212 results about "Cubic crystal system" patented technology

A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure represented by ABO3 where site A includes Pb as a main component and site B includes a plurality of elements, wherein the perovskite type oxide includes a plurality of crystal phases selected from the group consisting of tetragonal, rhombohedral, orthorhombic, cubic, pseudo-cubic and monoclinic systems and the plurality of crystal phases are oriented in the direction of <100>.

The invention discloses a mixed crystal form ferric fluoride cathode material and a preparation method thereof. The chemical formula of the mixed crystal form ferric fluoride cathode material is (FeF3)x(FeF3.0.33H2O)y / C. The cathode material has the beneficial effects as follows: the product particle size can be optimized through controlling the reaction temperature and time, the obtained product purity is high, and a ferric fluoride preparation method is novel, simple and high in yield. The prepared ferric fluoride is in a mixed crystal form of a cubic system and an orthorhombic system, the ferric fluoride of the orthorhombic system is contributed to maintaining the stability of an FeF3 structure in processes of insertion / deinsertion of lithium ion, so that the cycling performance of the material is improved, and the ferric fluoride of the cubic system is contributed to improving the mass specific capability and thermal stability of the material. The (FeF3)x(FeF3.0.33H2O)y / C material prepared by the method has the advantages of small particle size, uniform distribution, good repeatability and excellent electrochemical performance.

The invention belongs to the electroluminescent device technical field, discloses a Perovskite light emitting diode and a preparation method thereof, and aims to solve the energy waste and consumption problems caused by a high light-up voltage of an existing perovskite diode; the Perovskite electroluminescent device structure comprises the following units arranged in sequence from bottom to top: a substrate layer, an anode layer, a cavity transmission layer, a modification layer, a luminescent layer, an electron transmission layer and an cathode layer; the luminescent layer comprises a luminescent material with the perovskite structure; the perovskite structure refers to an organic / inorganic hybrid ABX3 type cubic crystal system structure, wherein A refers to an organic amine group, B refers to the fourth main group metal, and X refers to a unary halogen or a multi-halogen combination.

A piezoelectric film element is provided, which is capable of improving piezoelectric properties, having on a substrate at least a lower electrode, a lead-free piezoelectric film, and an upper electrode, wherein at least the lower electrode out of the lower electrode and the upper electrode has a crystal structure of a cubic crystal system, a tetragonal crystal system, an orthorhombic crystal system, a hexagonal crystal system, a monoclinic crystal system, a triclinic crystal system, a trigonal crystal system, or has a composition in which one of these crystals exists or two or more of them coexist, and crystal axes of the crystal structure are preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and a ratio c / a′ is set in a range of 0.992 or more and 0.999 or less, which is the ratio of a crystal lattice spacing c in a direction of a normal line to the substrate surface, with respect to a crystal lattice spacing a′ whose inclination angle from the substrate surface is in a range of 10° or more and 30° or less.

A piezoelectric element includes a first electrode layer 14 provided on a substrate 11 and made of a noble metal to which at least one additive selected from the group consisting of Mg, Ca, Sr, Ba, Al and oxides thereof is added, an orientation control layer 15 provided on the first electrode layer 14 and made of a cubic or tetragonal perovskite oxide that is preferentially oriented along a (100) or (001) plane, and a piezoelectric layer 16 provided on the orientation control layer 15 and made of a rhombohedral or tetragonal perovskite oxide that is preferentially oriented along a (001) plane.

The invention discloses a white light LED, an enhanced light transfer powder, a phosphor powder and a method of producing phosphor powder that use a plurality of radiating color lights and include a white light nitride heterostructure. The invention provides a novel solid liquid of a luminescence material with a chemical formula BaαY3βAl2α+5βO4α+12β, where α and β have a value ranging 0.1˜4. The crystal lattice structure of the phosphor powder varies from cubic crystal system to monoclinic crystal system accroding to the change of the ratio of α and β. It shows significant yellow color and yellowish orange color and has very high quantum light emitting efficiency and enduring light emitting time. In such novel phosphor powder base, the invention further develops an enhanced light transfer apparatus that is a blue light heterostructure emiting a raidaion with a wavelength λ=450˜475 nm and comprised of polymers and phosphor powder particles filled therein, and the concentration of phosphor powder is 1%˜50%. The novel white semiconductor source has a very high light intensity (I>100 cd) and luminous flux, and its light emitting efficiency is up to 501 m / w.

