Method for acoustic-electric coupling isolation among multiple surface acoustic wave filters integrated on single substrate

A surface acoustic wave, monolithic integration technology, applied in the direction of electrical components, impedance networks, etc., can solve the problems of channel signal crosstalk, surface acoustic wave device consistency, compliance and reliability adverse effects, and achieve multi-filter channel count , easy to achieve synchronously, high isolation effect

Inactive Publication Date: 2013-09-18
丰泰通信技术扬州有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the acoustic-electric coupling between the surface acoustic wave filters in the current integrated surface acoustic wave filter bank, which leads to the signal crosstalk between the channels, and then affects the consistency, compliance and reliability of the surface acoustic wave device. Disadvantages of Obvious Adverse Effects

Method used

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  • Method for acoustic-electric coupling isolation among multiple surface acoustic wave filters integrated on single substrate
  • Method for acoustic-electric coupling isolation among multiple surface acoustic wave filters integrated on single substrate
  • Method for acoustic-electric coupling isolation among multiple surface acoustic wave filters integrated on single substrate

Examples

Experimental program
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Effect test

Embodiment 1

[0022] The longitudinal groove 41 covering the metal film is used to isolate the acoustic-electric coupling between the channels of the monolithic integrated surface acoustic wave filter bank.

[0023] Such as figure 2 As shown, a longitudinal groove 41 covered with a metal film is formed between each surface acoustic wave filter 2 as an acoustic and electrical isolation structure, and is connected to the ground electrode 22 of the surface acoustic wave filter.

[0024] The process implementation steps of the present embodiment are:

[0025] (1) Make longitudinal grooves at designated positions on the surface of the substrate by physical etching;

[0026] (2) Fabricate an aluminum-copper alloy film on the surface of the substrate by magnetron sputtering;

[0027] (3) Fabricate the graphic structure of the surface acoustic wave filter and the graphic structure of the metal film covering the groove by photolithography and etching technology.

[0028] In this embodiment, the ...

Embodiment 2

[0031] The metal film electrode 42 having a higher density than the graphic structure of the surface acoustic wave filter and being heterogeneous with the graphic structure of the surface acoustic wave filter is used to isolate the acoustic-electric coupling between the channels of the monolithic integrated surface acoustic wave filter bank.

[0032] Such as image 3 As shown, a high-density metal film electrode 42 which is heterogeneous to the graphic structure of the surface acoustic wave filter is arranged between each surface acoustic wave filter 2 as an acoustic and electrical isolation structure, and is connected to the ground electrode 22 of the surface acoustic wave filter.

[0033] The process implementation steps of the present embodiment are:

[0034] (1) Fabricate an aluminum-copper alloy film with a high copper doping ratio on the surface of the substrate by magnetron sputtering;

[0035] (2) Metal film isolation electrodes are fabricated by photolithography and ...

Embodiment 3

[0041] The metal film electrode 43 which is thicker than the graphic structure of the surface acoustic wave filter and homogeneous with the graphic structure of the surface acoustic wave filter is used to isolate the acoustic-electric coupling between the channels of the monolithic integrated surface acoustic wave filter group.

[0042] Such as Figure 4 As shown, a thickened metal film electrode 43 that is homogeneous to the graphic structure of the surface acoustic wave filter is arranged between each surface acoustic wave filter 2 as an acoustic and electrical isolation structure, and is connected to the ground electrode 22 of the surface acoustic wave filter.

[0043] (1) Fabricate a thickened aluminum-copper alloy film with a conventional copper doping ratio on the surface of the substrate by magnetron sputtering;

[0044] (2) Metal film isolation electrodes are fabricated by photolithography and etching processes;

[0045] (3) Fabricate an aluminum-copper alloy film wit...

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Abstract

The invention provides a method for acoustic-electric coupling isolation among multiple surface acoustic wave filters integrated on a single substrate. The multiple surface acoustic wave filters which are in parallel distribution are formed on the same piezoelectric single-crystal substrate. An input signal electrode and an output signal electrode of each surface acoustic wave filter are disposed independently and separated by a ground electrode of the corresponding surface acoustic wave filter. The ground electrodes of the surface acoustic wave filters are in parallel connection and grounded. Acoustic-electric isolation structures are formed among the surface acoustic wave filters on the surface of the piezoelectric single-crystal substrate. The acoustic-electric isolation structures are longitudinal grooves which are covered by metal films and connected with the ground electrodes of the surface acoustic wave filters. Or the acoustic-electric isolation structures are heavy metal film electrodes which are connected with the ground electrodes of the surface acoustic wave filters. By the method, the multiple surface acoustic wave filters integrated on the single substrate are high in acoustic-electric coupling isolation degree, simple in structure and convenient to manufacture.

Description

technical field [0001] The invention relates to an isolation method for acoustic-electric coupling between surface acoustic wave filters, in particular to an isolation method for monolithically integrating multiple acoustic-electric coupling between surface acoustic wave filters. Background technique [0002] When the crystal with piezoelectric effect is subjected to external stress, it will generate an electric field proportional to the stress. Conversely, when it is subjected to an external electric field, it will also produce elastic deformation proportional to the electric field to excite sound waves. When made by When the electric field is applied to the interdigital transducer on the surface of the piezoelectric substrate, the excited sound wave can only propagate in a specific direction on the surface layer of the substrate, which is the surface acoustic wave. [0003] The surface acoustic wave filter is a frequency selective device. Its working principle is to conver...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/64
Inventor 陈磊赵成石竹南胡经国
Owner 丰泰通信技术扬州有限公司
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