9 results about "Metalorganics" patented technology

The invention relates to an ultrathin continuous metal film and a preparation method and application thereof, and the preparation method comprises the following steps: (1) in an atomic layer deposition system, carrying out first deposition on a substrate by using a metal organic matter precursor to obtain a pretreated substrate; wherein the surface of the pretreated substrate is provided with a monomolecular layer; (2) depositing a metal film on one side, far away from the substrate, of the monomolecular layer in the pretreated substrate by adopting physical vapor deposition to obtain the ultrathin continuous metal film; and the thickness of the ultrathin continuous metal film is less than or equal to 10nm. According to the method, the monomolecular layer is formed on the substrate, then the metal film is deposited on the monomolecular layer through physical vapor deposition, the monomolecular layer can enhance interaction between the substrate and the metal film, migration and agglomeration of metal atoms on the surface of the substrate in the deposition process of the metal film are further restrained, and therefore the metal film is formed. Therefore, the threshold value of the continuous thickness of the metal film is remarkably reduced, and the ultrathin continuous metal film with the thickness smaller than or equal to 10 nm is obtained

This invention belongs to the technical field of heterojunction bipolar transistors (HBTs), specifically relating to a HBT and its MOCVD epitaxial growth method. The HBT provided by this invention includes a transition layer disposed between the base region and the emitter layer. The MOCVD epitaxial growth method includes growing the transition layer on the surface of the base region using a linearly variable-temperature staged pulsed metal-organic chemical vapor deposition (MOCVD) method. During the total growth time of the linearly variable-temperature staged pulsed MOCVD method, PH3 is continuously introduced, and trimethylindium, trimethylgallium, and silane are introduced in single-cycle staged pulses. From the initial time T1 to the initial time TN, the reaction chamber temperature linearly increases from the base region growth temperature to the emitter layer growth temperature. The HBT obtained by the method provided by this invention has high gain, low sheet resistance, and high reliability.

The present application relates to the technical field of metal organic chemical vapor deposition, and provides a MOCVD heating device for inhibiting deformation and a MOCVD equipment.The device comprises a heating body assembly composed of inner, middle and outer ring heating bodies, and the key lies in that the heating body is supported by a heating body plate type support strip in linear contact, and a protrusion is arranged in a groove on the support strip to reduce contact stress and thermal deformation.A plurality of heat insulation assemblies are arranged at the lower part of the device, the heat insulation plates are supported by profiled heat insulation support plates in plate strip type linear contact, and the thickness and spacing distribution of the heat insulation plates are optimized, and a self-supporting reflective heat insulation ring is integrated to improve the heat insulation effect.The outer ring heating body is designed to be thickened and narrowed to compensate for the loss of edge heat.The planeness, stability and thermal field uniformity of the heating body are significantly improved through multiple structure optimization, so that the deformation is effectively inhibited, and the epitaxial film forming quality is improved.

The invention belongs to the technical field of metal organic chemical vapor deposition (MOCVD) equipment, and particularly relates to a low-stress MOCVD graphite base and deposition equipment. The graphite base comprises a base body, and at least one stress releasing groove is formed in the outer circle area of the base body. The stress release grooves can be formed in the working face and / or the side face of the outer circle of the base body, additional deformation space is provided for materials, and the stress distribution path is changed, so that stress concentration of the base body in the high-temperature service process is effectively reduced, especially the tensile stress at the outer circle is effectively reduced, and the service life of the base body is prolonged. Therefore, the surface silicon carbide coating is prevented from generating microcracks due to overlarge stress, the corrosion resistance of the graphite base is remarkably improved, and the service life of the graphite base is remarkably prolonged. The stress can be reduced by 35% at most, and the service life of the base is prolonged by 22%. Meanwhile, the invention further relates to metal organic chemical vapor deposition equipment comprising the graphite base.

