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85results about How to "Structural defect" patented technology

Brightness enhancement film having curved prism units and light scattering particles

A brightness enhancement film includes a substrate, a plurality of curved prism units and a plurality of light scattering particles. The curved prism units are extended in parallel and formed on a first surface of the substrate. Each of the curved prism units includes at least one meandering surface to provide with changes in curvature. Thus, the meandering surface of the curved prism unit is able to refract incident light in two dimensions with respect to the substrate that may enhance entire light-collecting efficiency in two dimensions. The light scattering particles are disposed in the curved prism units.
Owner:EFUN TECH CO LTD

Semiconductor device

A semiconductor device includes at least two fin-shaped structures, a gate structure, at least two epitaxial structures and a silicon cap. The fin-shaped structures are disposed on a substrate and are covered by the gate structure. The epitaxial structures are disposed at one side of the gate structure and respectively directly contact each fin-shaped structure, wherein the epitaxial structures are spaced apart from each other. The silicon cap simultaneously surrounds the epitaxial structures.
Owner:MARLIN SEMICON LTD

Silicon carbide single crystal and a method for its production

A bulk silicon carbide single crystal of good crystalline quality which includes a minimized number of structural defects and is free from micropipe defects can be produced by crystal growth in a melt of an alloy comprising Si, C, and M (wherein M is either Mn or Ti) and having an atomic ratio between Si and M in which the value of x, when express as Si1-xMx, is 0.1≦×≦0.7 in the case where M is Mn or 0.1≦×≦0.25 in the case where M is Ti at a temperature of the melt which is below 2000° C. The C component is preferably supplied into the melt by dissolution of a graphite crucible which contains the melt such that the melt is free from undissolved C. One method of crystal growth is performed by cooling the melt after a seed substrate is immersed in the melt.
Owner:NIPPON STEEL CORP

Method for vocal cord reconstruction

A method for surgical repair of damaged or diseased head and neck tissues is described. In one aspect of the invention tissue graft constructs comprising vertebrate submucosa or vertebrate basement membrane materials are used to repair and promote growth of endogenous vocal cord tissue.
Owner:CLARIAN HEALTH PARTNERS

Electronic component and method for manufacturing the same

In an electronic component, an active chip element and a passive chip element are respectively enclosed within first and second resin layers, which are separately disposed on upper and lower surfaces of a core substrate, respectively. The first resin layer includes a shielding metal film disposed on an upper surface thereof and a first via-hole conductor which connects the shielding metal film with a circuit pattern provided on the core substrate. The second resin layer includes an external-terminal electrode disposed on a lower surface thereof and a second via-hole conductor which connects the external-terminal electrode with a circuit pattern provided on the core substrate.
Owner:MURATA MFG CO LTD

Nickel powder, conductive paste, and multilayer electronic component using same

A nickel powder with a mean particle size of 0.05 to 1.0 μm, the nickel powder comprising a thin oxidized layer of nickel on a surface thereof and having an oxygen content of 0.3 to 3.0 wt. % and a carbon content of 100 ppm or less per specific surface area of 1 m2 / g of the powder, in a weight proportion of carbon to the nickel powder of unit weight. When the powder is used for a conductive paste for forming inner electrode layers of a multilayer electronic component, it enables the decrease in the residual carbon amount after a binder removal process, thereby making it possible to obtain a multilayer ceramic electronic component with excellent electric characteristics and high reliability in which electrode layers excelling in continuity are formed without decreasing the strength and electric characteristics of the electronic component or creating structural defects.
Owner:SHOEI CHEM IND CO LTD

Three dimensional printing apparatus and three dimensional printing method

The disclosure provides a 3D printing apparatus and a 3D printing method which form a 3D object by forming and stacking a plurality of forming layers. The 3D printing apparatus includes a body, a printing module, a curing module, a sensing module and a controlling module. The body has a stage. The printing module sprays liquid forming material on the stage. The curing module cures the liquid forming material on the stage to form a forming layer. The sensing module is configured corresponding to the stage and detects a surface profile of the forming layer according to a condition parameter to generate a profile signal. The controlling module is electrically connected to the printing module, sensing module and curing module. The controlling module receives the profile signal and drives the printing module and the curing module according to the profile signal to remedy the surface profile of the forming layer.
Owner:XYZPRINTING +2

Conductive polymers having highly enhanced solubility in organic solvent and electrical conductivity and synthesizing process thereof

InactiveUS20050269555A1Highly linear configurationFew side chainConductive materialOrganic conductorsSolubilityFiber
The present invention relates to a new process of synthesizing conductive polymers from monomers substituted with amine group. The process provides simple synthesizing steps for the conductive polymers without using other additives such as stabilizers or emulsifiers. The conductive polymers synthesized according to the present invention have highly enhanced solubility in common organic solvents and electrical conductivity compared to conventional conductive polymers. Therefore, the conductive polymers synthesized according to the present process can be utilized in applications that require high electrical conductivity, for example an electromagnetic interference shield or a transparent electrode of thin film, as well as in specific applications such as various conductive films, fibers, polymer blends, battery electrodes or conductive etch mask layers.
Owner:YOON HO SUNG +1

