4 tetrahedral units at the edge centers and Te atoms at the face centers, within which Ag ions move. This method employs a high-temperature vacuum solid-state synthesis technique to synthesize Ag4Sn materials. 0.5 S2Te exhibits 0.22–0.32 Wm at 300–823 K. ‑1 K ‑1 The material exhibits ultra-low thermal conductivity and is a uniformly molten compound that maintains a stable cubic phase in the range of 200–1100 K, modulated by Te vacancy defects and Ag4Sn. 0.5 S2Te 0.92 It achieves a thermoelectric figure of merit as high as 0.74, which is 95% higher than the intrinsic value.

A cutting tool comprising a rake face and a flank face, the cutting tool being composed of a substrate and a coating provided on the substrate, the coating including a MAlN layer, the MAlN layer including crystal grains of MxAl1-xN in the cubic crystal system, in the MxAl1-xN, a metal element M having an atomic ratio x of 0.2 or more and 0.8 or less, in the MAlN layer, M representing a metal element including titanium, chromium, or both, nR being 3 or less, where nR represents a number of voids at the rake face in the MAlN layer per 50 μm in length in a cross section of the MAlN layer obtained when the MAlN layer is cut along a plane including a normal to the rake face, the void having an area in cross section of 1.0×10−4 μm2 or more and 0.5 μm2 or less.