35results about How to "Improve failure rate" patented technology

The present invention provides, as a pressure swing adsorption type oxygen concentrator aiming to be used for the home oxygen therapy, and having the device reliability ensuring a low failure occurrence rate, and the adsorption performance stability, ensuring the stable oxygen concentration performance even over a long period, a pressure swing type oxygen concentrator having at least one adsorption column charged with an adsorbent capable of preferentially adsorbing nitrogen rather than oxygen, and an air compressor for pressure supplying and/or vacuum exhausting air to and/or from the adsorption column, characterized by including a nonwoven fabric filter for collecting sealing material wear particles in an air channel between the adsorption column and the air compressor.

The invention provides a method for designing a high-safety chip active shielding physical protection structure. The chip active physical protection structure has the function that a high-safety chip is prevented from being attacked in an intrusive mode, for example the high-safety chip is tampered or detected in a physical mode. Single-layer metal wires are active shielding wires and the active shielding wires are fully distributed on the surface of the chip. In order to protect a lower-layer physical pattern against attack, the smallest design rule is usually adopted by the metal wires. If patterns designed according to the smallest rule are fully distributed on the chip, the possibility that the chip circuit functional performance failure caused by particle contamination is increased. In order to reduce the volume production chip circuit failure, the width and/or the spacing of the active shielding wires are/is usually widened. If the size of each active shielding wire is widened, the safety of the chip can be reduced. In order to solve the problem of the contradiction between the safety of the chip and the yield of the volume production products, the pitch-variable active shielding physical production structure is further provided, so that dual-improvement in the safety and the yield of the chip products is achieved.

The invention discloses a coil assembly structure and a magnetoelectric crankshaft speed sensor. The coil assembly structure comprises a coil frame and a coil, wherein the coil frame has a winding groove, and the coil is wound within the winding groove of the coil frame. A sidewall of the winding groove is provided with a lead groove recessed to the outside. The lead groove extends from the insideof the winding groove outwards to a surface of the coil frame. The recess of the lead groove is filled with an incoming line of the coil, which enters the winding groove along the lead groove, so that a spacing distance created by the incoming line of the coil filling the recess is at least formed between the incoming line of the coil and an outer layer winding line of the coil. The invention canimprove voltage withstand reliability between the incoming line and coil winding line without changing the magnetization and number of windings of the coil assembly structure.

The invention discloses a dual-channel transmitting assembly for a phased-array antenna of a carrier rocket relay user terminal. The dual-channel transmitting assembly comprises a first channel radiofrequency circuit and a second channel radio frequency circuit, wherein the first channel radio frequency circuit comprises a first channel numerical control phase shifter, a first channel driving amplifier, a first channel power amplifier, a first channel microstrip directional coupler, a first channel single-section isolator and a first channel detection diode connected with the first channel microstrip directional coupler, which are connected in sequence; and the second channel radio frequency circuit comprises a second channel numerical control phase shifter, a second channel driving amplifier, a second channel power amplifier, a second channel microstrip directional coupler, a second channel single-section isolator and a second channel detection diode connected with the second channelmicrostrip directional coupler which are connected in sequence. Compared with a single-channel phase-shifting transmitting assembly, the phased-array antenna transmitting assembly is compact in structure, the array area of a phased-array antenna can be reduced, and the weight of the whole phased-array antenna is reduced.

The invention discloses an MRI compatible artificial cochlea magnet. The magnet comprises a base, an upper shell, a holding mechanism, a plurality of magnets and a lower shell, wherein the upper shelland the lower shell form a closed space, the holding mechanism and the magnets are contained in the closed space, the base is in a circular ring shape with threads, the bottom face of the upper shellis in a circular bowl shape, and the periphery of the upper shell is provided with threads; the lower shell is in a disc shape and covers the bowl-shaped opening of the upper shell, and the upper shell and the lower shell are assembled in the base. The magnet is arranged in the holding mechanism, consists of an N pole and an S pole which are axisymmetric, and can rotate at any angle by taking a central shaft as a center in the holding mechanism; the outer portion of the maintaining mechanism is in a cake shape, and the maintaining mechanism can rotate at any angle with the cake-shaped circlecenter as the axis in a closed space formed by the upper shell and the lower shell. The magnet can rotate at any angle in the maintaining mechanism according to the change of the direction of an external magnetic field, and the whole disc shape of the maintaining mechanism can also rotate at any angle with the circle center as the center.

