311 results about "Stress free" patented technology

The stent matrix of a stent incorporates joints that permit stress-free relative movement of first and second structural portions (10, 12) of the matrix as the facing surfaces of the joint between the structural portions slide relative to one another. The joints are formed in the thickness of an annular wall of the stent, and are created by a computer-controlled laser beam cutting procedure.

A micro electromechanical system (MEMS) switch (10) includes a substrate (12) and a stress free beam (14) disposed above the substrate (12). The stress free beam (14) is provided within first and second platforms (16, 18) to limit displacement of the stress free beam (14) in directions that are not substantially parallel to the substrate (12). A set of one or more control pads (20) is disposed in a vicinity of a first lengthwise side (22) of the stress free beam (14) for creating a potential on the first lengthwise side (22) of the stress free beam (14). The stress free beam (14) is displaceable in directions substantially parallel to the substrate (12) in accordance with the potential for providing a signal path.

A method of compensating for thermal contraction of superconducting and cryo-resistive cables. The method includes the steps of determining a compensation length for a cable such that when the cable is subjected to an operating temperature, the cable is in or near a stress-free state, and installing the cable into a pipe such that portions of the cable extend outwardly past ends of the pipe. The method further includes the steps of marking each end of the cable such that the determined compensation length is visibly shown, forcing the cable into the pipe at an ambient installation temperature such that a cable pattern is formed therein, and maintaining the cable in the pipe to prevent the cable from being pushed out of the pipe.

A torsional vibration damper mountable to a rotatable shaft. The torsional vibration damper is a composite structure including a body formed of a polymer, such as a glass-reinforced polyamide, that surrounds an insert formed of a structurally-rigid material, such as a metal. The insert includes one or more support flanges that extend radially outward into the polymer body. When the torsional vibration damper is removed from the rotatable shaft, axial forces applied to the damper are transferred by the support flanges to the insert such that the polymer body remains substantially stress-free. In addition to, or instead of, the support flanges, the insert may include torque-locking structure that locks the polymer annular body with the insert to prevent relative rotation therebetween.

A liquid crystal display package including a liquid crystal cell having a die with a pixel array, and a transparent plate attached to the die. A liquid crystal material is disposed in a gap region between the die and the transparent plate. The display assembly further includes a containment structure adapted to couple to and at least partially receive liquid crystal cell therein, and an electrical connector portion integrated with the containment structure. A plurality of conductive contacts are positioned in the containment structure for secured support thereof, and in substantially stress-free electrical connection with the pixel array. The conductive contacts further are configured to releasably couple to mating conductive contacts of an opposed electrical connector.

Various methods are described where the semiconductor die and the lead frame (or the BGA or LGA substrate) are spaced apart to reduce stress. In one scenario, an air gap is formed between the semiconductor die and the lead frame by depositing a perimeter (made, for example, using polymer) either on the semiconductor die or the lead frame. In another scenario, an anisotropic conducting film (ACF) is formed with an air gap between the semiconductor die and the lead frame (or the BGA or LGA substrate). The air gap relieves stress on the semiconductor die. Further, a lead frame-based isolator package and a BGA (or LGA) isolator package are described. A window-frame ACF-based isolation method for magnetic coupling in a lead-frame package and BGA (or LGA) package is also described.

The invention discloses a digitalized assembly system for bodies of large planes. The digitalized assembly system comprises an attitude-adjusting positioning system base platform, an attitude-adjusting positioner unit, a shape-preserving frame, process connectors, end surface shape-preserving frame positioners, a process floor, a modularized external console and a robot machining plant. The digitalized assembly system integrates the numerically controlled positioners, the shape-preserving frame and the process connectors together to carry out flexible supporting, attitude adjustment and accurate positioning for each panel module and realize stress-free or low-stress assembly; the numerically controlled positioners can move in coordination to elastically restore deformed panel modules; the industrial robot holing technique and the industrial robot boring technique are adopted to increase the connection quality of opposite joint areas in body assembly, bore main intersection holes and increase the positional and surface precision of holes; the industrial robot-assisted assembly technique is adopted to accurately position and mount system parts; and by arranging the mounting positions of a plurality of numerically controlled positioners, the digitalized assembly system can be adapted to the change in the length of a body, and has certain scalability.

