31 results about "Metalorganics" patented technology

Disclosed in the present application are an anti-corrosion coating, a preparation method therefor, and a use thereof, and a coated product. The raw material components of the anti-corrosion coating in parts by weight include 30-44 parts of an epoxy resin and 1-10 parts of an organic azole-modified metal-organic framework material.

The invention relates to a preparation process of nano bismuth telluride, and belongs to the technical field of preparation of nano bismuth telluride, and the preparation process comprises the following steps: preparing a bismuth-based metal organic framework; carrying out coordination conversion on tellurate; calcining to remove organic conversion; and synthesizing bismuth telluride by a solvothermal method. The hexagonal flaky bismuth telluride with the average particle size of 200-300nm and reasonable particle size step-by-step is prepared through metal organic framework templating synthesis, the thermoelectric performance of the hexagonal flaky bismuth telluride is far better than that of a common bismuth telluride material, and the morphology and the particle size of the bismuth telluride are accurately controlled through metal organic framework templating accurate control so as to improve the thermoelectric performance of the bismuth telluride.

The invention belongs to the technical field of in-situ remediation of contaminated soil, and relates to an in-situ electric reinforced persulfate remediation method and device for heavy metal-organic matter combined contaminated soil. In the method, heavy metals in a soil medium are migrated out of a soil environment under the action of an electric field while the migration of persulfate is promoted by an electric technology, and the soil temperature is continuously increased by electric field heat along with the proceeding of an electric experiment, so that the activation of the persulfate is realized, and the degradation of pollutants is promoted; under the combined action of the electric field force and active substances generated by the persulfate, remediation of the heavy metal-organic matter combined contaminated soil is achieved. The problems that at the present stage, persulfate is short in migration distance in a soil medium and low in activation efficiency, and the remediation effect of heavy metal-organic matter combined contaminated soil is poor are solved, heavy metal-organic matter synchronous removal is achieved, meanwhile, electric field heat is utilized to the maximum extent, the defect of energy waste of an electric technology is overcome, and the application prospect is wide. And the removal efficiency of pollutants is effectively improved.

The invention provides a solid additive and a preparation method thereof, positive electrode slurry, a positive plate and a lithium ion battery. The preparation method of the solid additive comprises the following steps: carrying out polymerization reaction on raw materials comprising an organic compound and a functional compound to obtain the solid additive, wherein the organic compound is a pyrene compound and / or an organic framework compound; the pyrene compound is a 1, 3, 6, 8-tetra (4 '-formylbenzene) pyrene ligand and / or 4, 4', 4 '', 4 ''-(pyrene-1, 3, 6, 8-tetrayl) tetraphenylamine; the organic framework compound is a covalent organic framework material COFs and / or a metal organic framework material MOFs; the functional compound is a crown ether compound and / or a Bispidine compound. The solid additive obtained by the preparation method can selectively capture manganese ions, so that the manganese ions are prevented from being dissolved out from a positive electrode, and the cycle stability and the cycle life of the positive electrode are improved.

The invention belongs to the field of semiconductor materials, and discloses a method for preferentially growing an epsilon-phase gallium oxide epitaxial film through oxygen flow regulation and control. The preparation method comprises the following steps: cleaning a sapphire substrate, and putting the sapphire substrate into a cavity of a metal organic chemical vapor deposition system; setting air pressure in the reaction cavity, introducing carrier gas, raising the temperature to a first preset temperature, introducing first preset high-flow oxygen, and entering a substrate high-oxygen preheating stage; raising the temperature to a second preset temperature, opening the gallium source, introducing second preset low-flow oxygen, and entering an epitaxial low-oxygen growth stage; closing the gallium source, introducing third preset high-flow oxygen, and entering an in-situ high-oxygen annealing stage; and after annealing is finished, recovering normal pressure, cooling to room temperature, and taking out to obtain the epsilon-phase gallium oxide epitaxial film. The pure phase property and the crystal quality of the epsilon-phase gallium oxide epitaxial film are improved in an oxygen flow regulation and control mode, and a way is laid for subsequent preparation of electronic and power devices.

