Multiple-reaction cavity metallorganic chemical vapor deposition equipment

Abstract

The invention relates to multiple-reaction cavity metallorganic chemical vapor deposition equipment comprising a gas transport system, reaction cavities, a tail gas treatment system, heaters and a wafer fetch and transport mechanism. The equipment is characterized by comprising two or more than two reaction cavities; the reaction cavities are mutually connected by the gas transport system; the equipment is provided with the tail gas treatment system; each reaction cavity is connected with the tail gas treatment device; a control valve is arranged in a pipeline; the reaction cavities are arranged in glove boxes; the wafer fetch and transport mechanism is arranged among the glove boxes; both ends of the wafer fetch and transport mechanism are respectively provided with a valve; and each cavity is provided with one heater. The invention has the advantages that the equipment is provided with a plurality of reaction cavities, can complete various process manufactures in one step and switches to another growth process after one growth process is ended, and thereby, the processing time and the energy sources are saved, the efficiency is improved, the cost is reduced and the product quality is improved.

Description

technical field [0001] The invention relates to a semiconductor manufacturing equipment, in particular to a multi-reaction chamber metal organic compound chemical vapor deposition equipment. Background technique [0002] Metal Organic Chemical Deposition (MOCVD) is an advanced vapor phase epitaxy technology, which integrates precision machinery, semiconductor materials, vacuum electronics, fluid mechanics, optics, chemistry, and computer disciplines. High-end semiconductor materials and optoelectronic special equipment with high degree of automation, high price and high technology integration. Its working principle is that the reaction gas is carried by the carrier gas to the reaction chamber through the gas transportation system. The heater provides temperature-reliable thermal boundary conditions for the chemical reaction in the reaction chamber. A thin film is deposited on the wafer. Both the composition and growth rate of the film are determined by the gas flow of vari...

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Problems solved by technology

The equipment of these two companies usually has only one reaction chamber, and multiple processes cannot be carried out at the same time. Because the composition and flow rate of the source are different when growing different layers of films, the required temperature is also different. In this way, when one process is completed, another In one process, it takes longer to wait for the temperature to rise or fall, resulting in higher cost

For example, when growing blue LED chip materials, the required temperature ranges from 200 degrees Celsius to 1300 degrees Celsius. Since the heating and cooling rates of current heaters are generally within tens of degrees, such a large temperature range makes the waiting time between different processes longer. long

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