The application discloses a high-temperature
pressure sensing chip based on a
single crystal silicon wafer and a three-dimensional integration method, and a manufacturing process of the
chip comprises a
force sensing resistor manufacturing step, an insulation isolation step, a high-temperature-resistant
electrode and
interconnection manufacturing step, a pressure-sensitive diaphragm
etching step and a bonding step. The application uses a method of
etching an insulation isolation groove around the
force sensing resistor, filling and covering an
insulation layer and precisely
etching a lower layer bulk
silicon of the
force sensing resistor, avoids the problem of failure of a traditional
single crystal silicon pn
junction isolation high-temperature leakage current, does not depend on expensive materials such as SOI wafers and
silicon carbide wafers, uses a general
single crystal silicon
wafer to realize mutual insulation isolation between
Wheatstone bridge force sensing resistors, and meets high-temperature working requirements. The proposed air-tight leadless bonding method based on a
through silicon via further improves the reliability of the
pressure sensing chip. Meanwhile, the manufacturing method is fully compatible with a silicon-based
CMOS process, and on-chip
system integration can be realized.