The invention discloses a MOSFET (metal-oxide-semiconductor field effect transistor) which effectively lowers source-drain contact resistance in post grid process and a manufacturing method thereof. The MOSFET comprises a substrate, a grid stacking structure, formed by a grid medium layer and a grid metal layer, on the substrate, source-drain areas in substrate parts on two sides of the grid stacking structure, grid side walls on substrate parts on two sides of the grid stacking structure, interlevel dielectric on the substrate, a source-drain contact plug in the interlevel dielectric on the source-drain areas and metal silicide between the source-drain areas and the source-drain contact plug and is characterized in that the interface of the metal silicide and the source-drain areas is provided with an ion-doped dephlegmation area, and the grid medium layer is located below and on the side of the grid metal layer. By the MOSFET which effectively lowers source-drain contact resistance and the manufacturing method thereof and the ion-doped dephlegmation area disposed on the interface between the metal silicide and the source-drain areas, Schottky barrier height can be reduced effectively, and accordingly source-drain resistance is reduced greatly, and device performance is further improved.