33results about How to "Ease bending" patented technology

This electronic device package includes a substrate upon which an electronic device is mounted, a plurality of device electrodes which are formed upon an electronic device, a plurality of substrate electrodes which are formed upon the substrate, and a plurality of connection lines, formed by a liquid drop ejection method, each of which electrically connects together one of the plurality of device electrodes and one of the plurality of substrate electrodes. The plurality of substrate electrodes are arranged in a staggered configuration.

The invention relates to an InGaN/AlGaN-GaN based multiple-quantum well structure and a preparation method thereof. In the preparation method, InGaN for fixing the In component is taken as a well layer, different AlGaN-GaN are used as barrier layers including an AlGaN barrier layer for fixing the Al component, an AlGaN barrier layer with the Al component continuously reduced along a growth direction, and a GaN barrier layer. The InGaN/AlGaN-GaN based multiple-quantum well structure is capable of effectively relieving stress at the barrier and well interface, reducing bending of energy bands, controlling electron and hole radiative recombination regions and improving electron and hole injection efficiency and radiative recombination efficiency, thereby facilitating achievement of GaN based LED structures with good crystal quality, high internal quantum efficiency and high luminous efficiency.

The invention relates to a high-safety fuel rod. The high-safety fuel rod comprises a rod body which comprises a rod-like metal substrate, fuel particles dispersed in the metal substrate and a fuel-free layer, wherein the periphery of the metal substrate is coated with the fuel-free layer, and the hardness of the fuel-free layer is higher than that of the metal substrate. The preparation method of the rod body comprises the following steps that A, the fuel particles are mixed with metal substrate powder, and a substrate green blank is prepared; B, the periphery of the substrate green blank is coated with a certain thickness of hard powder which forms a rod body green blank with the substrate green blank; C, the rod body green blank is sintered, and the rod body is formed. According to the high-safety fuel rod, a fuel-free area with high hardness is arranged on the periphery, the strength of the fuel rod is improved, machining is convenient, the size is convenient to control, the corrosion reaction is alleviated, release of hydrogen is reduced, and the safety is improved.

Disclosed is a package board wherein a malfunction or error occurs even when a high-frequency IC chip, in particular an IC chip of more than 3 GHz is mounted. A conductor layer (34P) having a thickness of 30 mum is formed on a core substrate (30), and a conductor circuit (58) having a thickness of 15 mum is formed on a interlayer resin insulating layer (50). By forming the conductor layer (34P) thick, the volume of the conductor itself is increased, thereby reducing the resistance. In addition, the power supply capacity to the IC chip can be improved by using the conductor layer (34) as a power supply layer.

The invention provides a limitation-enhanced GaN-based deep ultraviolet laser, which comprises an N-type electrode, a substrate, an N-type lower limiting layer, an N-type AlxGa1-xN lower waveguide layer, an active region, a P-type AlxGa1-xN upper waveguide layer, a P-type electron blocking layer, a P-type upper limiting layer, a P-type GaN ohmic contact layer and a P-type electrode from bottom totop in sequence. The N-type AlxGa1-xN lower waveguide layer and the P-type AlxGa1-xN upper waveguide layer are both of an Al component gradual change type, and through Al component gradient design ofthe N-type AlxGa1-xN lower waveguide layer and the P-type AlxGa1-xN upper waveguide layer, a light field is guided to be close to the active region, so that the optical loss is reduced, the limitationof a quantum well to carriers is enhanced, the electron leakage is inhibited, and the threshold value and the output power are improved.

The invention discloses a cable insulation layer material long in service life and excellent in mechanical property. The cable insulation layer material is prepared from, by weight, 40-55 parts of polyethylene, 15-30 parts of ethylene vinyl acetate, 30-40 parts of modified polypropylene, 1-2.3 parts of polydimethylsiloxane with carboxyl as an end group, 1-2 parts of dibenzoyl peroxide, 0.5-1.2 parts of trimethyol propane triacrylate, 1-2 parts of triallyl cyanurate, 1.2-2.3 parts of zinc dimethacrylate, 1-1.5 parts of an anti-aging agent DFC-34, 0.2-0.7 part of poly(1,2-dihydro-2,2,4-trimethyl-quinoline), 1-1.8 parts of an antioxidant 168, 0.2-0.9 part of sorbitol, 0.5-1.8 parts of hydroxyl silicone oil, 0.4-0.9 part of magnesium stearate, 1-3 parts of zinc stearate, 2-7 parts of a polyamide hot-melt adhesive and 40-60 parts of a composite filler. The cable insulation layer material is good in thermal stability, good in mechanical property and long in service life.

