Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Active-type infrared camouflage structure based on vanadium dioxide

A vanadium dioxide and infrared camouflage technology, which is applied in the direction of thermoelectric device node lead wire materials, thermoelectric device components, etc., can solve the problems of increasing target exposure, achieve high camouflage effect, have engineering value, and reduce costs.

Active Publication Date: 2016-03-23
CHINA ACADEMY OF SPACE TECHNOLOGY
View PDF4 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method of direct cooling to achieve infrared camouflage is not an ideal approach, because cooling will cause additional heat generation, which will be released from other places on the target, which may increase the target's chance of exposure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Active-type infrared camouflage structure based on vanadium dioxide
  • Active-type infrared camouflage structure based on vanadium dioxide
  • Active-type infrared camouflage structure based on vanadium dioxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The structural composition of the present invention is explained and illustrated below in conjunction with the accompanying drawings.

[0030] Such as figure 1 As shown, a vanadium dioxide-based active infrared camouflage structure of the present invention includes a heating substrate 1, a vanadium dioxide film 2 and an electrode pair 3;

[0031] The vanadium dioxide film 2 is coated or evaporated on the upper surface of the heating substrate, and the thickness of the vanadium dioxide film (2) is 10nm-1mm; the heating substrate 1 provides support for the vanadium dioxide film and changes the vanadium dioxide by electric current heating The temperature of the film 2; the electrode pair 3 is located at both ends of the heating substrate 1, connected to the external power supply and the heating substrate 1, and is used to change the temperature of the heating substrate, thereby adjusting the change of the vanadium dioxide emissivity.

[0032] Heating substrate 1 can choos...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an active-type infrared camouflage structure based on vanadium dioxide, and the structure comprises a heating substrate, a vanadium dioxide film, and an electrode pair. The vanadium dioxide film is disposed on the upper surface of the heating substrate in a manner of coating or vapor plating The heating substrate changes the temperature of the vanadium dioxide film through current heating while providing support for the vanadium dioxide film. The electrode pair is located at two ends of the heating substrate, and is connected with an external power supply and the heating substrate. The electrode pair is used for changing the temperature of the heating substrate, so as to adjust the change of the emissivity of vanadium dioxide. The structure can achieve low-power-consumption and quick adjustment infrared camouflage.

Description

technical field [0001] The invention relates to an active infrared camouflage structure based on vanadium dioxide, which is especially suitable for the requirements of infrared camouflage or stealth on plane, curved and flexible surfaces. Background technique [0002] In nature, color-changing camouflage is a bizarre ability that many animals have evolved as an adaptation for survival. For example, chameleons and octopuses can actively change the color of their skin according to their surroundings to achieve camouflage or invisibility. Similar to the camouflage of animals in the visible light band, camouflage in the infrared band is also an extremely important technology, and has broad application prospects in both military and commercial aspects. [0003] Infrared thermal imager is the most important device to realize infrared detection and reconnaissance. It displays the measured target by measuring the thermal radiation energy of the object. According to the law of ther...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/22H01L35/02H10N10/855H10N10/80
CPCH10N10/80H10N10/855F41H3/00
Inventor 肖林刘军库
Owner CHINA ACADEMY OF SPACE TECHNOLOGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com