The present invention discloses a method for preparing a hexagonal tantalum pentoxide single crystal thin film, belonging to the technical field of optoelectronic information functional materials. Using tantalum ethoxide as an organometallic compound material and high-purity oxygen as the oxidizing gas, a twin-free hexagonal tantalum pentoxide single crystal thin film is prepared on a hexagonal lanthanum fluoride single crystal substrate using metal organic chemical vapor deposition equipment. The hexagonal tantalum pentoxide single crystal thin film prepared by the present invention has high single crystal quality and good stability, and therefore has good application prospects in the field of semiconductor devices.

1. The name of the design product: wafer carrier. 2. The use of the design product: used for carrying wafer in the reaction chamber of the metal organic chemical vapor deposition equipment. 3. The design points of the design product: in shape. 4. The picture or photo that can best show the design points: perspective view. 5. The right view is symmetrical with the left view, and the right view is omitted; the rear view is symmetrical with the front view, and the rear view is omitted.

The utility model discloses a novel landfill leachate treatment system which comprises a high-density sedimentation tank, an outdoor regulating tank, an activated carbon and sand added high-density sedimentation tank, a denitrification and nitrification tank, a denitrification tank, a biological rotary disc filter and a nanofiltration system which are connected in sequence. Then enabling the filtrate to enter an adjusting tank containing a titanium dioxide photocatalyst at the periphery for photocatalysis, and degrading part of refractory organic matters into CO2 and H2O; effluent enters Actiflocarb, and particulate matters, heavy metals, organic matters, chromaticity and the like are removed through combination of activated carbon and coagulation and flocculation; then entering a Biostyr NDN and a Biostyr PDN, and carrying out biochemical treatment, so as to degrade ammonia nitrogen; effluent enters nanofiltration through the biological rotating disc, so that organic matters, multivalent ions, chromaticity and SS in water are further removed, and the effluent is discharged after reaching the standard.

The present invention belongs to the technical field of lithium-ion battery electrode materials, and particularly relates to a modified ternary cathode material and a preparation method thereof. By combining a water washing process and adopting a wet coating method, the present invention proposes a preparation method for a modified ternary cathode material with low residual alkali. This method can not only remove lithium impurities such as LiOH and Li2CO3 remaining on the ternary cathode material, but also significantly improve the cycle stability of the ternary cathode material, and has the prospect of industrial production application. In the present invention, surface modification is carried out while washing with water. A metal-containing organic compound is sintered at high temperature to obtain a metal oxide and form a coating layer, and at the same time, metal ions will also penetrate and dope into the interior of the ternary cathode. The surface modification not only reduces the pulverization and fragmentation of NCM particles during cycling, but also effectively stabilizes the crystal structure of NCM, reduces cation mixing and the formation of rock salt structure, thereby improving the electrochemical stability of the electrode.

The invention relates to an ultrathin continuous metal film and a preparation method and application thereof, and the preparation method comprises the following steps: (1) in an atomic layer deposition system, carrying out first deposition on a substrate by using a metal organic matter precursor to obtain a pretreated substrate; wherein the surface of the pretreated substrate is provided with a monomolecular layer; (2) depositing a metal film on one side, far away from the substrate, of the monomolecular layer in the pretreated substrate by adopting physical vapor deposition to obtain the ultrathin continuous metal film; and the thickness of the ultrathin continuous metal film is less than or equal to 10nm. According to the method, the monomolecular layer is formed on the substrate, then the metal film is deposited on the monomolecular layer through physical vapor deposition, the monomolecular layer can enhance interaction between the substrate and the metal film, migration and agglomeration of metal atoms on the surface of the substrate in the deposition process of the metal film are further restrained, and therefore the metal film is formed. Therefore, the threshold value of the continuous thickness of the metal film is remarkably reduced, and the ultrathin continuous metal film with the thickness smaller than or equal to 10 nm is obtained

The invention belongs to the technical field of transition group metal organic matter synthesis, and particularly discloses a synthesis method of a VIB group metal precursor, which comprises the following steps: preparing an intermediate (R1N) 2MX2 by using a metal raw material MO2X2 and a compound containing a [R1N = C] structure to react; a step of reacting the intermediate with an alkaline substance M0 (NR2R3) y to obtain a Group VIB metal precursor (R1N) 2M (NR2R3) 2; wherein M is Mo or W, X is halogen, R1 is selected from C1-C10 alkyl groups, R2 and R3 are independently selected from at least one of H and C1-C10 alkyl groups, M0 is alkali metal or alkaline earth metal, and y is valence of M0. The synthesis method is simple and efficient in overall reaction route, short in time consumption, high and stable in reaction yield and suitable for industrial production and use, the obtained product is easier to purify, and the purity of the purified product can reach the grade larger than or equal to 6N.

