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194 results about "Structural transformation" patented technology

Multiple bit chalcogenide storage device

Multi-terminal chalcogenide memory cells having multiple binary or non-binary bit storage capacity and methods of programming same. The memory cells include a pore region containing a chalcogenide material along with three or more electrical terminals in electrical communication therewith. The configuration of terminals delineates spatially distinct regions of chalcogenide material that may be selectively and independently programmed to provide multibit storage. The application of an electrical signal (e.g. electrical current or voltage pulse) between a pair of terminals effects a structural transformation in one of the spatially distinct portions of chalcogenide material. Application of electrical signals to different pairs of terminals within a chalcogenide device effects structural transformations in different portions of the chalcogenide material. The structural states produced by the structural transformations may be used for storage of information values in a binary or non-binary (e.g. multilevel) system. The selection of terminals provides for the selective programming of specific and distinct portions within a continuous volume of chalcogenide material, where each selectively programmed portion provides for the storage of a single binary or non-binary bit. In devices having three or more terminals, two or more selectively programmable portions are present within the volume of chalcogenide material occupying the pore region and multibit storage is accordingly realized. The instant invention further includes methods of programming chalcogenide memory cells having three or more terminals directed at the storage of multiple bits of information in binary or non-binary systems.
Owner:OVONYX MEMORY TECH LLC

Multiple bit chalcogenide storage device

Multi-terminal chalcogenide memory cells having multiple binary or non-binary bit storage capacity and methods of programming same. The memory cells include a pore region containing a chalcogenide material along with three or more electrical terminals in electrical communication therewith. The configuration of terminals delineates spatially distinct regions of chalcogenide material that may be selectively and independently programmed to provide multibit storage. The application of an electrical signal (e.g. electrical current or voltage pulse) between a pair of terminals effects a structural transformation in one of the spatially distinct portions of chalcogenide material. Application of electrical signals to different pairs of terminals within a chalcogenide device effects structural transformations in different portions of the chalcogenide material. The structural states produced by the structural transformations may be used for storage of information values in a binary or non-binary (e.g. multilevel) system. The selection of terminals provides for the selective programming of specific and distinct portions within a continuous volume of chalcogenide material, where each selectively programmed portion provides for the storage of a single binary or non-binary bit. In devices having three or more terminals, two or more selectively programmable portions are present within the volume of chalcogenide material occupying the pore region and multibit storage is accordingly realized. The instant invention further includes methods of programming chalcogenide memory cells having three or more terminals directed at the storage of multiple bits of information in binary or non-binary systems.
Owner:OVONYX MEMORY TECH LLC

Multiple bit chalcogenide storage device

Multi-terminal chalcogenide memory cells having multiple binary or non-binary bit storage capacity and methods of programming same. The memory cells include a pore region containing a chalcogenide material along with three or more electrical terminals in electrical communication therewith. The configuration of terminals delineates spatially distinct regions of chalcogenide material that may be selectively and independently programmed to provide multibit storage. The application of an electrical signal (e.g. electrical current or voltage pulse) between a pair of terminals effects a structural transformation in one of the spatially distinct portions of chalcogenide material. Application of electrical signals to different pairs of terminals within a chalcogenide device effects structural transformations in different portions of the chalcogenide material. The structural states produced by the structural transformations may be used for storage of information values in a binary or non-binary (e.g. multilevel) system. The selection of terminals provides for the selective programming of specific and distinct portions within a continuous volume of chalcogenide material, where each selectively programmed portion provides for the storage of a single binary or non-binary bit. In devices having three or more terminals, two or more selectively programmable portions are present within the volume of chalcogenide material occupying the pore region and multibit storage is accordingly realized. The instant invention further includes methods of programming chalcogenide memory cells having three or more terminals directed at the storage of multiple bits of information in binary or non-binary systems.
Owner:OVONYX MEMORY TECH LLC

Chemical metallurgy method for extracting beryllium oxide from chrysoberyl

InactiveCN103088206AFully consider the protectionFully consider the comprehensive utilizationProcess efficiency improvementWater vaporDump leaching
The invention discloses a chemical metallurgy method for extracting beryllium oxide from chrysoberyl. The chemical metallurgy method is a comprehensive treatment technology for carrying out chemical metallurgy on refractory chrysoberyl with not more than 0.5% of Be. The chemical metallurgy method is characterized by comprising the following steps of: carrying out structural transformation roasting on the minerals by using ammonium fluosilicate as a structural transforming agent in the presence of activator limestone; cooling the roasted minerals and using water to spray dump leaching beryllium; precipitating beryllium for the ammonium fluoroberyllate solution by using ammonium bicarbonate to obtain basic beryllium carbonate; calcining the basic beryllium carbonate to release carbon dioxide and water vapor to obtain the product beryllium oxide; and concentrating and crystallizing a beryllium-precipitated solution which is the beryllium fluoride solution under reduced pressure, and drying the concentrated and crystallized solution in air flow to obtain the product ammonium fluoride. The chemical metallurgy method disclosed by the invention is simple in process, low in price, free of pollution, high in metal recovery rate, low in production cost and capable of effectively separating and extracting beryllium in the chrysoberyl.
Owner:戴元宁

SCR denitration device and denitration method applicable to middle and small-size boilers

