Low temperature deposition method of hypovanadic oxide thin film on glass

A technology of vanadium dioxide and deposition method, which is applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the research that started as early as the early 1970s, obstacles to the industrialization of smart glass, Increase the difficulty of industrialization and other issues to achieve the effects of reducing difficulty, saving energy consumption, and low crystallization temperature

Inactive Publication Date: 2008-10-08
GUANGZHOU INST OF ENERGY CONVERSION - CHINESE ACAD OF SCI
View PDF0 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The research on applying vanadium dioxide to energy-saving windows started as early as the early 1970s, but there are still many technical problems to be solved
At the same time, in the preparation process, VO 2 High deposition temperature (generally higher than 500°C) will be a serious obstacle to the industrialization of this kind of smart glass
On the one hand, high temperature will lead to high power consumption and increase the cost of preparation. On the other hand, it also puts forward more requirements on the preparation system, which increases the difficulty of industrialization

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Multilayer thin films were prepared by magnetron sputtering. The magnetron sputtering system consists of a transition chamber and a main sputtering chamber (45 cm in diameter). The main sputtering chamber is connected with a molecular diffusion pump, and the ultimate vacuum is 2.0×10 -6 Pa. The sputtering chamber has three target positions for three different 2-inch diameter targets. Each target position is inclined upward at an angle of 30°, and can be co-sputtered upwards in a confocal manner or sputtered upwards in a three-target independent manner. The sample stage can be heated up to over 600°C and can keep rotating continuously during the sputtering process.

[0022] In the experiment, the substrate was float glass. The substrate was ultrasonically cleaned in anhydrous alcohol and acetone for 5 minutes, then dried with nitrogen, fixed on the sample stage and placed in a transitional vacuum chamber for vacuuming. After 10 minutes, transfer to the sputtering va...

Embodiment 2

[0028] The vacuum deposition system and substrate cleaning and installation process are the same as those in Embodiment 1. Before thin film sputtering, the float glass substrate was heated to 350 °C and kept constant.

[0029] Preparation of Diffusion Barrier Silica. Silicon is used as the cathode sputtering material, radio frequency sputtering, and the sputtering power is set to 100W. When the sputtering chamber is fed with Ar gas, it is also fed with O 2 Gas (purity higher than 99.9%), the flow velocity of Ar gas is 30sccm, O 2 The gas flow rate was 7.5 sccm. Sputtering for 20 min, deposited SiO 2 The thickness of the film layer is about 60nm.

[0030] Preparation of metal oxide buffer layers. The preparation conditions are as follows: use a tin oxide ceramic target material, the working atmosphere is high-purity Ar gas (purity: 99.9995%), inject it into the sputtering chamber at a flow rate of 30 sccm and keep the working pressure of the sputtering chamber at 0.6Pa; ...

Embodiment 3

[0034] The vacuum deposition system and substrate cleaning and installation process are the same as those in Embodiment 1.

[0035] Before thin film sputtering, the float glass substrate was heated to 280 °C and kept constant.

[0036] The preparation of silicon dioxide as a diffusion barrier layer is the same as in Example 1. Sputtering for 85 minutes, deposited SiO 2 The thickness of the film layer is about 50nm.

[0037] Preparation of metal oxide buffer layers. The preparation conditions are as follows: use an indium oxide ceramic target material, the working atmosphere is high-purity Ar gas (purity: 99.9995%), inject it into the sputtering chamber at a flow rate of 30 sccm and keep the working pressure of the sputtering chamber at 0.6Pa; Set to 50W and sputter for 10 minutes. At this time, the In deposited on the glass substrate 2 o 3 The film thickness is about 30nm.

[0038] Preparation of vanadium dioxide by thermochromatography. Adopt vanadium dioxide to make ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a low temperature deposition method of vanadium dioxide thin film on a glass substrate by utilizing a principle of template induction function for the crystal growth. Glass is taken as a substrate, and the low temperature deposition method comprises the steps in sequence that firstly, the glass substrate is cleaned and pre-heated; secondly, a silicon dioxide diffusing blocked layer is prepared; thirdly, a metal oxide buffer layer is prepared; fourthly, a vanadium dioxide thermal color layer is prepared. The material of the metal oxide buffer layer adopted by the invention is transparent in the visible light area and has low crystallization temperature, the crystal shape of the material can be well matched with the vanadium dioxide, and the template induction function can be generated during the growing process of the vanadium dioxide thin film, therefore, the deposition temperature of the vanadium dioxide thin film can be greatly reduced. The preparing process of the vanadium dioxide intelligent glass is simplified, the cost is reduced, the energy consumption is saved, and the difficulty of the industrialization process of the vanadium dioxide intelligent glass is greatly reduced.

Description

technical field [0001] The invention belongs to the technical field of building energy saving among high-efficiency energy-saving and consumption-reducing technologies, and in particular relates to a low-temperature deposition method of a vanadium dioxide film on a glass substrate. technical background [0002] According to statistics, my country's building energy consumption has reached 30% of the total social energy consumption. With the expansion of my country's urbanization scale, the advancement of urban construction, and the improvement of people's living standards, building energy consumption will increase year by year. In 1996, my country's construction consumed 330 million tons of standard coal annually, accounting for 24% of the total energy consumption. By 2001, it had reached 376 million tons, accounting for 27.6% of the total consumption, with an annual growth rate of 5 / 1000. According to forecasts, my country's building energy consumption will climb to more tha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/02C23C14/35C23C14/54
Inventor 徐刚黄春明陈丽华黄华凛侯乃升
Owner GUANGZHOU INST OF ENERGY CONVERSION - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap