Quantum well combined LED epitaxial structure with high luminous efficiency and its preparation method

Abstract

A quantum well combination LED epitaxial structure with high luminous efficiency and a preparation method thereof, the epitaxial structure is a substrate, a buffer layer, a non-doped GaN layer, an n-type AlGaN layer, an n-type GaN layer, an active Layer, P-type AlGaN layer, P-type GaN layer and P-type InGaN contact layer, the active layer includes the lower multi-quantum well structure, constant temperature multi-quantum well structure and upper multi-quantum well structure, the lower multi-quantum well structure is InGaN potential well layer The constant temperature multi-quantum well structure is composed of the periodic superposition of the constant temperature InGaN potential well layer and the constant temperature GaN potential well layer, and the upper multi-quantum well structure is the periodic superposition of the InGaN potential well layer and the GaN barrier layer Composition; the preparation method is to prepare each layer sequentially from bottom to top in the reaction chamber of metal organic chemical vapor deposition equipment. The invention can effectively reduce the stress between the well-barrier interface, ease the bending of the energy band, and improve the injection efficiency of holes and electrons into the active region and the radiation recombination efficiency.

Description

technical field [0001] The invention relates to an epitaxial structure of an active region LED (light emitting diode) capable of improving light extraction efficiency and a preparation method thereof, belonging to the technical field of LED epitaxy. Background technique [0002] In the early 1990s, the third-generation wide-bandgap semiconductor materials represented by nitrides made a historic breakthrough. Researchers successfully prepared blue-green and ultraviolet LEDs on gallium nitride materials, making LED lighting become possible. In 1971, the first gallium nitride LED die came out. In 1994, gallium nitride HEMTs appeared blue light GaN-based diodes with high electron mobility, and gallium nitride semiconductor materials developed very rapidly. [0003] Semiconductor light-emitting diodes have the advantages of small size, ruggedness, strong controllability of light-emitting bands, high luminous efficiency, low heat loss, low light decay, energy saving, and environm...

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Problems solved by technology

[0019] The present invention aims at the problems of low quantum efficiency and high stress in existing multi-quantum wells, and provides a quantum well combined LED epitaxial structure with high luminous efficiency. Curved to improve hole and electron injection active region efficiency and radiative recombination efficiency

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