This invention discloses an epitaxial growth method for improving the crystallinity quality of boron nitride (BN) two-dimensional materials. Based on epitaxial growth methods such as metal-organic chemical vapor deposition (MOCVD), this method enhances the catalytic activity of the substrate surface by growing an aluminum nitride transition layer on the single-crystal substrate, thereby reducing the activation energy required for subsequent nucleation of BN two-dimensional materials. A silicon nitride isolation layer is introduced to reduce the introduction of impurities from the substrate into the BN two-dimensional material. Furthermore, a zero-transition process is introduced at the aluminum nitride transition layer / BN two-dimensional material interface to reduce disturbances in the interface temperature and flow fields, thus improving the ordered nucleation of the BN two-dimensional material and enhancing its crystallinity quality. This epitaxial growth method can achieve BN two-dimensional materials with smooth surfaces and high crystallinity, promoting the performance improvement of novel devices such as BN-based deep ultraviolet optoelectronic devices and van der Waals heterojunctions.

The invention provides a method for enhancing bonding strength between diamond particles and a copper matrix, and relates to the technical field of preparation of diamond-copper composite materials. According to the method, laser perforation, acid pickling treatment, ultrasonic cleaning treatment, activating treatment, ultrasonic mixing and drying and ultrasonic mixing and drying final heat treatment are carried out on diamond particles, so that the diamond-copper composite material capable of being tightly combined with copper is obtained. The metal organic matter and the surfaces of the diamond particles are compositely connected, and the bonding strength between the diamond particles and a copper matrix is improved. The diamond-copper composite material prepared by the method disclosed by the invention can be synergistically improved in heat-conducting property and mechanical property, and is simple, convenient and easy to operate, low in cost, low in energy consumption, high in efficiency and beneficial to industrial large-scale production and popularization.

The application belongs to the technical field of semiconductor material preparation, and particularly relates to a gallium oxide thin film material and an epitaxial growth method thereof, which comprises a substrate and a gallium oxide epitaxial layer, and an indium oxide thin film layer is inserted between the substrate and the gallium oxide epitaxial layer; a layer of indium oxide thin film is grown on the substrate, since indium oxide and gallium oxide belong to the same group, the lattice mismatch between them is small, the mismatch stress between gallium oxide and the substrate can be relieved, and therefore the quality of the gallium oxide epitaxial thin film can be effectively improved; the metal organic chemical vapor deposition method used in the application has a relatively simple process, the growth thickness is accurately controllable, and the surface flatness of the grown sample is high, and the quality of the gallium oxide epitaxial thin film is further improved.

The invention discloses a zero discharge method for high-salt and high-complexity wastewater in the lithium battery industry and an integrated treatment system, and relates to the field of wastewater treatment. The wastewater zero discharge method comprises the following steps: collecting lithium battery wastewater into an adjusting tank, and adjusting water quality and water quantity; adding a composite decomplexing agent composed of ethylenediaminetetraacetic acid salt, sulfite and ferrous sulfate into the adjusted wastewater, and destroying a heavy metal-organic matter complex through a redox and chelation competition effect; adding a sulfide solution into the wastewater subjected to complex breaking, and removing heavy metal sulfide precipitates; adjusting the pH value of the wastewater subjected to primary precipitation to 7.0-7.5, adding modified calcium chloride and polyaluminum chloride into the wastewater, and removing fluoride through precipitation. Through the synergistic effect of complex disassembly, fractional precipitation, enhanced biochemical treatment, catalytic oxidation and membrane separation, deep removal of various pollutants is achieved, the removal rate of heavy metal ions can reach 99.9% or above, and the removal rate of organic matter COD can reach 95% or above.

The application discloses a high-uniformity gallium nitride heterojunction material structure and an epitaxial growth method, and relates to the technical field of semiconductor single crystal thin films.The material structure comprises, from bottom to top, a SiC substrate, an AlN nucleation layer, a GaN buffer layer, an InAlGaN interlayer and an AlGaN barrier layer.The material is prepared on the substrate by a metal organic chemical vapor deposition method.The InAlGaN interlayer can enhance the confinement of carriers in the heterojunction quantum well and improve the two-dimensional electron gas mobility.Compared with a conventional AlN interlayer, the InAlGaN interlayer has a smaller lattice mismatch degree with the GaN buffer layer, is not prone to lattice relaxation, has a larger thickness selection window, is easy to control in process, and the increase of the number of atomic layers of the interlayer is beneficial to improving the uniformity and consistency of the electrical characteristics of the gallium nitride high electron mobility transistor material.The InAlGaN interlayer is grown by a gradual temperature rising process, so that the surface quality of the interlayer can be effectively improved and the influence of temperature rising on the material performance can be avoided.