262results about How to "Raise the barrier" patented technology

A method for single sign-on (SSO) that provides decentralized credential management using end-to-end security. Credential (and other personal user information) management is decentralized in that encryption is performed locally on the user's computer. The user's encrypted credentials may be stored by the login server and/or a plurality of distributed servers/databases (such as a cloud). The login server never has access to the user's credentials or other personal information. When the user wants to use single sign-on, he enters his password into his browser and the browser submits the encrypted/hashed password to the login server for validation. Upon validation, the browser receives the user's encrypted credentials. The credentials are decrypted by the browser and provided to relevant websites to automatically log the user in.

A golf club (40) having a club head (42) with a face component (60), an aft body (61) and a gasket (300) is disclosed herein. The face component (60) has a striking plate portion (72) and a return portion (74). The aft-body (61) is preferably composed of a crown portion (62), a sole portion (64) and optionally a ribbon section (90). The gasket (300) provides an interface between the face (60) and the aft-body (61) that reduces corrosion and improves manufacturing costs of the club head. The club head (42) preferably has a volume in the range of 290 cubic centimeters to 600 cubic centimeters, a weight in the range of 165 grams to 300 grams, and a striking plate portion (72) surface area in the range of 4.00 square inches to 7.50 square inches.

Some embodiments relate to a luer connector comprising a housing having a hollow bore therethrough, a first end, and a second end, a male luer tip supported by the housing configured to rotate with respect to the housing, the luer tip having a first open end and a passageway through the luer tip in fluid communication with the first open end, and a substantially rigid internal member extending into the passageway of the luer tip toward the first open end of the luer tip. In some embodiments, at least one of the luer tip and the internal member can be axially moveable between a first closed position and a second open position relative to the other of the luer tip and the internal member. Further, the luer tip and the internal member can cooperate such that rotation of the luer tip in a first direction relative to the housing increases an axial displacement between the first open end of the luer tip and an end portion of the internal member.

The invention relates to a method for rolling a difficult-to-machine metal material by combining electro-plasticity with temperature plasticity. The method comprises the following steps of: preheating a roller to the recovery temperature of a machined metal material and lower than the recrystallization temperature of the metal material; and inputting high-energy pulse current into a machining section of the moving metal material, performing electro-plastic treatment under the actions of the thermal effect and non-thermal effect of the metal material, and feeding the machining section into the preheated roller for rolling by combining electro-plasticity with temperature plasticity. In the rolling process, electro-plasticity and temperature plasticity are combined and unbalanced kinetic energy produced by the material due to the rise of atomic potential energy and strong electric stimulation of pulse current under heating condition is fully utilized, so that movement of crystal defects such as diffusion, dislocation and the like of atoms is facilitated, the internal microstructure of the metal material is improved, a tissue which is beneficial to enhancing of intensity and toughness (plasticity) is formed, and the plasticity of the material at low temperature is enhanced. The method is suitable for rolling difficult-to-machine metal materials such as magnesium alloys, nickel-titanium alloys, tungsten alloys and the like.

An organic opto-electric device is disclosed comprising an opto-electric element and a protective enclosure for protecting the opto-electric element against atmospheric substances. The protective enclosure comprises a multi-layered protective layer in which a first inorganic layer, a first organic layer comprising a getter, a second organic layer free from getter material and a second inorganic layer are stacked in the order named, wherein the first and the second inorganic layer encapsulate the first and the second organic layer. The getter is distributed in the first organic layer a nanometer sized particles and the second organic layer has a thickness of at least 10 μm.

The invention relates to a dual-layer perovskite light emitting diode and a preparation method therefor. The dual-layer perovskite light emitting diode comprises the following components from the bottom up separately: ITO conductive glass is used as a positive electrode; a layer of poly 3, 4-ethylenedioxythiophene-polystyrolsulfon acid (PEDOT-PSS) with a thickness of about 20nm is used as a hole transport layer; a dual-layer perovskite light emitting layer is prepared by a spin-coating method in two times; the adopted dual-layer perovskite light emitting layer can be perovskite with different halogen ratios; a layer of calcium-doped zinc oxide (Ca:ZnO) with the thickness of about 50nm is spin-coated on the perovskite layer to be used as an electron transport layer; and finally metal calcium and aluminum are evaporated to be used as a negative electrode. According to the dual-layer perovskite light emitting diode and the preparation method therefor, on one hand, by regulating and controlling the Ca concentration in the Ca:ZnO, an optimal band gap is obtained, so that the barrier between the electron transport layer and the perovskite is reduced, and the cut-in voltage of the light emitting diode is lowered consequently, and the light emitting efficiency and internal quantum efficiency of the light emitting diode are improved at the same time; and on the other hand, by regulating the halogen ratios in the perovskite, light emission with different colors can be realized.