Touch Panel and Peripheral Circuit Thereof

A touch panel and a peripheral circuit thereof are provided. Each bonding pad of the peripheral circuit includes a first conductive layer, a first protective layer, a second conductive layer, and a second protective layer sequentially arranged on a substrate from bottom to top. A covered area of the second conductive layer provided by the second protective layer is increased to cover a portion of the second conductive layer located above a junction area between the first protective layer and a terminal part of the first conductive layer, thereby increasing the reliability of the bonding pads.
Owner:AU OPTRONICS CORP

Method for manufacturing tantalum oxy nitride capacitors

A method for manufacturing a capacitor using a tantalum oxy nitride (TaON) film in a process for a semiconductor device. More particularly, a method for manufacturing a capacitor which reduces a number of steps and thus increases yield by in-situ performing P-doping after forming a MPS (Metastable Poly Silicon) on a lower electrode and forming a nitride film before forming a tantalum oxy nitride film to prevent the concentration of phosphor contained in the lower electrode from being reduced by removing the phosphor on the surface of the lower electrode in a cleaning process between the above two steps, for thereby increasing the capacitance of the capacitor.
Owner:SK HYNIX INC

Multilayer ceramic capacitor

A multilayer ceramic capacitor includes a ceramic multilayer body including dielectric ceramic layers and inner electrodes laminated with the dielectric ceramic layers interposed therebetween, wherein the dielectric ceramic layers include a perovskite compound containing Ba and Ti, and the inner electrodes (a) contain Ni as a main component, (b) include segregation with the perovskite compound containing Ba and Ti, which is scattered in the inner electrodes and embedded in the inner electrodes, in amount equal to or higher than about 2%, and (c) include columnar segregation with the perovskite compound containing Ba and Ti, which penetrates through the inner electrodes from one main surface side to the other main surface side, in an amount equal to or lower than about 5%, or do not include the columnar segregation. Further, an average thickness of the inner electrodes is equal to or smaller than about 0.4 μm.
Owner:MURATA MFG CO LTD

Semiconductor device

A semiconductor device includes at least two fin-shaped structures, a gate structure, at least two epitaxial structures and a silicon cap. The fin-shaped structures are disposed on a substrate and are covered by the gate structure. The epitaxial structures are disposed at one side of the gate structure and respectively directly contact each fin-shaped structure, wherein the epitaxial structures are spaced apart from each other. The silicon cap simultaneously surrounds the epitaxial structures.
Owner:MARLIN SEMICON LTD

Strengthened ceramic restoration

InactiveUS20090004630A1Easy to spreadInhibit and reduce LTDTooth crownsArtificial teethTooth colourThermal compression
The present invention relates to a process for the preparation of a full-ceramic dental restoration, comprising heat pressing of a tooth coloured pressing glass on a fully or partially supporting structure of yttria doped tetragonal zirconia (YTZP), comprised of yttria doped tetragonal zirconia ceramic having a grain size, as measured by the linear intercept method, of less than 0.6 μm, wherein the pressing glass has a thermal expansion coefficient (TEC) of between 9.0 and 11.0 μm / m.K (measured in the range of from 25 to 500° C.) and wherein the pressing glass has a pressing temperature of between 750 and 1200° C. In a further aspect, the invention relates to a full-ceramic dental restoration, comprising a fully or partially supporting structure of yttria doped tetragonal zirconia (YTZP) and a heat pressed tooth coloured pressing glass, which restoration is modeled to be in occlusal contact with opposing teeth and in mesio-distal contact with neighbouring teeth.
Owner:VAN DER ZEL JOSEPH MARIA +5

Soi substrate and method for manufacturing soi substrate

On the side of a surface (the bonding surface side) of a single crystal Si substrate, a uniform ion implantation layer is formed at a prescribed depth (L) in the vicinity of the surface. The surface of the single crystal Si substrate and a surface of a transparent insulating substrate as bonding surfaces are brought into close contact with each other, and bonding is performed by heating the substrates in this state at a temperature of 350° C. or below. After this bonding process, an Si—Si bond in the ion implantation layer is broken by applying impact from the outside, and a single crystal silicon thin film is mechanically peeled along a crystal surface at a position equivalent to the prescribed depth (L) in the vicinity of the surface of the single crystal Si substrate.
Owner:SHIN ETSU CHEM IND CO LTD

Method for producing a metallic alloy by the oxidation and chemical reduction of gaseous non-oxide precursor compounds

