The invention relates to a method for growing a
large size Ta2O5
single crystal by using a floating zone method, and belongs to the field of
crystal growth. The method comprises the following steps: carrying out ball milling and
drying for a Ta2O5
powder material; placing the treated Ta2O5
powder material in a rubber tube, and carrying out isostatic pressing for the material to prepare a biscuit rod; carrying out
sintering for the biscuit rod to obtain a polycrystalline rod; adopting the biscuit rod or the polycrystalline rod as the material rod, and adopting the polycrystalline or the Ta2O5
single crystal as the
seed crystal, wherein the
seed crystal and the material rod form a straight line in a vertical direction, and the contact point and a
halogen lamp are at the same horizontal line; heating the material rod and the
seed crystal until the material rod and the seed
crystal are molten, wherein the heating rate is 30-60 DEG C per minute; adjusting the rotation speeds and the rotation directions of the material rod and the seed
crystal, then carrying out
inoculation; adopting the movement of a focusing lens or the up and down movement of the rod to enable the molten zone to be far away from the focusing point, enable the temperature of the molten zone to be decreased to realize the
crystallization, wherein the
crystal growth rate is 10-60 mm / h; cooling the grown crystal to the
room temperature. With the method provided by the present invention, the growth period is short; the preparation efficiency is high; the Ta2O5
single crystal can be rapidly grown, wherein the grownTa2O5 single crystal has characteristics of size in
centimeter magnitude, no macroscopic defect and high quality.