The invention provides a multi-quantum well structure. The multi-quantum well structure is a structure formed by stacking nine layers up and down, wherein the nine layers comprises in order from bottom to top: a GaN barrier layer, an AlGaN barrier layer, a GaN barrier layer, an InGaN potential well layer, a low-temperature InGaN potential well layer, an InGaN potential well layer, a GaN barrier layer, an AlGaN barrier layer and a GaN barrier layer. The invention also provides an LED epitaxial wafer. The invention also provides a preparation method of the LED epitaxial wafer. The method can effectively reduce the stress between well and barrier interfaces and can relieve the bending of energy bands, the AlGaN barrier layer can effectively strengthen the blocking of electrons, and the low-temperature InGaN potential well layer can improve the efficiency of injecting holes and electrons into the active area and the radiation recombination efficiency, thereby fundamentally improving the crystal quality and the internal quantum efficiency, further improving the performance of devices and improving the light extraction efficiency of the active area by about 37%.

The invention discloses an InGaN/AlInN quantum well laser, comprising a substrate, a buffer layer, a lower covering layer, a lower V-shaped waveguide layer, an active region, an electronic blocking layer, an upper V-shaped waveguide layer, an upper covering layer, an ohmic contact layer and electrodes; both the upper V-shaped waveguide layer and the lower V-shaped waveguide layer are of AlGaN material, and the active region is an InGaN/AlInN quantum well layer. The InGaN/AlInN quantum well laser uses the AlGaN material as the waveguide layer and the active region, the AlInN material as a barrier layer and InGaN as a well layer, lattice mismatch of the materials is decreased, weak polarization occurs to the active region, polarization field and cavity face loss is low, threshold current islow, and the InGaN/AlInN quantum well laser has excellent optical properties.

The invention discloses a sheath material for an urban power cable. The sheath material is prepared from raw materials in parts by weight as follows: 50-70 parts of polyvinyl chloride, 40-50 parts of polystyrene, 30-40 parts of chloroprene rubber, 2.8-3.6 parts of a crosslinking agent, 1-2 parts of dimethyldimethoxysilane, 70-90 parts of a filling agent, 0.8-1.6 parts of diisobutyl phthalate, 1.5-2.5 parts of disproportionated rosin, 2-4 parts of microcrystalline wax, 1.5-2.5 parts of calcium stearate, 0.4-0.8 parts of barium stearate and 2-4 parts of an antioxidant agent. The sheath material has excellent mechanical performance and good heat stability, still has good hydrophobicity even in the high-temperature environment, is high in hardness and safety performance and long in quality guarantee period, can effectively relieve bending, impact and other external force functions and also can effectively maintain inside structures.

The invention discloses a cable sheath material for a hot blast stove. The cable sheath material for the hot blast stove comprises the following raw materials in parts by weight: 75 to 85 parts of base material, 0.5 to 1.2 parts of dicumyl peroxide, 0.1 to 0.6 part of triethylene diamine, 1 to 2 parts of ethoxylated trimethyol propane triacytate, 60 to 70 parts of a filling reinforcing agent, 0.8 to 1.6 parts of end vinyl polydimethyl siloxane, 0.4 to 1 part of dibutyltin dilaurate, 0.2 to 1 part of N-cyclohexyl-N'-phenyl diphenylenediamine, 0.2 to 1 part of 2,6-di-tert-butylphenol, 0.5 to 1.5 parts of 2,6-ditert-butyl-4-methylphenol, 1 to 3 parts of sorbitol, 1 to 2 parts of hydroxyl silicone oil, 1 to 2 parts of magnesium stearate, 1 to 2 parts of zinc stearate and 1 to 2 parts of polyurethane hot melt adhesive. The cable sheath material for the hot blast stove has high compactness, excellent ageing resistance and high heat stability under a long-term high-temperature condition.

The invention provides a bar slowly-cooled material lifting appliance with a self-closing release function and an application method, and belongs to the technical field of lifting appliances. The lifting appliance comprises a cross beam component, a pocket claw component, a lifting rod component, a drag hook, a lifting rotating component and the like, and can automatically clamp and release a bar material and a slow cooling material. Through the lifting of the cross beam component and the draw hook, the draw hook hooks a pocket claw, so that the pocket claw can be opened; and the draw hook is separated from the pocket claw, so that the pocket claw can be closed. The pocket claw comprises a pair of grabhooks which are connected in a crossed and pivoted mode; when the bars are moved, the clamping force of the lifting appliance is larger along with lifting of the lifting appliance, and the bars cannot fall off. The lifting appliance is simple in structure and safe and reliable in the using process, and manual hooking and unhooking are not needed; and meanwhile, a large bending phenomenon generated by high-temperature slow cooling steel is reduced.

The invention is about a vehicle air conditioning system wherein an air stream can flow axially along a stream direction. The system has a filter held in a compartment in a substantially transversal plane. The filter compartment has an inlet opening and an outlet opening and is delimited by peripheral walls comprising a back wall, two lateral walls and a front wall. The filter compartment is provided with a removable service drawer comprising a front panel, and an adjacent floor portion extending backwards from the front panel. When the service drawer is closed the front panel is adjacent the front wall and, when opening the service drawer, a service opening opens in place of the front panel and in place of the floor portion leaving for the filter a passage allowing removal of the filter along a removal direction inclined relative to the transversal plane.