This invention belongs to the technical field of heterojunction bipolar transistors (HBTs), specifically relating to a HBT and its MOCVD epitaxial growth method. The HBT provided by this invention includes a transition layer disposed between the base region and the emitter layer. The MOCVD epitaxial growth method includes growing the transition layer on the surface of the base region using a linearly variable-temperature staged pulsed metal-organic chemical vapor deposition (MOCVD) method. During the total growth time of the linearly variable-temperature staged pulsed MOCVD method, PH3 is continuously introduced, and trimethylindium, trimethylgallium, and silane are introduced in single-cycle staged pulses. From the initial time T1 to the initial time TN, the reaction chamber temperature linearly increases from the base region growth temperature to the emitter layer growth temperature. The HBT obtained by the method provided by this invention has high gain, low sheet resistance, and high reliability.

The present invention relates to the technical field of polymer synthesis and depolymerization. Disclosed is a method for preparing a polycarbonate polyol by mean of organocatalyzed irreversible polycondensation. The method comprises the following step: preparing a diol substrate and diphenyl carbonate into a polycarbonate polyol under the action of an organic catalyst by means of polycondensation of a carbonic ester. In the present invention, a polycarbonate polyol having a high added value can be efficiently synthesized by means of the catalytic system. Compared with catalysis by using inorganic matters and metal organic matters in the prior art, the present invention has the characteristics of a high selectivity, wide application, etc. The polycarbonate polyol is a material having good hydrolysis resistance, light resistance, oxidation degradation resistance and heat resistance, can be used for preparing elastomers, paints, coatings or adhesives, has a high strength, good weather resistance, chemical stability, etc., and has a great commercial application potential in the fields of microelectronics industry, chip packaging, buildings, medical treatment, etc.

The present invention relates to the field of battery technology, and in particular to a biomass hard carbon negative electrode material for sodium ion batteries, its preparation method, and application. The preparation method comprises the following steps: S1. Preparing a pre-oxidized hard carbon precursor material using sodium lignin; S2. Evenly mixing a catalyst, a metal organic compound, and the pre-oxidized hard carbon precursor to prepare a porous metal-doped hard carbon precursor material; S3. Transferring the porous metal-doped hard carbon precursor material to a tubular furnace, introducing a carbon source mixed gas for carbonization, and obtaining a biomass hard carbon negative electrode material. The present invention obtains the pre-oxidized hard carbon precursor material by oxidizing sodium lignin, and chemically reacting it with the metal organic compound to improve the electronic conductivity and structural stability of the material.

The present application relates to the technical field of metal organic chemical vapor deposition, and provides a MOCVD heating device for inhibiting deformation and a MOCVD equipment.The device comprises a heating body assembly composed of inner, middle and outer ring heating bodies, and the key lies in that the heating body is supported by a heating body plate type support strip in linear contact, and a protrusion is arranged in a groove on the support strip to reduce contact stress and thermal deformation.A plurality of heat insulation assemblies are arranged at the lower part of the device, the heat insulation plates are supported by profiled heat insulation support plates in plate strip type linear contact, and the thickness and spacing distribution of the heat insulation plates are optimized, and a self-supporting reflective heat insulation ring is integrated to improve the heat insulation effect.The outer ring heating body is designed to be thickened and narrowed to compensate for the loss of edge heat.The planeness, stability and thermal field uniformity of the heating body are significantly improved through multiple structure optimization, so that the deformation is effectively inhibited, and the epitaxial film forming quality is improved.

1. The name of the design product: water treatment device. 2. The use of the design product: to remove impurities, heavy metals, organic matter and other harmful substances in water, thereby obtaining a high-purity water source. 3. The design points of the design product: the combination of shape and pattern. 4. The picture or photo that best indicates the design points: perspective view. 5. The bottom surface is an uncommon surface, and the top view is omitted.