The invention provides a method for increasing breakdown voltage of a gate oxide layer of a groove-type VDMOS (Vertical Double-diffused Metal Oxide Semiconductor) device. The method comprises the following steps of providing a silicon substrate with an epitaxial layer, forming an initial oxide layer on the epitaxial layer of the silicon substrate, performing photoetching and etching, forming an active region graph on the initial oxide layer, performing ion injection, forming an active region in the epitaxial layer below the active region graph, performing the photoetching, forming a photoresist layer with a loop region graph and a gate graph, sequentially performing wet method etching and dry method etching, forming the loop region graph and the gate graph on the initial oxide layer, performing the ion injection, forming a loop region in the epitaxial layer below the loop region graph, removing the photoresist layer, forming a hard mask on the epitaxial layer and the initial oxide layer, performing the etching, forming a groove in the active region, removing the hard mask, and forming a gate above the gate graph. The method can effectively remove a damaged part on the surface of the epitaxial layer of the silicon substrate caused by operation such as the etching, so that the quality of the gate oxide layer of the device can be ensured.

The invention discloses a backside laser membrane opening method of a back passivation solar cell. The backside laser membrane opening method comprises a laser grooving process and a dust removal process and is characterized in that the dust removal process is a pressurized gas blowing process synchronously carried out with the laser grooving process. Meanwhile, the invention also discloses a backside laser membrane opening system applying the above method of the back passivation solar cell. The backside laser membrane opening system comprises a laser grooving device and a dust removal device and is characterized in that the dust removal device is a pressurized gas blowing air knife, wherein the pressurized gas blowing air knife is arranged at a starting point position of laser grooving. By the method and the system, the problem of dust attachment during back surface laser grooving of the back passivation solar cell in the prior art is solved. With the method and the system, the back passivation process is simplified, the parallel resistance of a cell piece is improved, the reverse electric leakage is reduced, and the power loss of a module is reduced.

The invention relates to the manufacture method of gas-sensitive elements, and provides a micromachining method of a gas-sensitive element with a gas-exchanging forcing cold-heat pump. With the method provided by the invention, a problem of exhausted areas easily appeared around sensitive elements is solved, linearity and performance of the gas-sensitive element is improved, and a calibration period of the gas-sensitive element is prolonged. The method comprises the following steps: deposing to obtain an aluminum film, replicating a cold-heat pump figure, manufacturing an aluminum oxide (Al2O3) film, heat treating, metallizing, and fixing by bonding. With the gas-sensitive element manufactured with the method, gas exchanging is forced between exhaust gas discharged from an element internal detection process and extraneous new gas requiring detection. A gas exchanging circulation is formed in a gas chamber of the gas-sensitive element, and validity and reliability is ensured in gas-sensitive element detection. Meanwhile, failures of the sensitive element due to coking are reduced. The invention assists in the selection and application of detecting monitors.

The invention discloses a manufacturing method of a miniature thermoelectric device. The manufacturing method comprises the following specific steps: 1) designing a steel mold according to the size and pattern of an electrode substrate of the miniature thermoelectric device; (2) placing a dispensed electrode substrate 1 in a groove of the steel mold obtained in the step (2), and enabling a glue point of the electrode substrate 1 to correspond to a through hole of a limiting plate of the steel mold; 3) putting cut thermoelectric particles into the through hole of the limiting plate of the steelmold; 4) welding the whole steel mold together with the electrode substrate 1 and the thermoelectric particles to obtain a semi-finished product of the micro thermoelectric device; and 5) after demolding the semi-finished product of the micro thermoelectric device, welding the electrode substrate 2 on the other side to obtain the micro thermoelectric device. According to the method, precise arrangement of the micro particles is achieved, meanwhile, in the welding process, the positions of the particles are fixed, the welding precision of the micro thermoelectric device substrate and the particles is guaranteed, finally, the high-precision micro thermoelectric device is manufactured, the whole process is rapid and efficient, and large-scale production and use are facilitated.

The invention provides a power equipment controlling and system. According to the invention, a guiding and controlling terminal obtains identification information of power equipment and sends the identification information to an electric power data service monitoring end; the electric power data service monitoring terminal sends electric power equipment controlling and guiding information corresponding to the identification information to the guiding and controlling terminal according to the identification information; and the guiding and controlling terminal displays the power equipment controlling and guiding information. The system enables the control of the power equipment to be more humanized and simplified, and improves the experience of operators; the power equipment gives controlling and guiding information to help an operator to learn and use the power equipment as soon as possible; and interaction is performed in a voice or video mode for guidance, so the use difficulty of the power equipment is effectively reduced, and user experience is improved. The user operation is guided through the power equipment, improper use behaviors of the user are reduced, and the stability of the power system is improved.

