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322 results about "Polyimide substrate" patented technology

Polyimide substrate bonded to other substrate

Polyimide substrates are bonded to germanium wafers having an epitaxially grown III-V layer and a metal layer. The polyimide substrate and the Ge wafer are subsequently thinned by grinding and etching to reach a final thickness of 25 μms Ge on 25 μms adhesive layer on 50 μms polyimide substrate. The choice of adhesive is of paramount importance. There are several requirements for the adhesive layer to act as a permanent carrier of the thin fragile multijunction solar cell. The adhesive must remain flexible after curing and have a low CTE. It is desired to use an adhesive that cures without the addition of heat, preferably at room temperature. Furthermore, the adhesive layer should have a uniform thickness preferably less than 25 μms (1 mil) and be void-free. It is desired to use a clear adhesive which does not contain any particles in order to obtain a smooth uniform void-free bondline. However, clear adhesives have CTE's that are larger than 80 ppm/° C. and which can be as high as 200 ppm/° C. or more above the glass transition temperature. This is especially problematic for hard adhesives. The ideal adhesive is applied at room temperature but must withstand up to 250° C. during post-bond metallization of the front side of the solar cell. Another important parameter, which affects the ability to spread a liquid adhesive over a 4″ area is the viscosity. Some adhesives, like paste, may have favorable properties but are too thick to spread evenly over a 4″ wafer. Ideally the adhesive is applied either by spinning or spraying. These represent a set of conflicting requirements. There is not one adhesive that has all the desired properties. A thin bonded wafer is demonstrated which has an epi-layer and a metal layer.
Owner:FARAH JOHN

Flexible temperature differential power generation micro-unit structure

The invention discloses a flexible temperature differential power generation micro-unit structure. The flexible temperature differential power generation micro-unit structure is characterized in that a plurality of insulating hard films which are equidistantly distributed to form a layer are deposited on the upper surface of a polyimide substrate, a P-type film thermoelectric arm and an N-type film thermoelectric arm which are parallel to each other are respectively arranged on two upper sides of each insulating hard film, the length and the width of each P-type film thermoelectric arm are equal to those of each N-type film thermoelectric arm, one end of each P-type film thermoelectric arm is connected with one end of the corresponding N-type film thermoelectric arm by a conducting wire, the other end of each P-type film thermoelectric arm is connected with the other end of the adjacent front N-type film thermoelectric arm by a conducting wire, the other end of each N-type film thermoelectric arm is connected with the other end of the adjacent rear P-type film thermoelectric arm, and the same procedure is sequentially repeatedly carried out, so that the flexible temperature differential power generation micro-unit structure is formed. The flexible temperature differential power generation micro-unit structure has the advantages that the flexible temperature differential power generation micro-unit structure is flexible and can deform in multiple directions, the insulating hard films can prevent bismuth telluride thermoelectric materials with poor ductility from being broken when a temperature differential power generation unit structurally deforms, and failure is prevented; and the flexible temperature differential power generation micro-unit structure is mainly used for supplying power for implanted medical micro-devices, and has popularization and application value.
Owner:ZHEJIANG UNIV

Rapid Thinning of GaN and SiC Substrates and Dry Epitaxial Lift-off

InactiveUS20150258769A1Minimize post lift-off polishingAvoid wasting substrate materialPolycrystalline material growthAfter-treatment detailsEtchingCopper plating
An epitaxially grown layer III-V solar cell is separated from the growth substrate by propagating a crack close to the epi/wafer interface. The crack is driven by the elastic strain energy built up due to thermal stresses between GaAs and polyimide by cooling below room temperature. A GaAs wafer is bonded to a polyimide substrate on the epi-side and scribed on the opposite side. The crack is initiated from the scratch and guided along the interface using an epitaxially grown sacrificial layer with lower fracture toughness under the solar cell. No expensive ion implantation or lateral chemical etching of a sacrificial layer is needed. The active layer is transferred wafer-scale to inexpensive, flexible, organic substrate. The process allows re-using of the wafer to grow new cells, resulting in savings in raw materials and grinding and etching costs amounting to up to 30% of the cost of the cell. Several cells are integrated on a common blanket polyimide sheet and interconnected by copper plating. The blanket is covered with a transparent spray-on polyimide that replaces the cover glass. The solar cell is stress-balanced to remain flat on orbit.
Wide bandgap materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC) are very promising for light-emitting diodes (LEDs) and power electronics. These materials are extremely hard and difficult to machine and very expensive. The lack of good quality bulk GaN substrates with a smooth surface at a reasonable price is hampering the development of vertical devices.
A rapid thinning technique is presented by lifting-off a 20-70 μm thick layer from the surface within a fraction of a second, which leaves the surface shiny and smooth. The savings in lapping and polishing add up to 60%, when this technique is incorporated in the crystal manufacturing process. This technology also has application for backside thinning where the savings are even larger.
Owner:FARAH JOHN