The invention relates, on the one hand, to a prismatic, especially panel-formed thermal insulation element which is enveloped in a gas-tight foil and evacuated, whereby a stable core pre-formed from a porous material is completely enveloped in a single cut sheet of the gas-tight foil; as well as a manufacturing process for same comprising the following steps:

• • a) Manufacture of a prismatic core corresponding to the desired form of the thermal insulation element from a porous material;
  • b) Enveloping of the principal faces of this core with a single sheet of the gas-tight foil;
  • c) At least partial welding together of the foil which is drawn tight around the core along the face of the core;
  • d) Folding-in of the welded seam area of the foil against the face of the core;
  • e) Stress-free folding-together of the areas of the cut sheet of gas-tight foil projecting beyond the core, covering and in flat contact with the end surface(s) of the core;
  • f) Welding together of the folded-together areas of foil on at least one end face of the core;
  • g) Evacuation of the enveloped core;
  • h) Complete welding closed of all remaining openings in the foil under vacuum.

A method of forming a metal feature in a low-k dielectric layer is provided. The method includes forming an opening in a low-k dielectric layer, forming a metal layer having a substantially planar surface over the low-k dielectric layer using spin-on method, and stress free polishing the metal layer. Preferably, the metal layer comprises copper or copper alloys. The metal layer preferably includes a first sub layer having a substantially non-planar surface and a second sub layer having a substantially planar surface on the first sub layer.

The invention relates to a display device, and more particularly a flexible display device comprising display component layers and display substrate such that the display remains substantially flat throughout the operating temperatures. The invention further relates a display device, and more particularly a flexible display device comprising display component layers and display substrate such that the stress in at least one layer of the light-emitting module in the display is substantially zero throughout the operating temperature range. These and other objects of the invention are accomplished by providing a flexible display, comprising at least one planar flexible substrate, at least one flexible light-emitting module deposited on the flexible substrate, the light-emitting module including at least one light-emitting layer, an anode, a cathode, and at least one top flexible superstrate on the opposite side of said display from said planar flexible substrate wherein the display is thermoelastically balanced in such a way that the display is always substantially flat, and the stress in at least one layer of the light-emitting module is substantially zero throughout the operating temperature range.

A method and device for determining at least a first parameter of a track. The method includes providing a first track geometry quality data associated to at least one point along a rail at a first temperature, providing a second track geometry quality data associated to at least one point at a second temperature, and describing a difference between the first and second track geometry quality data using a model. The model relates the first and second track geometry quality data with associated temperatures to stress free temperature and/or track resistance, and estimates the stress free temperature and/or track resistance in at least one point based on the model.

A high energy storage flywheel having a rotor and annular disk which are of a composite material. A metal hub is secured to a shaft and joined to the disk at a hoop. The hub has opposite sections which are of a generally double conical shaft. A concentric rim extends around each hub section and upon rotation the hub sections expansivity deform about the rim to apply a compressive force to the disk to maintain a substantially stress free condition at the rotor and disk interface.

The present invention relates to a method of measuring residual stress and, more particularly, to a residual stress measuring method using a continuous indentation tester. Due to pile-up and sink-in of a material or a blunted tip, a conventional residual stress measuring method cannot compensate for error of a real contact (indentation) depth or directly remove stress through a thermal or mechanical technique in the conventional method of measuring residual stress of a weldment, so that it is very difficult to estimate a stress-free reference curve or to quantitatively measure residual stress. However, the present invention can precisely estimate a stress-free curve of a weldment using an indentation strength ratio (OIT ratio) of a stress-free base metal to the weldment, and compensates for error, occurring in the measurement of a material having a weldment or an anisotropic stress structure, based on the indentation strength ratio, thereby more precisely measuring residual stress. Thus, unlike the conventional method, the present method can minimize error occurring in the residual stress measuring process, and agrees with actual models.

