Preparation method of germanium-base schottky transistor

A technology of transistors and MOS transistors, which is applied in the field of Ge-based Schottky preparation, can solve problems such as difficulty in realizing shallow junctions, large off-state leakage current, and small on-state drive current, so as to improve morphology, reduce voids, The effect of improving performance
CN101635262AActive Publication Date: 2010-01-27SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
Publication Date
2010-01-27

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Abstract

The invention discloses a preparation method of a germanium-base schottky transistor, which belongs to the technical field of a manufacturing process of ultra large scale integrated circuits (ULSI). The method comprises the following steps: manufacturing an MOS transistor structure on a germanium-base substrate; depositing a metal thin film; carrying out heat treatment for the first time for quick heat annealing so as to ensure that the metal thin film layer and the germanium layer below the metal thin film layer react to form metal germanide; removing the unreacted metal thin film layer; doping impurities in the germanide layer generated by the reaction; carrying out heat treatment for the second time for annealing so as to ensure that the doped impurities are activated to drive in; and finally forming contact holes and metal connection wires. The method carries out the impurity doping and the activated drive-in annealing after forming the germanide through the first annealing and can effectively regulate and control a barrier height of the contact of a metal semiconductor and also improve the surface appearance of the germanide.
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Description

technical field

[0001] The invention belongs to the technical field of ultra-large-scale integrated circuit (ULSI) manufacturing technology, and in particular relates to a method for preparing a Ge-based Schottky. Background technique

[0002] As the device size shrinks, mobility degradation becomes a difficult problem. Compared with silicon materials, germanium materials have higher and more symmetrical low-field carrier mobility, narrow energy band width, and are compatible with silicon processes, so germanium-based devices are a promising development direction for high-speed MOSFET devices.

[0003] The germanium-based Schottky transistor is a new structure with great potential for development. The main difference between it and the traditional transistor is that it replaces the traditional highly doped source and drain with a metal germanide source and drain. The contact between the source and drain and the channel is made of The PN junction becomes the Schottky junctio...

Claims

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