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A light-emitting diode epitaxial wafer

A technology of light-emitting diodes and epitaxial wafers, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low quantum efficiency in epitaxial wafers, increase internal quantum efficiency, improve electron overflow, and reduce effective potential height Effect

Active Publication Date: 2018-07-06
HC SEMITEK SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problem of low internal quantum efficiency of existing epitaxial wafers, an embodiment of the present invention provides a light-emitting diode epitaxial wafer

Method used

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  • A light-emitting diode epitaxial wafer
  • A light-emitting diode epitaxial wafer
  • A light-emitting diode epitaxial wafer

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Embodiment

[0031] Embodiments of the present invention provide a light-emitting diode epitaxial wafer, see figure 1 , the epitaxial wafer includes: a substrate 10 , a buffer layer 20 , an undoped GaN layer 30 , an N-type layer 40 , a multiple quantum well layer 50 , and a P-type layer 60 sequentially covering the substrate 10 .

[0032] see figure 2 , the multi-quantum well layer 50 is a multi-period structure, and each period structure includes: a quantum well layer 51 and a quantum barrier layer 52 covering the quantum well layer 51, and the quantum barrier layer 52 closest to the P-type layer 60 is a supercrystalline lattice structure.

[0033] see image 3 , the superlattice structure includes: a plurality of Al alternately grown x Ga 1-x N sublayer 521 and GaN sublayer 522, 0x Ga 1-x The composition of Al in the N sublayer 511 is graded with the growth order.

[0034] In this embodiment, the substrate 10 may be a sapphire substrate, or a Si substrate or a SiC substrate. The ...

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Abstract

The invention discloses a light-emitting diode epitaxial wafer and belongs to the technical field of semiconductors. The epitaxial wafer comprises a substrate, and a buffer layer, a non-impurity-doped GaN layer, an N-type layer, a multi-quantum well layer and a P-type layer which successively cover the substrate. The multi-quantum well layer is of a multi-period structure, and each period structure comprises a quantum well layer and a quantum barrier layer covering the quantum well layer. The quantum barrier layer closest to the P-type layer is of a superlattice structure. The superlattice structure comprises a plurality of AlxGal-xN sub-layers and GaN sub-layers which grow in an alternating manner, wherein x is larger than zero and less than 1, and the components of Al in the AlxGal-xN sub-layers gradually changes with the growth sequence. According to the invention, the quantum barrier layer, closest to the P-type layer, in the multi-quantum well layer of the epitaxial wafer is set as the superlattice structure, electronic overflow is effectively prevented on one hand, and on the other hand, the cavity injection rate is increased, so that the internal quantum efficiency of the epitaxial wafer is further increased, and the light-emitting efficiency of the light-emitting diode is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting diode epitaxial wafer. Background technique [0002] Light Emitting Diodes ("LED" for short) is a semiconductor electronic component that can convert electrical energy into light energy. [0003] In the conventional light-emitting diode epitaxial wafer preparation method, metal-organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition, referred to as "MOCVD") method, on the substrate material (for example: sapphire, silicon, silicon carbide, etc.) A buffer layer, an undoped GaN layer, an N-type layer, a multiple quantum well layer, a P-type layer, and the like are sequentially grown. [0004] In the existing light-emitting diode epitaxial wafer, on the one hand, there is an overflow of electrons in the multi-quantum well layer, and the overflowed electrons enter the P-type layer and undergo non-radiative recombination with holes in the P-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/00
CPCH01L33/0066H01L33/0075H01L33/06H01L33/325
Inventor 李昱桦乔楠陈柏松胡加辉魏世祯
Owner HC SEMITEK SUZHOU
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