The present description relates to a method of manufacturing a device comprising micrometer or nanometer sized wires (22) containing a III-V compound, the method comprising, for each wire, forming at least a portion (24) of the wire by a step of metal-organic vapor phase epitaxy, the step of metal-organic vapor phase epitaxy comprising: injecting into a reactor a first precursor gas of a group V element, a second precursor gas of a group III element and a third precursor gas of an additional element being a dopant of the III-V compound, the third precursor gas of the additional element in the gas providing a dopant concentration in the portion of the wire of more than 5.10 19 atoms / cm 3 , for example more than 1.10 20 atoms / cm 3 .

The invention discloses a laminated gate dielectric p-GaN enhanced HEMT (High Electron Mobility Transistor) device and a preparation method thereof. According to the device, an AlN layer is grown in a metal organic chemical vapor deposition mode to serve as a gate dielectric layer, a silicide / metal oxide lamination layer is adopted as a contact passivation layer and a gate dielectric of the device to suppress current collapse, and the breakdown characteristic of the device is improved. The forbidden bandwidth of AlN is large (about 6.0 ev), a polarization effect is generated when the AlN is in contact with the metal oxide thin film, the AlN serves as a gate medium of the p-GaN HEMT device, the influence of threshold voltage drift of the device can be improved while gate electric leakage can be effectively restrained, and the overall performance of the device is improved.

The invention discloses an n-type doped tantalum pentoxide film and a preparation method thereof, and belongs to the technical field of optoelectronic information functional materials. The tungsten-doped tantalum pentoxide film is prepared on a substrate by using tantalum ethoxide as an organic metal compound material, tungsten hexacarbonyl as a doping source and high-purity oxygen as an oxidizing gas and adopting metal organic chemical vapor deposition equipment. The prepared tungsten-doped tantalum pentoxide thin film material has good n-type semiconductor characteristics, so that the tungsten-doped tantalum pentoxide thin film material has good application prospects in the field of semiconductor devices.

The application relates to a preparation process of nanometer bismuth telluride, and belongs to the technical field of nanometer bismuth telluride preparation, which comprises the following steps: preparing a bismuth-based metal organic framework; performing coordination conversion on tellurite; performing calcination and organic conversion; and performing solvent thermal method synthesis on bismuth telluride. The bismuth telluride with the average particle size of 200-300 nm and the reasonable particle size step is synthesized through metal organic framework templating, and the thermoelectric performance of the bismuth telluride is far higher than that of common bismuth telluride materials. The morphology and particle size of the bismuth telluride are accurately controlled through metal organic framework templating, so that the thermoelectric performance of the bismuth telluride is improved.

The invention belongs to the technical field of metal organic chemical vapor deposition (MOCVD) equipment, and particularly relates to a low-stress MOCVD graphite base and deposition equipment. The graphite base comprises a base body, and at least one stress releasing groove is formed in the outer circle area of the base body. The stress release grooves can be formed in the working face and / or the side face of the outer circle of the base body, additional deformation space is provided for materials, and the stress distribution path is changed, so that stress concentration of the base body in the high-temperature service process is effectively reduced, especially the tensile stress at the outer circle is effectively reduced, and the service life of the base body is prolonged. Therefore, the surface silicon carbide coating is prevented from generating microcracks due to overlarge stress, the corrosion resistance of the graphite base is remarkably improved, and the service life of the graphite base is remarkably prolonged. The stress can be reduced by 35% at most, and the service life of the base is prolonged by 22%. Meanwhile, the invention further relates to metal organic chemical vapor deposition equipment comprising the graphite base.