The invention discloses a compression atomizer. The compression atomizer comprises a bottom cover, a main body, a side belt and an upper cover, wherein a fixing plate is arranged on the surface of themain body, the fixing plate comprises a vertical part and a horizontal part, fixing rods are symmetrically arranged on the surface of the horizontal part of the fixing plate, and a rotary drum is arranged on the outer side of each fixing rod in a sleeving manner; a pressing mechanism is arranged on the surface, located between the two fixing rods, of the horizontal part of the fixing plate, the pressing mechanism comprises a stabilizing rod, a pressing rod, a first spring and a connecting block, the stabilizing rod is in a vertical state, a limiting mechanism is arranged on the outer side ofthe pressing rod, and the limiting mechanism comprises a connecting plate and two limiting half rings; and the pressing rod sequentially penetrates through the connecting plate, the first spring and the stabilizing rod and is connected with the connecting block. An overlong air supply pipe is wound in annular grooves in the rotary drums for several circles, the air supply pipe is pressed by the limiting semi-rings, and the situation that connection is not stable enough due to the fact that the overlong air supply pipe is pulled is avoided.

A method of forming a non-volatile memory cell is provided. The method comprises: (a) providing a substrate; (b) forming a stacking structure on the substrate, the stacking structure at least comprising an oxide-nitride-oxide layer (ONO layer) and a polysilicon layer thereon; (c) patterning the stacking structure to form a plurality of separated stacking units, each two stacking units having an aperture therebetween; (d) forming a source region and a drain region buried in the substrate at two sides of the each stacking unit; (e) forming an oxide layer in the aperture and over the stacking units; and (f) performing a chemical mechanical polishing (CMP) process to remove the oxide layer over the stacking units and outside the aperture.

The invention discloses an SMD solid-state capacitor and a manufacturing method thereof. A manufacturing method of an SMD solid-state capacitor comprises the following steps: putting a polymerized core package into a shell, sleeving a rubber plug on a guide pin of the core package, and controlling a gap between the rubber plug and the core package; then sealing, and controlling the top plane of a seal to be higher than the top surface of the rubber plug by a certain gap; and then aging and processing forming are carried out, wherein the processing forming comprises the steps of flattening the guide pin, assembling the base and bending the guide pin to be placed in the base groove. According to the manufacturing method, the interval between the rubber plug and the core package is controlled, and the top plane of the sealing opening is controlled to be higher than the top surface of the rubber plug by a certain gap, so that the damage to a product in the SMD forming process can be reduced, the product characteristics are stabilized, the generation of badness is reduced, and the failure rate of an application end after reflow soldering is improved.

The invention discloses a non-polar a-surface GaN-based ultraviolet photoelectric detector and a preparation method thereof. The ultraviolet photoelectric detector comprises an ultraviolet photoelectric detector epitaxial wafer, a Si3N4 passivation layer deposited on the ultraviolet photoelectric detector epitaxial wafer, and a Schottky interdigital electrode of an asymmetric MSM structure. The ultraviolet photoelectric detector epitaxial wafer comprises a non-polar a-surface AlN buffer layer, a non-polar a-surface AlxGa1-xN buffer layer with gradually changed components and a non-polar a-surface GaN epitaxial layer which are sequentially grown on an r-surface sapphire substrate, wherein x is equal to 0.2-0.8; the Si3N4 passivation layer is arranged on the non-polar a-surface GaN epitaxial layer; and the Schottky interdigital electrode penetrates through the Si3N4 passivation layer and is in direct contact with the non-polar a-surface GaN epitaxial layer on the ultraviolet photoelectric detector epitaxial wafer. According to the invention, the high-performance non-polar a-surface GaN ultraviolet photoelectric detector is realized, the dark current of the device is reduced, and the stability is improved.

The present invention provides a method for fabricating an embedded static random access memory, including providing a semiconductor substrate; defining a logic area and a memory cell area on the semiconductor substrate and defining at least a first conductive device area and at least a second conductive device area in the logic area and the memory cell area respectively; forming a patterned mask on the memory cell area and on the second conductive device area in the logic area and exposing the first conductive device area in the logic area; performing a first conductive ion implantation process on the exposed first conductive device area in the logic area; and removing the patterned mask.