The invention discloses a method for utilizing a laser ultrasonic wave to precisely measure a third order elastic constant of metal. The method comprises the following steps: respectively measuring wave velocities of a longitudinal wave, a transverse wave and a surface wave excited by a laser under stress-free state and stress state; utilizing the wave velocities of the longitudinal wave, the transverse wave and the surface wave measured under stress-free state to calculate a second order elastic constant and a density of metal according to a sonic elasticity theory and a Rayleigh equation; utilizing the ultrasonic wave velocities of the longitudinal wave, the transverse wave and the surface wave measured under stress state to introduce an equivalent second order elastic constant and an independently measured linear coefficient of thermal expansion; and lastly, calculating the third order elastic constant according to the sonic elasticity theory. According to the method, a pulse laser source is utilized to excite a sound surface wave, non-contact exciting is performed under a thermal elastic system and an overheated phenomenon of materials is avoided, so as to realize nondestructive measurement. A large amount of sound surface wave data spread for different distances is collected and a correlation function is utilized to calculate a wave velocity of the sound surface wave and a spread distance of sound wave, thereby greatly reducing error of arriving time value of the sound surface wave and promoting the measuring precision of a sound wave velocity.

A self-aligned SiGe FinFET device features a relaxed channel region having a high germanium concentration. Instead of first introducing germanium into the channel and then attempting to relax the resulting strained film, a relaxed channel is formed initially to accept the germanium. In this way, a presence of germanium can be established without straining or damaging the lattice. Gate structures are patterned relative to intrinsic silicon fins, to ensure that the gates are properly aligned, prior to introducing germanium into the fin lattice structure. After aligning the gate structures, the silicon fins are segmented to elastically relax the silicon lattice. Then, germanium is introduced into the relaxed silicon lattice, to produce a SiGe channel that is substantially stress-free and also defect-free. Using the method described, concentration of germanium achieved in a structurally stable film can be increased to a level greater than 85%.

The invention belongs to the technical field of the preparation of transmission electron microscope samples of soft brittle phototransistors, and relates to a method for preparing a transmission electron microscope sample of a soft brittle phototransistor, in particular to a method for preparing a transmission electron microscope sample of a soft brittle photo semiconducting transistor. The method is characterized in that a hard brittle semiconductor with micro Vickers hardness of over 8 GPa is used as a protective layer of the soft brittle phototransistor, wherein the roughness Ra of the ultra-smooth surface of the protective layer is below 1 nanometer, and the thickness is below 650 micrometers; sand paper of 120 to 800 meshes is adopted in the coarse grinding stage, and a membrane is ground by adopting diamond of between 0.1 and 30 micrometers in the accurate grinding stage; the protective layer is bonded with the sample by adopting a hot setting adhesive which is insoluble in an organic solvent, and a first surface of the ground transmission electron microscope sample is bonded with a substrate by adopting a hot setting adhesive which is soluble in the organic solvent; and in the final stage of accurate grinding, the transmission sample and a thin area of the protective layer are obtained by a stress-free grinding method. The method has the advantages that the preparation of the transmission electron microscope sample of the soft brittle phototransistor is realized, and high-resolution transmission electron microscope atomic images are obtained.

A process for producing grain-oriented electrical steel strip by means of thin slab continuous casting, comprising the following process steps: a) smelting a steel, b) continuously casting the smelt by thin slab continuous casting, c) heating up the thin slabs and subjecting the slabs to homogenization annealing at a maximum temperature of 1250° C., d) heating to a temperature between 1250° C. and 1350° C., e) continuously hot rolling the thin slabs to form a hot-rolled strip, f) cooling and reeling the hot-rolled strip to form a coil, g) annealing the hot-rolled strip after reeling and prior to a subsequent cold rolling step, h) cold rolling the hot-rolled strip to the nominal usable thickness, i) subjecting the cold-rolled strip to recrystallization, decarburization and nitridation annealing, j) applying an annealing separator (non-stick layer) to the strip surface of the cold-rolled strip, k) subjecting the cold-rolled strip to secondary recrystallization annealing, forming a finished steel strip having a pronounced Goss texture, and l) stress-free annealing the finished steel strip, which has been coated with an insulating layer, provides an improved process for producing grain-oriented electrical steel strip by means of thin slab continuous casting. This is achieved in that the recrystallization, decarburization and nitridation annealing of the cold-rolled strip in process step h) comprises a decarburization annealing phase and a subsequent nitridation annealing phase, with an intermediate reduction annealing phase being interposed between the decarburization annealing phase and the nitridation annealing phase, and carried out at a temperature ranging from 820° C.-890° C., for a maximum period of 40 seconds, with a dry, gaseous annealing atmosphere, which contains nitrogen (N₂) and hydrogen (H₂) and acts on the cold-rolled strip, and which has a water vapor/hydrogen partial pressure ratio pH₂O/pH₂ of less than 0.10.

Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.