This invention discloses an epitaxial growth method for improving the crystallinity quality of boron nitride (BN) two-dimensional materials. Based on epitaxial growth methods such as metal-organic chemical vapor deposition (MOCVD), this method enhances the catalytic activity of the substrate surface by growing an aluminum nitride transition layer on the single-crystal substrate, thereby reducing the activation energy required for subsequent nucleation of BN two-dimensional materials. A silicon nitride isolation layer is introduced to reduce the introduction of impurities from the substrate into the BN two-dimensional material. Furthermore, a zero-transition process is introduced at the aluminum nitride transition layer / BN two-dimensional material interface to reduce disturbances in the interface temperature and flow fields, thus improving the ordered nucleation of the BN two-dimensional material and enhancing its crystallinity quality. This epitaxial growth method can achieve BN two-dimensional materials with smooth surfaces and high crystallinity, promoting the performance improvement of novel devices such as BN-based deep ultraviolet optoelectronic devices and van der Waals heterojunctions.

The present invention belongs to the technical field of heterojunction bipolar transistors, and particularly relates to a heterojunction bipolar transistor and an epitaxial preparation method thereof. In the present invention, a transition layer is provided between the collector region and the base region, and the P-type doped InGaAs transition film layer is grown on the surface of the collector region by pulsed metalorganic chemical vapor deposition. The present invention uses pulsed metalorganic chemical vapor deposition to obtain a P-type doped InGaAs film layer. The pulsed growth method uses an intermittent introduction method of reaction source gases, which can significantly reduce the defect density of the semiconductor epitaxial layer; at the same time, the lattice of the transition layer matches the lattice of the base region, and the quality of the base region material obtained on the transition layer is good and does not change the composition and doping of the base region. Therefore, an HBT epitaxial wafer with low sheet resistance, high gain, and high cut-off frequency can be obtained. Moreover, the present invention does not change the original growth mode of the base region, and the manufacturing cost is low.

The invention provides a method for enhancing bonding strength between diamond particles and a copper matrix, and relates to the technical field of preparation of diamond-copper composite materials. According to the method, laser perforation, acid pickling treatment, ultrasonic cleaning treatment, activating treatment, ultrasonic mixing and drying and ultrasonic mixing and drying final heat treatment are carried out on diamond particles, so that the diamond-copper composite material capable of being tightly combined with copper is obtained. The metal organic matter and the surfaces of the diamond particles are compositely connected, and the bonding strength between the diamond particles and a copper matrix is improved. The diamond-copper composite material prepared by the method disclosed by the invention can be synergistically improved in heat-conducting property and mechanical property, and is simple, convenient and easy to operate, low in cost, low in energy consumption, high in efficiency and beneficial to industrial large-scale production and popularization.

The application discloses a method for removing terminal thioester groups of a polymer, which comprises the following steps: providing a polymer, the terminal of which contains thioester groups; mixing the polymer, an organic solvent, a free radical initiator and a metal organic additive, and fully reacting to remove the terminal thioester groups of the polymer, wherein the metal organic additive is a hydrogenated metal organic compound. The method for removing terminal thioester groups of a polymer in the application is based on the traditional free radical coupling method for removing the terminal thioester groups of a polymer, and a metal organic additive with excellent hydrogen atom providing capacity is added to the system; the metal organic additive can effectively and rapidly combine with the polymer free radicals generated after the removal of thioester, thereby avoiding the broadening of the molecular weight distribution of the polymer caused by the coupling termination of the polymer free radicals, and ensuring that the molecular weight distribution of the polymer remains unchanged while removing the terminal thioester groups of the polymer.

This invention belongs to the field of transition metal organometallic synthesis technology, specifically disclosing a method for synthesizing a Group VIB metal precursor. The method includes: using the metal raw material MO2X2 and [R...] 1 The reaction of compounds with the N=C] structure to prepare intermediates (R) 1 The step of N)2MX2; making the intermediate and alkaline substance M 0 (NR 2 R 3 ) y The reaction yields a Group VIB metal precursor (R) 1 N)2M(NR 2 R 3 Step 2; where M is Mo or W, X is a halogen, and R 1 Selected from C1-C10 alkyl groups, R 2 R 3 At least one alkyl group independently selected from H and C1-C10, M 0 It is an alkali metal or an alkaline earth metal, and y is M. 0 The valence of the compounds. The synthesis method of this invention has a simple and efficient overall reaction route, short reaction time, high and stable reaction yield, and is suitable for industrial production. The obtained product is easier to purify, and the purity of the purified product can reach ≥6N.