The invention relates to a high purity linear silicon carbide powder and a preparation method, the linear silicon carbide powder product presents light green color and has a cubic crystal system, a microstructure presents a linear state, and the content of the silicon carbide is no less than 99%. The preparation method provided by the present invention comprises the following steps: silica sol and oxidized graphene are uniformly mixed, then subjected to ultrasonic treatment, and completely stirred to obtain a composite precursor. The composite precursor is subjected to solidification, drying and grinding to obtain a powdery precursor with fine and uniform quality. Argon is introduced in the powdery precursor, a carbon thermal reduction is carried out under high temperature in a high temperature tubular furnace to obtain the carbonized silicon powder crude product; the carbonized silicon powder crude product is immersed in inorganic acid and then the pumping filtration is carried out, the unreacted carbon is removed, and cooled to obtain the silicon carbide powder with content of less than 99%. According to the invention, a silicon source is silica sol, a carbon source is oxidized grapheme, the invention has the advantages of no requirement of subsequent processing, no requirement of pressurization, addition of metal catalyst, simple process and short production period; the precursor with homogeneousness is prepared in advance, then the carbon thermal reduction is carried out, the product purity is high, and the method provided by the invention enables large-scale industrial production.

The invention relates to a rare earth oxide crystal and a preparation method thereof. The structural general formula of the crystal is (LnxRe1-x)2O3, the crystal belongs to a cubic crystal system, the space group is Ia3, and the crystal is in a bixbyite structure. The preparation method of the rare earth oxide laser crystal comprises the following steps of: firstly, manufacturing polycrystalline materials by taking Re2O3 and Ln2O3 as raw materials; then, manufacturing material bars; and filling the material bars into an optical floating zone growing furnace for growing according to a floating zone method. The method of the invention has high speed and short cycle, a crucible is not needed in crystal growth, the pollution on the crystal is reduced, and the growing crystal has high transparency and less cracks and is suitable for laser devices.

The invention relates to a chemical mechanical polishing abrasive particle CeO2 and a method for preparing the same, belonging to the rare earth powder material chemical preparation technical field. The invention is to prepare the CMP abrasive particle by utilization of cerous inorganic salt solution and homogeneous precipitation agent. The method comprises the following steps that: the cerous inorganic salt and the precipitation agent are prepared into solution with certain proportion; the solution is uniformly mixed through ultrasonic vibration; deposits are generated after the solution is heated to a certain temperature; serum is kept stand, aged, filtered and calcined, and then the CeO2 abrasive particle is prepared. The method also accelerates the nucleation rate through addition of surface active agent so as to reduce the reaction temperature, and simultaneously the nodulizing degree of the abrasive particle obtained is also good. The method prepares the CMP abrasive particle, wherein, the CMP abrasive particle belongs to the single-phase cubic crystal system; the space group is O<5>H-FM3M; the dispersibility is good; the grain fineness distribution is uniform; the shape is similar to a sphere; and the specific surface area BET is more than 0 and less than 50m<2> / g.

The invention discloses a photovoltaic material with a thin-layer perovskite structure and a preparation method for the photovoltaic material, belongs to the field of the photovoltaic material, and particularly belongs to the field of the photovoltaic material with the perovskite structure. An inducer is added in a synthetic process of a crystal with a perovskite structure at a proper temperature and pH value to enable the original crystal with a cubic crystal system perovskite structure to distort so as to obtain a crystal with a thin-layer stacked perovskite structure. The preparation method provided by the invention is simple in process and easy to operate; the obtained crystal with the thin-layer stacked perovskite structure is high in electron transmission efficiency; and when the photovoltaic material with the thin-layer perovskite structure is applied to a solar cell, the solar cell is high in photoelectric conversion rate; and in addition, the photovoltaic material is low in electron loss and high in transmission efficiency.

