Revolution and rotation arrangement in reaction chamber of metallorganics chemical vapor deposition device

A chemical vapor deposition, metal organic technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as difficulty in ensuring the consistency of rotation speed

Inactive Publication Date: 2006-11-22
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

The epitaxial wafers in this reaction chamber are relatively uniform and save raw materials, but it is difficult to ensure the consistency of each rotation speed when the air cushion is rotated

Method used

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  • Revolution and rotation arrangement in reaction chamber of metallorganics chemical vapor deposition device
  • Revolution and rotation arrangement in reaction chamber of metallorganics chemical vapor deposition device
  • Revolution and rotation arrangement in reaction chamber of metallorganics chemical vapor deposition device

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Embodiment Construction

[0050] In order to better illustrate the meaning of the present invention, the words mentioned are further explained below.

[0051] The so-called "raw material" refers to the raw materials needed to grow thin film materials by using metal organic chemical vapor deposition and other equipment and growth methods, especially metal organic compounds and gas raw materials, but generally does not include carrying gases (such as hydrogen , nitrogen, etc.).

[0052] The term "substrate" or "substrate" refers to the base used for growing thin film materials, on which thin film materials are grown.

[0053] The so-called "reaction chamber" refers to the area where the growth film material is located. Because the growth of thin film materials by metal organic chemical vapor deposition is basically a chemical reaction process, the area where it is located is the reaction chamber.

[0054] The so-called "revolution" refers to the rotation of all the substrates around the same center. J...

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Abstract

The invention discloses a substrate base rotary structure in the metal organic chemical vapor deposition (MOCVD) equipment, which is characterized by the following: (1) the big graphite boat in the reacting chamber revolves one public fixing point; the small graphite boat rotates each center point; (2) the motor anchors substrate base (big graphite boat) to revolve; (3) the motor anchors the substrate base (small graphite boat) rotates; (4) the high-temperature region (substrate base) and low-temperature region (rotary dynamic structure) are separated by heat-durability material, which transmits the rotary dynamics.

Description

technical field [0001] The invention relates to a revolution and rotation mechanism in a reaction chamber of metal organic chemical vapor deposition equipment, which relates to the field of semiconductor equipment manufacturing, in particular to a substrate base rotation mechanism in metal organic chemical vapor deposition (MOCVD) equipment. Background technique [0002] "Metal-Organic Chemical Vapor Deposition" is the abbreviation of Metal-Organic Chemical VaporDeposition, and the Chinese translation is "Metal-Organic Chemical Vapor Deposition". The equipment also has another name called MOVPE, which is the abbreviation of Metal-Organic Vapor Phase Epitaxy, and the Chinese translation is "metal organic vapor phase epitaxy". The above two are the same real thing, which is hereby explained. [0003] Metal-organic chemical vapor deposition (MOCVD) was first proposed in the 1960s. After the development in the 1970s and 1980s, it has become the core growth technology for the pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/458C23C16/44
Inventor 刘祥林焦春美
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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