Alcohol concentration measuring device by using terahertz anisotropic medium resonance effect and method thereof

InactiveCN102830069AAccurately Measure Alcohol ContentMaterial analysis by optical meansFrequency spectrumParticle physics
The invention discloses an alcohol concentration measuring device by using terahertz anisotropic medium resonance effect and a method thereof. The terahertz anisotropic medium in the invention is formed by arranging two layers of metal resonance ring arrays on upper and lower surfaces of a polyimide substrate. An alcohol solution to be measured is disposed on the metal resonance ring array at one side of the anisotropic medium; terahertz waves sent by a backward wave oscillator vertically enter the metal resonance ring array at the other side; when the terahertz waves scan and change within a certain frequency range, a double-layer metal resonance ring array reflection coefficient curve is obtained by detection by two schottky diode detectors. The resonance effect of the metal resonance rings allows the resonance peaks on the reflection coefficient curve to move with the change of the alcohol concentration. The frequency spectrum resolution of the backward wave oscillator is less than 5 MHz, and the resonance peak movement in the reflection coefficient curve is more than 25 GHz when the solution to be measured changes from pure water to pure alcohol, so the precision of the measuring device for measuring alcohol concentration is up to more than 0.02%.
Owner:CHINA JILIANG UNIV

Power supply printed circuit board and processing method thereof

InactiveCN104812157AMeet the requirements of high voltage resistanceReduce thicknessPrinted circuit detailsPrinted circuit aspectsCopper foilPolyimide substrate
The invention is applied to the technical field of a printed circuit board, and provides a processing method of a power supply printed circuit board and a power supply printed circuit board formed by use of the processing method, for the purpose of solving the problems of poor voltage-withstanding capability of a conventional power supply printed circuit board and inconvenient assembling due to large board thickness in the prior art. The processing method of the power supply printed circuit board comprises the following steps: manufacturing an internal layer core plate, providing a soft plate copper-clad plate as the inside core plate, wherein the soft plate copper-clad plate comprises a polyimide substrate and copper coil layers arranged at the two opposite surfaces of the polyimide substrate; performing plasma coarsening processing on the surfaces of the copper foil layers; performing lamination and pressing to form a multilayer circuit board; performing boring processing on the multilayer circuit board and forming a conducting hole; performing plasma glue removing; and performing metallization processing on the conducting hole and forming an external line graph on an external copper layer. According to the processing method, the soft plate copper-clad plate is taken as the internal layer core plate, the voltage withstanding capability of the soft plate copper-clad plate is improved, and the thickness of the power supply printed circuit board is effectively reduced.
Owner:SHENZHEN SUNTAK MULTILAYER PCB

Preparation method of polyimide/ladder-like polysiloxane double-sided anisotropic composite thin film

The invention relates to a preparation method of a polyimide/ladder-like polysiloxane double-sided anisotropic composite thin film, which belongs to the field of polymer materials. The existing polyimide/organic siloxane composite thin film is prepared by introducing a poly-linear siloxane chain segment into a polyimide substrate through the copolymerization method or the doping method, and the prepared thin film has low mechanical property, low thermal resistance and great brittleness. The preparation method comprises the steps of using gamma-aminopropyltriethoxysilane and polyamic acid for carrying out reaction, utilizing hydrolytic condensation of the gamma-aminopropyltriethoxysilane for introducing ladder-like polysiloxane into the polyamic acid, and carrying out curing for preparing the polyimide/ladder-like polysiloxane double-sided anisotropic composite thin film. Compared with the prior art, the method can simultaneously maintain the mechanical property of the thin film while preparing the double-sided anisotropic composite thin film, and also solve the brittleness problem of the thin film and the obvious decline problem of the thermal performance. Simultaneously, the preparation method has the advantages of simple reaction steps, strong operationability, no toxicity, no pollution, easy industrialization and the like.
Owner:BEIJING UNIV OF CHEM TECH
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