The invention relates to a vanadate garnet type fluorescent material as well as a preparation method and the application thereof, belonging to the field of vanadate inorganic luminescent materials and aiming at solving the technical problem of providing a wideband-emission fluorescent material with wide excitation spectrum range and high luminescent strength. The vanadate garnet type fluorescent material comprises the components: A(2-2x)K(1+x)NxM2V3O12, wherein x is more than or equal to 0 and less than or equal to 0.1, A is selected from at least one of Ca, Sr and Ba, M is selected from at least one element of Mg and Zn, and N is selected from at least one element of Ce, Pr, Sm, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm and Bi. The fluorescent material belongs to a garnet-type structure in a cubic system and has high luminescent strength and wide excitation spectrum band, and an emission spectrum is emitted by a wideband for covering the whole visible light region. The invention can be widely used in systems of electron, information, traffic, energy sources and illumination and has more remarkable superiority in the application of fourth-generation solid luminescent devices excited by purple light or long-wave ultraviolet light emitted by purple light or ultraviolet light-emitting diodes.

A translucent ceramic having a high linear transmittance and a high refractive index, substantially not causing double refraction, and exhibiting a high anomalous dispersion has a pyrochlore compound represented by the general formula AxByOw (wherein 1.00≦x / y≦1.10 and w represents a positive number maintaining electroneutrality) as a main component. The main component has a cubic crystal system. Preferably, the A site comprises a trivalent metallic element, and the B site comprises a tetravalent metallic element. More preferably, A is at least one of La, Y, Gd, Yb, and Lu, and B is of at least one of Ti, Sn, Zr, and Hf. The translucent ceramic is useful as a material of, for example, an objective lens used in an optical pickup.

The invention relates to Ag@Ag2O microcrystals of a photocatalytic material with specific patterns and high surface activity and a preparation method thereof. The Ag@Ag2O microcrystals of the photocatalytic material are made of a compound photocatalytic material with the corresponding patterns formed by depositing silver nano particles at the surfaces of silver oxide particles with different patterns. The Ag@Ag2O microcrystals of the photocatalytic material with the specific patterns and high surface activity and the preparation method thereof are characterized in that silver oxide is in a cubic crystal system, the particle size is 0.5 to 2.0mum, and the particle size of the silver nano particles deposited at the surfaces is 20 to 30nm; and the silver oxide particles have one of the 5 following patterns: a cubic block, a rhombohedral dodecahedron, an octahedron, a 18-faced body or a 26-faced body. The invention also provides a preparation method of Ag@Ag2O. By exposing the crystal face of Ag2O, which has different surface energy, and loading silver deposited at the surface of the Ag2O, the Ag@Ag2O photocatalytic material disclosed by the invention has high surface activity, the preparation method is simple, the reaction condition is mild, the operation is convenient, and the energy consumption is little.

An aerosol of a powder composed of helium carrier gas and particles of a hexagonal aluminum nitride is charged through a transfer pipe 3 into a film deposition chamber 4 whose interior is depressurized by gas evacuation using a vacuum pump 5 to maintain a degree of vacuum of 200-8000 Pa during supply of the carrier gas and the aerosol is blown from a nozzle 6 provided on the end of the transfer pipe 3 inside the film deposition chamber 4 to impinge on a substrate fastened to a substrate holder 7 to make the impact force of the particles at collision with the substrate 4 GPa or greater, thereby transforming the crystal structure of the aluminum nitride from hexagonal to cubic to deposit cubic aluminum nitride on the substrate. As a result, a method of transforming the crystal structure of a Group XIII nitride is provided that enables transformation of a Group XIII nitride to cubic crystal structure using a system of simpler configuration than that used for transforming the crystal structure of a Group XIII nitride by a static pressure application process.

The invention discloses cerium oxide polishing powder. The purity TREO of cerium oxide CeO2 is more than or equal to 99.95%; cerium oxide is CeO2 powder with crystal form being a uniphase cubic crystal system; cerium oxide is shaped like a round cake with the average particle size of 1mum. The invention further discloses a preparation method for the cerium oxide polishing powder. The preparation method comprises the steps of preparation of cerium chloride, precipitation, dehydration, roasting, smashing and the like. Compared with the existing preparation method, the polishing powder prepared by adopting the method is cerium oxide powder, F is not required for introduction in the preparation process, and the preparation method has the advantages of being simple in process, low in cost, and free from waste water; the cerium oxide polishing powder has the advantages of having no scratch in the polishing process of products, being high in polishing precision and the like.

