Gallium-nitride-based film on graphene-modified patterned metal substrate and preparation method

A graphene modification, metal substrate technology, applied in metal material coating process, gaseous chemical plating, plating of superimposed layers, etc., can solve problems such as low dislocation density

Inactive Publication Date: 2017-08-22
DALIAN UNIV OF TECH
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Problems solved by technology

However, ordinary metal substrates generally have a non-single crystal structure. How to prepare Al with low disloc

Method used

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  • Gallium-nitride-based film on graphene-modified patterned metal substrate and preparation method
  • Gallium-nitride-based film on graphene-modified patterned metal substrate and preparation method
  • Gallium-nitride-based film on graphene-modified patterned metal substrate and preparation method

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Embodiment Construction

[0044] The specific implementation manners of the present invention will be further described below in conjunction with the accompanying drawings and technical solutions.

[0045] One of the embodiments, as attached figure 1 , as shown in 2, 3.

[0046] The substrate is a patterned Ti substrate 1. The periodic pattern on the patterned Ti substrate 1 is prepared by photolithography and plasma dry etching on one side of the 1mm thick Ti plate. The periodic pattern is formed by Constructed of raised cylinders arranged in a hexagonal lattice, the diameter of each cylinder is 2 μm, the height of the cylinder is 0.5 μm, and the axial distance between the nearest adjacent cylinders is 4 μm.

[0047] A method using magnetron sputtering equipment and ECR-PEMOCVD equipment (invention patent: ZL201210247144.8), prepared at low temperature on the above-mentioned patterned Ti substrate 1 as attached figure 1 Al shown 0.40 Ga 0.50 In 0.10 The continuous process steps of N thin film are...

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Abstract

The invention belongs to the technical field of manufacturing of gallium-nitride-based films and gallium-nitride-based devices and provides a gallium-nitride-based film on a graphene-modified patterned metal substrate and a preparation method of the gallium-nitride-based film on the graphene-modified patterned metal substrate. Patterned metal is used as the substrate; a catalytic metal layer is prepared on the metal substrate through a magnetron sputtering method firstly; and then, an electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition method is adopted to sequentially conduct nitrogen plasma cleaning on the catalytic metal layer, prepare a graphene layer, prepare an AlxGayIn1-x-yN buffering layer and prepare AlxGayIn1-x-yN epitaxial layer. The gallium-nitride-based film which is low in dislocation density and high in crystalline quality can be prepared on a low-cost non-monocrystal metal substrate. The prepared gallium-nitride-based film can be directly used as a template substrate and the like of the gallium-nitride-based devices and has a broad application prospect.

Description

technical field [0001] The invention belongs to the field of gallium nitride-based thin film and device manufacturing, and particularly relates to a gallium nitride-based thin film on a graphene-modified patterned metal substrate and a preparation method thereof. Specifically, the patterned metal is used as the substrate, and magnetron sputtering is used first. The catalytic metal layer was prepared on the patterned metal substrate by the irradiation method, and then the electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) method was used to clean the catalytic layer with hydrogen plasma in sequence. A metal layer, a graphene layer, a gallium nitride-based buffer layer and a gallium nitride-based epitaxial layer are prepared. Background technique [0002] GaN-based material Al x Ga y In 1-x-y N (including gallium nitride GaN, aluminum nitride AlN, indium nitride InN and its solid solution) belongs to the third-generation semic...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/16C23C16/26C23C16/34C23C28/00H01L21/02
CPCC23C14/35C23C14/165C23C16/26C23C16/303C23C28/322C23C28/34H01L21/02425H01L21/0243H01L21/02458H01L21/0254H01L21/0262
Inventor 秦福文马春雨白亦真王德君林国强
Owner DALIAN UNIV OF TECH
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