A metallic alloy is prepared from a gaseous mixture of at least two non-oxide precursor compounds, wherein the non-oxide precursor compounds collectively comprise the metallic constituents. The mixture of the non-oxide precursor compounds is oxidized to form a solid mixed metallic oxide. The solid mixed metallic oxide is chemically reduced to produce the metallic alloy.
Owner:GENERAL ELECTRIC CO

Loading device for non-destructive inspections of composite structures

There is provided a loading device for applying a load to a composite structure during a non-destructive inspection. The loading device comprises a load indicator to indicate the load applied, which is preferably a normal load, and comprises a connector attached to the load indicator to connect the loading device to a surface of the structure. A support contacts the structure to support the load indicator and the connector. The support preferably comprises a plate and three legs, wherein the load indicator is attached to the plate and the legs contact the structure. The legs may comprise protective ends for contacting the structure and may define adjustable lengths. A load applicator in mechanical communication with the connector and the load indicator applies the load to the structure, advantageously by reducing the distance between the connector and load indicator to create the load. The connector may connect to the surface of the structure defining a protrusion or to a protrusion removably adhered to the surface of the structure.
Owner:THE BOEING CO

Micromachined High Breakdown Voltage ESD Protection Device for Light Emitting Diode and Method of Making the Same

This invention relates to a micromachined ESD protection device and its microfabrication method for light emitting diode (LEDs) chips. The LEDs is coupled to the ESD protection device in a shunt connection to absorb and eliminate the electrostatic charges induced by human contact or other voltage spike sources. The ESD protection circuit can prevent the LED from burning down and extend its lifespan. By using a thick polyimide layer as the dielectric film for capacitors in the micromachined ESD protection device at the current invention has the advantages with high breakdown voltage compared to other ESD protection circuits. And furthermore, the device in the current invention is easy for mass production with low manufacturing cost. Another embodiment of the present invention is that the multiple-array arrangement in current micromachined ESD protection device could greatly enhance the liability due to multiple-protection and thus to provide the possibility of multiple-times usage.
Owner:WISENSTECH

Multilayer ceramic electronic device and method of production of same

An object of the present invention is to provide a method of production of a multilayer ceramic electronic device able to prevent the multilayer ceramic electronic device from dropping in mechanical strength and causing structural defects such as cracks at a low cost even if annealing the sintered body for reoxidation, and also such a multilayer ceramic electronic device, i.e., a method of production of a multilayer ceramic electronic device including a step of stacking green sheets and internal electrode layers to obtain a green chip, a step of firing the green chip under a reducing atmosphere to obtain a sintered body, and a reoxidation step of annealing the sintered body in a predetermined annealing atmosphere gas, wherein the annealing atmosphere gas in the reoxidation step has a dew point of −50 to 0° C., and the annealing atmosphere gas in the reoxidation step has a temperature of 900 to 1100° C.
Owner:TDK CORPARATION

Method for manufacturing an ink jet recording head, an ink jet recording head manufactured by such method of manufacture, and an ink jet recording apparatus having such ink jet recording head mounted thereon

A method for manufacturing an ink jet recording head, which is provided with a recording elemental substrate having discharge port group for discharging ink, an electric wiring substrate electrically connected with the recording elemental substrate, and a supporting member for holding and fixing the recording elemental substrate and the electrical wiring substrate, comprises the steps of injecting thermohardening filler into a filler retaining portion communicated with the sealing area requiring sealing; filling the area with the thermohardening filler injected into the filler retaining portion by heating the filler to flow; and hardening the filled thermohardening filler. With the structure thus arranged, it is possible to eliminate any electrical and structural defects in order to materialize a highly reliable and compact ink jet recording head.
Owner:CANON KK

Automatic stir-fryer

Disclosed is an automatic stir-fryer comprising: a machine stand; a base pivotably provided on the machine stand; a rotary shaft providing rotary power and connected to a stir-frying rotary tank containing foodstuffs; a high-frequency induction heating unit coaxially covering the stir-frying rotary tank; a tilting unit pivotably disposed on the base; a receiving tank provided on the machine stand for receiving the cooked foodstuffs and controlled by an automatic push rod to move forward and backward; a cleaning unit assembled on the machine stand and corresponding to the stir-frying rotary tank after tilting by the tilting unit for water cleaning the stir-frying rotary tank; a control unit vertically disposed on the machine stand and provided with an control panel for controlling the operating time of the automatic stir-fryer and the temperature of the high-frequency induction heating unit.
Owner:CHANG JIAN WEI

Organic semiconductor structure, manufacturing method of the same, and organic semiconductor device

