Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Gallium-nitride-based film on graphene-modified patterned metal substrate and preparation method

A graphene modification, metal substrate technology, applied in metal material coating process, gaseous chemical plating, plating of superimposed layers, etc., can solve problems such as low dislocation density

Inactive Publication Date: 2017-08-22
DALIAN UNIV OF TECH
View PDF10 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ordinary metal substrates generally have a non-single crystal structure. How to prepare Al with low dislocation density and high crystal quality on ordinary metal substrates x Ga y In 1-x-y N thin film is a big problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gallium-nitride-based film on graphene-modified patterned metal substrate and preparation method
  • Gallium-nitride-based film on graphene-modified patterned metal substrate and preparation method
  • Gallium-nitride-based film on graphene-modified patterned metal substrate and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] The specific implementation manners of the present invention will be further described below in conjunction with the accompanying drawings and technical solutions.

[0045] One of the embodiments, as attached figure 1 , as shown in 2, 3.

[0046] The substrate is a patterned Ti substrate 1. The periodic pattern on the patterned Ti substrate 1 is prepared by photolithography and plasma dry etching on one side of the 1mm thick Ti plate. The periodic pattern is formed by Constructed of raised cylinders arranged in a hexagonal lattice, the diameter of each cylinder is 2 μm, the height of the cylinder is 0.5 μm, and the axial distance between the nearest adjacent cylinders is 4 μm.

[0047] A method using magnetron sputtering equipment and ECR-PEMOCVD equipment (invention patent: ZL201210247144.8), prepared at low temperature on the above-mentioned patterned Ti substrate 1 as attached figure 1 Al shown 0.40 Ga 0.50 In 0.10 The continuous process steps of N thin film are...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of manufacturing of gallium-nitride-based films and gallium-nitride-based devices and provides a gallium-nitride-based film on a graphene-modified patterned metal substrate and a preparation method of the gallium-nitride-based film on the graphene-modified patterned metal substrate. Patterned metal is used as the substrate; a catalytic metal layer is prepared on the metal substrate through a magnetron sputtering method firstly; and then, an electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition method is adopted to sequentially conduct nitrogen plasma cleaning on the catalytic metal layer, prepare a graphene layer, prepare an AlxGayIn1-x-yN buffering layer and prepare AlxGayIn1-x-yN epitaxial layer. The gallium-nitride-based film which is low in dislocation density and high in crystalline quality can be prepared on a low-cost non-monocrystal metal substrate. The prepared gallium-nitride-based film can be directly used as a template substrate and the like of the gallium-nitride-based devices and has a broad application prospect.

Description

technical field [0001] The invention belongs to the field of gallium nitride-based thin film and device manufacturing, and particularly relates to a gallium nitride-based thin film on a graphene-modified patterned metal substrate and a preparation method thereof. Specifically, the patterned metal is used as the substrate, and magnetron sputtering is used first. The catalytic metal layer was prepared on the patterned metal substrate by the irradiation method, and then the electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) method was used to clean the catalytic layer with hydrogen plasma in sequence. A metal layer, a graphene layer, a gallium nitride-based buffer layer and a gallium nitride-based epitaxial layer are prepared. Background technique [0002] GaN-based material Al x Ga y In 1-x-y N (including gallium nitride GaN, aluminum nitride AlN, indium nitride InN and its solid solution) belongs to the third-generation semic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/16C23C16/26C23C16/34C23C28/00H01L21/02
CPCC23C14/35C23C14/165C23C16/26C23C16/303C23C28/322C23C28/34H01L21/02425H01L21/0243H01L21/02458H01L21/0254H01L21/0262
Inventor 秦福文马春雨白亦真王德君林国强
Owner DALIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com