The invention discloses a sodalite porous coordination polymer material as well as a preparation method and application thereof. The sodalite porous coordination polymer material has a chemical formula of [Zn(mtz)2-x(mim)x] infinity (0<=x<2), wherein mtz is a deprotoned 3-methyl-1,2,4-triazole anion, and mim is a deprotoned 2-methylimidazole anion. The polymer material is crystallized in a cubic system and in an I-43m space group, the length of an alpha axis is 1.70 nm, the divalent zinc ion is quadridentate, mim is bidentate, and mtz is bidentate; and a nitrogen atom is not coordinated. The sodalite porous coordination polymer material has a sodalite three-dimensional coordination network structure and a cesium chloride three-dimensional pore canal with a pore ratio of 50%, and has good thermal stability and chemical stability; and the Langmuir specific surface is greater than 1800 m<2> / g, and various gases and vapor can be absorbed effectively. The sodalite porous coordination polymer material can be used for storing, separating, catalyzing and sensing materials, performing molecular recognition and heat exchange, and the like on materials by absorbing guest molecules.

The invention discloses a non-linear optical material, namely a lead bismuth phosphate crystal, and relates to the field of non-linear optical materials. A chemical formula of lead bismuth phosphate is Pb3Bi (PO4)3; the molecular weight is 2230.98; the lead bismuth phosphate belongs to a cubic crystal system; the space group is I43d; and single-cell parameters, namely alpha, beta and gamma are 90.00 degrees, and Z is equal to 2. The lead bismuth phosphate crystal is prepared by adopting a high-temperature solid-state method. The lead bismuth phosphate has excellent non-linear optical performance; a powder secondary harmonic generation (SHG) coefficient of the lead bismuth phosphate is three times that of potassium dihydrogen phosphate (KDP); and the lead bismuth phosphate crystal can be used for deep water communication of submarines, laser blinding weapons, marine fish detection, optical disk recording, color laser printing, laser projection televisions, and optical computing or optical fiber communication.

The invention relates to a preparation method for nano active CaCO3 as special sealing material, which comprises: preparing lime milk, adding control agent for crystal system, taking carbonization reaction, activating the slurry, separating the solid from liquid to dry, smash, depolymerize, grade, screen and pack; finally, obtaining the product. Wherein, the product has 40~60nm size, cubic crystal system, and more than 25m2 / g BET specific surface area. This invention is convenient to control the technical parameters, has stable quality, and can complete replace the gas-phase white carbon black and imported SiO2 to reduce cost and bring great economic benefit.

An aerosol of a powder composed of helium carrier gas and particles of a hexagonal aluminum nitride is charged through a transfer pipe 3 into a film deposition chamber 4 whose interior is depressurized by gas evacuation using a vacuum pump 5 to maintain a degree of vacuum of 200-8000 Pa during supply of the carrier gas and the aerosol is blown from a nozzle 6 provided on the end of the transfer pipe 3 inside the film deposition chamber 4 to impinge on a substrate fastened to a substrate holder 7 to make the impact force of the particles at collision with the substrate 4 GPa or greater, thereby transforming the crystal structure of the aluminum nitride from hexagonal to cubic to deposit cubic aluminum nitride on the substrate. As a result, a method of transforming the crystal structure of a Group XIII nitride is provided that enables transformation of a Group XIII nitride to cubic crystal structure using a system of simpler configuration than that used for transforming the crystal structure of a Group XIII nitride by a static pressure application process.

The invention discloses a ferromagnetic semiconductor crystal and a preparation method thereof. The material of the semiconductor crystal is LiY(Zn1-xMnx)As, wherein y is more than 0.5 and less than 1.5, x is more than 0 and less than 0.5, and x and y represent the percentages of atoms. The invention further provides a high-pressure synthesizing method of the LiY(Zn1-xMnx)As crystal, which is a method for preparing LiY(Zn1-xMnx)As in the pressure scope of 0-20 GPa at a temperature of 600-1000 DEG C. The LiY(Zn1-xMnx)As semiconductor crystal prepared by the method disclosed by the invention has a ferromagnetic transition temperature of below 50K in specific components, belongs to a cubic system, has a space group of F-43 m, and has an important physical significance to research on the magnetic mechanisms of the ferromagnetic semiconductors.

The invention relates to a method for preparing a copper selenide nano-material by using Pantoea agglomerans. The copper selenide nano-material with three different stoichiometric ratios is prepared by adjusting the amount of a chemical reducing agent NaBH4 in a solution. When a ratio of n(EDTA-Cu):n(NaBH4) in a working medium solution is not greater than 4-8:1, the product is a Cu2Se nanosphere, and belongs to a tetragonal system, the primary sediment size is 20nm, and the secondary sediment size is 50-100nm; when the ratio of n(EDTA-Cu):n(NaBH4) in a working medium solution is greater than 4-8:1, the product is a CuSe nanosphere, and belongs to a hexagonal system, and the particle size is 100-200nm; and when the solution does not contain NaBH4, the product is a Cu2-xSe nanosphere, and belongs to a cubic system, and the particle size is uniform and is about 80nm. The problems of high cost, large energy consumption and environmental pollution existing in present copper selenide preparation methods are solved in the invention.

The invention relates to the technical field of light engineering and chemical engineering materials, in particular to a metal-organic framework material and a synthetic method thereof. The chemical formula of the metal-organic framework material is Zr6C168H182N4O40S24, and the metal-organic framework material adopts a cubic system crystal structure. The synthetic method of Zr6C168H182N4O40S24 comprises the following steps: step 1, synthesizing 2'5'-dimercapto-p-terphenyl-4,4'-dicarboxylic methanoate; step 2, synthesizing 2'5'-diethyl sulfide-s-methyl-p-terphenyl-4-4'-dicarboxylic methanoate; step 3, synthesizing a ligand, namely 2'5'-diethyl sulfide-s-methyl-p-terphenyl-4-4'-dicarboxylic acid; step 4, carrying out reaction between the ligand and zirconium tetrachloride to finally synthesize the colorless octahedronlike crystalline metal-organic framework material. The metal-organic framework material can be used for loading nobel metallic ions and heavy metal ions.

A process for preparing the cubic crystal type FeS2 film by electric deposition, oxidizing and thermal sulfurizing includes such steps as electrically depositing Fe-S compound film on the electrically conductive glass subtrate in the aqueous solution of FeSO4 and Na2S2O3, oxidizing to obtain the precurse Fe3O4 film, and isothermal treating at 350-450 deg.C of sulfurizing temp to obtain cubic crystal type FeS2 film.

The invention relates to the technical field of the quantity transmission of the measuring and testing standard. Particularly, the invention relates to a cerium dioxide microsphere used as a dimension standard material. The cerium dioxide microsphere is an inorganic-organic hybrid microsphere and consists of cerium dioxide and polyvinylpyrrolidone molecules, wherein the weight ratio of cerium dioxide to polyvinylpyrrolidone is 11-16:1; the inorganic-organic hybrid microsphere is of a polycrystalline structure and belongs to the cubic system; the crystal structure is fluorspar structure; the structure cell is of a face-centred cubic structure; the shape factor of the microsphere is less than 1.2; and the relative uncertaitny of the dimension value is less than 5 percent. The cerium dioxide microsphere in the submicron / nano level, which is provided by the invention and is used as the granularity standard material, has the advantages of large proportion, high temperature resistance and acid and alkali resistance, does not swell in the organic solvent, is not easy to be eroded by germs and has the specific crystal structure.

The invention provides silicate fluorescent ceramic with a full-spectrum emission effect. The chemical formula of the silicate fluorescent ceramic is shown as following: Ca3-x-y-z-mCexPryMnzNamSc2Si3O12 (I), wherein x is greater than or equal to 0.001 and less than or equal to 0.2, y is greater than or equal to 0 and less than or equal to 0.1, z is greater than or equal to 0.03 and less than or equal to 0.4, and m is greater than or equal to 0 and less than or equal to 0.3. The silicate fluorescent ceramic adopts a garnet crystal structure, belongs to a cubic crystal system, and has a space group of Ia3d. The silicate fluorescent ceramic provided by the invention is stable in physicochemical property; under the effective excitation of blue light, the emission wavelength scope of the silicate fluorescent ceramic is broad; blue-green light, yellow light, red light and deep-red light are covered in the spectrum; a low-color-temperature high-color-rendering white-light LED can be manufactured by using such single fluorescent ceramic, namely the silicate fluorescent ceramic; the problem about reabsorption caused by the mixing of multi-color fluorescent powder can be solved; the silicate fluorescent ceramic can be applied to high-power blue-light LEDs or LD pumping white-light LEDs; and the high-end display and illumination requirements can be met.