A container for a tobacco product having a base and a lid, the lid comprises an outer skirt and a first abutment projection. The abutment projection runs circumferentially on an inside surface of the lid, adjacent to the outer skirt. The base comprises a side wall configured to contact an outward-facing surface of the first abutment projection during closure of the lid, such that the side wall is outwardly deflected and contacts an inside surface of the outer skirt of the lid, sealing the container when the lid is closed.

The invention relates to a moisturizing composition, and a preparation method and application thereof, which belong to the field of cosmetics. The moisturizing composition is prepared from the following components in parts by weight: 1.0 to 5.0 parts of sodium hyaluronate, 2.0 to 10.0 parts of carboxymethyl deacetyl chitosan, 30.0 to 60.0 parts of dendrobium officinale extract, and 25.0 to 67.0 parts of deionized water. The moisturizing composition can well form a netted natural biomimetic membrane with skin, the sodium hyaluronate performs the water supplementation and moisturizing in the biomimetic membrane, the carboxymethyl deacetyl chitosan forms a biomimetic sterile membrane, so that natural moisturizing factors such as the sodium hyaluronate can be effectively locked, the water loss rate is decreased; and the dendrobium officinale polysaccharide is combined with the natural biomimetic sterile membrane, so that the moisturizing lasting property after long-term use can be further improved, the restoration effect is improved, and the dryness and allergy problems of the skin can be fundamentally solved. The moisturizing composition has multidimensional efficacy such as moisturizing function, restoration function and skin barrier increasing function.

The invention discloses powder metallurgy high-speed steel and a preparation method thereof. The method is simpler than the existing powder metallurgy high-speed steel preparation method, steps of high-speed steel mother alloy smelting, atomization for making powder and hot isostatic pressing are omitted, great equipment investment is not needed and the production cost of powder metallurgy high-speed steel is reduced. The impurity content of the powder metallurgy high-speed steel prepared by adopting the method provided by the invention is low and the using performance is excellent. The powder metallurgy high-speed steel provided by the invention is prepared through the steps of 1) preparing powder mixture: weighing raw materials according to set components and proportioning ratio, and mixing and ball-milling the raw materials in a roller-type ball mill to obtain the powder mixture; 2) molding: molding the powder mixture into pressed blanks through cold isostatic pressing; 3) sintering: sintering the pressed blanks in a vacuum or inert gas atmosphere by adopting a hot-pressing sintering technology, heating the pressed blanks to 1100-1250 DEG C during sintering, preserving heat for 30-90 minutes and keeping sintering pressure to be 10-40Mpa; 4) hot forging; 5) heat treatment.

The invention discloses a moisturizing repair composition containing ceramide and phytosterol and a preparation method thereof and belongs to the field of cosmetics. The moisturizing repair composition is prepared from the following components in percent by mass: 0.01-5% of ceramide, 0.1-0.5% of phytosterol, 0.1-10% of shea butter, 0.5-10% of hydroxyethylurea, 0.1-6% of ammonium lactate, 1-30% ofa polyhydric alcohol moisturizing agent, 1-5% of an emulsifier, 1-20% of skin moistening grease, a proper amount of a thickener, essence and a preservative and the balance water, totaling 100%. The composition is an emulsified body which contains ceramide as the primary natural moisturizing factor of human skin and phytosterol and shea butter originated from plants, so that the composition has good moisturizing and repairing action, can keep the skin moisten and flexible and smooth, and can resist damage of outside severe climate environment to the skin.

