Large-area pectinate spraying head used for metal organic chemical gas phase deposition device

Abstract

A large area comb-shaped sprinkler head for metal-organic chemical vapor deposition equipment is provided with two sets of comb-shaped sprinkler heads; the first set of comb-shaped sprinkler head consists of a gas A main pipe provided with a gas inlet and a plurality of gas A ventilation branch pipes which are lined in parallel; one end of each gas A ventilation branch pipe is communicated with the gas A main pipe and the other end is sealed; the second set of comb-shaped sprinkler head is provided with a gas B main pipe with the gas inlet and a plurality of gas B ventilation branch pipes which are lined in parallel; one end of each gas B ventilation branch pipe is communicated with the gas B main pipe and the other end is sealed; the gas A ventilation branch pipes and the gas B ventilation branch pipes are alternatively lined and connected into an integral structure; the gas A main pipe and the gas B main pipe are respectively arranged on the corresponding two sides of the integral structure; all gas A ventilation branch pipe and gas B ventilation branch pipes are opened with a plurality of sprinkler holes. The invention effectively feeds two source gases and separates them before they are sprayed into the reaction chamber, so as to evenly mix them before they reach above the substrate and react.

Description

Technical field: [0001] The invention relates to a gas delivery device, and further refers to a large-area spraying device used in a reaction chamber of a metal organic compound chemical vapor deposition (MOCVD) equipment. Background technique: [0002] Vapor phase deposition (VPE), liquid phase deposition (LPE), molecular beam deposition (MBE) and metal organic vapor deposition (MOCVD) are all commonly used epitaxial techniques. A large number of practices have proved that MOCVD is suitable for growing LEDs for semiconductor lighting. A good technology for material epitaxial wafers is also an economical and practical technology for industrialization. The basic principle of its growth is: on a substrate (GaAs, Si, sapphire or other materials) heated to an appropriate temperature, containing Group III and Group V The gaseous compounds of elements are transported to the surface of the substrate in a controlled manner, and a thin film deposition material with specific compositi...

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Problems solved by technology

[0003] MOCVD deposition growth depends on the vapor transport of MO source and the subsequent reaction of Group III and Group V compounds in the heating zone. If these two types of compounds are directly sent to the substrate in the reaction chamber, the source gas is difficult to mix uniformly, and the growth The composition and thickness uniformity of the deposited material cannot meet the requirements; in addition, the gas supply together is easy to cause pre-reaction, so that the source gas consumption cannot be measured, the generated composition and thickness are difficult to monitor, and at the same time, the source gas is greatly wasted

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