The invention discloses a SCR (Selective Catalytic Reduction) denitration device and a denitration method applicable to middle and small-size boilers. Through structural transformation of an economizer inside a vertical flue, a part of a heated surface is preserved, the other part of the heated surface is moved to a horizontal section of the flue, the rest flue is partitioned in an inclined manner so as to be used for elicitation and introduction of the denitration device; a two-stages dedusting ammonia injection system is arranged so as to mix fume with ammonia, the mixture passes through a catalyst preserved layer and enters a SCR reactor for catalysis reaction, most part of NOx is transformed into N2, the fume after denitration is elicited out from two sides of the lower part of the reactor, enters the flue from two sides of a side wall of the flue at the tail part, and is finally discharged outside the flue through an air pre-heater. The SCR denitration device meets the requirement on the space where the denitration flue needs to be pulled out and led in when the SCR denitration device is additionally arranged on the middle and small-size boilers, sufficient, rapid and effective mixing of ammonia and fume inside a low narrow flue is achieved, and the SCR denitration device has the advantages that the denitration system is compact in structure, high in efficiency, low in catalyst abrasion, and the like.
Owner:SOUTHEAST UNIV

Multiple bit chalcogenide storage device

Multi-terminal chalcogenide memory cells having multiple binary or non-binary bit storage capacity and methods of programming same. The memory cells include a pore region containing a chalcogenide material along with three or more electrical terminals in electrical communication therewith. The configuration of terminals delineates spatially distinct regions of chacogenide material that may be selectively and independently programmed to provide multibit storage. The application of an electrical signal (e.g. electrical current or voltage pulse) between a pair of terminals effects a structural transformation in one of the spatially distinct portions of chalcogenide material. Application of electrical signals to different pairs of terminals within a chalcogenide device effects structural transformations in different portions of the chalcogenide material. The structural states produced by the structural transformations may be used for storage of information values in a binary or non-binary (e.g. multilevel) system. The selection of terminals provides for the selective programming of specific and distinct portions within a continuous volume of chalcogenide material, where each selectively programmed portion provides for the storage of a single binary or non-binary bit. In devices having three or more terminals, two or more selectively programmable portions are present within the volume of chalcogenide material occupying the pore region and multibit storage is accordingly realized. The instant invention further includes methods of programming chalcogenide memory cells having three or more terminals directed at the storage of multiple bits of information in binary or non-binary systems.
Owner:ENERGY CONVERSION DEVICES INC

Halogen anion doped lithium-rich positive electrode material as well as preparation method and application of positive electrode material

The invention relates to a halogen anion doped lithium-rich positive electrode material of a secondary battery as well as a preparation method and an application of positive electrode material. The expression formula of the halogen anion doped lithium-rich positive electrode material is Li[Li(1-2x)/3MxMn(2-x)/3]O2-zAz, wherein M is at least one or a combination of Co, Ni, Al, Mg, Zn, Ga, B, Zr, Ti, Ca, Ce, Y and Nb, A is at least one or a combination of Cl, Br or I, x is greater than 0 and less than 0.5, and z is greater than 0 and less than or equal to 0.5; when M is one or the combination of Ni and Co and A is Cl, x is not equal to 0.2. The preparation method comprises the following preparation steps: in the process of preparing a lamellar lithium-rich oxide positive electrode material Li[Li(1-2x)/3MxMn(2-x)/3]O2, introducing halogen anions A according to the stoichiometric ratio to prepare a solution, and then carrying out solidification, drying and calcination, thereby obtaining the halogen anion doped lithium-rich positive electrode material. If the halogen anion doped lithium-rich positive electrode material is used as the positive electrode material for a lithium battery, the first charge-discharge efficiency of the material can be improved; the structural transformation of the material in electrochemical cycle is inhibited. The electrochemical properties of the lithium-rich lamellar oxide positive electrode material are improved, and the lithium-rich lamellar oxide positive electrode material has the characteristics of high first charge-discharge efficiency, high capacity, good cycle performance, simple preparation process, good reproducibility and the like.
Owner:NANKAI UNIV

Quenching-tempering heat treatment method for large-scale module die steel

InactiveCN108866285ARelieve transition stressGuaranteed HardeningWater coolingMartensite
The invention discloses a quenching-tempering heat treatment method for large-scale module die steel. The method comprises the following steps of carrying out heating; carrying out heat preservation;carrying out water-cooling and air-cooling alternate quenching multiple times; and carrying out high-temperature tempering. The method has the advantages that a water-quenching air-cooling mode is adopted, water-lifting air-cooling is carried out multiple times, self-tempering is carried out, the surface structural transformation stress is eliminated, the cooling strength is within oil quenching and water quenching, and therefore through quenching of a large-scale module is ensured, and meanwhile, water-quenching cracking is avoided; the perlitic transformation caused by water quenching is avoided, then water lifting is carried out multiple times to decrease the cooling speed, so that the quenching stress is decreased, and therefore the cooling speed of a high-temperature section is increased, and meanwhile, quenching cracking is also prevented; and when the temperature of martensite cooled to 1.2738 begins to change temperature, air cooling is carried out, so that the forming speed ofthe martensite is decreased, and therefore the structural stress can be greatly decreased, and cracking of a low-temperature section can be avoided.
Owner:武钢集团襄阳重型装备材料有限公司
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