The invention provides an anti-allergic skin-care facial mask. The anti-allergic skin-care facial mask is prepared from the following main components in percentage by weight: 0.5 to 3 percent of a tasmannia lanceolate leaf exact, 0.1 to 0.2 percent of hudroxyphenyl propamidobenzoic acid, 0.1 to 2.0 percent of lactobacillus/soybean milk fermentation product filtrate and 0.1 to 1.0 percent of ectoin. The anti-allergic skin-care facial mask disclosed by the invention has the advantages that deep soothing can be achieved, damage of an external environment to the skin is effectively resisted, skinimmunity is improved, the skin barrier is strengthened and sensitive skin is repaired. The anti-allergic skin-care facial mask also can be added with an abelmoschus esclentus fruit extract, oat beta-glucan, aphanothece sacrum polysaccharide, bio-saccharide gum-4 and ceramide 3, and the effects of a product can be better played by scientific matching and recombination as well as synergism of the moisturizing and anti-allergic active ingredients therein.

An idler roller is disclosed which includes a non-rotating shaft, a roller shell positioned around the non-rotating shaft and a bearing assembly proximate each end of the roller shell. The bearing assembly includes an outer labyrinth member and an inner labyrinth member having an integrally formed shaft seal, wherein the inner and outer labyrinth members define a labyrinth seal and the integrally formed shaft seal sealingly engages an outer surface of the non-rotating shaft.

An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type conductivity can be provided using a molybdenum oxide material containing molybdenum oxide (MoO_y (2<y<3)) having an intermediate composition between molybdenum dioxide and molybdenum trioxide. For example, a semiconductor device is formed using a molybdenum oxide material containing molybdenum trioxide (MoO₃) as its main component and MoO_y (2<y<3) at 4% or more.

The invention discloses a preparation method of a germanium-base schottky transistor, which belongs to the technical field of a manufacturing process of ultra large scale integrated circuits (ULSI). The method comprises the following steps: manufacturing an MOS transistor structure on a germanium-base substrate; depositing a metal thin film; carrying out heat treatment for the first time for quick heat annealing so as to ensure that the metal thin film layer and the germanium layer below the metal thin film layer react to form metal germanide; removing the unreacted metal thin film layer; doping impurities in the germanide layer generated by the reaction; carrying out heat treatment for the second time for annealing so as to ensure that the doped impurities are activated to drive in; and finally forming contact holes and metal connection wires. The method carries out the impurity doping and the activated drive-in annealing after forming the germanide through the first annealing and can effectively regulate and control a barrier height of the contact of a metal semiconductor and also improve the surface appearance of the germanide.

The present invention relates to barrier films or sheets comprising cellulose nanofibrils and to laminated packaging materials comprising such films, in particular intended for liquid food packaging.

The invention also relates to a packaging container comprising the laminated packaging material or being made from the laminated packaging material, in particular to a packaging container intended for liquid food packaging.

The present invention discloses a nitride-based luminous diode epitaxial wafer and a manufacturing method thereof, belonging to the field of the semiconductor technology. The epitaxial wafer comprises a substrate, a buffer layer stacked on the substrate in order, an un-doped GaN layer, a N-type GaN layer, a stress releasing layer, a multiple quantum well layer, a P-type electric barrier layer and a P-type GaN layer. The multiple quantum well layer includes a quantum well layer and a quantum barrier layer which are alternatively stacked, the quantum well layer is an InGaN layer, the quantum barrier layer is the GaN layer inserting the InGaN layer, and the In constituent content of the InGaN layer in the quantum well layer is lower than the In constituent content of the InGaN in the quantum well layer. The GaN quantum well layer inserts the InGaN layer having the In constituent content lower than the InGaN quantum well layer so as to improve the injection efficiency of the carrier, improve the effective recombination of the electrons and the hole in the quantum well and improve the quantum efficiency.

An air treatment apparatus and method are disclosed in the present invention, wherein, at least one air treatment unit is included. The unit comprises air inlet, air outlet, air treatment devices and connecting components. The air treatment device is located between the air inlet and the air outlet. The air treatment device comprises at least one of the following components: component for air purification and filtering, blow-through fan, draw-through fan, pump, component for heating, component for dehumidifying, component for humidifying, component for air-cooling. The air treatment unit can be used alone for improving the air quality of the environment. When more than one unit are connected together with the connecting components, the units are teamed up and work together, and an air treatment system is formed.