The invention relates to a solid desulfurating agent, comprising an active constitute cubic system crystalline phase Fe3O4, amorphism Fe2O3 and amorphism Fe2O3.H2O, and a paste product which is obtained from the reaction of assistant binder ferrous sulphate salt and calcium hydroxide; the invention further disclose a preparation method of the solid desulfurating agent on the basis of disclosing the constitutes of the solid desulfurating agent. The side pressure strength of the solid desulfurating agent prepared by the method in the invention can be as high as 85N / cm, and can be widely applied to the desulfurating technique of high temperature coal gasification materials.

Provided is a semiconductor device containing a silicon single crystal substrate 101, a silicon carbide layer 102 provided on a surface of the substrate, a Group III nitride semiconductor junction layer 103 provided in contact with the silicon carbide layer, and a superlattice-structured layer 104 constituted by Group III nitride semiconductors on the Group III nitride semiconductor junction layer. In this semiconductor device, the silicon carbide layer is a layer of a cubic system whose lattice constant exceeds 0.436 nm and is not more than 0.460 nm and which has a nonstoichiometric composition containing silicon abundantly in terms of composition, and the Group III nitride semiconductor junction layer has a composition of AlxGaYInzN1-αMα (0≦̸X, Y, Z≦̸1, X+Y+Z=1, 0≦̸α<1, M is a Group V element except nitrogen).

The present invention provides an ultraviolet and stain resistant natural stone paint and a preparation method thereof. The ultraviolet and stain resistant natural stone paint comprises TiO2@Ti0.75(OH)1.5Cl1.5 nano-particles, a base material, an aggregate, an auxiliary material and deionized water. The TiO2@Ti0.75(OH)1.5Cl1.5 nano-particles are core-shell structures, cores are TiO2, shells are Ti0.75(OH)1.5Cl1.5, and an air layer is arranged between each core and the corresponding shell. Crystals of TiO2@Ti0.75(OH)1.5Cl1.5 belong to a cubic crystal system, a space group is Pn'3m, cell parameters are a=b=g=7.638(3)[Angstrom], a=b=c=90 degree, a cell volume is 445.59(2)[Angstrom]<3>, Z=8, Ti, OH and Cl form an octahedronal structure, wherein Ti is located in the center of the octahedron, and OH and Cl are distributed disorderly in the octahedron.

Disclosed is a heat-shielding coating material having a lower thermal conductivity than that of rare-earth-stabilized zirconia. Specifically disclosed is a heat-shielding coating material mainly composed of a compound represented by compositional formula (1): Ln1-xTaxO1.5+x [wherein x fulfils the following formula: 0.13<=x<=0.24; and Ln represents at least one element selected from the group consisting of Sc, Y and lanthanoid elements]. Also specifically disclosed is a heat-shielding coating material mainly composed of a compound represented by compositional formula (2): Ln1-xNbxO1.5+x [wherein x fulfils the following formula: 0.13<=x<=0.24; and Ln represents at least one element selected from the group consisting of Sc, Y and lanthanoid elements]. Further specifically disclosed is a heat-shielding coating material mainly composed of a cubic compound having a fluorite structure and represented by compositional formula (3):Ln3NbO7 [wherein Ln represents at least one element selected from the group consisting of Sc, Y and lanthanoid elements].

The invention relates to a preparation method of an anti-purple-halo transparent ceramic panel for replacing sapphires. A transparent ceramic is a cubic crystal system and comprises AlON based ceramics, Y2O3 based ceramics, Spinel based ceramics and YAG based ceramics. The preparation method of the transparent ceramic comprises the following steps: adding a certain amount of sintering additives, binding agents, dispersing agents, liquid media, grinding balls and / or rare earth oxides into ceramic powder, performing ball-milling, uniformly mixing, then performing tape casting molding, or performing slip casting molding, or performing gel casting molding, or performing injection molding, or performing dry-pressing molding to obtain a ceramic biscuit, degreasing a molded biscuit, and then sintering to obtain the ceramic; and performing annealing, polishing and anti-reflection film coating treatment on the obtained ceramic to obtain the transparent ceramic panel of which the transmittance is about 95%. The transparent ceramic panel disclosed by the invention does not need cutting processing, is easily-controllable in shape, can be used for simplifying a processing technique, also is short in ceramic production cycle, and ensures that the productivity can be improved and the cost can be reduced.