The invention provides a silicon-based GaN-HEMT (High Electron Mobility Transistor) epitaxial structure and a manufacturing method, and belongs to the field of semiconductor device design and manufacturing. The GaN-HEMT epitaxial structure is formed on a silicon substrate by adopting a metal organic chemical vapor deposition process; a nucleating layer, a buffer layer, a carbon compensation doped GaN high-resistance layer, a non-doped GaN channel layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer are sequentially grown on the silicon substrate in an epitaxial mode, and when the GaN-HEMT epitaxial structure is grown in an epitaxial mode through MOCVD, the temperature gradient and the gas flow rate in the growth environment are accurately controlled; the thickness uniformity in the epitaxial growth process of the silicon-based AlGaN / GaN HEMT, the Al component uniformity of the AlGaN barrier layer and the warping of the whole epitaxial wafer are improved through the ratio of ammonia gas (NH3) to trimethyl aluminum and trimethyl gallium (TMAl and TMGa) and the auxiliary effect of hydrogen gas (H2), especially through the ratio of ammonia gas (NH3) to trimethyl aluminum and trimethyl gallium (TMAl and TMGa), and through the auxiliary effect of hydrogen gas (H2), the silicon-based AlGaN / GaN HEMT epitaxial growth process is improved; through optimization verification, the method is stable in performance, and is high in batch production yield.

The application belongs to the technical field of semiconductor material preparation, and particularly relates to a gallium oxide thin film material and an epitaxial growth method thereof, which comprises a substrate and a gallium oxide epitaxial layer, and an indium oxide thin film layer is inserted between the substrate and the gallium oxide epitaxial layer; a layer of indium oxide thin film is grown on the substrate, since indium oxide and gallium oxide belong to the same group, the lattice mismatch between them is small, the mismatch stress between gallium oxide and the substrate can be relieved, and therefore the quality of the gallium oxide epitaxial thin film can be effectively improved; the metal organic chemical vapor deposition method used in the application has a relatively simple process, the growth thickness is accurately controllable, and the surface flatness of the grown sample is high, and the quality of the gallium oxide epitaxial thin film is further improved.

The invention discloses a zero discharge method for high-salt and high-complexity wastewater in the lithium battery industry and an integrated treatment system, and relates to the field of wastewater treatment. The wastewater zero discharge method comprises the following steps: collecting lithium battery wastewater into an adjusting tank, and adjusting water quality and water quantity; adding a composite decomplexing agent composed of ethylenediaminetetraacetic acid salt, sulfite and ferrous sulfate into the adjusted wastewater, and destroying a heavy metal-organic matter complex through a redox and chelation competition effect; adding a sulfide solution into the wastewater subjected to complex breaking, and removing heavy metal sulfide precipitates; adjusting the pH value of the wastewater subjected to primary precipitation to 7.0-7.5, adding modified calcium chloride and polyaluminum chloride into the wastewater, and removing fluoride through precipitation. Through the synergistic effect of complex disassembly, fractional precipitation, enhanced biochemical treatment, catalytic oxidation and membrane separation, deep removal of various pollutants is achieved, the removal rate of heavy metal ions can reach 99.9% or above, and the removal rate of organic matter COD can reach 95% or above.

The application discloses a high-uniformity gallium nitride heterojunction material structure and an epitaxial growth method, and relates to the technical field of semiconductor single crystal thin films.The material structure comprises, from bottom to top, a SiC substrate, an AlN nucleation layer, a GaN buffer layer, an InAlGaN interlayer and an AlGaN barrier layer.The material is prepared on the substrate by a metal organic chemical vapor deposition method.The InAlGaN interlayer can enhance the confinement of carriers in the heterojunction quantum well and improve the two-dimensional electron gas mobility.Compared with a conventional AlN interlayer, the InAlGaN interlayer has a smaller lattice mismatch degree with the GaN buffer layer, is not prone to lattice relaxation, has a larger thickness selection window, is easy to control in process, and the increase of the number of atomic layers of the interlayer is beneficial to improving the uniformity and consistency of the electrical characteristics of the gallium nitride high electron mobility transistor material.The InAlGaN interlayer is grown by a gradual temperature rising process, so that the surface quality of the interlayer can be effectively improved and the influence of temperature rising on the material performance can be avoided.