The main object is to provide a manufacturing method of organic semiconductor, an organic semiconductor device structure manufactured by the manufacturing method and an organic semiconductor device, those having uniform and high carrier transport property over a relatively large area. To achieve the object, the present invention provides a manufacturing method of an organic semiconductor structure, wherein the organic semiconductor structure comprises, on a base material, an organic semiconductor layer formed from a liquid crystalline organic semiconductor material, and comprising processes of: forming an oil repellent region and a lipophilic region, which is surrounded by the oil repellent region, on the base material; coating an organic semiconductor layer forming solution, comprising the liquid crystalline organic semiconductor material and a solvent, on the lipophilic region; and crystallizing the liquid crystalline organic semiconductor material by evaporating the solvent in the organic semiconductor layer forming solution coated on the lipophilic region.
Owner:DAI NIPPON PRINTING CO LTD

ECP polymer additives and method for reducing overburden and defects

Electrochemical plating polymer additives and method which reduces metal overburden in an electroplated metal while optimizing gap fill capability are disclosed. The polymer additives are provided in an electrochemical plating bath solution and may include low cationic charge density co-polymers having aromatic and amine functional group monomers. The low cationic charge density polymers may include benzene or pyrollidone functional group monomers and imidazole or imidazole derivative functional group monomers.
Owner:TAIWAN SEMICON MFG CO LTD

Augmented reality system for component assembly and archival baseline clone

Methods, systems and devices for assembling components to form an assembled structure, using virtual or augmented assembly tooling, in real time, real-time virtual assembly tooling (or RVAT). Structures such as vehicles, aircrafts, or other products are produced from assembling a plurality of component parts together, with virtual assembly tooling of the system, method and devices that provides real-time capability for directing and guiding operations and for generating feedback. The structure is built from the CAD, transforming the CAD to imaging representations whose transformations are generated with one or more component scans, projected on a display. The method, system and devices are constructed to build a product from a CAD through transformations of CAD information in conjunction with the real-time imaging and tracking of assembly components and tooling precise positioning of components, and controlling assembly operations, such as, for example, assembly, drilling, riveting, bonding, and welding, a product is constructed.
Owner:TYSON II JOHN

Multilayer capacitor

A multi-terminal multilayer capacitor reducing an equivalent series inductance (ESL), whose design flexibility is high, in which cost of electrode material is low, and in which a structural defect hardly occurs includes lead portions of first and second internal electrodes and lead portions of third and fourth internal electrodes that are disposed along the length of each of two side surfaces so as to be alternately exposed. Preferably, the first and third internal electrodes, and the second and fourth internal electrodes are disposed so as to be arranged along the length of each side surface in a coplanar manner, with a predetermined distance provided between two internal electrodes. When viewed in a laminating direction of dielectric layers, a capacitor-forming portion of the first internal electrode does not overlap with a capacitor-forming portion of the fourth internal electrode, and a capacitor-forming portion of the second internal electrode does not overlap with a capacitor-forming portion of the third internal electrode.
Owner:MURATA MFG CO LTD

Inductor array chip and dc-dc converter

An inductor array chip includes a magnetic laminated body and a plurality of inductors. The magnetic laminated body includes a plurality of stacked magnetic layers. The plurality of inductors are arranged inside the magnetic laminated body. The inductance of a first inductor differs from the inductance of a second inductor. The inductors include a plurality of coil-shaped conductors and via-hole conductors. The plurality of coil-shaped conductors are arranged between the magnetic layers. The via-hole conductors electrically connect the plurality of coil-shaped conductors. The inductors include a plurality of inductors in which the section sizes of the coil-shaped conductors differ from one another.
Owner:MURATA MFG CO LTD

Method for evaluating the sealing of a bipolar structure for an electrochemical generator

A method for evaluating sealing of a bipolar structure including a sheet-like substrate forming a current collector, and two electrodes in a form of films arranged on opposite surfaces of the substrate, respectively, the method including: placing the bipolar structure in a cavity to define first and second compartments therein, which are separated by the bipolar structure, a periphery of which is sealingly connected to the cavity; circulating a fluid in the first compartment of the cavity toward the second compartment; and evaluating sealing of the bipolar structure from a measurement of difference in pressure of the fluid in the first and second compartments.
Owner:COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Method for manufacturing semiconductor substrate

A consistent reduction in temperature in an SOI substrate manufacturing process is achieved.A gate oxide film provided on an SOI substrate is obtained by laminating a low-temperature thermal oxide film 13 grown at a temperature of 450° C. or below and an oxide film 14 obtained based on a CVD method. Since the thermal oxide film 13 is a thin film of 100 Å or below, a low temperature of 450° C. or below can suffice. The underlying thermal oxide film 13 can suppress a structural defect, e.g., an interface state, and the CVD oxide film 14 formed on the thermal oxide film can be used to adjust a thickness of the gate oxide film. According to such a technique, a conventional general silicon oxide film forming apparatus can be used to form the gate oxide film at a low temperature, thereby achieving a consistent reduction in temperature in the SOI substrate manufacturing process.
Owner:SHIN ETSU CHEM IND CO LTD
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